6inch GaN-On-Sapphire
150mm 6inch GaN hodima Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer
Sefaha sa sapphire sa lisenthimithara tse 6 ke thepa ea semiconductor ea boleng bo holimo e nang le mekhahlelo ea gallium nitride (GaN) e holisitsoeng holim'a substrate ea sapphire. Thepa ena e na le thepa e ntle ea ho tsamaisa thepa ea elektroniki 'me e loketse ho etsa lisebelisoa tsa semiconductor tse matla haholo le tse maqhubu a phahameng.
Mokhoa oa tlhahiso: Ts'ebetso ea tlhahiso e kenyelletsa ho holisa mekhahlelo ea GaN holim'a substrate ea safire ho sebelisoa mekhoa e tsoetseng pele joalo ka metal-organic chemical vapor deposition (MOCVD) kapa molecular beam epitaxy (MBE). Ts'ebetso ea ho beha e etsoa tlas'a maemo a laoloang ho netefatsa boleng bo holimo ba kristale le filimi e ts'oanang.
Ditshebediso tsa GaN-On-Sapphire tsa 6inch: Di-chip tsa sapphire tsa 6-inch di sebediswa haholo dipuisanong tsa microwave, ditsamaisong tsa radar, theknoloji ya waelese le di-optoelectronics.
Tse ling tsa lits'ebetso tse tloaelehileng li kenyelletsa
1. Seholisa-motlakase sa matla sa Rf
2. Indasteri ea mabone a LED
3. Lisebelisoa tsa puisano tsa marang-rang a se nang mohala
4. Lisebelisoa tsa elektroniki tikolohong e nang le mocheso o phahameng
5. Lisebelisoa tsa optoelectronic
Litlhaloso tsa sehlahisoa
- Boholo: Bophara ba substrate ke lisenthimithara tse 6 (hoo e ka bang 150 mm).
- Boleng ba bokaholimo: Bokaholimo bo bentšitsoe hantle ho fana ka boleng bo botle ba seipone.
- Botenya: Botenya ba lera la GaN bo ka fetoloa ho latela litlhoko tse itseng.
- Sephutheloana: Substrate e pakiloe ka hloko ka thepa e thibelang ho fetoha ha mocheso ho thibela tšenyo nakong ea lipalangoang.
- Meeli ea ho beha: Substrate e na le meeli e itseng ea ho beha e nolofalletsang ho hokahanya le ho sebetsa nakong ea ho lokisa sesebelisoa.
- Liparamente tse ling: Liparamente tse itseng tse kang botenya, ho hanyetsa le ho tsepamisa maikutlo ho ka fetoloa ho latela litlhoko tsa bareki.
Ka thepa ea tsona e ntle ea thepa le lits'ebetso tse fapaneng, li-wafer tsa sapphire substrate tsa lisenthimithara tse 6 ke khetho e tšepahalang bakeng sa nts'etsopele ea lisebelisoa tsa semiconductor tse sebetsang hantle liindastering tse fapaneng.
| Sebaka se ka tlas'a lefatše | 6” 1mm <111> p-mofuta Si | 6” 1mm <111> p-mofuta Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Seqha | +/-45um | +/-45um |
| Ho petsoha | <5mm | <5mm |
| BV e otlolohileng | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Sekoahelo sa Insitu SiN | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Ho tsamaea | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sekwere (<2%) | <330ohm/sekwere (<2%) |
Setšoantšo se qaqileng
