150mm 200mm 6inch 8inch GaN ho Silicon Epi-layer wafer Gallium nitride epitaxial wafer

Tlhaloso e Khutšoanyane:

The 6-inch GaN Epi-layer wafer ke thepa ea boleng bo holimo ea semiconductor e nang le likarolo tsa gallium nitride (GaN) e holisitsoeng holim'a silicon substrate. Thepa e na le thepa e ntle ea lipalangoang tsa elektroniki mme e loketse ho etsa lisebelisoa tsa semiconductor tse matla le tse phahameng haholo.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Mokhoa oa tlhahiso

Ts'ebetso ea tlhahiso e kenyelletsa ho holisa likarolo tsa GaN holim'a sapphire substrate ho sebelisa mekhoa e tsoetseng pele joalo ka tšepe-organic chemical vapor deposition (MOCVD) kapa molecular beam epitaxy (MBE). Ts'ebetso ea deposition e etsoa tlasa maemo a laoloang ho netefatsa boleng bo phahameng ba kristale le filimi e ts'oanang.

Lisebelisoa tsa 6inch GaN-On-Sapphire: 6-inch sapphire substrate chips e sebelisoa haholo puisanong ea microwave, tsamaiso ea radar, theknoloji e se nang mohala le optoelectronics.

Lisebelisoa tse ling tse tloaelehileng li kenyelletsa

1. Rf amplifier ea matla

2. Indasteri ea mabone a LED

3. Thepa ea puisano ea marang-rang e se nang mohala

4. Lisebelisoa tsa elektronike sebakeng se phahameng sa mocheso

5. Lisebelisoa tsa Optoelectronic

Litlhaloso tsa sehlahisoa

- Boholo: The substrate bophara ke 6 inches (hoo e ka bang 150 mm).

- Boleng ba bokaholimo: Bokaholimo bo bentšitsoe hantle ho fana ka boleng bo botle ba seipone.

- Botenya: Botenya ba GaN layer bo ka etsoa ho latela litlhoko tse ikhethang.

- Packaging: Substrate e tletse ka hloko ka thepa ea anti-static ho thibela tšenyo nakong ea lipalangoang.

- Maqhubu a ho beoa: Substrate e na le likarolo tse ikhethileng tse thusang ho tsamaisana le ts'ebetso nakong ea ho lokisoa ha sesebelisoa.

- Mekhahlelo e meng: Litekanyetso tse ikhethileng joalo ka botenya, ho hanyetsa le khatello ea doping li ka fetoloa ho latela litlhoko tsa bareki.

Ka thepa ea bona ea boleng bo holimo le lits'ebetso tse fapaneng, li-wafers tsa sapphire substrate tsa 6-inch ke khetho e tšepahalang bakeng sa nts'etsopele ea lisebelisoa tse sebetsang hantle tsa semiconductor liindasteri tse fapaneng.

Substrate	6” 1mm <111> p-mofuta oa Si	6” 1mm <111> p-mofuta oa Si
Epi ThickAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Inamela	+/- 45um	+/- 45um
Ho petsoha	<5 limilimithara	<5 limilimithara
BV e otlolohileng	> 1000V	> 1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
Tlhaloso: 2DEG	~10¹³cm^-2	~10¹³cm^-2
Motsamao	~ 2000cm²/Vs (<2%)	~ 2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)