Li-wafer tsa Epitaxial tsa GaN-on-SiC tse Ikhethileng (100mm, 150mm) – Likhetho tse 'maloa tsa Substrate ea SiC (4H-N, HPSI, 4H/6H-P)
Likaroloana
● Botenya ba Lera la Epitaxial: E ka fetoloa ho tloha1.0 µmho3.5 µm, e ntlafalitsoe bakeng sa matla a phahameng le ts'ebetso ea maqhubu.
●Likhetho tsa Substrate ea SiC: E fumaneha ka di-substrate tse fapaneng tsa SiC, ho kenyeletswa:
- 4H-N: 4H-SiC e nang le naetrojene ea boleng bo holimo bakeng sa lits'ebetso tse sebelisoang khafetsa le tse matla haholo.
- HPSI: SiC e Sireletsang Haholo e Hloekileng Haholo bakeng sa lits'ebetso tse hlokang ho itšehla thajana ka motlakase.
- 4H/6H-P: 4H e tsoakiloeng le 6H-SiC bakeng sa tekano ea bokhoni bo phahameng le ts'epo.
● Boholo ba Wafer: E fumaneha ka100mmle150mmbophara bakeng sa ho tenyetseha ha ho hola le ho kopanya disebediswa.
●Motlakase o Phahameng oa ho Senyeha: GaN ho theknoloji ea SiC e fana ka motlakase o phahameng oa ho senyeha, e nolofalletsang ts'ebetso e matla lits'ebetsong tse nang le matla a mangata.
●Motlakase o Phahameng oa Thermal: Ho tsamaisa mocheso ha SiC ka tlhaho (hoo e ka bang 490 W/m·K) e netefatsa ho qhala ha mocheso hantle bakeng sa lits'ebetso tse sebelisang motlakase o mongata.
Litlhaloso tsa Tekheniki
| Paramethara | Boleng |
| Bophara ba Wafer | 100mm, 150mm |
| Botenya ba Lera la Epitaxial | 1.0 µm – 3.5 µm (e ka fetoloang) |
| Mefuta ea SiC Substrate | 4H-N, HPSI, 4H/6H-P |
| Ho tsamaisa mocheso oa SiC | 490 W/m·K |
| Ho hanyetsa SiC | 4H-N: 10^6 Ω·cm,HPSI: Semi-Insulation,4H/6H-P: 4H/6H e tsoakiloeng |
| Botenya ba Lera la GaN | 1.0 µm – 2.0 µm |
| Ho tsepamisa maikutlo ha GaN Carrier | 10^18 cm^-3 ho isa ho 10^19 cm^-3 (e ka fetoloang) |
| Boleng ba Bokaholimo ba Wafer | RMS e se nang matla: < 1 nm |
| Botebo ba ho se be teng ha sebaka | < 1 x 10^6 cm^-2 |
| Seqha sa Wafer | < 50 µm |
| Bophara ba Wafer | < 5 µm |
| Mocheso o phahameng ka ho fetisisa oa ho sebetsa | 400°C (e tloaelehileng bakeng sa lisebelisoa tsa GaN-on-SiC) |
Likopo
●Elektroniki ea Matla:Li-wafer tsa GaN-on-SiC li fana ka bokgoni bo phahameng le ho qhala mocheso, e leng se etsang hore li be ntle bakeng sa li-amplifier tsa motlakase, lisebelisoa tsa phetoho ea motlakase, le lipotoloho tsa motlakase tse sebelisoang likoloing tsa motlakase, litsamaisong tsa matla a nchafatsoang, le mechini ea indasteri.
●Li-amplifier tsa Matla a RF:Motsoako oa GaN le SiC o phethahetse bakeng sa lits'ebetso tsa RF tse nang le maqhubu a phahameng, tse matla a holimo joalo ka likhokahano tsa mohala, puisano ea sathelaete le litsamaiso tsa radar.
●Sebaka sa Lifofane le Tšireletso:Li-wafer tsena li loketse theknoloji ea lifofane le tšireletso e hlokang lisebelisoa tsa elektroniki tse sebetsang hantle le tsa puisano tse ka sebetsang tlas'a maemo a thata.
●Litšebeliso tsa Likoloi:E loketse litsamaiso tsa motlakase tse sebetsang hantle likoloing tsa motlakase (li-EV), likoloi tse tsoakiloeng (li-HEV), le liteisheneng tsa ho tjhaja, e leng se nolofalletsang phetoho le taolo ea motlakase ka katleho.
●Mekhoa ea Sesole le ea Radar:Li-wafer tsa GaN-on-SiC li sebelisoa litsamaisong tsa radar ka lebaka la bokhoni ba tsona bo phahameng, bokhoni ba ho sebetsana le matla, le ts'ebetso ea mocheso libakeng tse hlokang matla.
●Litšebeliso tsa Maqhubu a Microwave le Millimeter:Bakeng sa litsamaiso tsa puisano tsa moloko o latelang, ho kenyeletsoa le 5G, GaN-on-SiC e fana ka ts'ebetso e ntle ka ho fetisisa maemong a microwave a matla a phahameng le maqhubu a millimeter.
Lipotso le Likarabo
P1: Melemo ea ho sebelisa SiC e le substrate bakeng sa GaN ke efe?
A1:Silicon Carbide (SiC) e fana ka conductivity e phahameng ea mocheso, motlakase o phahameng oa ho senyeha, le matla a mechini ha ho bapisoa le li-substrate tsa setso joalo ka silicon. Sena se etsa hore li-wafer tsa GaN-on-SiC li be ntle bakeng sa lits'ebetso tse matla a holimo, maqhubu a phahameng le mocheso o phahameng. Substrate ea SiC e thusa ho qhala mocheso o hlahisoang ke lisebelisoa tsa GaN, e ntlafatsa ts'epo le ts'ebetso.
P2: Na botenya ba lera la epitaxial bo ka etsoa bakeng sa lits'ebetso tse itseng?
A2:E, botenya ba lera la epitaxial bo ka fetoloa ka har'a mefuta e fapaneng ea1.0 µm ho isa ho 3.5 µm, ho latela ditlhoko tsa matla le maqhubu a kopo ya hao. Re ka fetola botenya ba lera la GaN ho ntlafatsa tshebetso bakeng sa disebediswa tse itseng tse kang di-amplifier tsa matla, ditsamaiso tsa RF, kapa dipotoloho tsa maqhubu a phahameng.
P3: Phapang ke efe pakeng tsa di-substrate tsa 4H-N, HPSI, le 4H/6H-P SiC?
A3:
- 4H-N: 4H-SiC e nang le naetrojene e atisa ho sebelisoa bakeng sa lits'ebetso tse nang le maqhubu a phahameng tse hlokang ts'ebetso e phahameng ea elektroniki.
- HPSI: High-Purity Semi-Insulation SiC e fana ka karohano ea motlakase, e loketseng lits'ebetso tse hlokang ho tsamaisoa ha motlakase hanyane.
- 4H/6H-P: Motsoako oa 4H le 6H-SiC o leka-lekanyang ts'ebetso, o fanang ka motsoako oa bokhoni bo phahameng le ho tiea, o loketseng lits'ebetso tse fapaneng tsa elektroniki tsa motlakase.
P4: Na di-wafer tsena tsa GaN-on-SiC di loketse ditshebediso tse matla jwalo ka dikoloi tsa motlakase le matla a ntjhafatswang?
A4:E, di-wafer tsa GaN-on-SiC di loketse hantle bakeng sa ditshebediso tse nang le matla a maholo jwalo ka dikoloi tsa motlakase, matla a ntjhafatswang, le ditsamaiso tsa diindasteri. Motlakase o phahameng wa ho senyeha, ho tsamaisa mocheso o phahameng, le bokgoni ba ho sebetsana le matla a disebediswa tsa GaN-on-SiC di di nolofalletsa ho sebetsa ka katleho dipotolohong tse hlokang phetoho ya matla le taolo.
P5: Bongata bo tloaelehileng ba dislocation bakeng sa di-wafer tsena ke bofe?
A5:Bongata ba dislocation tsa di-wafer tsena tsa GaN-on-SiC hangata bo< 1 x 10^6 cm^-2, e netefatsang kgolo ya epitaxial ya boleng bo hodimo, e fokotsang diphoso le ho ntlafatsa tshebetso le botshepehi ba sesebediswa.
P6: Na nka kopa boholo bo itseng ba wafer kapa mofuta oa substrate oa SiC?
A6:E, re fana ka boholo ba wafer bo ikhethileng (100mm le 150mm) le mefuta ea substrate ea SiC (4H-N, HPSI, 4H/6H-P) ho fihlela litlhoko tse ikhethileng tsa kopo ea hau. Ka kopo ikopanye le rona bakeng sa likhetho tse ling tsa ho iketsetsa le ho buisana ka litlhoko tsa hau.
P7: Li-wafer tsa GaN-on-SiC li sebetsa joang maemong a feteletseng?
A7:Li-wafer tsa GaN-on-SiC li loketse libaka tse feteletseng ka lebaka la botsitso ba tsona bo phahameng ba mocheso, ts'ebetso e matla haholo, le bokhoni bo botle ba ho qhala mocheso. Li-wafer tsena li sebetsa hantle maemong a mocheso o phahameng, matla a phahameng, le maqhubu a phahameng a atisang ho kopana le lits'ebetsong tsa lifofane, ts'ireletso le indasteri.
Qetello
Li-wafer tsa rona tsa GaN-on-SiC Epitaxial Wafer tse Ikhethileng li kopanya thepa e tsoetseng pele ea GaN le SiC ho fana ka ts'ebetso e phahameng lits'ebetsong tse matla le tse phahameng. Ka likhetho tse ngata tsa substrate tsa SiC le likarolo tse ka fetoloang tsa epitaxial, li-wafer tsena li loketse liindasteri tse hlokang ts'ebetso e phahameng, taolo ea mocheso le ts'epo. Ebang ke bakeng sa lisebelisoa tsa elektroniki tsa motlakase, litsamaiso tsa RF, kapa lits'ebetso tsa ts'ireletso, li-wafer tsa rona tsa GaN-on-SiC li fana ka ts'ebetso le ho tenyetseha hoo u ho hlokang.
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