4inch 6inch 8inch SiC Sebōpi sa Khōlo ea Crystal bakeng sa Ts'ebetso ea CVD

Tlhaloso e Khutšoanyane:

XKH's SiC Crystal Growth Furnace CVD Chemical Vapor Deposition system e sebelisa theknoloji e etellang pele ea lefats'e ea ho beha mouoane oa lik'hemik'hale, e etselitsoeng ka ho khetheha kholo ea boleng bo holimo ea SiC e le 'ngoe ea kristale. Ka taolo e nepahetseng ea likarolo tsa ts'ebetso ho kenyelletsa phallo ea khase, mocheso le khatello, e nolofalletsa kholo ea kristale ea SiC ho li-substrates tsa 4-8 inch. Sistimi ena ea CVD e ka hlahisa mefuta e fapaneng ea kristale ea SiC ho kenyelletsa mofuta oa 4H / 6H-N le mofuta oa insulating oa 4H / 6H-SEMI, o fana ka tharollo e felletseng ho tloha lisebelisoa ho isa lits'ebetsong. Sistimi e ts'ehetsa litlhoko tsa kholo bakeng sa li-wafers tsa 2-12 inch, e etsa hore e tšoanelehe haholo bakeng sa tlhahiso e kholo ea lisebelisoa tsa elektroniki tsa matla le lisebelisoa tsa RF.


Likaroloana

Molao-motheo oa ho Sebetsa

Molao-motheo oa motheo oa tsamaiso ea rona ea CVD e kenyelletsa ho senyeha ha mocheso oa silicon-containing (mohlala, SiH4) le carbon-containing (mohlala, C3H8) likhase tse tlang pele ho mocheso o phahameng (ka tloaelo 1500-2000 ° C), ho kenya likristale tse le 'ngoe tsa SiC ho substrates ka lik'hemik'hale tsa khase ea khase. Theknoloji ena e loketse ka ho khetheha bakeng sa ho hlahisa bohloeki bo phahameng (> 99.9995%) 4H / 6H-SiC e le 'ngoe ea likristale tse nang le bokooa bo tlaase (<1000/cm²), e finyellang litlhoko tse thata tsa lisebelisoa tsa motlakase oa motlakase le lisebelisoa tsa RF. Ka taolo e nepahetseng ea sebopeho sa khase, sekhahla sa phallo le sekhahla sa mocheso, sistimi e etsa hore ho be le taolo e nepahetseng ea mofuta oa kristale conductivity (mofuta oa N / P) le resistivity.

Mefuta ea Sisteme le Liparamente tsa Tekheniki

Mofuta oa Sistimi Mocheso Range Likarolo tsa Bohlokoa Lisebelisoa
CVD e phahameng ea mocheso 1500-2300°C Ho futhumala ha graphite, ± 5°C mocheso o ts'oanang Khōlo ea kristale ea Bulk SiC
Hot-Filament CVD 800-1400°C Ho futhumala ha tungsten filament, 10-50μm/h deposition rate Epitaxy e teteaneng ea SiC
VPE CVD 1200-1800°C Taolo ea mocheso oa libaka tse ngata,> 80% ea tšebeliso ea khase Tlhahiso e kholo ea epi-wafer
PECVD 400-800°C Plasma e matlafalitsoe, sekhahla sa ho beoa ha 1-10μm/h Lifilimi tse tšesaane tsa SiC tsa mocheso o tlase

Litšobotsi tsa Bohlokoa tsa Theknoloji

1. Sistimi e tsoetseng pele ea Taolo ea Mocheso
Sebōpi se na le sistimi e futhumatsang ea libaka tse ngata e khonang ho boloka mocheso o fihlang ho 2300 ° C ka ho ts'oana ha ± 1 ° C ho pholletsa le phaposi eohle ea kholo. Taolo ena e nepahetseng ea mocheso e finyelloa ka:
Libaka tse futhumatsang tse 12 tse laoloang ka boikemelo.
Tlhokomelo e sa hlokahaleng ea thermocouple (Mofuta oa C W-Re).
Li-algorithms tsa phetoho ea boemo ba mocheso oa nako ea 'nete.
Mabota a kamore a pholileng ka metsi bakeng sa taolo ea mocheso oa mocheso.

2. Theknoloji ea Phano ea Khase le Ho Kopanya
Sistimi ea rona ea kabo ea khase e netefatsa ho tsoakoa ka mokhoa o nepahetseng oa selelekela le phepelo e tšoanang:
Balaoli ba phallo ea bongata ka ± 0.05sccm ho nepahala.
Multi-point gase ente e mengata.
Tlhokomelo ea sebopeho sa khase e kahare ho situ (FTIR spectroscopy).
Matšeliso a phallang ka boiketsetso nakong ea lipotoloho tsa kholo.

3. Ntlafatso ea Boleng ba Crystal
Sistimi e kenyelletsa mekhoa e mengata e mecha ea ho ntlafatsa boleng ba kristale:
Sets'oants'o sa substrate se pota-potileng (0-100rpm e ka khonehang).
Theknoloji e tsoetseng pele ea taolo ea moeli oa moeli.
Sistimi ea ho beha leihlo sekoli ka har'a situ (ho hasana ha laser ea UV).
Matšeliso a khatello ea maikutlo ka ho iketsa nakong ea kholo.

4. Tshebetso ea Boiketsetso le Taolo
Phethahatso e phethahetseng ea recipe.
AI ea kholo ea kholo ea nako ea nnete.
Tlhokomelo e hole le tlhahlobo ea mafu.
1000+ ho rengoa ha data ea parameter (e bolokiloeng lilemo tse 5).

5. Likarolo tsa Tšireletseho le Tšepahalang
Ts'ireletso e sa hlokeng makhetlo a mararo ho feta mocheso.
Mokhoa o ikemetseng oa ho hloekisa maemo a tšohanyetso.
Moralo oa sebopeho se lekantsoeng ka litšisinyeho tsa lefatše.
98.5% tiisetso ea nako ea ho qetela.

6. Scalable Architecture
Moralo oa modular o lumella ho ntlafatsa bokhoni.
E lumellana le boholo ba 100mm ho isa ho 200mm.
E ts'ehetsa litlhophiso tse otlolohileng le tse tšekaletseng.
Likarolo tsa phetoho e potlakileng bakeng sa tlhokomelo.

7. Matla a Matla
30% ea tšebeliso e tlase ea matla ho feta litsamaiso tse bapisoang.
Sistimi ea ho khutlisa mocheso e hapa 60% ea mocheso oa litšila.
Mokhoa o ntlafalitsoeng oa tšebeliso ea khase.
Litlhoko tsa setsi tse lumellanang le LEED.

8. Lintho Tse Fetohang
E holisa li-polytypes tsohle tse kholo tsa SiC (4H, 6H, 3C).
E ts'ehetsa mefuta e fapaneng ea conductive le semi-insulating.
E fana ka mefuta e fapaneng ea merero ea doping (N-mofuta, P-mofuta).
E lumellana le li-precursor tse ling (mohlala, TMS, TES).

9. Ts'ebetso ea Vacuum System
Khatello ea motheo: <1×10⁻⁶ Torr
Sekhahla sa ho lutla: <1×10⁻⁹ Torr·L/sec
Lebelo la ho pompa: 5000L/s (bakeng sa SiH₄)

Taolo ea khatello e ikemetseng nakong ea lipotoloho tsa kholo
Tlhaloso ena e felletseng ea tekheniki e bonts'a bokhoni ba sistimi ea rona ea ho hlahisa likristale tsa SiC tsa boemo ba lipatlisiso le boleng ba tlhahiso tse nang le botsitso bo etelletseng pele indastering le chai. Motsoako oa taolo e nepahetseng, tlhahlobo e tsoetseng pele, le boenjiniere bo matla bo etsa hore sistimi ena ea CVD e be khetho e nepahetseng bakeng sa lisebelisoa tsa R&D le tsa tlhahiso ea molumo ho lisebelisoa tsa motlakase, lisebelisoa tsa RF, le lits'ebetso tse ling tse tsoetseng pele tsa semiconductor.

Melemo ea Bohlokoa

1. Khōlo ea Crystal ea Boleng bo Phahameng
• Bophahamo bo tlase joalo ka <1000/cm² (4H-SiC)
• Doping uniform <5% (6-inch wafers)
• Crystal pureity >99.9995%

2. Bokhoni ba Tlhahiso e kholo ea boholo
• E ts'ehetsa ho fihla ho 8-inch wafer kgolo
• Ho tšoana ha bophara >99%
• Ho fapana ha botenya <±2%

3. Taolo e nepahetseng ea Ts'ebetso
• Ho nepahala ha taolo ea mocheso ±1°C
• Ho nepahala ha taolo ea khase ± 0.1sccm
• Ho nepahala ha taolo ya kgatello ±0.1Torr

4. Matla a Matla
• 30% e baballang matla ho feta mekhoa e tloaelehileng
• Sekhahla sa kholo ho fihla ho 50-200μm/h
• Nako ea ho qetela ea lisebelisoa >95%

Lisebelisoa tsa Bohlokoa

1. Lisebelisoa tsa Elektronike tsa Matla
6-inch 4H-SiC substrates bakeng sa 1200V+ MOSFETs/diode, ho fokotsa tahlehelo ea switching ka 50%.

2. Puisano ea 5G
Semi-insulating SiC substrates (resistivity>10⁸Ω·cm) bakeng sa li-PA tsa setsi, ka tahlehelo ea ho kenya <0.3dB ho> 10GHz.

3. Likoloi tse Ncha tsa Matla
Li-module tsa motlakase tsa SiC tsa boemo ba likoloi li eketsa mefuta ea EV ka 5-8% le ho fokotsa nako ea ho tjhaja ka 30%.

4. Li-inverters tsa PV
Li-substrates tse nang le bokooa bo tlase li eketsa katleho ea phetoho ho feta 99% ha li ntse li fokotsa boholo ba sistimi ka 40%.

Litšebeletso tsa XKH

1. Litšebeletso tsa Customization
Sistimi e etselitsoeng 4-8 inch CVD.
E tšehetsa kholo ea mofuta oa 4H / 6H-N, mofuta oa insulating oa 4H / 6H-SEMI, joalo-joalo.

2. Tšehetso ea Theknoloji
Koetliso e felletseng mabapi le ts'ebetso le ntlafatso ea ts'ebetso.
24/7 karabelo ea tekheniki.

3. Turnkey Solutions
Litšebeletso tsa ho qetela ho tloha ho ts'ebetso ho isa ts'ebetsong ea ho netefatsa.

4. Phepelo ea Lintho
2-12 inch SiC substrates/epi-wafers e fumaneha.
E tšehetsa 4H/6H/3C polytypes.

Likhetho tse ka sehloohong li kenyelletsa:
Ho fihla ho 8-inch ea kholo ea kristale.
20% sekhahla sa kholo e potlakileng ho feta karolelano ea indasteri.
98% ho tšepahala ha tsamaiso.
Full bohlale taolo tsamaiso sephutheloana.

SiC ingot kgolo sebōpi 4
SiC ingot kgolo sebōpi 5

  • E fetileng:
  • E 'ngoe:

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