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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa Patlisiso 500um botenya Featured Image
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya
  • 4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya

Tlhaloso e Khutšoanyane:

Li-wafers tsa silicon carbide li sebelisoa lisebelisoa tsa elektroniki tse kang diode tsa motlakase, MOSFET, lisebelisoa tsa microwave tse matla haholo, le li-transistors tsa RF, tse nolofalletsang phetolo ea matla le taolo ea matla. Li-wafers tsa SiC le li-substrates li boetse li sebelisoa ho lisebelisoa tsa elektroniki tsa likoloi, litsamaiso tsa sefofane, le mahlale a matla a ka nchafatsoang.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

U Khetha Liphaephe tsa Silicon Carbide & Substrates tsa SiC Joang?

Ha u khetha li-wafers tsa silicon carbide (SiC) le li-substrates, ho na le lintlha tse 'maloa tse lokelang ho nahanoa. Lintlha tse ling tsa bohlokoa ke tsena:

Mofuta oa Boitsebiso: Etsa qeto ea mofuta oa lisebelisoa tsa SiC tse lumellanang le kopo ea hau, tse kang 4H-SiC kapa 6H-SiC. Sebopeho sa kristale se sebelisoang ka ho fetisisa ke 4H-SiC.

Mofuta oa Doping: Etsa qeto ea hore na u hloka substrate ea SiC e nang le doped kapa e sa koaloang. Mefuta e tloaelehileng ea li-doping ke mofuta oa N (n-doped) kapa P-type (p-doped), ho itšetlehile ka litlhoko tsa hau tse khethehileng.

Boleng ba Crystal: Lekola boleng ba kristale ba li-wafers tsa SiC kapa substrates. Boleng bo lakatsehang bo khethoa ke liparamente tse kang palo ea likoli, sebopeho sa crystallographic, le bokaholimo ba bokaholimo.

Wafer Diameter: Khetha boholo bo nepahetseng ba wafer ho latela ts'ebeliso ea hau. Mefuta e tloaelehileng e kenyelletsa 2 inches, 3 inches, 4 inches, le 6 inches. Ha bophara ba bophara bo le boholo, u ka fumana chai e ngata ka sephaphatha.

Botenya: Nahana ka botenya bo lakatsehang ba li-wafers tsa SiC kapa substrates. Likhetho tse tloaelehileng tsa botenya li tloha ho li-micrometer tse seng kae ho isa ho li-micrometer tse makholo a 'maloa.

Mokhoa: Etsa qeto ea sebopeho sa crystallographic se tsamaellanang le litlhoko tsa kopo ea hau. Mekhoa e tloaelehileng e kenyelletsa (0001) bakeng sa 4H-SiC le (0001) kapa (0001̅) bakeng sa 6H-SiC.

Qetello ea Bokaholimo: Lekola pheletso ea liphaephe tsa SiC kapa li-substrates. Bokaholimo bo lokela ho ba boreleli, bo bentšitsoe, 'me bo se na mengoapo kapa litšila.

Botumo ba Bafani: Khetha morekisi ea tšepahalang ea nang le boiphihlelo bo bongata ba ho hlahisa liphaephe tsa boleng bo holimo tsa SiC le li-substrate. Nahana ka lintlha tse kang bokhoni ba tlhahiso, taolo ea boleng, le maikutlo a bareki.

Litšenyehelo: Ak'u nahane ka litlamorao tsa litšenyehelo, ho kenyeletsoa le theko ka sekoahelo se seng le se seng kapa karoloana le litjeho life kapa life tse ling tsa ho itlhophisa.

Ke habohlokoa ho hlahloba lintlha tsena ka hloko le ho buisana le litsebi tsa indasteri kapa bafani ba thepa ho netefatsa hore li-wafers le li-substrates tsa SiC tse khethiloeng li finyella litlhoko tsa hau tse khethehileng tsa kopo.

Setšoantšo se qaqileng

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research sehlopheng sa botenya ba 500um (1)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research sehlopheng sa botenya ba 500um (2)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research sehlopheng sa botenya ba 500um (3)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research sehlopheng sa botenya ba 500um (4)
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