150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

Tlhaloso e Khutšoanyane:

Lintlha tsohle tse ka holimo ke litlhaloso tse nepahetseng tsa likristale tsa safire. Ts'ebetso e ntle haholo ea kristale ea safire e etsa hore e sebelisoe haholo libakeng tse phahameng tsa theknoloji. Ka nts'etsopele e potlakileng ea indasteri ea LED, tlhoko ea lisebelisoa tsa kristale ea safire e ntse e eketseha.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Lisebelisoa

Likopo tsa 6-inch sapphire wafers li kenyelletsa:

1. Tlhahiso ea LED: sephaphatha sa safire se ka sebelisoa e le substrate ea lisebelisoa tsa LED, 'me boima ba eona le conductivity ea mocheso li ka ntlafatsa botsitso le bophelo ba tšebeletso ea lisebelisoa tsa LED.

2. Ho etsa laser: Sapphire wafer e ka boela ea sebelisoa e le substrate ea laser, ho thusa ho ntlafatsa ts'ebetso ea laser le ho lelefatsa bophelo ba tšebeletso.

3. Tlhahiso ea semiconductor: Li-wafers tsa Sapphire li sebelisoa haholo ha ho etsoa lisebelisoa tsa elektronike le tsa optoelectronic, ho akarelletsa le optical synthesis, lisele tsa letsatsi, lisebelisoa tsa elektronike tse phahameng-frequency, joalo-joalo.

4. Lisebelisoa tse ling: Sephaphatha sa Sapphire se ka boela sa sebelisoa ho etsa skrine ea ho ama, lisebelisoa tsa optical, lisele tse tšesaane tsa mahlaseli a letsatsi le lihlahisoa tse ling tsa theknoloji e phahameng.

Tlhaloso

Lintho tse bonahalang	Bohloeki bo phahameng ba kristale e le 'ngoe ea Al2O3, sephaphatha sa safire.
Boemo	150 limilimithara +/- 0.05 limilimithara, 6 inch
Botenya	1300 +/- 25 um
Boitloaelo	C sefofane (0001) theoha M (1-100) sefofane 0.2 +/- 0.05 degree
Boemo ba mantlha bo bataletseng	Sefofane +/- 1 degree
Bolelele ba pele bo bataletseng	47.5 limilimithara +/- 1 limilimithara
Kakaretso ea Botenya (TTV)	<20 um
Inamela	<25 um
Warp	<25 um
Mocheso oa Katoloso ea Mocheso	6.66 x 10-6 / °C e bapileng le axis ea C, 5 x 10-6 /°C perpendicular to C axis
Matla a Dielectric	4.8 x 105 V/cm
Dielectric Constant	11.5 (1 MHz) hammoho le axis ea C, 9.3 (1 MHz) ho ea ho axis ea C
Dielectric Loss Tangent (aka dissipation factor)	ka tlase ho 1 x 10-4
Thermal Conductivity	40 W/(mK) ho 20℃
Ho benya	lehlakore le le leng le bentšitsoeng (SSP) kapa mahlakore a mabeli a bentšitsoeng (DSP) Ra <0.5 nm (ka AFM). Lehlakore le ka morao la sephaphatha sa SSP e ne e le mobu o motle ho Ra = 0.8 - 1.2 um.
Phetiso	88% +/-1 % @460 nm