2 inch SiC Wafers 6H kapa 4H Semi-Insulating SiC Substrates Dia50.8mm
Tšebeliso ea silicon carbide substrate
Silicon carbide substrate e ka aroloa ka mofuta oa conductive le mofuta oa semi-insulating ho latela resistivity. Lisebelisoa tsa silicon carbide tse tsamaisang li sebelisoa haholo likoloing tsa motlakase, tlhahiso ea matla a photovoltaic, lipalangoang tsa terene, litsi tsa data, ho tjhaja le lisebelisoa tse ling. Indasteri ea likoloi tsa motlakase e na le tlhokahalo e kholo ea li-conductive silicon carbide substrates, 'me hajoale, Tesla, BYD, NIO, Xiaopeng le lik'hamphani tse ling tse ncha tsa likoloi tsa matla li rerile ho sebelisa lisebelisoa kapa li-module tsa silicon carbide discrete.
Lisebelisoa tsa semi-insulated silicon carbide li sebelisoa haholo-holo puisanong ea 5G, puisano ea likoloi, lits'ebetso tsa ts'ireletso ea naha, phetisetso ea data, sefofane le masimo a mang. Ka ho holisa gallium nitride epitaxial layer holim'a semi-insulated silicon carbide substrate, gallium nitride epitaxial wafer e thehiloeng ho silicon e ka etsoa lisebelisoa tsa microwave RF, tse sebelisoang haholo lebaleng la RF, joalo ka liamplifi tsa motlakase puisanong ea 5G le. lisebelisoa tsa radio tshireletsong ya naha.
Ho etsoa ha lihlahisoa tsa silicon carbide substrate ho kenyelletsa nts'etsopele ea lisebelisoa, tlhahiso ea thepa e tala, kholo ea kristale, seha sa kristale, ts'ebetso ea liphaephe, ho hloekisa le ho etsa liteko, le lihokelo tse ling tse ngata. Mabapi le lisebelisoa tse tala, indasteri ea Songshan Boron e fana ka lisebelisoa tse tala tsa silicon carbide bakeng sa 'maraka,' me e fihletse thekiso e nyenyane ea batch. Lisebelisoa tsa semiconductor tsa moloko oa boraro tse emeloang ke silicon carbide li bapala karolo ea bohlokoa indastering ea sejoale-joale, ka ho potlakisa ho kenella ha likoloi tse ncha tsa matla le lits'ebetso tsa photovoltaic, tlhokahalo ea silicon carbide substrate e haufi le ho tlisa ntlha ea ho kenella.