100mm 4inch GaN ho Sapphire Epi-layer wafer Gallium nitride epitaxial wafer
Mokhoa oa ho hola oa GaN blue LED quantum well structure. Phallo e qaqileng ea ts'ebetso e tjena
(1) Ho baka mocheso o phahameng, sapphire substrate e qala ho futhumatsoa ho 1050 ℃ sebakeng sa hydrogen, sepheo ke ho hloekisa bokaholimo ba substrate;
(2) Ha mocheso oa substrate o theohela ho 510 ℃, mocheso o tlaase oa GaN/AlN o nang le botenya ba 30nm o behoa holim'a sapphire substrate;
(3) Mocheso o nyolohela ho 10 ℃, khase e arabelang ammonia, trimethylgallium le silane li kenngoa, ka ho latellana ho laola sekhahla sa phallo e tsamaisanang, le mofuta oa silicon-doped N-mofuta oa GaN oa 4um botenya;
(4) Khase e arabelang ea trimethyl aluminium le trimethyl gallium e ne e sebelisetsoa ho lokisa lik'honthinente tsa mofuta oa silicon-doped N-mofuta oa 0.15um;
(5) 50nm Zn-doped InGaN e lokiselitsoe ka ho kenya trimethylgallium, trimethylindium, diethylzinc le ammonia mocheso oa 8O0 ℃ le ho laola litekanyetso tse fapaneng tsa phallo ka ho latellana;
(6) Mocheso o ile oa eketseha ho 1020 ℃, trimethylaluminum, trimethylgallium le bis (cyclopentadienyl) magnesium e ne e kenngoa ho lokisetsa 0.15um Mg doped P-type AlGaN le 0.5um Mg doped P-type G glucose ea mali;
(7) Filimi ea boleng bo holimo ea mofuta oa P ea GaN Sibuyan e fumanoe ka ho tšeloa moeeng oa naetrojene ho 700℃;
(8) Ho roala holim'a sebaka sa P-mofuta oa G ho senola sebaka sa N-mofuta oa G stasis;
(9) Ho fetoha mouoane ha lipoleiti tsa ho kopana tsa Ni/A holim'a p-GaNI, ho fetoha mouoane ha △/Al lipoleiti tsa ho kopana le holim'a ll-GaN ho etsa li-electrode.
Litlhaloso
Ntho | GaN-TCU-C100 | GaN-TCN-C100 |
Litekanyo | e 100 limilimithara ± 0.1 limilimithara | |
Botenya | 4.5±0.5 um E ka etsoa ka mokhoa o ikhethileng | |
Boitloaelo | C-sefofane(0001) ±0.5° | |
Mofuta oa Tsamaiso | Mofuta oa N (o sa butsoa) | Mofuta oa N (Si-doped) |
Resistivity(300K) | <0.5 Q・cm | <0.05 Q・cm |
Mahlohonolo a Mojari | <5x1017cm-3 | > 1x1018cm-3 |
Motsamao | ~ 300 cm2/Vs | ~ 200 cm2/Vs |
Dislocation Density | Ka tlase ho 5x108cm-2(e baloa ke FWHMs ea XRD) | |
Sebopeho sa substrate | GaN on Sapphire(E Tloaelehileng: Khetho ea SSP: DSP) | |
Sebaka se Sebeletsang sa Surface | 90% | |
Sephutheloana | E phuthetsoe ka har'a tikoloho ea phaposi e hloekileng ea sehlopha sa 100, ka har'a lik'hasete tsa 25pcs kapa lijana tse se nang letho, tlas'a moea oa naetrojene. |