8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
Tlhaloso ea 200mm 8inch SiC Substrate
Boholo: 8inch;
Boima: 200mm± 0.2;
Botenya: 500um± 25;
Sebaka sa Bokaholimo: 4 ho ea [11-20] ± 0.5 °;
Notch orientation:[1-100]±1°;
Notch botebo: 1±0.25mm;
Micropipe: <1cm2;
Lipoleiti tsa Hex: Ha ho Lumelloa;
Ho hanyetsa: 0.015 ~ 0.028Ω;
EPD: <8000cm2;
TED: <6000cm2
BPD: <2000cm2
TSD: <1000cm2
SF: sebaka<1%
TTV≤15um
Warp≤40um
Bow≤25um
Libaka tsa Poly: ≤5%;
Scratch: <5 le Cumulative Length< 1 Wafer Diameter;
Li-Chips/Indents: Ha ho na tumello D> 0.5mm Bophara le Botebo;
Mapetso: Ha ho letho;
Stain: Ha ho letho
Moeli oa Wafer: Chamfer;
Qetello ea sefahleho: Sepolishe sa Mahlakore a Habeli, Si Face CMP;
Ho paka: Multi-wafer Cassette Kapa Single Wafer Container;
Mathata a hajoale a ho lokisoa ha likristale tse kholo tsa 200mm 4H-SiC
1) Tokiso ea likristale tsa peo tsa boleng bo holimo tsa 200mm 4H-SiC;
2) Tšimo e kholo ea boholo ba mocheso o sa ts'oaneng le taolo ea ts'ebetso ea nucleation;
3) Ts'ebetso e ntle ea lipalangoang le phetoho ea likarolo tsa khase lits'ebetsong tse kholo tsa kholo ea kristale;
4) Ho phatloha ha kristale le ho ata ha sekoli ho bakoang ke keketseho e kholo ea khatello ea mocheso.
Ho hlola liqholotso tsena le ho fumana tharollo ea boleng bo holimo ea 200mm SiC e hlahisitsoe:
Mabapi le ho lokisoa ha kristale ea peo ea 200mm, tšimo e loketseng ea mocheso oa tšimo, le kopano e ntseng e eketseha e ile ea ithutoa 'me e etselitsoe ho ela hloko boleng ba kristale le boholo bo ntseng bo eketseha; Ho qala ka 150mm SiC se:d kristale, etsa peō kristale iteration ho butle-butle ho atolosa SiC crystasize ho fihlela e fihla 200mm; Ka kholo ea kristale e mengata le processiig, butle-butle ntlafatsa boleng ba kristale sebakeng se holang sa kristale, le ho ntlafatsa boleng ba likristale tsa peo ea 200mm.
Mabapi le 200mm conductive crystal le substrate lokisetsa, lipatlisiso li ntlafalitse mocheso oa mocheso le moralo oa tšimo bakeng sa kholo e kholo ea kristale, ho tsamaisa kholo ea kristale ea SiC ea 200mm, le ho laola ho tšoana ha doping. Ka mor'a ho sebetsa ka thata le ho bōptjoa ha kristale, ho ile ha fumanoa ingot ea 8-inchelectricaly conductive 4H-SiC e nang le bophara bo tloaelehileng. Kamora ho seha, ho sila, ho bentša, ho sebetsa ho fumana liphaephe tsa SiC 200mm ka botenya ba 525um kapa joalo.