Substrate e 6 ea Conductive SiC Composite e nang le Diameter ea 4H 150mm Ra≤0.2nm Warp≤35μm

Tlhaloso e Khutšoanyane:

Ka lebaka la ho phehella ha indasteri ea semiconductor ts'ebetso e phahameng le litšenyehelo tse tlase, substrate ea SiC e tsamaisang motlakase ea lisenthimithara tse 6 e hlahile. Ka theknoloji e ncha ea motsoako oa thepa, wafer ena ea lisenthimithara tse 6 e fihlella 85% ea ts'ebetso ea li-wafer tsa setso tsa lisenthimithara tse 8 ha e ntse e bitsa 60% feela. Lisebelisoa tsa motlakase lits'ebetsong tsa letsatsi le letsatsi joalo ka liteishene tse ncha tsa ho tjhaja likoloi tsa eneji, li-module tsa motlakase tsa setsi sa 5G, esita le li-drive tsa maqhubu a feto-fetohang lisebelisoa tsa lapeng tsa boleng bo holimo li kanna tsa se li ntse li sebelisa li-substrate tsa mofuta ona. Theknoloji ea rona ea kholo ea epitaxial ea mekhahlelo e mengata e nang le patente e nolofalletsa li-interface tsa athomo tse bataletseng tsa composite li-base tsa SiC, ka bongata ba boemo ba sebopeho bo ka tlase ho 1×10¹¹/cm²·eV - tlhaloso e fihletseng maemo a etellang pele machabeng.

Romella imeile ho rona

Likaroloana

Litekanyetso tsa tekheniki

Lintho	Tlhahisosehlopha	Sephirisehlopha
Bophara	Lisenche tse 6-8	Lisenche tse 6-8
Botenya	350/500±25.0 μm	350/500±25.0 μm
Mofuta oa Polytype	4H	4H
Ho hanyetsa	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Koahela	≤35 μm	≤55 μm
Ho ba thata ka pele (Si-face)	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Likarolo tsa Bohlokoa

1. Molemo oa Litšenyehelo: Substrate ea rona ea SiC e tsamaisang motlakase ea lisenthimithara tse 6 e sebelisa theknoloji ea "graded buffer layer" e ntlafatsang motsoako oa thepa ho fokotsa litšenyehelo tsa thepa e tala ka 38% ha e ntse e boloka ts'ebetso e ntle ea motlakase. Litekanyo tsa 'nete li bontša hore lisebelisoa tsa 650V MOSFET tse sebelisang substrate ena li fumana phokotso ea 42% ea litšenyehelo ka sebaka sa yuniti ha li bapisoa le litharollo tse tloaelehileng, e leng sa bohlokoa bakeng sa ho khothaletsa ho amoheloa ha lisebelisoa tsa SiC lisebelisoa tsa elektroniki tsa bareki.
2. Litšobotsi tse Hloahloa tsa ho Tsamaisa Motlakase: Ka mekhoa e nepahetseng ea taolo ea ho sebelisa naetrojene, substrate ea rona ea SiC e kopanyang ea lisenthimithara tse 6 e fihlella resistivity e tlase haholo ea 0.012-0.022Ω·cm, ka phetoho e laoloang ka hare ho ± 5%. Haholo-holo, re boloka ho tšoana ha resistivity esita le ka hare ho sebaka sa moeli oa 5mm sa wafer, re rarolla bothata ba phello ea moeli bo bileng teng nako e telele indastering.
3.Tshebetso ya Thermal: Mojule wa 1200V/50A o hlahisitsweng ho sebediswa substrate ya rona o bontsha feela keketseho ya mocheso wa kgokelo ya 45℃ ka hodima tikoloho tshebetsong e felletseng ya mojaro - 65℃ e ka tlase ho disebediswa tse tshwanang tse thehilweng ho silicon. Sena se nolofalletswa ke sebopeho sa rona sa motswako sa "3D thermal channel" se ntlafatsang ho tsamaisa ha mocheso ka lehlakoreng ho ya ho 380W/m·K le ho tsamaisa ha mocheso ka ho otloloha ho ya ho 290W/m·K.
4. Ho Tsamaellana ha Ts'ebetso: Bakeng sa sebopeho se ikhethang sa li-substrate tse kopaneng tsa SiC tse tsamaisang motlakase tsa lisenthimithara tse 6, re ntlafalitse ts'ebetso ea ho daea ka laser e patiloeng e lumellanang e fihlellang lebelo la ho seha la 200mm/s ha re ntse re laola ho daea ha bohale ka tlase ho 0.3μm. Ho feta moo, re fana ka likhetho tsa substrate tse entsoeng pele ho nickel tse nolofalletsang ho kopanya ka kotloloho, ho pholosa bareki mehato e 'meli ea ts'ebetso.

Likopo tse ka Sehloohong

Lisebelisoa tsa Bohlokoa tsa Gridi e Bohlale:

Litsamaisong tsa phetiso ea motlakase o tobileng oa motlakase o phahameng haholo (UHVDC) tse sebetsang ho ± 800kV, lisebelisoa tsa IGCT tse sebelisang li-substrate tsa rona tsa SiC tse kopanyang motlakase tse 6-inch li bontša ntlafatso e tsotehang ea ts'ebetso. Lisebelisoa tsena li fihlella phokotso ea 55% tahlehelong ea ho fetola motlakase nakong ea lits'ebetso tsa phetoho, ha li ntse li eketsa katleho ea sistimi ka kakaretso ho feta 99.2%. Ho tsamaisa mocheso ho phahameng ha li-substrate (380W/m·K) ho nolofalletsa meralo ea li-converter tse nyane tse fokotsang sebaka sa seteishene ka 25% ha ho bapisoa le litharollo tse tloaelehileng tse thehiloeng ho silicon.

Mechini e Mecha ea Matla ea Likoloi:

Sistimi ea ho khanna e kenyelletsang li-substrate tsa rona tsa SiC tse tsamaisang motlakase tsa lisenthimithara tse 6 e fihlella matla a sa tloaelehang a inverter a 45kW/L - ntlafatso ea 60% ho feta moralo oa bona oa pele o thehiloeng ho silicon ea 400V. Ho khahlisang le ho feta, sistimi e boloka katleho ea 98% ho pholletsa le mocheso oohle oa ts'ebetso ho tloha ho -40℃ ho isa ho +175℃, e rarollang liphephetso tsa ts'ebetso ea boemo ba leholimo bo batang tse ammeng ho amoheloa ha EV maemong a leholimo a leboea. Teko ea 'nete e bonts'a keketseho ea 7.5% ea mefuta ea mariha bakeng sa likoloi tse nang le theknoloji ena.

Li-Drive tsa Maqhubu a Feto-fetohang a Liindasteri:

Ho amohelwa ha di-substrate tsa rona ka hara di-module tsa matla a bohlale (IPM) bakeng sa ditsamaiso tsa servo tsa diindasteri ho fetola boiketsetso ba tlhahiso. Ditsing tsa machining tsa CNC, di-module tsena di fana ka karabelo ya enjene e potlakileng ka 40% (e fokotsa nako ya ho potlakisa ho tloha ho 50ms ho isa ho 30ms) ha ka nako e le nngwe di fokotsa lerata la motlakase ka 15dB ho isa ho 65dB(A).

Lisebelisoa tsa Elektroniki tsa Bareki:

Phetoho ea lisebelisoa tsa elektroniki tsa bareki e ntse e tsoela pele ka li-substrate tsa rona tse nolofalletsang li-charger tse potlakileng tsa moloko o latelang tsa 65W GaN. Li-adapter tsena tsa motlakase tse nyane li fihlella phokotso ea molumo ea 30% (ho fihlela ho 45cm³) ha li ntse li boloka matla a felletseng a hlahisoang, ka lebaka la litšobotsi tse phahameng tsa ho fetola tsa meralo e thehiloeng ho SiC. Setšoantšo sa mocheso se bontša mocheso o phahameng oa linyeoe oa 68°C feela nakong ea ts'ebetso e tsoelang pele - 22°C e pholileng ho feta meralo e tloaelehileng - e ntlafatsa haholo bophelo ba sehlahisoa le polokeho.

Litšebeletso tsa ho Etsa Lintho ka Bohona tsa XKH

XKH e fana ka tšehetso e felletseng ea ho iketsetsa lintho bakeng sa li-substrate tse kopaneng tsa SiC tse tsamaisang motlakase tsa lisenthimithara tse 6:

Ho Itlhophisa ka Botenya: Dikgetho tse kenyeletsang 200μm, 300μm, le 350μm
2. Taolo ea ho Resistance: Khatello ea doping ea mofuta oa n e ka fetoloang ho tloha ho 1 × 10¹⁸ ho isa ho 5 × 10¹⁸ cm⁻³

3. Kristale e Tsamaisanang: Tšehetso bakeng sa litsela tse ngata tse kenyeletsang (0001) off-axis 4° kapa 8°

4. Litšebeletso tsa Teko: Litlaleho tse felletseng tsa liteko tsa liparamente tsa boemo ba wafer

Nako ea rona ea hona joale ea ho etella pele ho tloha ho prototyping ho ea tlhahisong e kholo e ka ba khutšoanyane joalo ka libeke tse 8. Bakeng sa bareki ba maano, re fana ka lits'ebeletso tse inehetseng tsa nts'etsopele ea ts'ebetso ho netefatsa hore e lumellana hantle le litlhoko tsa sesebelisoa.