Li-wafer tsa SiC tsa Silicon Carbide tse 6 tsa lisenthimithara tse 150 tsa mofuta oa 4H-N bakeng sa Patlisiso ea Tlhahiso ea MOS kapa SBD le sehlopha sa Dummy
Masimo a Kopo
Karolo e nyenyane ea kristale ea silicon carbide ea lisenthimithara tse 6 e bapala karolo ea bohlokoa liindastering tse ngata. Ea pele, e sebelisoa haholo indastering ea semiconductor bakeng sa ho etsa lisebelisoa tsa elektroniki tse matla haholo tse kang li-transistors tsa motlakase, lipotoloho tse kopantsoeng le li-module tsa motlakase. Ho tsamaisa mocheso ka matla le ho hanyetsa mocheso o phahameng ho nolofalletsa ho qhala ha mocheso hamolemo, e leng se fellang ka katleho e ntlafetseng le ts'epo. Ea bobeli, li-wafer tsa silicon carbide li bohlokoa masimong a lipatlisiso bakeng sa nts'etsopele ea thepa le lisebelisoa tse ncha. Ho feta moo, wafer ea silicon carbide e fumana lits'ebetso tse pharaletseng tšimong ea optoelectronics, ho kenyeletsoa le tlhahiso ea li-LED le li-diode tsa laser.
Litlhaloso tsa Sehlahisoa
Karolo e le 'ngoe ea kristale ea silicon carbide ea lisenthimithara tse 6 e na le bophara ba lisenthimithara tse 6 (hoo e ka bang 152.4 mm). Ho ba thata ha bokaholimo ke Ra < 0.5 nm, 'me botenya ke 600 ± 25 μm. Karolo e ka fetoloa ka mokhoa oa ho tsamaisa motlakase oa mofuta oa N kapa oa P, ho latela litlhoko tsa bareki. Ho feta moo, e bonts'a botsitso bo ikhethang ba mechini, e khonang ho mamella khatello le ho thothomela.
| Bophara | 150±2.0mm(6inch) | ||||
| Botenya | 350 μm±25μm | ||||
| Boikutlo | Mothating: <0001>±0.5° | Axis e timang：4.0° ho ea ho 1120±0.5° | |||
| Mofuta oa Polytype | 4H | ||||
| Ho hanyetsa (Ω·cm) | 4H-N | 0.015~0.028 Ω·cm/0.015~0.025ohm·cm | |||
| 4/6H-SI | >1E5 | ||||
| Tsela ea mantlha ea ho shebana le bataletse | {10-10}±5.0° | ||||
| Bolelele bo bataletseng ba mantlha (mm) | 47.5 mm±2.5 mm | ||||
| Moeli | Chamfer | ||||
| TTV/Seqha/Sefuba (um) | ≤15 /≤40 /≤60 | ||||
| AFM Front (Si-face) | Ra≤1 nm ea Poland | ||||
| CMP Ra≤0.5 nm | |||||
| LTV | ≤3μm (10mm * 10mm) | ≤5μm (10mm * 10mm) | ≤10μm (10mm * 10mm) | ||
| TTV | ≤5μm | ≤10μm | ≤15μm | ||
| Letlalo/mapetso/mapetso/tšilafalo/matheba/maqeba a lamunu | Ha ho letho | Ha ho letho | Ha ho letho | ||
| li-indent | Ha ho letho | Ha ho letho | Ha ho letho | ||
Substrate ea kristale e le 'ngoe ea silicon carbide ea lisenthimithara tse 6 ke thepa e sebetsang hantle e sebelisoang haholo indastering ea semiconductor, lipatlisiso, le li-optoelectronics. E fana ka conductivity e ntle ea mocheso, botsitso ba mechini, le khanyetso ea mocheso o phahameng, e leng se etsang hore e lokele ho etsoa ha lisebelisoa tsa elektroniki tse matla haholo le lipatlisiso tse ncha tsa thepa. Re fana ka litlhaloso tse fapaneng le likhetho tsa ho iketsetsa ho fihlela litlhoko tse fapaneng tsa bareki.Ikopanye le rona bakeng sa lintlha tse ling mabapi le li-wafer tsa silicon carbide!
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