8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya

Tlhaloso e Khutšoanyane:

Shanghai Xinkehui Tech. Co., Ltd e fana ka khetho e ntle ka ho fetesisa le litheko tsa li-wafers tsa boleng bo holimo tsa silicon carbide le li-substrates tse fihlang ho 8inch tse nang le mefuta ea N- le semi-insulating. Likhamphani tse nyane le tse kholo tsa lisebelisoa tsa semiconductor le li-labs tsa lipatlisiso li sebelisoa lefatšeng ka bophara 'me li itšetleha ka liphaephe tsa rona tsa silicone carbide.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tlhaloso ea 200mm 8inch SiC Substrate

Boholo: 8inch;

Boima: 200mm± 0.2;

Botenya: 500um± 25;

Sebaka sa Bokaholimo: 4 ho ea [11-20] ± 0.5 °;

Notch orientation:[1-100]±1°;

Notch botebo: 1±0.25mm;

Micropipe: <1cm2;

Lipoleiti tsa Hex: Ha ho Lumelloa;

Ho hanyetsa: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: sebaka<1%

TTV≤15um

Warp≤40um

Bow≤25um

Libaka tsa Poly: ≤5%;

Scratch: <5 le Cumulative Length< 1 Wafer Diameter;

Li-Chips/Indents: Ha ho na tumello D> 0.5mm Bophara le Botebo;

Mapetso: Ha ho letho;

Stain: Ha ho letho

Moeli oa Wafer: Chamfer;

Qetello ea sefahleho: Sepolishe sa Mahlakore a Habeli, Si Face CMP;

Ho paka: Multi-wafer Cassette Kapa Single Wafer Container;

Mathata a hajoale a ho lokisoa ha likristale tse kholo tsa 200mm 4H-SiC

1) Tokiso ea likristale tsa peo tsa boleng bo holimo tsa 200mm 4H-SiC;

2) Tšimo e kholo ea boholo ba mocheso e sa ts'oaneng le taolo ea ts'ebetso ea nucleation;

3) Ts'ebetso e ntle ea lipalangoang le phetoho ea likarolo tsa khase lits'ebetsong tse kholo tsa kholo ea kristale;

4) Ho phatloha ha kristale le ho ata ha sekoli ho bakoang ke keketseho e kholo ea khatello ea mocheso.

Ho hlola liqholotso tsena le ho fumana tharollo ea boleng bo holimo ea 200mm SiC e hlahisitsoe:

Mabapi le ho lokisoa ha kristale ea peo ea 200mm, tšimo e loketseng ea mocheso oa tšimo, le kopano e ntseng e eketseha e ile ea ithutoa 'me e etselitsoe ho ela hloko boleng ba kristale le boholo bo ntseng bo eketseha; Ho qala ka 150mm SiC se:d kristale, etsa peō kristale iteration ho butle-butle ho atolosa SiC crystasize ho fihlela e fihla 200mm; Ka kholo ea kristale e mengata le processiig, butle-butle ntlafatsa boleng ba kristale sebakeng se holang sa kristale, le ho ntlafatsa boleng ba likristale tsa peo ea 200mm.

Mabapi le 200mm conductive crystal le substrate lokisetsa, lipatlisiso li ntlafalitse mocheso oa mocheso le moralo oa tšimo bakeng sa kholo e kholo ea kristale, ho tsamaisa kholo ea kristale ea SiC ea 200mm, le ho laola ho tšoana ha doping. Ka mor'a ho sebetsa ka thata le ho bōptjoa ha kristale, ho ile ha fumanoa ingot ea 8-inchelectricaly conductive 4H-SiC e nang le bophara bo tloaelehileng. Kamora ho seha, ho sila, ho bentša, ho sebetsa ho fumana liphaephe tsa SiC 200mm ka botenya ba 525um kapa joalo.