6 ho Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade

Tlhaloso e Khutšoanyane:

Silicon Carbide (SiC) e fetola indasteri ea semiconductor, haholo ts'ebelisong ea matla a holimo, a maqhubu a holimo le a hanyetsanang le radiation. Ingot ea 6-inch 4H-SiC semi-insulating, e fanoang ka sehlopha sa dummy, ke lisebelisoa tsa bohlokoa bakeng sa prototyping, lipatlisiso le mekhoa ea ho lekanya. Ka bandgap e pharaletseng, conductivity e ntle ea mocheso, le matla a mochine, ingot ena e sebetsa e le khetho e theko e tlaase bakeng sa tlhahlobo le ts'ebetso ea ts'ebetso ntle le ho senya boleng ba motheo bo hlokahalang bakeng sa tsoelo-pele e tsoetseng pele. Sehlahisoa sena se fana ka mefuta e fapaneng ea ts'ebeliso, ho kenyeletsoa lisebelisoa tsa elektronike tsa motlakase, lisebelisoa tsa radio-frequency (RF) le optoelectronics, e leng se etsang hore e be sesebelisoa sa bohlokoa bakeng sa indasteri le mekhatlo ea lipatlisiso.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Thepa

1. Thepa ea 'Mele le Sebopeho
● Mofuta oa Boitsebiso: Silicon Carbide (SiC)
● Polytype: 4H-SiC, sebopeho sa kristale sa hexagonal
● Bophara: 6 inches (150 mm)
● Botenya: E ka hlophisoa (5-15 mm e tloaelehileng bakeng sa kereiti ea dummy)
● Crystal Orientation:
oPrimary: [0001] (C-plane)
oSecondary options: Off-axis 4° bakeng sa kholo e ntlafalitsoeng ea epitaxial
●Tsamaiso ea Pele ea Phatlalatso: (10-10) ± 5 °
●Secondary Flat Orientation: 90° counterclockwise ho tloha foleteng ea mantlha ± 5°

2. Thepa ea Motlakase
● Ho hanyetsa:
oSemi-insulating (>106^66 Ω·cm), e loketse ho fokotsa matla a parasitic.
● Mofuta oa Doping:
o Doped ka boomo, ho fella ka ho hanyetsa motlakase o phahameng le botsitso tlas'a maemo a mangata a ts'ebetso.

3. Thermal Properties
● Thermal Conductivity: 3.5-4.9 W / cm·K, e nolofalletsang ho senya mocheso o sebetsang hantle ka mekhoa e matla ea matla.
● Thermal Expansion Coefficient: 4.2 × 10−64.2 \ linako tse 10 ^ {-6} 4.2 × 10−6 / K, ho netefatsa botsitso ba dimensional nakong ea ts'ebetso ea mocheso o phahameng.

4. Lintho tsa Optical
● Bandgap: Bandgap e pharaletseng ea 3.26 eV, e lumellang ho sebetsa tlas'a maqhubu a phahameng le mocheso.
● Ho pepeseha: Ponaletso e phahameng ho UV le maqhubu a bonahalang, a bohlokoa bakeng sa tlhahlobo ea optoelectronic.

5. Thepa ea Mechini
●Bothata: Mohs tekanyo ea 9, ea bobeli ho ea ho daemane, e netefatsang ho tšoarella nakong ea ts'ebetso.
●Defect Density:
o E laoloa bakeng sa liphoso tse nyane tse kholo, e netefatsa boleng bo lekaneng bakeng sa lits'ebetso tsa dummy-grade.
● Ho batalla: Ho tšoana le ho kheloha

Paramethara	Lintlha	Yuniti
Kereiti	Sehlopha sa Dummy
Diameter	150.0 ± 0.5	mm
Wafer Orientation	On-axis: <0001> ± 0.5°	tekanyo
Ho hanyetsa Motlakase	> 1E5	Ω·cm
Maemo a Motheo a Flat	{10-10} ± 5.0°	tekanyo
Bolelele ba Phatlalatso ba Pele	Notch
Cracks (Tlhahlobo ea Leseli le Matla a Phahameng)	<3 mm ka radial	mm
Hex Plates (Tlhahlobo ea Leseli le Matla a Phahameng)	Kakaretso ≤ 5%	%
Libaka tsa Polytype (Tlhahlobo ea Leseli le Matla a Phahameng)	Kakaretso ≤ 10%	%
Boima ba Micropipe	<50	cm−2^-2−2
Edge Chipping	3 e lumelletsoe, e 'ngoe le e' ngoe ≤ 3 mm	mm
Hlokomela	Slicing wafer botenya <1 mm,> 70% (ntle le lipheletsong tse peli) e fihlela litlhoko tse kaholimo.

Lisebelisoa

1. Prototyping le Patlisiso
Dummy-grade 6-inch 4H-SiC ingot ke sesebelisoa se loketseng bakeng sa prototyping le lipatlisiso, se lumellang baetsi le lilaboratori ho:
● Litekanyetso tsa ts'ebetso ea teko ho Chemical Vapor Deposition (CVD) kapa Physical Vapor Deposition (PVD).
● Hlaolela le ho ntlafatsa mekhoa ea ho seha, ho bentša le ho seha liphaphatha.
●Sheba meralo e mecha ea lisebelisoa pele u fetela ho lisebelisoa tsa boemo ba tlhahiso.

2. Teko ea Sesebelisoa le Teko
Thepa ea semi-insulating e etsa hore ingot ena e be ea bohlokoa bakeng sa:
● Ho lekola le ho lekanya thepa ea motlakase ea matla a holimo le lisebelisoa tse phahameng haholo.
●Ho etsisa maemo a tshebetso bakeng sa MOSFETs, IGBTs, kapa diode dibakeng tsa teko.
● E sebetsa e le mokhoa o sa tsitsang oa li-substrates tsa boemo bo holimo nakong ea ntlafatso ea pele.

3. Matla a Elektronike
Ts'ebetso e phahameng ea mocheso le litšobotsi tse pharalletseng tsa 4H-SiC li thusa ho sebetsa hantle ho lisebelisoa tsa elektroniki, ho kenyelletsa:
● Lisebelisoa tsa motlakase tse matla haholo.
● Li-inverters tsa koloi ea motlakase (EV).
● Lisebelisoa tsa matla a tsosolositsoeng, tse kang li-inverters tsa letsatsi le li-turbine tsa moea.

4. Likopo tsa Radio Frequency (RF).
Litahlehelo tse tlase tsa dielectric tsa 4H-SiC le motsamao o phahameng oa elektronike li etsa hore e tšoanelehe bakeng sa:
● Li-amplifiers tsa RF le li-transistors ho lisebelisoa tsa puisano.
● Sistimi ea radar ea maqhubu a holimo bakeng sa lisebelisoa tsa sefofane le ts'ireletso.
● Likarolo tsa marang-rang tse se nang mohala bakeng sa litheknoloji tse ntseng li hlaha tsa 5G.

5. Lisebelisoa tse hanyetsanang le mahlaseli
Ka lebaka la khanyetso ea tlhaho ho bofokoli bo bakoang ke radiation, semi-insulating 4H-SiC e loketse bakeng sa:
● Thepa ea ho hlahloba sebaka, ho kenyelletsa le lisebelisoa tsa elektroniki tsa sathelaete le lisebelisoa tsa motlakase.
● Thepa ea elektronike e thatafalitsoeng ke mahlaseli bakeng sa ho hlahloba le ho laola nyutlelie.
● Ts'ireletso ea ts'ireletso e hlokang matla maemong a feteletseng.

6. Optoelectronics
Ponahalo ea optical le bandgap e pharaletseng ea 4H-SiC e nolofalletsa tšebeliso ea eona ho:
● Li-photodetectors tsa UV le li-LED tse nang le matla a phahameng.
● Ho lekola likoahelo tsa optical le liphekolo tse holim'a metsi.
● Prototyping optical components for advanced sensors.

Melemo ea Dummy-Grade Material

Katleho ea Litšenyehelo:
Sehlopha sa dummy ke mokhoa o theko e tlaase ho feta oa ho etsa lipatlisiso kapa lisebelisoa tsa boemo ba tlhahiso, e leng se etsang hore e be se loketseng bakeng sa tlhahlobo e tloaelehileng le ntlafatso ea ts'ebetso.

Customizability:
Litekanyo tse lokisehang le litekanyo tsa kristale li netefatsa ho lumellana le mefuta e mengata ea lits'ebetso.

Scalability:
Bophahamo ba 6-inch bo lumellana le maemo a indasteri, e lumellang sekhahla se se nang moeli ho mekhoa ea tlhahiso ea tlhahiso.

Matla:
Matla a phahameng a mochine le botsitso ba mocheso li etsa hore ingot e tšoarelle le ho tšepahala tlas'a maemo a fapaneng a liteko.

Mefuta-futa:
E loketse liindasteri tse ngata, ho tloha lits'ebetsong tsa matla ho ea ho puisano le optoelectronics.

Qetello

The 6-inch Silicon Carbide (4H-SiC) semi-insulating ingot, dummy grade, e fana ka sethala se tšepahalang le se feto-fetohang bakeng sa lipatlisiso, prototyping le liteko makaleng a mahlale a morao-rao. Thepa ea eona e ikhethang ea mocheso, motlakase le mochini, e kopantsoe le ho khonahala le ho khonahala, e e etsa sesebelisoa sa bohlokoa bakeng sa barutehi le indastering. Ho tloha ho lisebelisoa tsa elektroniki ho ea ho litsamaiso tsa RF le lisebelisoa tse thatafalitsoeng ke radiation, ingot ena e ts'ehetsa boqapi boemong bo bong le bo bong ba nts'etsopele.
Bakeng sa lintlha tse qaqileng haholoanyane kapa ho kopa quote, ka kopo ikopanye le rona ka kotloloho. Sehlopha sa rona sa tekheniki se ikemiselitse ho thusa ka litharollo tse lokiselitsoeng ho fihlela litlhoko tsa hau.