50.8mm 2inch GaN hodima sapphire Epi-layer wafer

50.8mm 2inch GaN ho sapphire Epi-layer wafer Setšoantšo se Featured

Tlhaloso e Khutšoanyane:

Joalo ka thepa ea semiconductor ea moloko oa boraro, gallium nitride e na le melemo ea ho hanyetsa mocheso o phahameng, ho lumellana ho phahameng, conductivity e phahameng ea mocheso le lekhalo le pharaletseng la sehlopha. Ho latela lisebelisoa tse fapaneng tsa substrate, maqephe a gallium nitride epitaxial a ka aroloa ka mekhahlelo e mene: gallium nitride e thehiloeng ho gallium nitride, silicon carbide based gallium nitride, sapphire based gallium nitride le silicon based gallium nitride. Letlapa la silicon-based gallium nitride epitaxial ke sehlahisoa se sebelisoang haholo se nang le theko e tlase ea tlhahiso le theknoloji ea tlhahiso e holileng.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tšebeliso ea gallium nitride GaN epitaxial sheet

Ho ipapisitsoe le ts'ebetso ea gallium nitride, li-chips tsa gallium nitride epitaxial li loketse haholo ts'ebeliso ea matla a phahameng, maqhubu a phahameng le matla a tlase.

E bonahala ka:

1) High bandgap: High bandgap e ntlafatsa boemo ba motlakase oa lisebelisoa tsa gallium nitride 'me e ka hlahisa matla a phahameng ho feta lisebelisoa tsa gallium arsenide, tse loketseng ka ho khetheha liteishene tsa motheo tsa puisano tsa 5G, radar ea sesole le masimo a mang;

2) Ts'ebetso e phahameng ea phetoho: ho hanyetsa ha gallium nitride ho fetola lisebelisoa tsa elektronike ke litekanyo tse 3 tse tlase ho feta tsa lisebelisoa tsa silicon, tse ka fokotsang haholo tahlehelo ea ho fetola;

3) Ts'ebetso e phahameng ea mocheso: mocheso o phahameng oa mocheso oa gallium nitride o etsa hore o be le ts'ebetso e babatsehang ea ho senya mocheso, e loketseng bakeng sa tlhahiso ea matla a phahameng, mocheso o phahameng le likarolo tse ling tsa lisebelisoa;

4) Ho senyeha ha matla a tšimo ea motlakase: Le hoja matla a matla a motlakase a gallium nitride a le haufi le a silicon nitride, ka lebaka la ts'ebetso ea semiconductor, ho se lumellane ha thepa ea thepa le lintlha tse ling, mamello ea motlakase ea lisebelisoa tsa gallium nitride hangata e ka ba 1000V, 'me Tšebeliso e sireletsehileng ea motlakase hangata e ka tlase ho 650V.

Ntho	GaN-TCU-C50	GaN-TCN-C50	GaN-TCP-C50
Litekanyo	e 50.8mm ± 0.1mm
Botenya	4.5±0.5 um		4.5±0.5um
Boitloaelo	C-sefofane(0001) ±0.5°
Mofuta oa Tsamaiso	Mofuta oa N (o sa butsoa)	Mofuta oa N (Si-doped)	Mofuta oa P (Mg-doped)
Resistivity(3O0K)	<0.5 Q・cm	<0.05 Q・cm	~ 10 Q・cm
Boiketlo ba Mojari	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3	> 6x1016 cm^-3
Motsamao	~ 300 cm²/Vs	~ 200 cm²/Vs	~ 10cm²/Vs
Dislocation Density	Ka tlase ho 5x10⁸cm^-2(e baloa ke FWHMs ea XRD)
Sebopeho sa substrate	GaN on Sapphire(E Tloaelehileng: Khetho ea SSP: DSP)
Sebaka se Sebeletsang sa Surface	90%
Sephutheloana	E phuthetsoe ka har'a tikoloho ea phaposi e hloekileng ea sehlopha sa 100, ka har'a lik'hasete tsa 25pcs kapa lijana tse se nang letho, tlas'a moea oa naetrojene.