Sehlahisoa sa 4H-semi HPSI 2inch SiC substrate wafer sa tlhahiso ya Dummy Research grade
Li-wafer tsa SiC tse sireletsang mocheso ka semi-insulation tsa silicon carbide substrate
Karoloana ea silicon carbide e arotsoe haholo-holo ka mofuta oa conductive le semi-insulating, karoloana ea silicon carbide e tsamaisang motlakase ho ea ho n-type e sebelisoa haholo-holo bakeng sa epitaxial GaN-based LED le lisebelisoa tse ling tsa optoelectronic, lisebelisoa tsa elektroniki tse sebelisang matla a motlakase tse thehiloeng ho SiC, jj., 'me karoloana ea silicon carbide ea SiC e thibelang mocheso e sebelisoa haholo-holo bakeng sa tlhahiso ea epitaxial ea lisebelisoa tsa maqhubu a radio a matla a phahameng a GaN. Ho phaella moo, semi-insulation ea HPSI le SI semi-insulation e fapane, semi-insulation carrier ea semi-insulation e phahameng e fapana ka 3.5 * 1013 ~ 8 * 1015/cm3, e nang le motsamao o phahameng oa elektrone; semi-insulation ke thepa e hanyetsanang haholo, resistivity e phahame haholo, hangata e sebelisoa bakeng sa substrates tsa lisebelisoa tsa microwave, e seng e tsamaisang motlakase.
Semi-insulating Silicon Carbide substrate sheet SiC wafer
Sebopeho sa kristale sa SiC se etsa qeto ea 'mele oa sona, ha se bapisoa le Si le GaAs, SiC e na le litšobotsi tsa 'mele; bophara ba lebanta le thibetsoeng bo boholo, bo haufi le makhetlo a 3 a Si, ho netefatsa hore sesebelisoa se sebetsa mochesong o phahameng tlas'a ts'epo ea nako e telele; matla a tšimo a ho senyeha a phahame, ke makhetlo a 1O a Si, ho netefatsa hore bokhoni ba motlakase oa sesebelisoa, bo ntlafatsa boleng ba motlakase oa sesebelisoa; sekhahla sa elektrone ea saturation se seholo, ke makhetlo a 2 a Si, ho eketsa maqhubu le bongata ba matla a sesebelisoa; conductivity ea mocheso e phahame, ho feta Si, conductivity ea mocheso e phahame, conductivity ea mocheso e phahame, conductivity ea mocheso e phahame, conductivity ea mocheso e phahame, ho feta Si, conductivity ea mocheso e phahame, conductivity ea mocheso e phahame. Conductivity e phahameng ea mocheso, ho feta makhetlo a 3 a Si, ho eketsa bokhoni ba ho qhala mocheso ba sesebelisoa le ho hlokomela miniaturization ea sesebelisoa.
Setšoantšo se qaqileng
