12 inch SiC Substrate N Mofuta Oa Boholo bo Holimo Likopo tsa RF tse sebetsang

Tlhaloso e Khutšoanyane:

The 12-inch SiC substrate e emela tsoelo-pele e kholo ho thekenoloji ea thepa ea semiconductor, e fanang ka melemo ea phetoho bakeng sa lisebelisoa tsa motlakase tsa motlakase le lisebelisoa tse phahameng haholo. Joalo ka sebopeho se seholo sa indasteri se fumanehang khoebong sa silicon carbide wafer, substrate ea 12-inch SiC e thusa moruo o neng o e-so ka o e-ba teng ha o ntse o boloka melemo ea tlhaho ea litšobotsi tse pharalletseng tsa bandgap le thepa e ikhethang ea mocheso. Ha ho bapisoa le li-wafers tse tloaelehileng tsa 6-inch kapa tse nyane tsa SiC, sethala sa li-inch tse 12 se fana ka sebaka se fetang 300% se ka sebelisoang ho feta sephaphatha ka seng, se eketsa haholo chai le ho fokotsa litšenyehelo tsa tlhahiso ea lisebelisoa tsa motlakase. Phetoho ena ea boholo e bonts'a phetoho ea nalane ea li-wafers tsa silicon, moo keketseho e 'ngoe le e' ngoe ea bophara e tlisitseng phokotso e kholo ea litšenyehelo le ntlafatso ea ts'ebetso. The 12-inch SiC substrate's superior conductivity thermal conductivity (hoo e batlang e le 3 × ea silicon) le matla a maholo a ho senyeha ha tšimo a etsa hore e be ea bohlokoa ka ho khetheha bakeng sa litsamaiso tsa likoloi tsa motlakase tsa 800V tsa moloko o latelang, moo e nolofalletsang li-module tsa matla tse sebetsang hantle. Motheong oa 5G, lebelo le phahameng la elektronike saturation le lumella lisebelisoa tsa RF hore li sebetse ka maqhubu a phahameng ka tahlehelo e tlase. Ho lumellana ha substrate le lisebelisoa tsa tlhahiso ea silicon e fetotsoeng ho boetse ho thusa ho amoheloa habonolo ke masela a seng a ntse a le teng, leha ho hlokahala ho ts'oaroa ho khethehileng ka lebaka la boima bo feteletseng ba SiC (9.5 Mohs). Ha palo ea tlhahiso e ntse e eketseha, karoloana ea 12-inch SiC e lebelletsoe ho ba maemo a indasteri bakeng sa lits'ebetso tsa matla a phahameng, ho khanna boqapi ho pholletsa le likoloi, matla a tsosolositsoeng, le lits'ebetso tsa ho fetola matla a indasteri.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litekanyetso tsa tekheniki

Tlhaloso ea 12 inch Silicon Carbide (SiC) Substrate
Kereiti		Tlhahiso ea ZeroMPD Kereiti(Z Kereiti)	Tlhahiso e Tloaelehileng Kereiti(P Grade)		Sehlopha sa Dummy (D Kereiti)
Diameter		3 0 0 limilimithara ~ 1305mm
Botenya	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Off axis : 4.0° ho leba <1120 >±0.5° bakeng sa 4H-N, On axis : <0001>±0.5° bakeng sa 4H-SI
Boima ba Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ho hanyetsa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Maemo a Motheo a Flat		{10-10} ±5.0°
Bolelele ba Phatlalatso ba Pele	4H-N	N/A
	4H-SI	Notch
Kenyelletso ea Edge		3 limilimithara
LTV/TTV/Bow /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Boqhobane		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Leseli Hex Plates By High Intensity Light Libaka tsa Polytype Ka Leseli le Matla a Phahameng Likakaretso tsa Carbon tse bonoang Silicon Surface Scratches By High Intensity Light		Ha ho letho Kakaretso ≤0.05% Ha ho letho Kakaretso ≤0.05% Ha ho letho			Bolelele bo akaretsang ≤ 20 mm, bolelele bo le bong≤2 mm Kakaretso ≤0.1% Kakaretso≤3% Kakaretso ≤3% Bolelele ba kakaretso≤1× bophara ba wafer
Edge Chips Ka Leseli le Matla a Phahameng		Ha ho e lumelletsoeng ≥0.2mm bophara le botebo			7 e lumelletsoe, ≤1 mm ka 'ngoe
(TSD) Ho kheloha ha screw		≤500 cm-2		N/A
(BPD) Ho kheloha ha sefofane sa motheo		≤1000 cm-2		N/A
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng		Ha ho letho
Sephutheloana		Multi-wafer Cassette Kapa Single Wafer Container
Lintlha:
1 Meeli e nang le mefokolo e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. 2Mengoako e lokela ho hlahlojoa ho Si face feela. 3 Lintlha tsa dislocation li tsoa ho li-wafers tse kentsoeng tsa KOH feela.

Likarolo tsa Bohlokoa

1. Molemo o moholo oa boholo ba boholo: The substrate ea SiC ea 12-inch (12-inch silicon carbide substrate) e fana ka sebaka se seholoanyane se nang le sekoahelo se le seng, se nolofalletsang hore li-chips tse ngata li hlahisoe ka sephaphatha, kahoo ho fokotsa litšenyehelo tsa tlhahiso le ho eketsa chai.
2. Lisebelisoa tse Phahameng ka ho Fetisisa: Ho hanyetsa mocheso o phahameng oa Silicon carbide le matla a masimo a ho senyeha ho etsa hore substrate ea 12-inch e be e loketseng bakeng sa lisebelisoa tse phahameng tsa motlakase le tse phahameng, tse kang li-inverters tsa EV le mekhoa ea ho tjhaja ka potlako.
3. Tšebelisano ea Ts'ebetso: Ho sa tsotellehe boima bo phahameng le mathata a ho sebetsana le SiC, substrate ea SiC ea 12-inch e finyella mefokolo e tlaase ea holim'a metsi ka mekhoa e metle ea ho itšeha le ho polishing, ho ntlafatsa lihlahisoa tsa lisebelisoa.
4. Tsamaiso e Phahameng ea Thermal: Ka conductivity e ntle ea mocheso ho feta lisebelisoa tse thehiloeng ka silicon, substrate ea 12-inch e sebetsana ka katleho le ho senya mocheso ka lisebelisoa tse matla a matla, ho eketsa nako ea bophelo ba thepa.

Lisebelisoa tse ka Sehloohong

1. Likoloi tsa Motlakase: The substrate ea 12-inch SiC (12-inch silicon carbide substrate) ke karolo ea mantlha ea mekhoa ea motlakase ea motlakase ea moloko o latelang, e leng ho nolofalletsang li-inverters tse phahameng tse ntlafatsang mefuta le ho fokotsa nako ea ho tjhaja.

2. 5G Base Stations: Li-substrates tsa SiC tse kholo li tšehetsa lisebelisoa tse phahameng tsa RF, tse finyellang litlhoko tsa liteishene tsa motheo tsa 5G bakeng sa matla a phahameng le tahlehelo e tlaase.

3.Industrial Power Supplies: Ka li-inverters tsa letsatsi le li-grids tse bohlale, substrate ea 12-inch e ka mamella maqhubu a phahameng ha e ntse e fokotsa tahlehelo ea matla.

4.Consumer Electronics: Licheja tse potlakileng tsa nako e tlang le lisebelisoa tsa motlakase tsa setsi sa data li ka sebelisa li-substrates tsa SiC tsa 12-inch ho fihlela boholo bo kopanetsoeng le katleho e phahameng.

Litšebeletso tsa XKH

Re ipapisitse le lits'ebeletso tse ikhethileng tsa 12-inch SiC substrates (12-inch silicon carbide substrates), ho kenyelletsa:
1. Dicing & polishing: Ts'ebetso ea substrate e senyehang e tlaase, e phahameng-flatness e lumellanang le litlhoko tsa bareki, ho netefatsa ts'ebetso e tsitsitseng ea lisebelisoa.
2. Tšehetso ea Khōlo ea Epitaxial: Litšebeletso tsa boleng bo phahameng ba epitaxial wafer ho potlakisa tlhahiso ea chip.
3. Small-Batch Prototyping: E ts'ehetsa netefatso ea R&D bakeng sa litsi tsa liphuputso le likhoebo, e khutsufatsa nako ea ntlafatso.
4. Technical Consulting: Litharollo tsa ho qetela ho tloha ho khetho ea thepa ho ea ho ts'ebetsong, ho thusa bareki ho hlōla mathata a ho sebetsana le SiC.
Ebang ke bakeng sa tlhahiso ea bongata kapa mokhoa o ikhethileng, lits'ebeletso tsa rona tsa 12-inch SiC li tsamaisana le litlhoko tsa projeke ea hau, li matlafatsa tsoelo-pele ea mahlale.