Wafer ea 4H-SiC ea lisenthimithara tse 12 bakeng sa likhalase tsa AR

Tlhaloso e Khutšoanyane:

TheSubstrate e tsamaisang motlakase ea 4H-SiC (silicon carbide) ea lisenthimithara tse 12ke wafer ea semiconductor e bophara bo boholo haholo e entsoeng bakeng sa moloko o latelangmotlakase o phahameng, matla a phahameng, maqhubu a phahameng, le mocheso o phahamengtlhahiso ea lisebelisoa tsa elektroniki tsa motlakase. Ho sebelisa melemo ea mantlha ea SiC—joalo katšimo ea motlakase e mahlonoko haholo, lebelo le phahameng la ho kheloha ha elektrone e tletseng, conductivity e phahameng ea mochesolebotsitso bo botle ba lik'hemik'hale—setsi sena se behiloe e le thepa ea motheo bakeng sa liforomo tse tsoetseng pele tsa lisebelisoa tsa motlakase le lits'ebetso tse hlahang tsa wafer tsa sebaka se seholo.

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Wafer ea lisenthimithara tse 12 ea 4H-SiC

Kakaretso

Ho sebetsana le litlhoko tsa indasteri ka bophara bakeng saphokotso ea litšenyehelo le ntlafatso ea tlhahiso, phetoho ho tloha ho tloaelehileng6–8 inch SiC to SiC ea lisenthimithara tse 12Li-substrate li tsebahala haholo e le tsela ea bohlokoa. Wafer ea lisenthimithara tse 12 e fana ka sebaka se seholo haholo se ka sebelisoang ho feta liforomo tse nyane, e nolofalletsang tlhahiso e phahameng ea die ka wafer, tšebeliso e ntlafetseng ea wafer, le tekanyo e fokotsehileng ea tahlehelo ea bohale—kahoo e tšehetsa ntlafatso ea litšenyehelo tsa tlhahiso ka kakaretso ho pholletsa le ketane ea phepelo.

Tsela ea Kholo ea Crystal le Tlhahiso ea Wafer

Substrate ena e tsamaisang motlakase ea lisenthimithara tse 12 ea 4H-SiC e hlahisoa ka ho koahela ketane e felletseng ea ts'ebetsokatoloso ea peo, kholo ea kristale e le 'ngoe, ho teteana, ho tšesa le ho bentša, ho latela mekhoa e tloaelehileng ea tlhahiso ea li-semiconductor:

Katoloso ea peo ka ho tsamaisoa ka mouoane oa 'mele (PVT):
E bolelele ba lisenthimithara tse 12Kristale ea peo ea 4H-SiCe fumanoa ka katoloso ea bophara ho sebelisoa mokhoa oa PVT, e leng se nolofalletsang kholo e latelang ea li-boule tsa 4H-SiC tse tsamaisang motlakase tsa lisenthimithara tse 12.
Kgolo ea kristale e le 'ngoe ea 4H-SiC e tsamaisang motlakase:
E tsamaisangn⁺ 4H-SiCKgolo ya kristale e le nngwe e fihlellwa ka ho kenya naetrojene tikolohong ya kgolo ho fana ka doping e laolwang ke bafani.
Tlhahiso ea wafer (ts'ebetso e tloaelehileng ea semiconductor):
Kamora ho bopa bolo, di-wafer di hlahiswa kaho seha ka laser, e lateloa keho fokotsa, ho bentsha (ho kenyeletsoa le ho qeta boemo ba CMP), le ho hlwekisa.
Botenya ba substrate bo hlahang ke560 μm.

Mokhoa ona o kopaneng o etselitsoe ho tšehetsa kholo e tsitsitseng ka bophara bo boholo haholo ha o ntse o boloka botšepehi ba kristale le thepa ea motlakase e tsitsitseng.

Ho netefatsa tlhahlobo e felletseng ea boleng, substrate e khetholloa ka ho sebelisa motsoako oa lisebelisoa tsa tlhahlobo ea sebopeho, ea mahlo, ea motlakase le ea liphoso:

Raman spectroscopy ('mapa oa sebaka):netefatso ea ho tšoana ha polytype ho pholletsa le wafer
Microscopy ea optical e iketsang ka botlalo ('mapa oa wafer):ho lemoha le ho hlahloba lipalo-palo tsa li-micropipe
Metrology ea ho hanyetsa ho se amehe ha lintho ('mapa oa wafer):kabo ea ho hanyetsa libakeng tse ngata tsa tekanyo
Phapang ea X-ray e nang le qeto e phahameng (HRXRD):tlhahlobo ea boleng ba kristale ka ho lekanya curve e sisinyehang
Tlhahlobo ea ho se sebetse hantle ha lesapo (kamora ho hlaba ka mokhoa o ikhethileng):tlhahlobo ea bongata ba ho falla ha sebaka le sebopeho sa sona (ho totobatsoa ho falla ha li-screw)

sic wafer 10

Liphetho tsa Bohlokoa tsa Tshebetso (Moemeli)

Liphetho tsa tlhaloso li bontša hore substrate ea 4H-SiC e tsamaisang motlakase ea lisenthimithara tse 12 e bontša boleng bo matla ba thepa ho pholletsa le liparamente tsa bohlokoa:

(1) Bohloeki le ho tšoana ha mefuta e mengata

Lipontšo tsa 'mapa oa sebaka sa RamanSekoahelo sa 100% 4H-SiC polytypeho pholletsa le substrate.
Ha ho na ho kenyelletsoa ha mefuta e meng ea polytype (mohlala, 6H kapa 15R) ho fumanoang, ho bontšang taolo e ntle ea mefuta ea polytype ka tekanyo ea lisenthimithara tse 12.

(2) Bongata ba diphaephe tse nyane (MPD)

'Mapa oa microscopy oa boholo ba wafer o bontšaBotenya ba liphaephe tse nyenyane < 0.01 cm⁻², e bonts'ang ho thibela ka katleho sehlopha sena sa diphoso tse fokotsang sesebediswa.

(3) Ho hanyetsa le ho tšoana ha motlakase

'Mapa oa ho hanyetsa ho sa amaneng le 'mele (tekanyo ea lintlha tse 361) o bontša:
- Mefuta ea ho hanyetsa:20.5–23.6 mΩ·cm
- Ho hanyetsa ka karolelano:22.8 mΩ·cm
- Ho se tšoane:< 2%
  Liphetho tsena li bontša ho tsitsa ho hotle ha ho kenyelletsoa ha dopant le ho tšoana ho hotle ha motlakase oa wafer-scale.

(4) Boleng ba kristale (HRXRD)

Litekanyo tsa HRXRD tsa ho thothomela hodima(004) ponahatso, e nkiloe holintlha tse hlanoka lehlakoreng le bophara ba wafer, bonts'a:
- Litlhōrō tse le 'ngoe, tse batlang li lekana ntle le boitšoaro ba tlhōrō e mengata, e leng se bontšang ho se be teng ha litšobotsi tsa moeli oa lithollo tse nang le khutlo e tlase.
- Karolelano ea FWHM:20.8 arcsec (″), e bontšang boleng bo phahameng ba kristale.

(5) Bongata ba ho se ntshe ha dikurufu (TSD)

Kamora ho tjheka ka tsela e kgethilweng le ho skena ka boiketsetso,ho sekama ha screwe lekanngoa ho2 cm⁻², e bonts'a TSD e tlase ka sekala sa lisenthimithara tse 12.

Qeto ho tsoa liphethong tse ka holimo:
Substrate e bontšaBohloeki bo botle ba 4H polytype, bongata ba micropipe bo tlase haholo, resistivity e tlase e tsitsitseng le e ts'oanang, boleng bo matla ba kristale, le bongata bo tlase ba ho se sebetse hantle ha screw, e tšehetsang ho tšoaneleha ha eona bakeng sa tlhahiso ea lisebelisoa tse tsoetseng pele.

Boleng ba Sehlahisoa le Melemo

E nolofalletsa ho falla ha tlhahiso ea SiC ea lisenthimithara tse 12
E fana ka sethala sa boleng bo holimo sa substrate se tsamaellanang le 'mapa oa indasteri o lebisang tlhahisong ea li-wafer tsa SiC tsa lisenthimithara tse 12.
Botenya bo tlase ba sekoli bakeng sa tlhahiso e ntlafetseng ea sesebelisoa le ts'epo
Bongata ba micropipe bo tlase haholo le botenya bo tlase ba ho sekama ha dislocation ho thusa ho fokotsa mekgwa ya tahlehelo ya kotulo e kotsi le ya parametric.
Ho tšoana hantle ha motlakase bakeng sa botsitso ba ts'ebetso
Kabo e tiileng ea ho hanyetsa e tšehetsa ntlafatso e ntlafalitsoeng ea wafer ho ea ho wafer le botsitso ba sesebelisoa ka hare ho wafer.
Boleng bo phahameng ba kristale bo tšehetsang epitaxy le ts'ebetso ea lisebelisoa
Liphetho tsa HRXRD le ho se be teng ha matšoao a moeli oa lithollo tse nang le angle e tlase li bontša boleng bo botle ba thepa bakeng sa kholo ea epitaxial le tlhahiso ea lisebelisoa.

Likopo tse reriloeng

Substrate e tsamaisang motlakase ea 4H-SiC ea lisenthimithara tse 12 e sebetsa ho:

Lisebelisoa tsa motlakase tsa SiC:MOSFET, diode tsa thibelo ya Schottky (SBD), le dibopeho tse amanang le tsona
Likoloi tsa motlakase:li-inverter tse kholo tsa ho hula, li-charger tse ka hare ho sekepe (OBC), le li-converter tsa DC-DC
Matla a ntjhafatswang le gridi:li-inverter tsa photovoltaic, litsamaiso tsa polokelo ea matla, le li-module tse bohlale tsa grid
Lisebelisoa tsa motlakase tsa indasteri:lisebelisoa tsa motlakase tse sebetsang hantle haholo, li-drive tsa enjene, le li-converter tsa motlakase o phahameng
Litlhoko tse hlahellang tsa wafer sebakeng se seholo:liphutheloana tse tsoetseng pele le maemo a mang a tlhahiso ea li-semiconductor tse lumellanang le lisenthimithara tse 12

Lipotso Tse Botsoang Khafetsa - Substrate ea 4H-SiC e tsamaisang motlakase ea lisenthimithara tse 12

P1. Sehlahisoa sena ke mofuta ofe oa substrate ea SiC?

A:
Sehlahisoa sena keSesebelisoa sa kristale se le seng sa 4H-SiC se tsamaisang motlakase sa lisenthimithara tse 12 (mofuta oa n⁺), e hodisitsweng ka mokgwa wa Physical Vapor Transport (PVT) mme e sebetswa ka ho sebedisa mekgwa e tloaelehileng ya ho ntsha di-wafer tsa semiconductor.

P2. Ke hobane'ng ha 4H-SiC e khethoa e le polytype?

A:
4H-SiC e fana ka motsoako o motle ka ho fetisisa oaho tsamaea ha dielektrone ka bongata, lekhalo le leholo la band, sebaka se sephara sa ho senyeha, le ho tsamaisa mocheso ka bongatahara mefuta e fapaneng ya SiC e amehang kgwebong. Ke mofuta o ka sehloohong o sebediswang bakeng salisebelisoa tsa SiC tse nang le motlakase o phahameng le tse matla haholo, joalo ka li-MOSFET le li-diode tsa Schottky.

P3. Melemo ea ho falla ho tloha ho li-substrate tsa SiC tsa lisenthimithara tse 8 ho ea ho tse 12 ke efe?

A:
Sejana sa SiC sa lisenthimithara tse 12 se fana ka:

Habohlokoa haholosebaka se seholo se ka sebelisoang
Tlhahiso e phahameng ea die ka wafer
Karolelano e tlase ea tahlehelo ea moeli
Ho tsamaisana ho ntlafetseng lemela e tsoetseng pele ea tlhahiso ea semiconductor ea lisenthimithara tse 12

Mabaka ana a tlatsetsa ka ho toba hotheko e tlase ka sesebelisoa ka sengle bokgoni bo phahameng ba tlhahiso.

Mabapi le rona

XKH e ikhethile ka nts'etsopele ea theknoloji e phahameng, tlhahiso le thekiso ea khalase e khethehileng ea mahlo le thepa e ncha ea kristale. Lihlahisoa tsa rona li sebeletsa lisebelisoa tsa elektroniki tsa mahlo, lisebelisoa tsa elektroniki tsa bareki le sesole. Re fana ka likarolo tsa mahlo tsa Sapphire, likoahelo tsa lense ea mohala oa thekeng, Ceramics, LT, Silicon Carbide SIC, Quartz, le li-wafer tsa kristale tsa semiconductor. Ka boiphihlelo bo nang le boiphihlelo le lisebelisoa tsa sejoale-joale, re ipabola ts'ebetsong ea lihlahisoa tse seng tsa maemo a holimo, re ikemiselitse ho ba khoebo e etellang pele ea theknoloji e phahameng ea lisebelisoa tsa optoelectronic.