Wafer ea 4inch SiC Epi bakeng sa MOS kapa SBD

Epitaxy e bolela kgolo ya lera la boleng bo hodimo la thepa ya kristale e le nngwe hodima bokahodimo ba substrate ya silicon carbide. Har'a tsona, kgolo ya lera la gallium nitride epitaxial hodima substrate ya silicon carbide e thibelang mocheso e bitswa heterogeneous epitaxy; kgolo ya lera la silicon carbide epitaxial hodima substrate ya silicon carbide e tsamaisang mocheso e bitswa homogeneous epitaxy.

Epitaxial e lumellana le litlhoko tsa moralo oa sesebelisoa sa kholo ea lera le ka sehloohong la ts'ebetso, haholo-holo e etsa qeto ea ts'ebetso ea chip le sesebelisoa, litšenyehelo tsa 23%. Mekhoa e meholo ea SiC thin film epitaxy mohatong ona e kenyelletsa: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), le pulsed laser deposition le sublimation (PLD).

Epitaxy ke sehokelo sa bohlokoa haholo indastering yohle. Ka ho holisa mekhahlelo ea epitaxial ea GaN holim'a li-substrate tsa silicon carbide tse thibelang mocheso ka semi-insulating, li-wafer tsa GaN epitaxial tse thehiloeng ho silicon carbide lia hlahisoa, tse ka etsoang lisebelisoa tsa GaN RF tse kang li-transistors tse tsamaeang ka li-electron tse phahameng (HEMTs);

Ka ho holisa lera la epitaxial la silicon carbide holim'a substrate e tsamaisang motlakase ho fumana wafer ea epitaxial ea silicon carbide, le lera la epitaxial holim'a tlhahiso ea diode tsa Schottky, li-transistors tsa halofo ea tšimo ea khauta-oksijene, li-transistors tsa bipolar tse nang le insulated gate le lisebelisoa tse ling tsa motlakase, kahoo boleng ba epitaxial ts'ebetsong ea sesebelisoa bo na le tšusumetso e kholo haholo nts'etsopele ea indasteri le eona e bapala karolo ea bohlokoa haholo.