4H-semi HPSI 2inch SiC substrate wafer Production Mophato wa Patlisiso ya Dummy

4H-semi HPSI 2inch SiC substrate wafer Production Dummy Research grade Featured Image

Tlhaloso e Khutšoanyane:

2inch silicon carbide single crystal substrate wafer ke sesebelisoa se sebetsang hantle se nang le thepa e ikhethang ea 'mele le ea lik'hemik'hale. E entsoe ka thepa e phahameng ea silicon carbide single crystal e nang le conductivity e ntle ea mocheso, botsitso ba mochini le ho hanyetsa mocheso o phahameng. Ka lebaka la ts'ebetso ea eona ea ho lokisa ka mokhoa o nepahetseng le lisebelisoa tsa boleng bo phahameng, chip ena ke e 'ngoe ea lisebelisoa tse ratoang bakeng sa ho lokisoa ha lisebelisoa tsa elektronike tse sebetsang hantle libakeng tse ngata.

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Semi-insulating silicon carbide substrate SiC wafers

Silicon carbide substrate e arotsoe haholo ka mofuta oa conductive le semi-insulating, conductive silicon carbide substrate ho substrate ea mofuta oa n e sebelisoa haholo bakeng sa epitaxial GaN-based LED le lisebelisoa tse ling tsa optoelectronic, lisebelisoa tsa motlakase tsa SiC-based, joalo-joalo, le semi- Insulating SiC silicon carbide substrate e sebelisoa haholo-holo bakeng sa tlhahiso ea epitaxial ea lisebelisoa tsa maqhubu a radio a matla a phahameng a GaN. Ho phaella moo, ho hloeka ha semi-insulation HPSI le SI semi-insulation ho fapane, ho hloeka ha semi-insulation carrier carrier concentrations ea 3.5 * 1013 ~ 8 * 1015 / cm3 mefuta e mengata, e nang le motsamao o phahameng oa elektronike; Semi-insulation ke thepa e hanyetsanang haholo, resistivity e phahame haholo, hangata e sebelisoa bakeng sa substrates ea sesebelisoa sa microwave, e sa sebetseng.

Semi-insulating Silicon Carbide substrate sheet SiC sephaphatha

Sebopeho sa kristale ea SiC se etsa qeto ea 'mele ea eona, e amanang le Si le GaAs, SiC e na le thepa ea' mele; bophara ba sehlopha se hanetsoeng bo boholo, bo haufi le makhetlo a 3 a Si, ho etsa bonnete ba hore sesebelisoa se sebetsa ka mocheso o phahameng tlas'a ho tšepahala ha nako e telele; ho senyeha tšimong matla a phahameng, ke 1O makhetlo a Si, ho etsa bonnete ba hore sesebelisoa gagamalo bokgoni, ntlafatsa sesebediswa gagamalo boleng; saturation elektronike sekhahla se seholo, ke makhetlo a 2 a Si, ho eketsa maqhubu a sesebelisoa le matla a matla; Thermal conductivity e phahame, ho feta Si, conductivity ea mocheso e phahameng, mocheso oa mocheso o phahame, mocheso oa mocheso o phahame, o phahame ho feta Si, mocheso oa mocheso o phahame, mocheso oa mocheso o phahame. Boima bo phahameng ba mocheso, ho feta makhetlo a 3 ho feta Si, ho eketsa matla a ho senya mocheso oa sesebelisoa le ho hlokomela miniaturization ea sesebelisoa.