6inch 150mm Silicon Carbide SiC Wafers 4H-N mofuta oa MOS kapa Lipatlisiso tsa Tlhahiso ea SBD le sehlopha sa Dummy

6inch 150mm Silicon Carbide SiC Wafers 4H-N mofuta oa MOS kapa SBD Production Research le Dummy grade Featured Image

Tlhaloso e Khutšoanyane:

The 6-inch silicon carbide single crystal substrate ke thepa e sebetsang hantle e nang le thepa e ntle ea 'mele le ea lik'hemik'hale. E entsoe ka lisebelisoa tse phahameng tsa silicon carbide single crystal, e bonts'a conductivity e phahameng ea mocheso, botsitso ba mochine le ho hanyetsa mocheso o phahameng. Substrate ena, e entsoeng ka mekhoa e nepahetseng ea tlhahiso le lisebelisoa tsa boleng bo phahameng, e fetohile thepa e ratoang bakeng sa ho etsa lisebelisoa tsa elektronike tse sebetsang hantle haholo likarolong tse sa tšoaneng.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Libaka tsa Kopo

6-inch silicon carbide single crystal substrate e bapala karolo ea bohlokoa liindastering tse ngata. Taba ea pele, e sebelisoa haholo indastering ea semiconductor bakeng sa ho etsa lisebelisoa tsa elektroniki tse matla haholo joalo ka li-transistors tsa motlakase, li-circuits tse kopaneng le li-module tsa motlakase. Ts'ebetso ea eona e phahameng ea mocheso le ho hanyetsa mocheso o phahameng ho etsa hore ho be bonolo ho senya mocheso, e leng se etsang hore ho be le ts'ebetso e ntlafetseng le ho tšepahala. Taba ea bobeli, li-wafers tsa silicon carbide li bohlokoa mafapheng a lipatlisiso bakeng sa nts'etsopele ea lisebelisoa le lisebelisoa tse ncha. Ho feta moo, silicon carbide wafer e fumana lits'ebetso tse ngata lefapheng la optoelectronics, ho kenyeletsoa tlhahiso ea li-LED le diode tsa laser.

Litlhaloso tsa Sehlahisoa

The 6-inch silicon carbide single crystal substrate e na le bophara ba lisenthimithara tse 6 (hoo e ka bang 152.4 mm). The ka holimo roughness ke Ra <0.5 nm, le botenya ke 600 ± 25 μm. Substrate e ka etsoa ka mokhoa oa mofuta oa N kapa oa P, ho latela litlhoko tsa bareki. Ho feta moo, e bonts'a botsitso bo ikhethang ba mochini, bo khonang ho mamella khatello le ho thothomela.

Diameter		150±2.0mm (6inch)
Botenya		350 μm±25μm
Boitloaelo		Ka lehlakoreng le leng: <0001> ± 0.5°		Off axis: 4.0 ° ho 1120±0.5 °
Polytype		4H
Ho hanyetsa(Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Boemo ba mantlha bo bataletseng		{10-10}±5.0°
Bolelele ba sephara ba mantlha (mm)		47.5 mm± 2.5 limilimithara
Qetello		Chamfer
TTV / Bow / Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-face)		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Lekhapetla la lamunu/likoti/mapetso/tšilafatso/matheba/li-striations		Ha ho letho	Ha ho letho		Ha ho letho
indents		Ha ho letho	Ha ho letho		Ha ho letho

6-inch silicon carbide single crystal substrate ke thepa e sebetsang hantle haholo e sebelisoang haholo indastering ea semiconductor, lipatlisiso, andoptoelectronics. E fana ka conductivity e babatsehang ea mocheso, botsitso ba mochine, le ho hanyetsa mocheso o phahameng, ho etsa hore e loketse ho etsoa ha lisebelisoa tsa elektronike tse matla le lipatlisiso tse ncha. Re fana ka litlhaloso tse fapaneng le likhetho tsa Customize ho fihlela litlhoko tse fapaneng tsa bareki.Ikopanye le rona bakeng sa lintlha tse ling mabapi le li-wafers tsa silicon carbide!