4H/6H-P 6inch SiC wafer Zero MPD kereiti ya Tlhahiso Kereiti ya Dummy

4H/6H-P 6inch SiC wafer Zero MPD grade Production Kereiti ya Dummy Kereite Featured Image

Tlhaloso e Khutšoanyane:

Mofuta oa 4H / 6H-P oa mofuta oa 6-inch SiC wafer ke thepa ea semiconductor e sebelisoang ho etsa lisebelisoa tsa elektronike, e tsejoang ka mokhoa o motle oa ho tsamaisa mocheso, matla a phahameng a ho senya, le ho hanyetsa mocheso o phahameng le ho bola. Sehlopha sa tlhahiso-pele le Zero MPD (Micro Pipe Defect) li netefatsa ho tšepahala le botsitso ho lisebelisoa tsa elektronike tse sebetsang hantle. Li-wafers tsa boemo ba tlhahiso li sebelisetsoa ho etsa lisebelisoa tse kholo tse nang le taolo e thata ea boleng, ha li-wafers tsa boemo ba dummy li sebelisoa haholo bakeng sa ho lokisa liphoso le tlhahlobo ea lisebelisoa. Thepa e hlahelletseng ea SiC e etsa hore e sebelisoe haholo ho lisebelisoa tsa elektronike tse nang le mocheso o phahameng, matla a phahameng le a maqhubu a phahameng, joalo ka lisebelisoa tsa motlakase le lisebelisoa tsa RF.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

4H/6H-P Mofuta oa SiC Composite Substrates Tafole e tloaelehileng ea parameter

6 inch bophara ba Silicon Carbide (SiC) Substrate Tlhaloso

Kereiti			Zero MPD TlhahisoKereiti (Z Kereiti)	Tlhahiso e TloaelehilengKereiti (P Kereiti)	Sehlopha sa Dummy (D Kereiti)
Diameter			145.5 limilimithara ~ 150.0 limilimithara
Botenya			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0° -4.0° ho leba [1120] ± 0.5° bakeng sa 4H/6H-P, Ho axis:〈111〉± 0.5° bakeng sa 3C-N
Boima ba Micropipe			0cm-2
Ho hanyetsa	mofuta oa 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mofuta 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Maemo a Motheo a Flat		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Bolelele ba Phatlalatso ba Pele			32.5 limilimithara ± 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli			18.0 limilimithara ± 2.0 limilimithara
Boemo ba Bobeli ba Flat			Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat ± 5.0°
Kenyelletso ea Edge			3 limilimithara		6 limilimithara
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Boqhobane			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Leseli			Ha ho letho		Bolelele bo akaretsang ≤ 10 mm, bolelele bo le bong≤2 mm
Hex Plates By High Intensity Light			Kakaretso ≤0.05%		Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng			Ha ho letho		Kakaretso≤3%
Likakaretso tsa Carbon tse bonoang			Kakaretso ≤0.05%		Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light			Ha ho letho		Bolelele bo kopaneng≤1× bophara ba wafer
Edge Chips Phahameng ka ho Matla Leseli			Ha ho e lumelletsoeng ≥0.2mm bophara le botebo		5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng			Ha ho letho
Sephutheloana			Multi-wafer Cassette kapa Single Wafer Container

Lintlha:

※ Meeli ea bofokoli e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. # Mengoako e lokela ho hlahlojoa ho Si face o

Mofuta oa 4H/6H-P oa 6-inch SiC wafer e nang le kereiti ea Zero MPD le boemo ba tlhahiso kapa dummy e sebelisoa haholo lits'ebetsong tse tsoetseng pele tsa elektroniki. Ts'ebetso ea eona e ntle ea mocheso, matla a phahameng a ho senyeha, le ho hanyetsa maemo a thata ho etsa hore e be e loketseng bakeng sa lisebelisoa tsa motlakase, tse kang li-switches tse phahameng le li-inverters. Mophato oa Zero MPD o netefatsa bofokoli bo fokolang, bo bohlokoa bakeng sa lisebelisoa tse tšepahalang haholo. Li-wafer tsa boemo ba tlhahiso li sebelisoa tlhahisong e kholo ea lisebelisoa tsa motlakase le lits'ebetso tsa RF, moo ts'ebetso le ho nepahala ho leng bohlokoa. Ka lehlakoreng le leng, li-wafers tsa boemo ba Dummy li sebelisetsoa ho lekanya tšebetso, tlhahlobo ea lisebelisoa, le prototyping, e thusang taolo e tsitsitseng ea boleng libakeng tsa tlhahiso ea semiconductor.

Melemo ea N-mofuta oa SiC composite substrates e kenyelletsa

High Thermal Conductivity: Sephaphatha sa 4H / 6H-P SiC se senya mocheso ka katleho, se etsa hore se tšoanelehe bakeng sa lisebelisoa tsa elektronike tse nang le mocheso o phahameng le o matla.
Motlakase o phahameng oa ho senya: Bokhoni ba eona ba ho sebetsana le li-voltage tse phahameng ntle le ho hloleha bo e etsa hore e be e loketseng bakeng sa lisebelisoa tsa elektroniki tsa motlakase le lits'ebetso tsa switching tse matla haholo.
Zero MPD (Micro Pipe Defect) Kereiti: Tekanyo e fokolang ea sekoli e netefatsa ts'epo le ts'ebetso e phahameng, e bohlokoa bakeng sa lisebelisoa tsa elektroniki tse batloang.
Tlhahiso-Kereiti ea Tlhahiso ea Boipheliso: E loketse tlhahiso e kholo ea lisebelisoa tsa semiconductor tse sebetsang hantle tse nang le litekanyetso tse thata tsa boleng.
Kereiti ea Dummy bakeng sa Teko le Teko: E nolofalletsa ts'ebetso ea ts'ebetso, tlhahlobo ea lisebelisoa, le prototyping ntle le ho sebelisa li-wafers tsa boemo bo holimo tsa tlhahiso.

Ka kakaretso, li-wafers tsa 4H/6H-P 6-inch SiC tse nang le mophato oa Zero MPD, boemo ba tlhahiso, le boemo ba dummy li fana ka melemo e mengata bakeng sa nts'etsopele ea lisebelisoa tsa elektroniki tse sebetsang hantle haholo. Li-wafers tsena li molemo haholo lits'ebetsong tse hlokang ts'ebetso ea mocheso o phahameng, matla a phahameng a matla, le phetolo ea matla e sebetsang hantle. Mophato oa Zero MPD o netefatsa bofokoli bo fokolang bakeng sa ts'ebetso e ts'eptjoang le e tsitsitseng ea sesebelisoa, athe liphaephe tsa boemo ba tlhahiso li ts'ehetsa tlhahiso e kholo ka taolo e tiileng ea boleng. Li-wafer tsa boemo ba li-dummy li fana ka tharollo e theko e tlaase bakeng sa ts'ebetso ea ts'ebetso le ho lekanya lisebelisoa, e leng se etsang hore e be tsa bohlokoa haholo bakeng sa ho etsoa ha semiconductor e nepahetseng haholo.