6 Inch 4H SEMI Type SiC composite substrate Thickness 500μm TTV≤5μm MOS grade

Tlhaloso e Khutšoanyane:

Ka tsoelo-pele e potlakileng ea likhokahano tsa 5G le thekenoloji ea radar, karoloana ea 6-inch semi-insulating SiC composite substrate e se e le lisebelisoa tsa mantlha bakeng sa tlhahiso ea lisebelisoa tse phahameng haholo. Ha ho bapisoa le li-substrate tsa setso tsa GaAs, substrate ena e boloka matla a phahameng a resistivity (> 10⁸ Ω·cm) ha e ntse e ntlafatsa conductivity ea mocheso ka ho feta 5x, e sebetsana ka katleho le mathata a ho senya mocheso lisebelisoa tsa millimeter-wave. Li-amplifiers tse ka hare ho lisebelisoa tsa letsatsi le letsatsi tse kang li-smartphones tsa 5G le liteishene tsa puisano tsa sathelaete li ka 'na tsa hahoa holim'a karoloana ena. Ka ho sebelisa theknoloji ea rona ea "buffer layer doping compensation", re fokolitse boima ba micropipe ho ba ka tlase ho 0.5/cm² 'me ra fumana tahlehelo ea microwave e tlase haholo ea 0.05 dB/mm.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litekanyetso tsa tekheniki

Lintho	Tlhaloso	Lintho	Tlhaloso
Diameter	150±0.2 limilimithara	Sefahleho se ka pele (si-face) /si-fahleng	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	Edge Chip, Scratch, Crack (tlhahlobo ea pono)	Ha ho letho
Ho hanyetsa	≥1E8 Ω·cm	TTV	≤5 μm
Fetisetsa lera Botenya	≥0.4 μm	Warp	≤35 μm
Lefela (2mm>D>0.5mm)	≤5 ea/Wafer	Botenya	500±25 μm

Likarolo tsa Bohlokoa

1. Tshebetso e Ikgethileng ya High-Frequency
The 6-inch semi-insulating SiC composite substrate e sebelisa moralo o hlophisitsoeng oa dielectric layer, o netefatsa phapang ea kamehla ea dielectric ea <2% ho Ka-band (26.5-40 GHz) le ho ntlafatsa botsitso ba karolo ka 40%. Keketseho ea 15% ea katleho le 20% ea matla a tlase a sebelisoang ho li-module tsa T / R ho sebelisa substrate ena.

2. Phahamiso ea Thermal Management
Mohaho o ikhethang oa "borokho ba mocheso" o kopanyang o thusa lateral thermal conductivity ea 400 W/m·K. Li-modules tsa PA tsa 28 GHz 5G setsi sa motheo, mocheso oa matekoane o phahama ka 28 ° C feela ka mor'a lihora tsa 24 tsa ts'ebetso e tsoelang pele-50 ° C e tlase ho feta tharollo e tloaelehileng.

3. Superior Wafer Quality
Ka mokhoa o ntlafalitsoeng oa Physical Vapor Transport (PVT), re fihlela sekhahla sa dislocation <500/cm² le Total Thickness Variation (TTV) <3 μm.
4. Tlhahiso-Botsoalleng ho sebetsa
Ts'ebetso ea rona ea laser annealing e etselitsoeng "6-inch semi-insulating SiC composite substrate" e fokotsa sekhahla sa boemo ba leholimo ka liodara tse peli tsa boholo pele ho epitaxy.

Lisebelisoa tse ka Sehloohong

1. Likarolo tsa mantlha tsa 5G Base Station
Ka mefuta e mengata ea li-antenna tsa MIMO, lisebelisoa tsa GaN HEMT ho li-substrates tse kopantsoeng tsa SiC tse 6-inch li fihlella matla a tlhahiso ea 200W le> 65% e sebetsang hantle. Liteko tsa masimong ho 3.5 GHz li bonts'itse keketseho ea 30% ea radius ea tšireletso.

2. Mekhoa ea puisano ea Satellite
Li-transceivers tsa satellite tsa Low-Earth orbit (LEO) tse sebelisang substrate ena li bonts'a 8 dB EIRP e phahameng ho Q-band (40 GHz) ha li ntse li fokotsa boima ba 'mele ka 40%. Li-terminals tsa SpaceX Starlink li e amohetse bakeng sa tlhahiso ea bongata.

3. Mekhoa ea Radar ea Sesole
Li-module tsa radar tsa T/R tse karolong e ka tlase ena li fihlella 6-18 GHz bandwidth le palo ea lerata e tlase joalo ka 1.2 dB, e atolosa sebaka sa ho lemoha ka 50 km lits'ebetsong tsa radar tse lemosang esale pele.

4. Likoloi tsa Millimeter-Wave Radar
Lichifi tsa radar tsa likoloi tsa 79 GHz tse sebelisang karoloana ena li ntlafatsa tharollo ea angular ho isa ho 0.5 °, li fihlela litlhoko tsa ho khanna ka boithaopo ba L4.

Re fana ka tharollo e felletseng ea litšebeletso bakeng sa likaroloana tse kopaneng tsa SiC tsa 6-inch semi-insulating. Mabapi le ho hlophisa liparamente tsa lisebelisoa, re ts'ehetsa taolo e nepahetseng ea ho hanyetsa ka har'a mefuta e fapaneng ea 10⁶-10¹⁰ Ω·cm. Haholo-holo bakeng sa lits'ebetso tsa sesole, re ka fana ka khetho ea khanyetso e phahameng haholo ea >10⁹ Ω·cm. E fana ka litlhaloso tse tharo tsa botenya ba 200μm, 350μm le 500μm ka nako e le 'ngoe, ka mamello e laoloang ka thata ka hare ho ± 10μm, e finyella litlhoko tse fapaneng ho tloha ho lisebelisoa tse phahameng tsa maqhubu ho ea ho lisebelisoa tsa matla a phahameng.

Mabapi le mekhoa ea phekolo ea holim'a metsi, re fana ka litharollo tse peli tsa setsebi: Chemical Mechanical Polishing (CMP) e ka finyella boemo ba atomic holim'a flatness ka Ra<0.15nm, ho finyella litlhoko tse boima ka ho fetisisa tsa kgolo ea epitaxial; Theknoloji ea phekolo ea epitaxial e lokiselitsoeng holim'a litlhoko tsa tlhahiso e potlakileng e ka fana ka libaka tse boreleli tse nang le Sq <0.3nm le botenya bo setseng ba oxide <1nm, e leng ho nolofatsang ts'ebetso ea pele ho nako qetellong ea mofani.

XKH e fana ka litharollo tse felletseng bakeng sa likaroloana tse kopaneng tsa SiC tse 6-inch.

1. Boitsebiso ba Parameter Customization
Re fana ka ts'ebetso e nepahetseng ea tokiso ka har'a sebaka sa 10⁶-10¹⁰ Ω·cm, ka likhetho tse ikhethileng tse phahameng ka ho fetesisa >10⁹ Ω·cm tse fumanehang bakeng sa ts'ebeliso ea sesole/sefofane.

2. Tema Litlhaloso
Likhetho tse tharo tse tloaelehileng tsa botenya:

200μm (e ntlafalitsoe bakeng sa lisebelisoa tsa maqhubu a holimo)

350μm (litlhaloso tse tloaelehileng)

500μm (e etselitsoeng lisebelisoa tsa matla a holimo)
* Mefuta eohle e fapaneng e boloka mamello e tiileng ea botenya ba ± 10μm.

3. Litheknoloji tsa Phekolo ea Bokaholimo

Chemical Mechanical Polishing (CMP): E fihlella ho batalla ha bokaholimo ba atomic ka Ra<0.15nm, ho fihlela litlhoko tse thata tsa kholo ea epitaxial bakeng sa RF le lisebelisoa tsa motlakase.

4. Epi-Ready Surface Processing

· E fana ka libaka tse boreleli tse nang le Sq<0.3nm e thata

· E laola botenya ba oxide ea tlhaho ho fihla ho <1nm

· E felisa mehato e ka bang 3 ea ho sebetsa pele ho lits'ebeletso tsa bareki