200mm 8inch GaN holim'a substrate ea wafer ea safire ea Epi-layer

200mm 8inch GaN hodima substrate ya wafer ya safire Epi-layer Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Ts'ebetso ea tlhahiso e kenyelletsa kholo ea epitaxial ea lera la GaN holim'a substrate ea Sapphire ho sebelisoa mekhoa e tsoetseng pele joalo ka metal-organic chemical vapor deposition (MOCVD) kapa molecular beam epitaxy (MBE). Deposition e etsoa tlas'a maemo a laoloang ho netefatsa boleng bo phahameng ba kristale le ho tšoana ha filimi.

Romella imeile ho rona

Likaroloana

Selelekela sa sehlahisoa

Karoloana ea GaN-on-Sapphire ea lisenthimithara tse 8 ke thepa ea semiconductor ea boleng bo holimo e entsoeng ka lera la Gallium Nitride (GaN) le holisitsoeng holim'a karoloana ea Sapphire. Thepa ena e fana ka thepa e ntle ea lipalangoang tsa elektroniki 'me e loketse ho etsoa ha lisebelisoa tsa semiconductor tse matla haholo le tse nang le maqhubu a phahameng.

Mokhoa oa Tlhahiso

Likopo

Karolo e ka tlase ea GaN-on-Sapphire ea lisenthimithara tse 8 e fumana lits'ebetso tse pharalletseng mafapheng a fapaneng ho kenyeletsoa puisano ea microwave, litsamaiso tsa radar, theknoloji ea waelese le lisebelisoa tsa optoelectronics. Tse ling tsa lits'ebetso tse tloaelehileng li kenyelletsa:

1. Li-amplifier tsa matla a RF

2. Indasteri ea mabone a LED

3. Lisebelisoa tsa puisano tsa marang-rang a se nang mohala

4. Lisebelisoa tsa elektroniki bakeng sa libaka tse nang le mocheso o phahameng

5. Olisebelisoa tsa ptoelectronic

Litlhaloso tsa Sehlahisoa

-Tekanyo: Boholo ba substrate ke bophara ba lisenthimithara tse 200 (200 mm).

- Boleng ba Bokaholimo: Bokaholimo bo bentšitsoe ka mokhoa o phahameng oa boreledi 'me bo bontša boleng bo botle bo kang ba seipone.

- Botenya: Botenya ba lera la GaN bo ka fetoloa ho latela litlhoko tse itseng.

- Sephutheloana: Substrate e phuthetsoe ka hloko ka thepa e sa fetoheng ho thibela tšenyo nakong ea ho tsamaea.

- Ho Orientation Flat: Substrate e na le orientation flat e itseng ho thusa ho orientation le ho sebetsana le wafer nakong ya ditsamaiso tsa tlhahiso ya sesebediswa.

- Liparamente tse ling: Lintlha tse ikhethang tsa botenya, ho hanyetsa, le ho tsepamisa maikutlo ho ka etsoa ho latela litlhoko tsa bareki.

Ka thepa ea eona e ntle ea thepa le lits'ebetso tse feto-fetohang, substrate ea GaN-on-Sapphire ea lisenthimithara tse 8 ke khetho e tšepahalang bakeng sa nts'etsopele ea lisebelisoa tsa semiconductor tse sebetsang hantle liindastering tse fapaneng.

Ntle le GaN-On-Sapphire, re ka boela ra fana ka ts'ebetsong ea lisebelisoa tsa motlakase, lelapa la sehlahisoa le kenyelletsa li-wafer tsa epitaxial tsa AlGaN/GaN-on-Si tsa lisenthimithara tse 8 le li-wafer tsa epitaxial tsa AlGaN/GaN-on-Si tsa lisenthimithara tse 8. Ka nako e ts'oanang, re qapile ts'ebeliso ea theknoloji ea eona e tsoetseng pele ea GaN epitaxy ea lisenthimithara tse 8 tšimong ea microwave, 'me ra nts'etsapele wafer ea AlGaN/GAN-on-HR Si epitaxy ea lisenthimithara tse 8 e kopanyang ts'ebetso e phahameng le boholo bo boholo, litšenyehelo tse tlase le e lumellanang le ts'ebetso e tloaelehileng ea sesebelisoa sa lisenthimithara tse 8. Ntle le gallium nitride e thehiloeng ho silicon, re boetse re na le letoto la lihlahisoa tsa li-wafer tsa epitaxial tsa AlGaN/GaN-on-SiC ho fihlela litlhoko tsa bareki bakeng sa thepa ea epitaxial ea gallium nitride e thehiloeng ho silicon.