2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos

Tlhaloso e Khutšoanyane:

The 6H n-type Silicon Carbide (SiC) single-crystal substrate ke thepa ea bohlokoa ea semiconductor e sebelisoang haholo lits'ebetsong tsa elektronike tse matla, tse phahameng, le mocheso o phahameng. E tsebahala ka sebopeho sa eona sa kristale sa hexagonal, 6H-N SiC e fana ka sehlopha se pharaletseng le conductivity e phahameng ea mocheso, e etsa hore e be e loketseng bakeng sa tikoloho e hlokang.
Sebaka sa motlakase se senyehang haholo le ho sisinyeha ha elektrone ho thusa ho nts'etsapele lisebelisoa tsa elektroniki tse sebetsang hantle, joalo ka li-MOSFET le li-IGBT, tse ka sebetsang ka matla le mocheso o phahameng ho feta o entsoeng ka silicon ea setso. Ts'ebetso ea eona e ntle ka ho fetisisa ea mocheso e tiisa hore ho felloa ke mocheso ka katleho, ho bohlokoa bakeng sa ho boloka ts'ebetso le ho tšepahala lits'ebetsong tse phahameng tsa matla.
Lits'ebetsong tsa radiofrequency (RF), thepa ea 6H-N SiC e ts'ehetsa ho theoa ha lisebelisoa tse khonang ho sebetsa maemong a holimo ka katleho e ntlafalitsoeng. Ho tsitsa ha eona ka lik'hemik'hale le ho hanyetsa mahlaseli a kotsi le hona ho etsa hore e tšoanelehe bakeng sa ho sebelisoa libakeng tse thata, ho kenyeletsoa libaka tsa lifofane le tsa tšireletso.
Ho feta moo, li-substrates tsa 6H-N SiC li bohlokoa ho lisebelisoa tsa optoelectronic, tse kang li-photodetectors tsa ultraviolet, moo li-bandgap tsa tsona tse pharaletseng li lumellang ho lemoha mahlaseli a UV. Motsoako oa thepa ena o etsa hore 6H n-type SiC e be lisebelisoa tse fapaneng le tsa bohlokoa ho nts'etsapele mahlale a sejoale-joale a elektroniki le a optoelectronic.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Lintlha tse latelang ke litšobotsi tsa silicon carbide wafer:

· Lebitso la Sehlahisoa: SiC Substrate
· Sebopeho sa Hexagonal: Thepa e ikhethang ea elektronike.
· High Electron Mobility: ~ 600 cm²/V·s.
· Ho tsitsa ha Lik'hemik'hale: Ho hana ho bola.
· Radiation Resistance: E loketse tikoloho e thata.
· Low Intrinsic Carrier Concentration: E sebetsa hantle ho mocheso o phahameng.
· Ho tšoarella: Thepa e matla ea mochini.
· Bokhoni ba Optoelectronic: Ho lemoha ka katleho lebone la UV.

Silicon carbide wafer e na le lisebelisoa tse 'maloa

Lisebelisoa tsa SiC wafer:
Li-substrates tsa SiC (Silicon Carbide) li sebelisoa lits'ebetsong tse fapaneng tsa ts'ebetso e phahameng ka lebaka la thepa ea tsona e ikhethang joalo ka conductivity e phahameng ea mocheso, matla a maholo a motlakase, le lekhalo le pharaletseng. Likopo tse ling ke tsena:

1.Motlakase oa Elektronike:
·Li-MOSFET tse matla a phahameng
·IGBTs (Insulated Gate Bipolar Transistors)
·Schottky diode
· Li-inverters tsa motlakase

2. Lisebelisoa tsa Maqhubu a Phahameng:
· Li-amplifiers tsa RF (Radio Frequency).
· Li-transistor tsa Microwave
· Lisebelisoa tsa millimeter-wave

3.Mocheso o Phahameng oa Elektronike:
· Li-sensor le li-circuits bakeng sa tikoloho e thata
· Lisebelisoa tsa elektroniki tsa sepakapaka
·Lisebelisoa tsa elektroniki tsa likoloi (mohlala, likarolo tsa taolo ea enjine)

4. Optoelectronics:
· Li-photodetectors tsa Ultraviolet (UV).
·Light-emitting diodes (LED)
· Li-diode tsa laser

5.Litsamaiso tsa Matla a Tsosolositsoeng:
· Li-inverters tsa letsatsi
· Li-converter tsa turbine ea moea
· Likoloi tsa motlakase tsa motlakase

6.Indasteri le Tšireletso:
· Sistimi ea radar
· Lipuisano tsa satellite
·Sesebelisoa sa nyutlelie

SiC wafer Customization

Re ka etsa boholo ba SiC substrate ho fihlela litlhoko tsa hau tse ikhethileng. Hape re fana ka 4H-Semi HPSI SiC wafer e nang le boholo ba 10x10mm kapa 5x5 mm.
Theko e khethoa ke nyeoe, 'me lintlha tsa ho paka li ka etsoa ho ea ka khetho ea hau.
Nako ea thomello e ka hare ho libeke tse 2-4. Re amohela tefo ka T/T.
Feme ea rona e na le lisebelisoa tse tsoetseng pele tsa tlhahiso le sehlopha sa botekgeniki, se ka khonang ho etsa litlhaloso tse fapaneng, botenya le libopeho tsa sephaphatha sa SiC ho latela litlhoko tse khethehileng tsa bareki.