Substrate ea SiC ea lisenthimithara tse 3 ea tlhahiso Dia76.2mm 4H-N

Likarolo tse ka sehloohong tsa li-wafer tsa silicon carbide mosfet tsa lisenthimithara tse 3 ke tse latelang;

Silicon Carbide (SiC) ke thepa ea semiconductor e nang le lekhalo le leholo, e khetholloang ka ho khanna mocheso o phahameng, ho tsamaea ha lielektrone tse ngata, le matla a tšimo ea motlakase a senyehang haholo. Litšobotsi tsena li etsa hore li-wafer tsa SiC li hlahelle lits'ebetsong tse matla a phahameng, maqhubu a phahameng le mocheso o phahameng. Haholo-holo ho polytype ea 4H-SiC, sebopeho sa eona sa kristale se fana ka ts'ebetso e ntle ea elektroniki, e leng se etsang hore e be thepa e khethiloeng bakeng sa lisebelisoa tsa elektroniki tsa motlakase.

Wafer ea Silicon Carbide ea lisenthimithara tse 3 ke wafer e nang le naetrojene e nang le conductivity ea mofuta oa N. Mokhoa ona oa doping o fa wafer khatello e phahameng ea lielektrone, ka hona o ntlafatsa ts'ebetso ea conductive ea sesebelisoa. Boholo ba wafer, bo bolelele ba lisenthimithara tse 3 (bophara ba 76.2 mm), ke tekanyo e sebelisoang haholo indastering ea semiconductor, e loketseng lits'ebetso tse fapaneng tsa tlhahiso.

Wafer ea Silicon Carbide 4H-N ea lisenthimithara tse 3 e hlahisoa ho sebelisoa mokhoa oa Physical Vapor Transport (PVT). Ts'ebetso ena e kenyelletsa ho fetola phofo ea SiC hore e be likristale tse le 'ngoe mochesong o phahameng, ho netefatsa boleng ba kristale le ho tšoana ha wafer. Ho feta moo, botenya ba wafer hangata bo ka ba 0.35 mm, 'me bokaholimo ba eona bo pentiloe ka mahlakoreng a mabeli ho fihlela boemo bo phahameng haholo ba ho ba bataletse le ho boreleli, e leng habohlokoa bakeng sa lits'ebetso tse latelang tsa tlhahiso ea semiconductor.

Mefuta e fapaneng ea ts'ebeliso ea wafer ea Silicon Carbide 4H-N ea lisenthimithara tse 3 e pharaletse, ho kenyeletsoa lisebelisoa tsa elektroniki tse matla haholo, li-sensor tsa mocheso o phahameng, lisebelisoa tsa RF, le lisebelisoa tsa optoelectronic. Ts'ebetso ea eona e ntle le ts'epo li nolofalletsa lisebelisoa tsena ho sebetsa ka botsitso tlas'a maemo a feteletseng, ho fihlela tlhoko ea lisebelisoa tsa semiconductor tse sebetsang hantle indastering ea sejoale-joale ea elektroniki.

Re ka fana ka substrate ea 4H-N ea 3inch SiC, mefuta e fapaneng ea li-wafer tsa setoko sa substrate. Re ka boela ra hlophisa mokhoa oa ho iketsetsa ho latela litlhoko tsa hau. Rea u amohela potso!