Substrate ea Peo ea SiC ea Mofuta oa N o Ikhethileng Dia153/155mm Bakeng sa Lisebelisoa tsa Elektroniki tsa Matla

Substrate ea Peo ea SiC ea Mofuta oa N o Ikhethileng Dia153/155mm Bakeng sa Elektroniki ea Matla Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Li-substrate tsa peo ea Silicon Carbide (SiC) li sebetsa e le thepa ea motheo bakeng sa li-semiconductor tsa moloko oa boraro, tse khetholloang ka ho tsamaisa ha tsona mocheso o phahameng ka ho fetisisa, matla a motlakase a senyehang ka ho fetisisa, le ho tsamaea ha li-elektrone tse ngata. Litšobotsi tsena li etsa hore li be tsa bohlokoa bakeng sa lisebelisoa tsa motlakase, lisebelisoa tsa RF, likoloi tsa motlakase (EV), le lits'ebetso tsa matla a tsosolositsoeng. XKH e ikhethile ho R&D le tlhahiso ea li-substrate tsa peo ea SiC tsa boleng bo holimo, e sebelisa mekhoa e tsoetseng pele ea kholo ea kristale joalo ka Physical Vapor Transport (PVT) le High-Temperature Chemical Vapor Deposition (HTCVD) ho netefatsa boleng ba kristale bo etellang pele indastering.

Romella imeile ho rona

Likaroloana

Hlahisa

XKH e fana ka di-substrate tsa peo ya SiC tsa di-inch tse 4, di-inch tse 6, le di-inch tse 8 tse nang le doping ya mofuta wa N/P e ka fetolwang, e fihlellang maemo a ho hanyetsa a 0.01-0.1 Ω·cm le ho teteana ha dislocation ka tlase ho 500 cm⁻², e leng se etsang hore di be ntle bakeng sa ho etsa di-MOSFET, Schottky Barrier Diodes (SBDs), le di-IGBT. Tshebetso ya rona ya tlhahiso e kopantsweng ka ho otloloha e akaretsa kgolo ya kristale, ho seha di-wafer, ho di bentsha le ho di hlahloba, ka bokgoni ba tlhahiso ba kgwedi le kgwedi bo fetang di-wafer tse 5,000 ho fihlela ditlhoko tse fapaneng tsa ditheo tsa dipatlisiso, bahlahisi ba di-semiconductor le dikhamphani tsa matla a ntjhafatswang.

Ho phaella moo, re fana ka ditharollo tse ikgethileng, ho kenyeletswa:

Ho iketsetsa tataiso ea kristale (4H-SiC, 6H-SiC)

Meriana e khethehileng ea doping (Aluminium, Naetrojene, Boron, jj.)

Ho bentša ho boreleli haholo (Ra < 0.5 nm)

XKH e tšehetsa ts'ebetso e thehiloeng ho sampole, lipuisano tsa tekheniki, le prototyping ea sehlopha se senyenyane ho fana ka litharollo tse ntlafalitsoeng tsa substrate tsa SiC.

Litekanyetso tsa tekheniki

Sejana sa peo sa silicon carbide
Mofuta oa Polytype	4H
Phoso ea tataiso ea bokaholimo	4°ho ea ho<11-20>±0.5º
Ho hanyetsa	ho iketsetsa mokhoa oa ho iketsetsa
Bophara	205±0.5mm
Botenya	600±50μm
Ho ba le makukuno	CMP,Ra≤0.2nm
Botebo ba Micropipe	≤1 ka 'ngoe/cm2
Mengoapo	≤5, Bolelele bohle ≤2 * Bophara
Li-chips/li-indent tsa Edge	Ha ho letho
Ho tšoaea ka laser ka pele	Ha ho letho
Mengoapo	≤2, Bolelele bohle ≤Bophara
Li-chips/li-indent tsa Edge	Ha ho letho
Libaka tsa mefuta e mengata	Ha ho letho
Ho tšoaea ka laser ea morao	1mm (ho tloha pheletsong e ka holimo)
Moeli	Chamfer
Sephutheloana	Khasete ea li-wafer tse ngata

Li-substrate tsa Peo ea SiC - Litšobotsi tsa Bohlokoa

1. Thepa e Ikhethang ea 'Mele

· Ho tsamaisa mocheso ka matla a phahameng (~490 W/m·K), ho feta silicon (Si) le gallium arsenide (GaAs) haholo, ho etsa hore e be ntle bakeng sa ho phodisa sesebediswa se nang le matla a mangata.

· Matla a tšimo ea ho senyeha (~3 MV/cm), a nolofalletsang ts'ebetso e tsitsitseng tlas'a maemo a motlakase o phahameng, e leng sa bohlokoa bakeng sa li-inverter tsa EV le li-module tsa motlakase tsa indasteri.

· Sekheo se seholo sa leqhubu (3.2 eV), se fokotsang maqhubu a ho dutla ha mocheso o phahameng le ho ntlafatsa ts'epo ea sesebelisoa.

2. Boleng bo Phahameng ba Crystalline

· Theknoloji ea kholo ea PVT + HTCVD e kopanyang e fokotsa likoli tsa micropipe, e boloka bongata ba ho falla ha liphaephe bo le ka tlase ho 500 cm⁻².

· Seqha/sefuba sa wafer < 10 μm le ho rarahana ha bokaholimo Ra < 0.5 nm, ho netefatsa hore e tsamaellana le lithography e nepahetseng haholo le lits'ebetso tsa ho beha filimi e tšesaane.

3. Likhetho tse fapaneng tsa ho sebelisa lithethefatsi tse tahang

·Mofuta wa N (E nang le naetrojene): Resistivity e tlase (0.01-0.02 Ω·cm), e ntlafaditswe bakeng sa disebediswa tsa RF tse nang le maqhubu a phahameng.

· Mofuta oa P (O nang le Aluminium): E loketse li-MOSFET tse matla le li-IGBT, e ntlafatsang motsamao oa carrier.

· SiC e thibelang mocheso ka semi-insulating (e nang le Vanadium): Resistivity > 10⁵ Ω·cm, e etselitsoeng li-module tsa 5G RF front-end.

4. Ho Tsitsisa Tikoloho

· Ho hanyetsa mocheso o phahameng (>1600°C) le ho thatafala ha mahlaseli, ho loketse lifofane, lisebelisoa tsa nyutlelie, le libaka tse ling tse feteletseng.

Li-substrate tsa Peo ea SiC - Litšebeliso tsa Motheo

1. Matla a Elektroniki

· Likoloi tsa Motlakase (li-EV): Li sebelisoa ka har'a li-charger tse ka hare ho sekepe (OBC) le li-inverter ho ntlafatsa ts'ebetso le ho fokotsa litlhoko tsa taolo ea mocheso.

· Mekhoa ea Matla a Liindasteri: E ntlafatsa li-inverter tsa photovoltaic le li-grid tse bohlale, e fihlella katleho ea phetoho ea matla a fetang 99%.

2. Lisebelisoa tsa RF

· Liteishene tsa Motheo tsa 5G: Li-substrate tsa SiC tse thibelang mocheso ka semi-insulation li nolofalletsa li-amplifier tsa matla a GaN-on-SiC RF, tse tšehetsang phetiso ea lets'oao la maqhubu a phahameng le matla a phahameng.

Lipuisano tsa Sathelaete: Litšobotsi tsa tahlehelo e tlase li etsa hore e tšoanelehe bakeng sa lisebelisoa tsa maqhubu a millimeter.

3. Polokelo ea Matla a Nchafalitsoeng le Matla

· Matla a Letsatsi: Li-MOSFET tsa SiC li eketsa katleho ea phetoho ea DC-AC ha ka nako e ts'oanang li fokotsa litšenyehelo tsa sistimi.

· Mekhoa ea ho Boloka Matla (ESS): E ntlafatsa li-converter tsa mahlakore a mabeli 'me e eketsa nako ea bophelo ba betri.

4. Tšireletso le Lifofane

· Mekhoa ea Radar: Lisebelisoa tsa SiC tse matla haholo li sebelisoa liradar tsa AESA (Active Electronically Scanned Array).

· Taolo ea Matla a Sefofane sa Sefofane: Li-substrate tsa SiC tse hanelang mahlaseli li bohlokoa bakeng sa mesebetsi ea sepakapaka se tebileng.

5. Patlisiso le Mahlale a Hlahang

· Khomphutha ea Quantum: SiC e hloekileng haholo e nolofalletsa lipatlisiso tsa spin qubit.

· Li-sensor tsa Mocheso o Phahameng: Li sebelisoa ho hlahlobisiseng oli le ho lekola li-reactor tsa nyutlelie.

Li-substrate tsa Peo ea SiC - Litšebeletso tsa XKH

1. Melemo ea Ketane ea Phepelo

· Tlhahiso e kopantsoeng ka ho otloloha: Taolo e felletseng ho tloha phofo ea SiC e hloekileng haholo ho ea ho li-wafer tse felileng, ho netefatsa linako tsa ho etella pele tsa libeke tse 4-6 bakeng sa lihlahisoa tse tloaelehileng.

· Tlholisano ea litšenyehelo: Meruo ea boholo e nolofalletsa litheko tse tlase ka 15-20% ho feta bahlolisani, ka tšehetso ea Litumellano tsa Nako e Telele (LTA).

2. Litšebeletso tsa ho Etsa Lintho ka Bohona

· Ho shebana le kristale: 4H-SiC (e tloaelehileng) kapa 6H-SiC (lits'ebetso tse ikhethileng).

· Ntlafatso ea doping: Thepa e etselitsoeng mofuta oa N/mofuta oa P/hanyane e thibelang mocheso.

· Ho bentša ho tsoetseng pele: Ho bentša ka CMP le kalafo ea bokaholimo bo itokiselitseng epi (Ra < 0.3 nm).

3. Tšehetso ea Tekheniki

· Teko ea sampole ea mahala: E kenyelletsa litlaleho tsa XRD, AFM, le tekanyo ea phello ea Hall.

· Thuso ea ho etsisa sesebelisoa: E tšehetsa kholo ea epitaxial le ntlafatso ea moralo oa sesebelisoa.

4. Karabelo e Potlakileng

· Prototype ea bophahamo bo tlase: Odara e fokolang ea li-wafer tse 10, tse tlisoang nakong ea libeke tse 3.

· Tsamaiso ea lefats'e ka bophara: Tšebelisano-'moho le DHL le FedEx bakeng sa ho isa thepa ka ntlo le ntlo.

5. Netefatso ea Boleng

· Tlhahlobo e felletseng ea ts'ebetso: E akaretsa topography ea X-ray (XRT) le tlhahlobo ea bongata ba liphoso.

· Litifikeiti tsa machaba: Li lumellana le maemo a IATF 16949 (a likoloi) le a AEC-Q101.

Qetello

Di-substrate tsa peo ya XKH tsa SiC di ipabola ka boleng ba kristale, botsitso ba ketane ya phepelo, le ho tenyetseha ha ho etswa, di sebeletsa di-elektroniki tsa motlakase, puisano ya 5G, matla a ntjhafatswang, le mahlale a tshireletso. Re tswela pele ho ntshetsa pele theknoloji ya tlhahiso ya bongata ya SiC ya di-inch tse 8 ho kganna indasteri ya di-semiconductor ya moloko wa boraro pele.

E fetileng: Poleiti/terei ea ceramic ea SiC bakeng sa sehokelo sa wafer sa lisenthimithara tse 4 sa lisenthimithara tse 6 bakeng sa ICP

E 'ngoe: Li-substrate tsa kristale tsa peo ea SiC tse etselitsoeng motho ka mong Dia 205/203/208 4H-N Type bakeng sa puisano ea mahlo