2inch 3inch 4inch InP epitaxial wafer substrate APD detector bakeng sa likhokahano tsa fiber optic kapa LiDAR

2inch 3inch 4inch InP epitaxial wafer substrate APD light detector for fiber optic communications kapa LiDAR Featured Image

Tlhaloso e Khutšoanyane:

InP epitaxial substrate ke thepa ea motheo bakeng sa ho etsa APD, hangata e le thepa ea semiconductor e behiloeng holim'a substrate ka theknoloji ea kgolo ea epitaxial. Lisebelisoa tse sebelisoang ka tloaelo li kenyelletsa silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), joalo-joalo, e nang le thepa e ntle ea photoelectric. APD photodetector ke mofuta o khethehileng oa photodetector o sebelisang avalanche photoelectric effect ho matlafatsa lets'oao la ho lemoha. Ha ketsahalo ea photon ho APD, lipara tsa elektrone-hole lia hlahisoa. Ho potlakisa ha bajari bana tlas'a ts'ebetso ea motlakase ho ka lebisa ho thehoeng ha bajari ba bangata, "phello ea avalanche", e leng ho matlafatsang haholo tlhahiso ea hona joale.
Li-wafers tsa Epitaxial tse holisitsoeng ke MOCvD ke sepheo sa lits'ebetso tsa avalanche photodetection diode. Lera la ho monya le hlophisitsoe ke lisebelisoa tsa U-InGaAs tse nang le doping e ka morao <5E14. Sebaka se sebetsang se ka sebelisa InP kapa InAlAslayer. InP epitaxial substrate ke sesebelisoa sa mantlha sa ho etsa APD, se khethollang ts'ebetso ea optical detector. APD photodetector ke mofuta oa high sensitivity photodetector, e sebelisoang haholo litabeng tsa puisano, ho utloa le ho nka litšoantšo.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Lintlha tsa bohlokoa tsa Letlapa la InP laser epitaxial li kenyelletsa

1. Litšobotsi tsa lekhalo la lihlopha: InP e na le lekhalo le moqotetsane, le loketseng bakeng sa ho lemoha khanya ea maqhubu a nako e telele, haholo-holo sebakeng sa leqhubu la 1.3μm ho ea ho 1.5μm.
2. Ts'ebetso ea optical: Filimi ea InP epitaxial e na le ts'ebetso e ntle ea optical, e kang matla a khanyang le bokhoni ba ka ntle ba quantum ka mahlakore a fapaneng a maqhubu. Mohlala, ho 480 nm, matla a khanyang le katleho ea quantum ea kantle ke 11.2% le 98.8%, ka ho latellana.
3. Li-Carrier dynamics: InP nanoparticles (NPs) e bonts'a boitšoaro bo habeli ba ho bola ha li-exponential nakong ea kholo ea epitaxial. Nako ea ho bola ka potlako e bakoa ke ente ea mopalami ka har'a lera la InGaAs, ha nako ea ho bola butle e amana le ho kopanngoa ha bajari ho InP NPs.
4. Litšobotsi tse phahameng tsa mocheso: AlGaInAs / InP quantum well material e na le ts'ebetso e babatsehang ka mocheso o phahameng, o ka thibelang ho phalla ha molapo ka katleho le ho ntlafatsa litšobotsi tse phahameng tsa mocheso oa laser.
5. Ts'ebetso ea tlhahiso: Lipampiri tsa InP epitaxial li atisa ho lengoa ka substrate ka molek'hule beam epitaxy (MBE) kapa tšepe-organic chemical vapor deposition (MOCVD) theknoloji ho finyella lifilimi tsa boleng bo phahameng.
Litšobotsi tsena li etsa hore li-wafers tsa InP laser epitaxial li be le lits'ebetso tsa bohlokoa puisanong ea optical fiber, kabo ea senotlolo sa quantum le ho lemoha hole.

Lisebelisoa tsa mantlha tsa matlapa a InP laser epitaxial a kenyelletsa

1. Photonics: Li-lasers tsa InP le li-detectors li sebelisoa haholo lipuisanong tsa optical, litsi tsa data, imaging infrared, biometrics, 3D sensing le LiDAR.

2. Mehala ea puisano: Lisebelisoa tsa InP li na le litšebeliso tsa bohlokoa ho kopanyeng ho hoholo ha silicon-based long-wavelength lasers, haholo-holo ho optical fiber communications.

3. Li-lasers tsa infrared: Lisebelisoa tsa InP-based quantum well lasers ka har'a sehlopha sa bohareng ba infrared (joaloka li-microns tse 4-38), ho kenyelletsa le ho lemoha khase, ho lemoha ha ho phatloha le ho nka litšoantšo ka infrared.

4. Silicon photonics: Ka theknoloji e fapaneng ea ho kopanya, laser ea InP e fetisetsoa ho substrate e thehiloeng ho silicon ho etsa sethala sa ho kopanya silicon optoelectronic e mengata e sebetsang.

Li-lasers tsa 5.High performance lasers: Lisebelisoa tsa InP li sebelisetsoa ho etsa li-laseser tse phahameng tsa ts'ebetso, tse kang InGaAsP-InP-InP transistor lasers tse nang le leqhubu la 1.5 microns.

XKH e fana ka li-wafers tse entsoeng ka InP epitaxial tse nang le mekhoa e fapaneng le botenya, tse koahelang mefuta e sa tšoaneng ea lisebelisoa tse kang optical communications, sensors, 4G / 5G base stations, joalo-joalo Lihlahisoa tsa XKH li etsoa ka lisebelisoa tse tsoetseng pele tsa MOCVD ho netefatsa hore ts'ebetso e phahameng le ho tšepahala. Mabapi le lisebelisoa, XKH e na le litsela tse ngata tsa mehloli ea machaba, e khona ho sebetsana le palo ea litaelo ka mokhoa o bonolo, 'me e fane ka litšebeletso tsa bohlokoa tse kang ho fokotsa, ho arola, joalo-joalo. Mekhoa e metle ea ho fana ka thepa e netefatsa hore ho tsamaisoa ka nako le ho finyella litlhoko tsa bareki bakeng sa boleng le linako tsa ho fana. Kamora ho fihla, bareki ba ka fumana tšehetso e felletseng ea tekheniki le ts'ebeletso ea kamora thekiso ho netefatsa hore sehlahisoa se sebelisoa hantle.