4 inch SiC Wafers 6H Semi-Insulating SiC Substrates tsa mantlha, lipatlisiso, le boemo ba dummy

4 inch SiC Wafers 6H Semi-Insulating SiC Substrates prime, research, and dummy grade Setšoantšo se bontšitsoeng

Tlhaloso e Khutšoanyane:

Semi-insulated silicon carbide substrate e thehoa ka ho seha, ho sila, ho bentša, ho hloekisa le theknoloji e 'ngoe ea ho sebetsa ka mor'a ho hōla ha kristale ea silicon carbide. Lera kapa multilayer kristale layer e holisoa holim'a substrate e fihlelang litlhoko tsa boleng e le epitaxy, ebe sesebelisoa sa microwave RF se etsoa ka ho kopanya moralo oa potoloho le ho paka. E fumaneha joalo ka indasteri ea 2inch 3inch 4inch 6inch 8 inch, lipatlisiso le liteko tsa grade semi-insulated silicon carbide single crystal substrates.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tlhaloso ea Sehlahisoa

Kereiti			Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)			Mophato o Tlwaelehileng wa Tlhahiso(P Grade)		Sehlopha sa Dummy (D Grade)
Diameter			99.5 limilimithara ~ 100.0 limilimithara
	4H-SI		500 μm±20 μm			500 μm±25 μm
Wafer Orientation			Off axis : 4.0° ho ea<1120 > ±0.5° bakeng sa 4H-N, On axis : <0001>±0.5° bakeng sa 4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Maemo a mantlha a Flat		{10-10} ±5.0°
Bolelele ba Phatlalatso ba Pele		32.5 mm±2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli		18.0 limilimithara±2.0 limilimithara
Boemo ba Bobeli ba Flat		Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat ± 5.0 °
Kenyelletso ea Edge		3 limilimithara
LTV/TTV/Bow /Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Boqhobane			C sefahleho				Sepolishe		Ra≤1 nm
			Ke sefahleho	CMP	Ra≤0.2 nm					Ra≤0.5 nm
Edge Cracks By High Intensity Leseli		Ha ho letho						Bolelele bo akaretsang ≤ 10 mm, e le 'ngoe bolelele≤2 mm
Hex Plates By High Intensity Light		Kakaretso ≤0.05%						Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng		Ha ho letho						Kakaretso≤3%
Likakaretso tsa Carbon tse bonoang		Kakaretso ≤0.05%						Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light		Ha ho letho						Cumulative length≤1＊wafer bophara
Edge Chips Phahameng ka ho Matla Leseli		Ha ho e lumelletsoeng ≥0.2 mm bophara le botebo						5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng		Ha ho letho
Sephutheloana		Multi-wafer Cassette Kapa Single Wafer Container