6 inch conductive single crystal SiC holim'a polycrystalline SiC composite substrate Bophara 150mm P mofuta oa N

Kristale e le 'ngoe e tsamaisang motlakase ea lisenthimithara tse 6 SiC holim'a substrate ea polycrystalline SiC e kopantsoeng Bophara 150mm Mofuta oa P Mofuta oa N Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate e kopantsoeng ea polycrystalline SiC e emela tharollo e ncha ea thepa ea silicon carbide (SiC) e etselitsoeng lisebelisoa tsa elektroniki tse matla haholo, mocheso o phahameng le maqhubu a phahameng. Substrate ena e na le lera le sebetsang la SiC le le leng le hokahaneng le motheo oa SiC ea polycrystalline ka lits'ebetso tse ikhethileng, tse kopanyang thepa e phahameng ea motlakase ea SiC ea monocrystalline le melemo ea litšenyehelo tsa SiC ea polycrystalline.
Ha e bapisoa le li-substrate tsa SiC tse tloaelehileng tse nang le monocrystalline e felletseng, SiC e nang le monocrystalline e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate e kopantsoeng ea polycrystalline SiC e boloka motsamao o phahameng oa lielektrone le khanyetso e phahameng ea motlakase ha e ntse e fokotsa haholo litšenyehelo tsa tlhahiso. Boholo ba eona ba wafer ba lisenthimithara tse 6 (150 mm) bo netefatsa hore bo lumellana le mela e teng ea tlhahiso ea semiconductor, bo nolofalletsa tlhahiso e ka atolosoang. Ho feta moo, moralo oa conductive o lumella tšebeliso e tobileng tlhahisong ea lisebelisoa tsa motlakase (mohlala, li-MOSFET, li-diode), ho felisa tlhoko ea lits'ebetso tse ling tsa doping le ho nolofatsa mesebetsi ea tlhahiso.

Romella imeile ho rona

Likaroloana

Litekanyetso tsa tekheniki

Boholo:	6 intshi
Bophara:	150 mm
Botenya:	400-500 μm
Liparamitha tsa Filimi ea SiC ea Monocrystalline
Mofuta oa polytype:	4H-SiC kapa 6H-SiC
Ho Hloka Meriana e Mengata:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Botenya:	5-20 μm
Khanyetso ea Lakane:	10-1000 Ω/sekwere
Ho Tsamaea ha Elektrone:	800-1200 cm²/Vs
Ho Tsamaea ha Likoti:	100-300 cm²/Vs
Liparamitha tsa Lera la Buffer la Polycrystalline SiC
Botenya:	50-300 μm
Ho tsamaisa mocheso:	150-300 W/m·K
Liparamitha tsa Monocrystalline SiC Substrate
Mofuta oa polytype:	4H-SiC kapa 6H-SiC
Ho Hloka Meriana e Mengata:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Botenya:	300-500 μm
Boholo ba Koro:	> 1 mm
Bokahare ba Bokaholimo:	Ho fokotsa boima ba 'mele ka tlase ho 0.3 mm
Matlo a Mekaniki le Motlakase
Boima:	Li-Moh tse 9-10
Matla a Khatello:	3-4 GPa
Matla a tšepe:	0.3-0.5 GPa
Matla a Tšimo ea ho Arohanngoa:	> 2 MV/cm
Mamello e Felletseng ea Tekanyo:	> 10 Mrad
Khanyetso ea Phello ea Ketsahalo e le 'Ngoe:	> 100 MeV·cm²/mg
Ho tsamaisa mocheso:	150-380 W/m·K
Mefuta ea Mocheso o Buuoang:	-55 ho isa ho 600°C

Litšobotsi tsa Bohlokoa

SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopaneng e fana ka tekano e ikhethang ea sebopeho sa thepa le ts'ebetso, e leng se etsang hore e lokele libaka tse hlokang tlhokomelo ea indasteri:

1. Katleho ea Litšenyehelo: Motheo oa SiC o nang le polycrystalline o fokotsa litšenyehelo haholo ha o bapisoa le SiC e nang le monocrystalline e felletseng, ha lera le sebetsang la SiC le nang le monocrystalline le netefatsa ts'ebetso ea sehlopha sa lisebelisoa, e loketseng lits'ebetso tse nang le litšenyehelo tse tlase.

2. Litšobotsi tse Ikhethang tsa Motlakase: Lera la SiC le nang le monocrystalline le bontša ho tsamaea ho phahameng ha carrier (>500 cm²/V·s) le ho ba le sekoli se tlase, ho tšehetsa ts'ebetso ea sesebelisoa sa maqhubu a phahameng le matla a phahameng.

3. Ho Tsitsisa Mocheso o Phahameng: Ho hanyetsa mocheso o phahameng ha SiC (>600°C) ho netefatsa hore substrate e kopaneng e lula e tsitsitse tlas'a maemo a feteletseng, e leng se etsang hore e lokele likoloi tsa motlakase le lits'ebetso tsa lienjene tsa indasteri.

Boholo ba Wafer bo Tloaelehileng ba lisenthimithara tse 4.6: Ha bo bapisoa le li-substrate tsa SiC tsa lisenthimithara tse 4 tsa setso, sebopeho sa lisenthimithara tse 6 se eketsa chai ea chip ka ho feta 30%, e leng se fokotsang litšenyehelo tsa sesebelisoa ka yuniti.

5. Moralo o Tsamaisang: Mealo ya mofuta wa N kapa mofuta wa P e seng e kentswe doped e fokotsa mehato ya ho kenya ion tlhahisong ya sesebediswa, e ntlafatsa bokgoni ba tlhahiso le chai.

6. Taolo e Phahameng ea Thermal: Ho tsamaisa mocheso ha setsi sa polycrystalline SiC (~120 W/m·K) ho atamela ho ea monocrystalline SiC, ho sebetsana ka katleho le liphephetso tsa ho qhala mocheso lisebelisoa tse nang le matla a maholo.

Litšobotsi tsena li beha SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopaneng e le tharollo ea tlholisano bakeng sa liindasteri tse kang matla a nchafatsoang, lipalangoang tsa terene le lifofane.

Likopo tsa mantlha

SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopantsoeng e sebelisitsoe ka katleho masimong a 'maloa a batloang haholo:
1. Li-Powertrain tsa Likoloi tsa Motlakase: Li sebelisoa ho li-MOSFET tsa SiC tse nang le motlakase o phahameng le li-diode ho ntlafatsa katleho ea inverter le ho atolosa bolelele ba betri (mohlala, mehlala ea Tesla, BYD).

2. Di-Drive tsa Diindasteri: E nolofalletsa di-module tsa matla tse nang le mocheso o phahameng, tse feto-fetohang ka maqhubu a phahameng, e fokotsa tshebediso ya matla mechineng e boima le di-turbine tsa moya.

3. Li-Inverter tsa Photovoltaic: Lisebelisoa tsa SiC li ntlafatsa katleho ea phetoho ea letsatsi (>99%), ha substrate e kopaneng e fokotsa litšenyehelo tsa sistimi haholo.

4. Sepalangoang sa Terene: Se sebediswa ho di-converter tsa ho hula bakeng sa ditsamaiso tsa terene tse lebelo le hodimo le tsa terene e ka tlasa lefatshe, tse fanang ka kganyetso ya motlakase o phahameng (>1700V) le dintlha tse nyane tsa sebopeho.

5. Sebaka sa lifofane: Se loketse litsamaiso tsa matla a sathelaete le lipotoloho tsa taolo ea enjene ea lifofane, tse khonang ho mamella mocheso o feteletseng le mahlaseli.

Tlhahisong e sebetsang, SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a polycrystalline SiC composite substrate e lumellana ka botlalo le lits'ebetso tse tloaelehileng tsa sesebelisoa sa SiC (mohlala, lithography, etching), e sa hlokeng matsete a eketsehileng a capital.

Litšebeletso tsa XKH

XKH e fana ka tšehetso e felletseng bakeng sa SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopantsoeng, e koahelang R&D ho isa tlhahisong ea bongata:

1. Ho iketsetsa: Botenya ba lera la monocrystalline bo ka fetoloang (5–100 μm), mahloriso a doping (1e15–1e19 cm⁻³), le tataiso ea kristale (4H/6H-SiC) ho fihlela litlhoko tse fapaneng tsa sesebelisoa.

2.Ts'ebetso ea Wafer: Phepelo e kholo ea li-substrate tsa lisenthimithara tse 6 tse nang le litšebeletso tsa ho fokotsa le ho etsa tšepe bakeng sa ho kopanya li-plug-and-play.

3. Netefatso ea Botekgeniki: E kenyelletsa tlhahlobo ea kristale ea XRD, tlhahlobo ea phello ea Hall, le tekanyo ea ho hanyetsa mocheso ho potlakisa ho tšoaneleha ha thepa.

4.Potoloho e Potlakileng: Disampole tsa di-inch tse 2 ho isa ho tse 4 (tshebetso e tshwanang) bakeng sa ditheo tsa dipatlisiso ho potlakisa dipotoloho tsa ntshetsopele.

5. Tlhahlobo le Ntlafatso ea ho Hlōleha: Litharollo tsa maemo a thepa bakeng sa liphephetso tsa ts'ebetso (mohlala, liphoso tsa lera la epitaxial).

Sepheo sa rona ke ho theha SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopantsoeng e le tharollo e ratoang ea ts'ebetso ea litšenyehelo bakeng sa lisebelisoa tsa motlakase tsa SiC, e fanang ka tšehetso ea ho tloha qalong ho isa qetellong ho tloha tlhahisong ea prototyping ho isa tlhahisong ea bophahamo.

Qetello

SiC e tsamaisang motlakase ea lisenthimithara tse 6 holim'a substrate ea polycrystalline SiC e kopaneng e fihlella tekano e kholo lipakeng tsa ts'ebetso le litšenyehelo ka sebopeho sa eona se secha sa mono/polycrystalline hybrid. Ha likoloi tsa motlakase li ntse li ata 'me Industry 4.0 e ntse e tsoela pele, substrate ena e fana ka motheo o tšepahalang oa thepa bakeng sa lisebelisoa tsa motlakase tsa moloko o latelang. XKH e amohela tšebelisano-'moho ho hlahloba haholoanyane bokhoni ba theknoloji ea SiC.