3inch SiC substrate Production Dia76.2mm 4H-N

Likarolo tse kholo tsa 3 inch silicon carbide mosfet wafers ke tse latelang;

Silicon Carbide (SiC) ke lisebelisoa tsa semiconductor tse nang le li-bandgap tse pharaletseng, tse khetholloang ka ho tsamaisa mocheso o phahameng, ho tsamaea ha elektronike e phahameng, le matla a maholo a ho senyeha ha motlakase. Mehaho ena e etsa hore li-wafers tsa SiC li hlahelle ka matla a phahameng, maqhubu a phahameng, le lisebelisoa tse phahameng tsa mocheso. Haholo-holo ka polytype ea 4H-SiC, sebopeho sa eona sa kristale se fana ka ts'ebetso e ntle ea elektronike, e leng se etsang hore e be thepa ea khetho bakeng sa lisebelisoa tsa motlakase tsa matla.

Sephaphatha sa 3-inch Silicon Carbide 4H-N ke sephaphatha se nang le naetrojene se nang le conductivity ea mofuta oa N. Mokhoa ona oa doping o fa sephaphatha mohopolo o phahameng oa elektrone, ka hona o ntlafatsa ts'ebetso ea sesebelisoa. Bophahamo ba wafer, ka lisenthimithara tse 3 (bophara ba 76.2 mm), ke tekanyo e sebelisoang hangata indastering ea semiconductor, e loketseng lits'ebetso tse fapaneng tsa tlhahiso.

Sephaphatha sa Silicon Carbide 4H-N sa 3-inch se hlahisoa ho sebelisoa mokhoa oa Physical Vapor Transport (PVT). Ts'ebetso ena e kenyelletsa ho fetola phofo ea SiC hore e be likristale tse le 'ngoe ka mocheso o phahameng, ho netefatsa boleng ba kristale le ho tšoana ha sephaphatha. Ho feta moo, botenya ba wafer hangata bo ka ba 0.35 mm, 'me bokaholimo ba eona bo belisoa ka mahlakoreng a mabeli ho fihlela boemo bo holimo haholo ba boreleli le boreleli, bo bohlokoa bakeng sa lits'ebetso tse latelang tsa tlhahiso ea semiconductor.

Mefuta e fapaneng ea ts'ebeliso ea 3-inch Silicon Carbide 4H-N wafer e pharaletse, ho kenyeletsoa lisebelisoa tsa elektroniki tse matla haholo, lisensara tsa mocheso o phahameng, lisebelisoa tsa RF le lisebelisoa tsa optoelectronic. Ts'ebetso ea eona e ntle haholo le ts'epahalo e thusa lisebelisoa tsena ho sebetsa ka mokhoa o tsitsitseng tlas'a maemo a feteletseng, ho fihlela tlhoko ea lisebelisoa tsa semiconductor tse sebetsang hantle indastering ea sejoale-joale ea elektroniki.

Re ka fana ka substrate ea 4H-N 3inch SiC, limaraka tse fapaneng tsa li-wafers tsa stock. Re ka boela ra hlophisa customization ho latela litlhoko tsa hau. Rea u amohela ho botsa!