6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Tlhaloso e Khutšoanyane:

Ka lebaka la ts'ebetso ea indasteri ea semiconductor ea ts'ebetso e phahameng le litšenyehelo tse tlase, karolo e nyane ea SiC e kopanyang ea 6-inch e hlahile. Ka theknoloji e ncha e kopantseng thepa, sephaphatha sena sa 6-inch se fihlela 85% ea ts'ebetso ea li-wafers tsa setso tse 8-inch ha se bitsa 60% feela joalo. Lisebelisoa tsa motlakase lits'ebetsong tsa letsatsi le letsatsi joalo ka liteishene tse ncha tsa ho tjhaja koloi ea matla, li-module tsa motlakase tsa 5G, esita le li-drive tse feto-fetohang tsa lisebelisoa tsa lapeng tsa pele e kanna eaba li se li ntse li sebelisa li-substrates tsa mofuta ona. Theknoloji ea rona e nang le patented multi-layer epitaxial growth e thusa hore ho be le likhokahano tse pharalletseng tsa boemo ba atomic ho li-SiC bases, tse nang le segokanyimmediamentsi sa sehokelo se ka tlase ho 1×10¹¹/cm²·eV - e leng tlhaloso e fihletseng maemo a etelletseng pele machabeng.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litekanyetso tsa tekheniki

Lintho	Tlhahisomophato	Dummymophato
Diameter	6-8 inch	6-8 inch
Botenya	350/500±25.0 μm	350/500±25.0 μm
Polytype	4H	4H
Ho hanyetsa	0.015-0.025 ohm · cm	0.015-0.025 ohm · cm
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
Sefahleho se ka pele (si-face) /si-fahleng	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Likarolo tsa Bohlokoa

1.Molemo oa Litšenyehelo: Karolo ea rona ea 6-inch conductive SiC composite substrate e sebelisa theknoloji ea "graded buffer layer" e ntlafatsang sebopeho sa thepa ho fokotsa litšenyehelo tsa thepa e tala ka 38% ha e ntse e boloka ts'ebetso e ntle ea motlakase. Litekanyo tsa sebele li bontša hore lisebelisoa tsa 650V MOSFET tse sebelisang karoloana ena li finyella phokotso ea 42% ea litšenyehelo sebakeng se seng le se seng ha se bapisoa le litharollo tse tloaelehileng, tse bohlokoa bakeng sa ho khothaletsa tšebeliso ea lisebelisoa tsa SiC ho lisebelisoa tsa motlakase tsa bareki.
2.Tlhahiso e Ntle e Ntle: Ka mekhoa e nepahetseng ea ho laola doping ea naetrojene, karolo ea rona ea 6-inch conductive SiC composite substrate e finyella ultra-low resistivity ea 0.012-0.022Ω·cm, ka phapang e laoloang ka hare ho ± 5%. Haholo-holo, re boloka ho tšoana ha resistivity esita le ka har'a sebaka sa 5mm se nang le sephaphatha, ho rarolla bothata ba nako e telele bo sebetsang indastering.
3.Thermal Performance: Mojule oa 1200V / 50A o ntlafalitsoeng o sebelisa substrate ea rona e bonts'a feela mocheso oa 45 ℃ o nyolohang ka holim'a ambient ts'ebetsong e feletseng ea mojaro - 65 ℃ e tlase ho feta lisebelisoa tse bapisoang le silicon. Sena se nolofaletsoa ke "3D thermal channel" ea rona e kopanyang sebopeho se ntlafatsang lateral thermal conductivity ho 380W/m·K le vertical thermal conductivity ho 290W/m·K.
4.Tlhaloso ea Ts'ebetso: Bakeng sa sebopeho se ikhethang sa li-substrates tse kopantsoeng tsa 6-inch conductive SiC, re ile ra hlahisa mokhoa o ts'oanang oa ho pata laser oa stealth o finyellang lebelo la ho itšeha ka 200mm / s ha re ntse re laola ho phunyeha ha bohale ka tlase ho 0.3μm. Ho feta moo, re fana ka likhetho tsa pre-nickel-plated substrate tse nolofalletsang ho kopana ka kotloloho, ho boloka bareki mehato e 'meli ea ts'ebetso.

Lisebelisoa tse ka Sehloohong

Thepa e Bohlokoa ea Grid:

Lits'ebetsong tsa phetisetso ea motlakase o phahameng haholo (UHVDC) tse sebetsang ho ± 800kV, lisebelisoa tsa IGCT tse sebelisang likaroloana tsa rona tse kopaneng tsa SiC tse 6-inch li bonts'a ntlafatso e makatsang ea ts'ebetso. Lisebelisoa tsena li fihlella phokotso ea 55% ea tahlehelo ea phetoho nakong ea lits'ebetso tsa phallo, ha e ntse e eketsa katleho ea sistimi ka kakaretso ho feta 99.2%. The substrates' superior thermal conductivity (380W/m·K) e thusa meralo ea compact converter e fokotsang sebaka sa substation ka 25% ha se bapisoa le tharollo e tloaelehileng ea silicon.

Likoloi tse Ncha tsa Matla a Matla:

Sistimi ea koloi e kenyelletsang li-substrates tsa rona tsa 6-inch conductive SiC composite e fihlella matla a matla a inverter a neng a e-so ka a bonoa a 45kW/L - ntlafatso ea 60% ho feta moralo oa bona o fetileng oa 400V oa silicon. Ka mokhoa o tsotehang ka ho fetisisa, tsamaiso e boloka ts'ebetso ea 98% ho pholletsa le mocheso oohle oa ho sebetsa ho tloha ho -40 ℃ ho ea ho +175 ℃, ho rarolla mathata a ts'ebetso ea boemo ba leholimo bo batang bo atileng ho amoheloa ha EV libakeng tsa leholimo tse ka leboea. Teko ea 'nete ea lefats'e e bonts'a keketseho ea 7.5% ea mefuta ea mariha bakeng sa likoloi tse nang le theknoloji ena.

Maqhubu a Maqhubu a Liindasteri:

Kamohelo ea li-substrates tsa rona ho li-intelligent power module (IPMs) bakeng sa litsamaiso tsa servo tsa indasteri ho fetola li-automation tsa tlhahiso. Litsing tsa machining tsa CNC, li-module tsena li fana ka karabelo ea motlakase ka lebelo la 40% (ho fokotsa nako ea ho potlakisa ho tloha ho 50ms ho isa ho 30ms) ha e ntse e khaola lerata la motlakase ka 15dB ho isa ho 65dB (A).

Consumer Electronics:

Phetoho ea lisebelisoa tsa elektroniki tsa bareki e ntse e tsoela pele ka li-substrates tsa rona tse nolofalletsang lijaja tse potlakileng tsa 65W GaN tsa moloko o latelang. Li-adapter tsena tsa motlakase tse kopaneng li fihlella phokotso ea molumo oa 30% (ho fihla ho 45cm³) ha li ntse li boloka matla a felletseng, ka lebaka la litšobotsi tse holimo tsa meralo e thehiloeng ho SiC. Litšoantšo tse futhumetseng li bonts'a mocheso o phahameng oa 68 ° C nakong ea ts'ebetso e sa khaotseng - 22 ° C e bata ho feta meralo e tloaelehileng - e ntlafatsa haholo bophelo ba sehlahisoa le polokeho.

Lits'ebeletso tsa Customization tsa XKH

XKH e fana ka ts'ehetso e felletseng ea tloaelo bakeng sa li-substrates tse kopaneng tsa SiC tse 6-inch:

Boikemisetso ba Botenya: Likhetho tse kenyelletsang 200μm, 300μm, le 350μm
2. Taolo ea Boiketlo: Maemo a feto-fetohang a mofuta oa n-doping ho tloha ho 1×10¹⁸ ho isa ho 5×10¹⁸ cm⁻³

3. Crystal Orientation: Tšehetso bakeng sa mekhoa e mengata e kenyeletsang (0001) off-axis 4 ° kapa 8 °

4. Litšebeletso tsa Teko: Tlatsa litlaleho tsa tlhahlobo ea li-parameter tsa wafer-level

Nako ea rona ea ho etella pele ea hona joale ho tloha ho prototyping ho ea ho tlhahiso ea bongata e ka ba khutšoanyane joalo ka libeke tse 8. Bakeng sa bareki ba maqheka, re fana ka lits'ebeletso tsa nts'etsopele ea ts'ebetso e ikemiselitseng ho netefatsa hore li tsamaisana hantle le litlhoko tsa sesebelisoa.