4inch SiC Epi sephaphatha bakeng sa MOS kapa SBD

Epitaxy e bua ka kholo ea lera la boleng bo holimo ba kristale e le 'ngoe holim'a karoloana ea silicon carbide. Har'a tsona, ho hōla ha gallium nitride epitaxial layer holim'a semi-insulating silicon carbide substrate ho bitsoa heterogeneous epitaxy; kholo ea silicon carbide epitaxial layer holim'a karoloana ea conductive silicon carbide e bitsoa homogeneous epitaxy.

Epitaxial e lumellana le litlhoko tsa moralo oa lisebelisoa tsa kholo ea lera le ka sehloohong la ts'ebetso, haholo-holo e khethollang ts'ebetso ea chip le sesebelisoa, litšenyehelo tsa 23%. Mekhoa e ka sehloohong ea SiC tšesaane filimi epitaxy mothating ona e kenyeletsa: lik'hemik'hale mouoane deposition (CVD), molecular beam epitaxy (MBE), mokelikeli phase epitaxy (LPE), le pulsed laser deposition le sublimation (PLD).

Epitaxy ke sehokelo sa bohlokoa haholo indastering eohle. Ka ho holisa GaN epitaxial layers holim'a li-semi-insulating silicon carbide substrates, li-wafers tsa GaN epitaxial tse thehiloeng holim'a silicon carbide li hlahisoa, tse ka etsoang hape ho lisebelisoa tsa GaN RF tse kang li-electronic mobility transistors (HEMTs);

Ka ho hōla silicon carbide epitaxial layer ka conductive substrate ho fumana silicon carbide epitaxial wafer, le ka epitaxial lera ka ho etsa Schottky diodes, khauta-oksijene halofo-tšimo phello transistors, insulated heke bipolar transistors le lisebelisoa tse ling tsa matla, kahoo boleng ba epitaxial ka tshebetso ya sesebediswa e le tšusumetso e khōlō haholo ho ntshetsopele ya indasteri e boetse e phetha karolo ea bohlokoa haholo.