12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse bakeng sa mocheso o phahameng oa lisebelisoa tsa mocheso

12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse lisebelisoa tse phahameng tsa mocheso oa mocheso oa mocheso o Featured Image

Tlhaloso e Khutšoanyane:

A 12-inch silicon carbide substrate (SiC substrate) ke boholo bo boholo, bo sebetsang bo phahameng ba lisebelisoa tsa semiconductor tse entsoeng ka kristale e le 'ngoe ea silicon carbide. Silicon carbide (SiC) ke sesebelisoa sa semiconductor sa sehlopha se pharaletseng se nang le thepa e ntle ea motlakase, ea mocheso le ea mochini, e sebelisoang haholo ha ho etsoa lisebelisoa tsa elektroniki ka matla a phahameng, maqhubu a phahameng le maemo a mocheso o phahameng. The substrate ea 12-inch (300mm) ke tlhaloso e tsoetseng pele ea theknoloji ea silicon carbide, e ka ntlafatsang haholo katleho ea tlhahiso le ho fokotsa litšenyehelo.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litšobotsi tsa sehlahisoa

1. Mocheso o phahameng oa mocheso: mocheso oa mocheso oa silicon carbide o feta makhetlo a 3 ho feta a silicon, e leng se loketseng ho senya mocheso oa sesebelisoa sa matla a phahameng.

2. Matla a matla a tšimo ea ho senya: Matla a tšimo ea ho senya ke makhetlo a 10 a silicon, a loketseng likopo tse phahameng tsa khatello.

3.Wide bandgap: Letlapa ke 3.26eV (4H-SiC), e loketseng mocheso o phahameng le lisebelisoa tse phahameng tsa maqhubu.

4. Boima bo phahameng: boima ba Mohs ke 9.2, ea bobeli feela ho daemane, ho hanyetsa ho apara ka mokhoa o babatsehang le matla a mochine.

5. Ho tsitsa ha lik'hemik'hale: ho hanyetsa ho bola ho matla, ts'ebetso e tsitsitseng mocheso o phahameng le tikoloho e thata.

6. Boholo bo boholo: substrate ea 12 inch (300mm), ntlafatsa katleho ea tlhahiso, fokotsa litšenyehelo tsa yuniti.

7.Low defect density: boleng bo phahameng ba theknoloji e le 'ngoe ea khōlo ea kristale ho netefatsa hore ho na le sekoli se tlaase le ho tsitsisa ho phahameng.

Tataiso ea kopo ea mantlha ea sehlahisoa

1. Lisebelisoa tsa elektroniki:

Mosfets: E sebelisoa likoloing tsa motlakase, likoloi tsa liindasteri le li-converter tsa motlakase.

Li-Diode: tse kang Schottky diodes (SBD), tse sebelisetsoang ho lokisa hantle le ho fetola lisebelisoa tsa motlakase.

2. Lisebelisoa tsa Rf:

Rf amplifier ea matla: e sebelisoang liteisheneng tsa 5G tsa puisano le likhokahano tsa satellite.

Lisebelisoa tsa Microwave: Li loketse lisebelisoa tsa puisano tsa radar le tse se nang mohala.

3. Likoloi tse ncha tsa matla:

Sistimi ea ho khanna motlakase: balaoli ba makoloi le li-inverter bakeng sa likoloi tsa motlakase.

Phatlalatso ea ho tjhaja: Mojule oa matla bakeng sa lisebelisoa tsa ho tjhaja kapele.

4. Lisebelisoa tsa indasteri:

High voltage inverter: bakeng sa taolo ea likoloi tsa indasteri le taolo ea matla.

Smart grid: Bakeng sa phetisetso ea HVDC le li-transformer tsa motlakase tsa motlakase.

5. Sepakapaka:

Mocheso o phahameng oa elektronike: o loketse maemo a mocheso a phahameng a lisebelisoa tsa sefofane.

6. Sebaka sa lipatlisiso:

Patlisiso e pharaletseng ea semiconductor ea bandgap: bakeng sa nts'etsopele ea lisebelisoa le lisebelisoa tse ncha tsa semiconductor.

The 12-inch silicon carbide substrate ke mofuta o phahameng oa ts'ebetso ea semiconductor ea thepa e nang le thepa e ntle joalo ka conductivity e phahameng ea mocheso, matla a maholo a ho senyeha ha tšimo le lekhalo le pharaletseng la lihlopha. E sebelisoa haholo ho lisebelisoa tsa elektronike tse matla, lisebelisoa tsa maqhubu a seea-le-moea, likoloi tse ncha tsa matla, taolo ea indasteri le sefofane, 'me ke thepa ea bohlokoa ho khothalletsa nts'etsopele ea moloko o latelang oa lisebelisoa tsa elektronike tse sebetsang hantle le tse phahameng.

Leha li-substrates tsa silicon carbide hajoale li na le lits'ebetso tse fokolang tse tobileng ho lisebelisoa tsa elektroniki tsa bareki joalo ka likhalase tsa AR, bokhoni ba tsona ba taolo e nepahetseng ea matla le lisebelisoa tsa elektroniki tse nyane li ka ts'ehetsa litharollo tsa phepelo ea motlakase tse bobebe, tse sebetsang hantle bakeng sa lisebelisoa tsa AR/VR tsa nako e tlang. Hajoale, nts'etsopele ea mantlha ea silicon carbide substrate e tsepamisitsoe libakeng tsa indasteri joalo ka likoloi tse ncha tsa matla, meaho ea puisano le boiketsetso ba indasteri, mme e khothaletsa indasteri ea semiconductor ho nts'etsapele ka tsela e sebetsang hantle le e tšepahalang.

XKH e ikemiselitse ho fana ka li-substrates tsa 12 "SIC tsa boleng bo holimo tse nang le ts'ehetso le lits'ebeletso tse felletseng, ho kenyelletsa:

1. Tlhahiso e ikhethileng: Ho ea ka litlhoko tsa bareki ho fana ka resistivity e fapaneng, mokhoa oa kristale le substrate ea phekolo ea holim'a metsi.

2. Ts'ebetso ea ts'ebetso: Fana ka bareki ka tšehetso ea tekheniki ea kholo ea epitaxial, tlhahiso ea lisebelisoa le mekhoa e meng ea ho ntlafatsa ts'ebetso ea sehlahisoa.

3. Teko le setifikeiti: Fana ka tlhahlobo e tiileng ea sekoli le setifikeiti sa boleng ho netefatsa hore substrate e kopana le maemo a indasteri.

Tšebelisano ea 4.R&d: Ka kopanelo hlahisa lisebelisoa tse ncha tsa silicon carbide le bareki ho khothaletsa boqapi ba theknoloji.

Chate ea data

Tlhaloso ea Substrate ea 1 2 inch Silicon Carbide (SiC).
Kereiti		Tlhahiso ea ZeroMPD Kereiti(Z Kereiti)	Tlhahiso e Tloaelehileng Kereiti(P Grade)		Sehlopha sa Dummy (D Kereiti)
Diameter		3 0 0 limilimithara ~ 305mm
Botenya	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Off axis : 4.0° ho leba <1120 >±0.5° bakeng sa 4H-N, On axis : <0001>±0.5° bakeng sa 4H-SI
Boima ba Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ho hanyetsa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Maemo a Motheo a Flat		{10-10} ±5.0°
Bolelele ba Phatlalatso ba Pele	4H-N	N/A
	4H-SI	Notch
Kenyelletso ea Edge		3 limilimithara
LTV/TTV/Bow /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Boqhobane		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Leseli Hex Plates By High Intensity Light Libaka tsa Polytype Ka Leseli le Matla a Phahameng Likakaretso tsa Carbon tse bonoang Silicon Surface Scratches By High Intensity Light		Ha ho letho Kakaretso ≤0.05% Ha ho letho Kakaretso ≤0.05% Ha ho letho			Bolelele bo akaretsang ≤ 20 mm, bolelele bo le bong≤2 mm Kakaretso ≤0.1% Kakaretso≤3% Kakaretso ≤3% Bolelele ba kakaretso≤1× bophara ba wafer
Edge Chips Ka Leseli le Matla a Phahameng		Ha ho e lumelletsoeng ≥0.2mm bophara le botebo			7 e lumelletsoe, ≤1 mm ka 'ngoe
(TSD) Ho kheloha ha screw		≤500 cm-2		N/A
(BPD) Ho kheloha ha sefofane sa motheo		≤1000 cm-2		N/A
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng		Ha ho letho
Sephutheloana		Multi-wafer Cassette Kapa Single Wafer Container
Lintlha:
1 Meeli e nang le mefokolo e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. 2Mengoako e lokela ho hlahlojoa ho Si face feela. 3 Lintlha tsa dislocation li tsoa ho li-wafers tse kentsoeng tsa KOH feela.

XKH e tla tsoelapele ho tsetela lipatlisiso le nts'etsopele ho ntšetsa pele katleho ea 12-inch silicon carbide substrates ka boholo bo boholo, bofokoli bo tlaase le ho tsitsa ho phahameng, ha XKH e hlahloba lits'ebetso tsa eona libakeng tse hlahang tse kang lisebelisoa tsa elektronike tsa bareki (tse kang li-module tsa matla bakeng sa lisebelisoa tsa AR / VR) le quantum computing. Ka ho fokotsa litšenyehelo le ho eketsa bokhoni, XKH e tla tlisa katleho ho indasteri ea semiconductor.