2 inch Silicon Carbide Wafers 6H kapa 4H N-mofuta kapa Semi-Insulating SiC Substrates

4H SiC sephaphatha N-mofuta
Diameter: 2 inch 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Mokhoa: ho tloha ho 4.0˚ ho leba <1120> ± 0.5˚
Ho hanyetsa: <0.1 ohm.cm
Bokhopo: Si-face CMP Ra <0.5nm, C-face optical polish Ra <1 nm

4H SiC sephaphatha Semi-insulating
Diameter: 2 inch 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Boemo: ho axis {0001} ± 0.25˚
Ho hanyetsa: > 1E5 ohm.cm
Bokhopo: Si-face CMP Ra <0.5nm, C-face optical polish Ra <1 nm

1. Meralo ea motheo ea 5G -- phepelo ea motlakase ea puisano.
Phepelo ea motlakase ea puisano ke motheo oa matla bakeng sa puisano ea li-server le setsi sa motheo. E fana ka matla a motlakase bakeng sa lisebelisoa tse fapaneng tsa phetisetso ho netefatsa ts'ebetso e tloaelehileng ea mokhoa oa puisano.

2. Ho tjhaja qubu ea likoloi tse ncha tsa matla -- module ea matla ea qubu ea ho tjhaja.
Bokhoni bo phahameng le matla a phahameng a mojule oa matla a qubu ea ho tjhaja a ka bonoa ka ho sebelisa silicon carbide mochining oa motlakase oa qubu ea ho tjhaja, e le ho ntlafatsa lebelo la ho tjhaja le ho fokotsa litšenyehelo tsa ho tjhaja.

3. Setsi se seholo sa data, Inthanete ea Indasteri -- phepelo ea matla a seva.
Sesebelisoa sa motlakase ke laeborari ea matla ea seva. Seva e fana ka matla a ho netefatsa ts'ebetso e tloaelehileng ea sistimi ea seva. Tšebeliso ea likarolo tsa matla a silicon carbide ho phepelo ea matla a seva e ka ntlafatsa matla a matla le bokhoni ba phepelo ea matla a seva, ea fokotsa molumo oa setsi sa data ka kakaretso, ea fokotsa litšenyehelo tsa kaho ea setsi sa data, le ho fihlela tikoloho e phahameng. bokgabane.

4. Uhv - Tshebediso ya flexible phetiso DC potoloho breakers.

5. Seporo sa lebelo le phahameng le seporo sa literene tse hokahaneng -- li-converter, li-transformer tsa motlakase tsa motlakase, li-converter tse thusang, lisebelisoa tse thusang tsa motlakase.