200mm 8inch GaN holim'a sapphire Epi-layer wafer substrate

Tlhaloso e Khutšoanyane:

Ts'ebetso ea tlhahiso e kenyelletsa kholo ea epitaxial ea lera la GaN holim'a Sapphire substrate e sebelisang mekhoa e tsoetseng pele e kang metal-organic chemical vapor deposition (MOCVD) kapa molecular beam epitaxy (MBE). Deposition e etsoa tlas'a maemo a laoloang ho netefatsa boleng bo phahameng ba kristale le ho tšoana ha filimi.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Kenyelletso ea sehlahisoa

The 8-inch GaN-on-Sapphire substrate ke thepa ea boleng bo holimo ea semiconductor e entsoeng ka lera la Gallium Nitride (GaN) e hōlileng holim'a Sapphire substrate. Thepa ena e fana ka thepa e ntle ea lipalangoang tsa elektroniki 'me e loketse bakeng sa ho etsoa ha lisebelisoa tsa semiconductor tse matla le tse phahameng haholo.

Mokhoa oa ho Etsa

Lisebelisoa

Karolo e ka tlase ea 8-inch GaN-on-Sapphire e fumana lits'ebetso tse pharalletseng mafapheng a fapaneng ho kenyelletsa likhokahano tsa microwave, radarsystems, thekenoloji e se nang mohala, le optoelectronics. Tse ling tsa lisebelisoa tse tloaelehileng li kenyelletsa:

1. Li-amplifiers tsa matla tsa RF

2. Indasteri ea mabone a LED

3. Lisebelisoa tsa puisano tsa marang-rang tse se nang mohala

4. Lisebelisoa tsa elektronike bakeng sa libaka tse phahameng tsa mocheso

5. Olisebelisoa tsa ptoelectronic

Litlhaloso tsa Sehlahisoa

-Dimension: The substrate size ke 8 inches (200 mm) bophara.

- Boleng ba Bokaholimo: Bokaholimo bo bentšitsoe ka boreleli bo phahameng mme bo bonts'a boleng bo botle bo kang ba seipone.

- Botenya: Botenya ba GaN layer bo ka etsoa ho latela litlhoko tse itseng.

- Packaging: Substrate e phuthetsoe ka hloko ka thepa ea anti-static ho thibela tšenyo nakong ea lipalangoang.

- Orientation Flat: The substrate e na le sebaka se ikhethileng sa sebopeho ho thusa ho hokahanya le ho sebetsana le li-wafer nakong ea ts'ebetso ea ho etsa lisebelisoa.

- Litekanyetso tse ling: Lintlha tsa botenya, boits'oaro le khatello ea dopant li ka hlophisoa ho latela litlhoko tsa bareki.

Ka thepa ea eona e phahameng ea thepa le lits'ebetso tse fapaneng, karoloana ea 8-inch GaN-on-Sapphire ke khetho e tšepahalang bakeng sa nts'etsopele ea lisebelisoa tse sebetsang hantle tsa semiconductor liindasteri tse fapaneng.

Ntle le GaN-On-Sapphire, re ka boela ra fana ka lisebelisoa tsa lisebelisoa tsa matla, lelapa la sehlahisoa le kenyelletsa li-wafers tsa epitaxial tsa 8-inch AlGaN/GaN-on-Si le 8-inch P-cap AlGaN/GaN-on-Si epitaxial. liphaphatha. Ka nako e ts'oanang, re ile ra qapa ts'ebeliso ea theknoloji ea eona e tsoetseng pele ea 8-inch GaN epitaxy lebaleng la microwave, 'me ra etsa 8-inch AlGaN/GAN-on-HR Si epitaxy wafer e kopanyang ts'ebetso e phahameng ka boholo bo boholo, theko e tlase. 'me e lumellana le ts'ebetso e tloaelehileng ea lisebelisoa tsa 8-inch. Ntle le silicon-based gallium nitride, re boetse re na le mohala oa sehlahisoa oa AlGaN/GaN-on-SiC epitaxial wafers ho fihlela litlhoko tsa bareki bakeng sa lisebelisoa tsa silicon-based gallium nitride epitaxial.