100mm 4inch GaN ho Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

100mm 4inch GaN on Sapphire Epi-layer wafer Gallium nitride epitaxial wafer Setšoantšo se bontšitsoeng

Tlhaloso e Khutšoanyane:

Gallium nitride epitaxial sheet ke moemeli ea tloaelehileng oa moloko oa boraro oa semiconductor semiconductor epitaxial, e nang le thepa e babatsehang e kang lekhalo le leholo, matla a tšimo a senyehang, conductivity e phahameng ea mocheso, lebelo le phahameng la elektronike saturation drift, matla a ho hanyetsa mahlaseli a kotsi le a phahameng. botsitso ba lik'hemik'hale.

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Lintlha tsa Sehlahisoa

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Mokhoa oa ho hola oa GaN blue LED quantum well structure. Phallo e qaqileng ea ts'ebetso e tjena

(1) Ho baka mocheso o phahameng, sapphire substrate e qala ho futhumatsoa ho 1050 ℃ sebakeng sa hydrogen, sepheo ke ho hloekisa bokaholimo ba substrate;

(2) Ha mocheso oa substrate o theohela ho 510 ℃, mocheso o tlaase oa GaN/AlN o nang le botenya ba 30nm o behoa holim'a sapphire substrate;

(3) Mocheso o nyolohela ho 10 ℃, khase e arabelang ammonia, trimethylgallium le silane li kenngoa, ka ho latellana ho laola sekhahla sa phallo e tsamaisanang, le mofuta oa silicon-doped N-mofuta oa GaN oa 4um botenya;

(4) Khase e arabelang ea trimethyl aluminium le trimethyl gallium e ne e sebelisetsoa ho lokisa lik'honthinente tsa mofuta oa silicon-doped N-mofuta oa 0.15um;

(5) 50nm Zn-doped InGaN e lokiselitsoe ka ho kenya trimethylgallium, trimethylindium, diethylzinc le ammonia mocheso oa 8O0 ℃ le ho laola litekanyetso tse fapaneng tsa phallo ka ho latellana;

(6) Mocheso o ile oa eketseha ho 1020 ℃, trimethylaluminum, trimethylgallium le bis (cyclopentadienyl) magnesium e ne e kenngoa ho lokisetsa 0.15um Mg doped P-type AlGaN le 0.5um Mg doped P-type G glucose ea mali;

(7) Filimi ea boleng bo holimo ea mofuta oa P ea GaN Sibuyan e fumanoe ka ho tšeloa moeeng oa naetrojene ho 700℃;

(8) Ho roala holim'a sebaka sa P-mofuta oa G ho senola sebaka sa N-mofuta oa G stasis;

(9) Ho fetoha mouoane ha lipoleiti tsa ho kopana tsa Ni/A holim'a p-GaNI, ho fetoha mouoane ha △/Al lipoleiti tsa ho kopana le holim'a ll-GaN ho etsa li-electrode.

Litlhaloso

Ntho	GaN-TCU-C100	GaN-TCN-C100
Litekanyo	e 100 limilimithara ± 0.1 limilimithara
Botenya	4.5±0.5 um E ka etsoa ka mokhoa o ikhethileng
Boitloaelo	C-sefofane(0001) ±0.5°
Mofuta oa Tsamaiso	Mofuta oa N (o sa butsoa)	Mofuta oa N (Si-doped)
Resistivity(300K)	<0.5 Q・cm	<0.05 Q・cm
Boiketlo ba Mojari	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3
Motsamao	~ 300 cm²/Vs	~ 200 cm²/Vs
Dislocation Density	Ka tlase ho 5x10⁸cm^-2(e baloa ke FWHMs ea XRD)
Sebopeho sa substrate	GaN on Sapphire(E Tloaelehileng: Khetho ea SSP: DSP)
Sebaka se Sebeletsang sa Surface	90%
Sephutheloana	E phuthetsoe ka har'a tikoloho ea phaposi e hloekileng ea sehlopha sa 100, ka har'a lik'hasete tsa 25pcs kapa lijana tse se nang letho, tlas'a moea oa naetrojene.