4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Sehlopha sa Lipatlisiso

4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Sehlopha sa Patlisiso se Featured Image

Tlhaloso e Khutšoanyane:

4-inch silicon carbide single crystal substrate wafer ke sesebelisoa se sebetsang hantle se nang le thepa e ikhethang ea 'mele le ea lik'hemik'hale. E entsoe ka thepa e phahameng ea silicon carbide single crystal e nang le conductivity e ntle ea mocheso, botsitso ba mochini le ho hanyetsa mocheso o phahameng. Ka lebaka la ts'ebetso ea eona ea ho lokisa ka mokhoa o nepahetseng le lisebelisoa tsa boleng bo phahameng, chip ena ke e 'ngoe ea lisebelisoa tse ratoang bakeng sa ho lokisoa ha lisebelisoa tsa elektronike tse sebetsang hantle libakeng tse ngata.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Lisebelisoa

4-inch silicon carbide single crystal substrate wafers e bapala karolo ea bohlokoa mafapheng a mangata. Ntlha ea pele, e sebelisoa haholo indastering ea semiconductor ha ho lokisoa lisebelisoa tsa elektronike tse matla tse kang li-transistors tsa matla, li-circuits tse kopantsoeng le li-module tsa matla. Ts'ebetso ea eona e phahameng ea mocheso le ho hanyetsa mocheso o phahameng ho etsa hore e khone ho qhala mocheso hamolemo le ho fana ka katleho e kholo ea ho sebetsa le ho tšepahala. Taba ea bobeli, li-wafers tsa silicon carbide li boetse li sebelisoa lefapheng la lipatlisiso ho etsa lipatlisiso ka lisebelisoa le lisebelisoa tse ncha. Ho feta moo, li-wafers tsa silicon carbide li boetse li sebelisoa haholo ho optoelectronics, joalo ka ho etsa li-leds le laser diode.

Litlhaloso tsa 4inch SiC wafer

4-inch silicon carbide single crystal substrate wafer bophara ba 4 inches (hoo e ka bang 101.6mm), e qeta ho fihla ho Ra <0.5 nm, botenya ba 600±25 μm. The conductivity ea wafer ke mofuta oa N kapa mofuta oa P 'me o ka etsoa ho latela litlhoko tsa bareki. Ho phaella moo, chip e boetse e na le botsitso bo babatsehang ba mochine, e ka mamella tekanyo e itseng ea khatello le ho thothomela.

inch silicon carbide single crystal substrate wafer ke thepa e sebetsang hantle haholo e sebelisoang haholo masimong a semiconductor, lipatlisiso le optoelectronics. E na le conductivity e babatsehang ea mocheso, botsitso ba mechine le ho hanyetsa mocheso o phahameng, o loketseng ho lokisetsa lisebelisoa tsa elektronike tse matla le ho etsa lipatlisiso tsa thepa e ncha. Re fana ka mefuta e fapaneng ea litlhaloso le likhetho tsa ho itlhophisa ho fihlela litlhoko tse fapaneng tsa bareki. Ka kopo ela hloko sebaka sa rona se ikemetseng ho ithuta haholoanyane ka tlhaiso-leseling ea sehlahisoa sa li-wafers tsa silicon carbide.

Mesebetsi ea bohlokoa: Li-wafers tsa silicon carbide, li-wafers tsa silicon carbide single crystal substrate, li-inch tse 4, conductivity ea mocheso, botsitso ba mochine, ho hanyetsa mocheso o phahameng, li-transistors tsa matla, li-circuits tse kopantsoeng, li-module tsa matla, li-leds, laser diode, holimo holimo, conductivity, likhetho tsa tloaelo.