6 inch Conductive single crystal SiC holim'a polycrystalline SiC composite substrate Diameter 150mm P mofuta oa N mofuta

Tlhaloso e Khutšoanyane:

SiC ea 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e emela tharollo ea thepa e ncha ea silicon carbide (SiC) e etselitsoeng lisebelisoa tsa elektronike tse matla, mocheso o phahameng le oa maqhubu a phahameng. Substrate ena e na le lera le le leng la kristale ea SiC e sebetsang e kopantsoeng le setsi sa polycrystalline SiC ka mekhoa e khethehileng, ho kopanya lisebelisoa tse phahameng tsa motlakase tsa monocrystalline SiC le melemo ea litšenyehelo tsa polycrystalline SiC.
Ha ho bapisoa le li-substrates tse tloaelehileng tsa SiC tse tletseng monocrystalline, 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e boloka ho tsamaea ha elektronike e phahameng le ho hanyetsa matla a phahameng ha ho ntse ho fokotsa haholo litšenyehelo tsa tlhahiso. Boholo ba eona ba li-inch tse 6 (150 mm) bo netefatsa hore bo lumellana le melapo e teng ea tlhahiso ea semiconductor, e nolofalletsang tlhahiso e mpe. Ntle le moo, moralo oa conductive o lumella ts'ebeliso e tobileng ho theho ea lisebelisoa tsa motlakase (mohlala, li-MOSFET, diode), ho felisa tlhoko ea lits'ebetso tse ling tsa doping le ho nolofatsa ts'ebetso ea tlhahiso.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litekanyetso tsa tekheniki

Boholo:	6 intshi
Diameter:	150 limilimithara
Botenya:	400-500 μm
Monocrystalline SiC Film Parameters
Polytype:	4H-SiC kapa 6H-SiC
Ho tsepamisa maikutlo ho Doping:	1×10¹⁴ - 1×10¹⁸cm⁻³
Botenya:	5-20 μm
Ho hanyetsa Leqephe:	10-1000 Ω/sq
Elektrone Mobility:	800-1200 cm²/Vs
Hole Mobility:	100-300 cm²/Vs
Polycrystalline SiC Buffer Layer Parameters
Botenya:	50-300 μm
Thermal Conductivity:	150-300 W/m·K
Monocrystalline SiC Substrate Parameters
Polytype:	4H-SiC kapa 6H-SiC
Ho tsepamisa maikutlo ho Doping:	1×10¹⁴ - 1×10¹⁸cm⁻³
Botenya:	300-500 μm
Boholo ba lijo-thollo:	> 1 limilimithara
Bokhopo ba Bokahohle:	<0.3 limilimithara RMS
Thepa ea Mechini le Motlakase
Ho thatafala:	9-10 Mohs
Matla a Khatetsang:	3-4 GPA
Matla a tšepe:	0.3-0.5 GPA
Karohano ea Matla a Tšimo:	> 2 MV/cm
Kakaretso ea Mamello ea Lethal dose:	> 10 Mong
Ketsahalo e le 'Ngoe ea Resistance:	> 100 MeV·cm²/mg
Thermal Conductivity:	150-380 W/m·K
Sebaka sa Mocheso oa Ts'ebetso:	-55 ho isa ho 600°C

Litšobotsi Tsa Sehlooho

SiC ea 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e fana ka tekanyo e ikhethang ea sebopeho sa thepa le ts'ebetso, e etsa hore e tšoanelehe bakeng sa maemo a boima a indasteri:

1.Cost-Effectiveness: The polycrystalline SiC base e fokotsa haholo litšenyehelo ha e bapisoa le SiC e tletseng monocrystalline, ha monocrystalline SiC e sebetsang lera e tiisang ts'ebetso ea lisebelisoa tsa lisebelisoa, e loketseng bakeng sa lits'ebetso tse hlokang litšenyehelo.

2. Thepa e Ikhethileng ea Motlakase: Lera la SiC la monocrystalline le bonts'a motsamao o phahameng oa sepalangoang (> 500 cm²/V·s) le sekoli se tlase, se ts'ehetsa ts'ebetso ea lisebelisoa tsa maqhubu a holimo le tse matla haholo.

3.Botsitso bo Phahameng ba Mocheso: Ho hanyetsa mocheso oa tlhaho oa SiC (> 600 ° C) ho tiisa hore substrate e kopantsoeng e lula e tsitsitse tlas'a maemo a feteletseng, e leng se etsang hore e tšoanelehe bakeng sa likoloi tsa motlakase le lisebelisoa tsa motlakase tsa indasteri.

4.6-inch Standardized Wafer Size: Ha e bapisoa le li-substrates tsa khale tsa 4-inch SiC, sebopeho sa 6-inch se eketsa tlhahiso ea chip ka ho feta 30%, e fokotsa litšenyehelo tsa sesebelisoa ka unit.

5.Moqapi oa Conductive: Likarolo tsa mofuta oa N-e entsoeng esale pele kapa P-mofuta li fokotsa mehato ea ho kenngoa ha ion tlhahisong ea lisebelisoa, ho ntlafatsa katleho ea tlhahiso le chai.

6.Superior Thermal Management: The polycrystalline SiC base's conductivity thermal conductivity (~ 120 W / m·K) e atamela SiC ea monocrystalline, e sebetsana ka katleho le mathata a ho senya mocheso ho lisebelisoa tse phahameng tsa matla.

Litšobotsi tsena li beha 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e le tharollo ea tlhōlisano bakeng sa liindasteri tse kang matla a tsosolositsoeng, lipalangoang tsa terene le sefofane.

Lisebelisoa tsa mantlha

SiC ea 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e kentsoe ka katleho masimong a 'maloa a batloang haholo:
1.Motlakase oa Likoloi tsa Motlakase: E sebelisoa ho SiC MOSFETs le diode tse nang le matla a phahameng a matla ho matlafatsa inverter e sebetsang hantle le ho atolosa mefuta ea betri (mohlala, mehlala ea Tesla, BYD).

2.Industrial Motor Drives: E nolofalletsa li-modules tsa matla a mocheso o phahameng, o feto-fetohang-hangata, ho fokotsa tšebeliso ea matla ka mechine e boima le li-turbine tsa moea.

Li-Inverters tsa 3.Photovoltaic: Lisebelisoa tsa SiC li ntlafatsa katleho ea ho fetola letsatsi (> 99%), ha substrate e kopantsoeng e fokotsa litšenyehelo tsa tsamaiso.

Lipalangoang tsa 4.Rail: E sebelisoa ho li-converter tsa literene bakeng sa litsamaiso tsa terene tse lebelo le tsamaeang ka tlas'a lefatše, tse fanang ka khanyetso e phahameng ea motlakase (> 1700V) le lintlha tsa li-compact form.

5.Aerospace: E loketse lisebelisoa tsa matla tsa sathelaete le li-circuits tsa taolo ea enjene ea lifofane, tse khonang ho mamella mocheso o feteletseng le mahlaseli.

Ka mokhoa o sebetsang, 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e lumellana ka botlalo le mekhoa e tloaelehileng ea lisebelisoa tsa SiC (mohlala, lithography, etching), e sa hlokeng matsete a eketsehileng a lichelete.

Litšebeletso tsa XKH

XKH e fana ka ts'ehetso e felletseng bakeng sa 6-inch conductive monocrystalline SiC ho polycrystalline SiC composite substrate, e koahelang R&D ho tlhahiso ea bongata:

1.Customization: Fetola botenya ba monocrystalline layer (5–100 μm), mahloriso a doping (1e15–1e19 cm⁻³), le mokhoa oa kristale (4H/6H-SiC) ho fihlela litlhoko tse fapaneng tsa lisebelisoa.

2.Wafer Processing: Phepelo e ngata ea li-substrates tsa 6-inch tse nang le lits'ebeletso tsa ho fokotsa mokokotlo le lits'ebeletso tsa metallization bakeng sa ho kopanya plug-and-play.

3.Technical Validation: E kenyelletsa tlhahlobo ea crystallinity ea XRD, tlhahlobo ea phello ea Holo, le tekanyo ea ho hanyetsa mocheso ho potlakisa litlhoko tsa thepa.

4.Rapid Prototyping: 2- 4-inch sampuli (mokhoa o tšoanang) bakeng sa mekhatlo ea lipatlisiso ho potlakisa lipotoloho tsa nts'etsopele.

5.Tlhahlobo ea ho hloleha le ho ntlafatsa: Litharollo tsa boemo ba lisebelisoa bakeng sa mathata a ho sebetsana le mathata (mohlala, bofokoli ba epitaxial layer).

Sepheo sa rona ke ho theha 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e le tharollo e ratoang ea litšenyehelo bakeng sa lisebelisoa tsa motlakase tsa SiC, tse fanang ka tšehetso ea ho qetela ho tloha ho prototyping ho isa tlhahiso ea molumo.

Qetello

SiC ea 6-inch conductive monocrystalline SiC holim'a polycrystalline SiC composite substrate e finyella tekanyo e kholo pakeng tsa ts'ebetso le litšenyehelo ka sebopeho sa eona se secha sa mono/polycrystalline hybrid. Ha likoloi tsa motlakase li ntse li ata le tsoelo-pele ea indasteri ea 4.0, karoloana ena e fana ka motheo o tšepahalang oa lisebelisoa tsa motlakase tsa moloko o latelang. XKH e amohela litšebelisano-'moho ho tsoela pele ho hlahloba bokhoni ba theknoloji ea SiC.