Li-GaN-on-SiC Epitaxial Wafers (100mm, 150mm) tse ikhethileng - Likhetho tse ngata tsa SiC Substrate (4H-N, HPSI, 4H/6H-P)

GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Likhetho tse ngata tsa SiC Substrate (4H-N, HPSI, 4H/6H-P) Setšoantšo se Felletseng

Tlhaloso e Khutšoanyane:

Li-wafers tsa rona tsa GaN-on-SiC Epitaxial Wafers li fana ka ts'ebetso e phahameng bakeng sa lisebelisoa tsa matla a phahameng, tse phahameng ka ho kopanya thepa e ikhethang ea Gallium Nitride (GaN) le mocheso o matla oa mocheso le matla a mochine.Silicon Carbide (SiC). Li fumaneha ka boholo ba 100mm le 150mm wafer, li-wafer tsena li hahiloe holim'a mefuta e fapaneng ea likhetho tsa SiC substrate, ho kenyeletsoa 4H-N, HPSI, le 4H/6H-P mefuta, e etselitsoeng ho fihlela litlhoko tse khethehileng tsa lisebelisoa tsa motlakase tsa motlakase, li-amplifiers tsa RF, le lisebelisoa tse ling tse tsoetseng pele tsa semiconductor. Ka likarolo tse ikhethileng tsa epitaxial le li-substrates tsa SiC tse ikhethang, li-wafers tsa rona li etselitsoe ho netefatsa ts'ebetso e phahameng, taolo ea mocheso, le ts'epahalo bakeng sa lits'ebetso tse hlokang indasteri.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Likaroloana

● Epitaxial Layer Thickness: Customizable ho tloha1.0 µmho3.5µm, e ntlafalitsoeng bakeng sa matla a holimo le ts'ebetso ea khafetsa.

● Likhetho tsa SiC Substrate: E fumaneha ka likaroloana tse fapaneng tsa SiC, ho kenyelletsa:

4H-N: Boleng bo phahameng ba Nitrogen-doped 4H-SiC bakeng sa lisebelisoa tse phahameng tsa maqhubu, tse matla haholo.
HPSI: High-Purity Semi-Insulating SiC bakeng sa likopo tse hlokang ho itšehla thajana ka motlakase.
4H/6H-P: E tsoakiloeng 4H le 6H-SiC bakeng sa ho leka-lekana ha bokhoni bo phahameng le ho tšepahala.

● Boholo ba Wafer: E fumaneha ho100mmle150 limilimitharadidiameter bakeng sa ho ikamahanya le maemo ho sekala le ho kopanya sesebediswa.

● High Breakdown Voltage: Theknoloji ea GaN ho SiC e fana ka motlakase o phahameng oa ho senyeha, o nolofalletsang ts'ebetso e matla lits'ebetsong tsa matla a phahameng.

● High Thermal Conductivity: SiC's inherent thermal conductivity (hoo e ka bang 490 W/m·K) e etsa bonnete ba hore ho na le mocheso o babatsehang bakeng sa lisebelisoa tse matla haholo.

Litlhaloso tsa Tekheniki

Paramethara	Boleng
Wafer Diameter	100 limilimithara, 150 limilimithara
Epitaxial Layer Thickness	1.0 µm - 3.5 µm (e ka tloaeleha)
Mefuta ea SiC Substrate	4H-N, HPSI, 4H/6H-P
SiC Thermal Conductivity	490 W/m·K
SiC Resistivity	4H-N10^6 Ω·cm,HPSI: Semi-insulating,4H/6H-P: E kopantsoe 4H/6H
Botenya ba Lera la GaN	1.0 µm - 2.0 µm
Mahlohonolo a GaN Carrier	10^18 cm^-3 ho isa ho 10^19 cm^-3 (e ka khonahala)
Wafer Surface Quality	RMS Bokhopo: <1 nm
Dislocation Density	<1 x 10^6 cm^-2
Seqha sa Wafer	<50µm
Bophahamo ba Sephaephe	<5µm
Mocheso o Moholo oa ho sebetsa	400°C (e tloaelehileng bakeng sa lisebelisoa tsa GaN-on-SiC)

Lisebelisoa

●Motlakase oa Motlakase:Li-wafers tsa GaN-on-SiC li fana ka ts'ebetso e phahameng le ho felloa ke mocheso, e leng se etsang hore e be tse loketseng bakeng sa li-amplifiers, lisebelisoa tsa ho fetola matla, le li-circuits tsa motlakase tse sebelisoang likoloing tsa motlakase, lisebelisoa tsa matla a tsosolositsoeng, le mechine ea indasteri.
● RF Power Amplifiers:Motsoako oa GaN le SiC o nepahetse bakeng sa lits'ebetso tsa RF tsa maqhubu a holimo, a matla a phahameng joalo ka likhokahano tsa mehala, likhokahano tsa sathelaete, le lits'ebetso tsa radar.
● Sepakapaka le Tšireletso:Li-wafers tsena li loketse theknoloji ea sefofane le ts'ireletso e hlokang lisebelisoa tsa elektronike tse sebetsang hantle le mekhoa ea puisano e ka sebetsang tlas'a maemo a thata.
● Lisebelisoa tsa Koloi:E loketse litsamaiso tse sebetsang hantle tsa motlakase likoloing tsa motlakase (EVs), likoloi tse nyalisitsoeng (HEVs), le liteishene tsa ho tjhaja, tse nolofalletsang phetolo le taolo e sebetsang hantle.
● Litsamaiso tsa Sesole le Radar:Li-wafers tsa GaN-on-SiC li sebelisoa lits'ebetsong tsa radar bakeng sa ts'ebetso ea tsona e phahameng, bokhoni ba ho sebetsana le matla, le ts'ebetso ea mocheso libakeng tse boima.
● Lisebelisoa tsa Microwave le Millimeter-Wave:Bakeng sa litsamaiso tsa puisano tsa moloko o latelang, ho kenyeletsoa 5G, GaN-on-SiC e fana ka ts'ebetso e nepahetseng maemong a matla a microwave le millimeter-wave ranges.

Q&A

Q1: Melemo ea ho sebelisa SiC joalo ka substrate bakeng sa GaN ke efe?

A1:Silicon Carbide (SiC) e fana ka conductivity e phahameng ea mocheso, motlakase o phahameng oa ho senyeha, le matla a mochine ha a bapisoa le li-substrates tsa setso tse kang silicon. Sena se etsa hore li-wafers tsa GaN-on-SiC e be tse loketseng bakeng sa lisebelisoa tse nang le matla a phahameng, maqhubu a phahameng le mocheso o phahameng. SiC substrate e thusa ho qhala mocheso o hlahisoang ke lisebelisoa tsa GaN, ho ntlafatsa botšepehi le ts'ebetso.

Q2: Na botenya ba epitaxial layer bo ka etsoa bakeng sa lits'ebetso tse ikhethileng?

A2:E, botenya ba epitaxial layer bo ka etsoa ka har'a mefuta e mengata ea1.0 µm ho isa ho 3.5 µm, ho ipapisitsoe le matla le litlhoko tsa khafetsa tsa kopo ea hau. Re ka fetola botenya ba GaN layer ho ntlafatsa ts'ebetso ea lisebelisoa tse ikhethileng joalo ka liamplifiers tsa motlakase, litsamaiso tsa RF, kapa li-circuits tse phahameng haholo.

Q3: Phapano ke efe lipakeng tsa 4H-N, HPSI, le 4H/6H-P SiC substrates?

A3:

4H-N: Nitrogen-doped 4H-SiC e atisa ho sebelisoa bakeng sa lisebelisoa tse phahameng tsa maqhubu tse hlokang ts'ebetso e phahameng ea elektronike.
HPSI: High-Purity Semi-Insulating SiC e fana ka karohano ea motlakase, e loketseng lits'ebetso tse hlokang motlakase o fokolang.
4H/6H-P: Motsoako oa 4H le 6H-SiC o leka-lekaneng ts'ebetso, o fana ka motsoako oa ts'ebetso e phahameng le e matla, e loketseng lisebelisoa tse sa tšoaneng tsa elektronike tsa matla.

Q4: Na li-wafers tsee tsa GaN-on-SiC li loketse lisebelisoa tse matla tse kang likoloi tsa motlakase le matla a tsosolositsoeng?

A4:Ee, li-wafers tsa GaN-on-SiC li loketse lits'ebetso tsa matla a phahameng joalo ka likoloi tsa motlakase, matla a tsosolositsoeng, le lits'ebetso tsa indasteri. Motlakase o phahameng oa ho senya, mocheso o phahameng oa mocheso, le matla a ho sebetsana le matla a lisebelisoa tsa GaN-on-SiC li ba nolofalletsa ho sebetsa ka katleho ho batla ho fetola matla le ho laola lipotoloho.

Q5: Tekanyo e tloaelehileng ea dislocation bakeng sa li-wafers tsee ke efe?

A5:Boima ba dislocation ea li-wafers tsena tsa GaN-on-SiC hangata ke<1 x 10^6 cm^-2, e netefatsang kholo ea boleng bo phahameng ba epitaxial, ho fokotsa mefokolo le ho ntlafatsa ts'ebetso ea lisebelisoa le ho tšepahala.

Q6: Na nka kopa saese e khethehileng ea wafer kapa mofuta oa SiC substrate?

A6:Ee, re fana ka boholo ba li-wafer tse ikhethileng (100mm le 150mm) le mefuta ea SiC substrate (4H-N, HPSI, 4H/6H-P) ho fihlela litlhoko tse ikhethileng tsa kopo ea hau. Ka kopo ikopanye le rona bakeng sa likhetho tse ling tsa ho itlhophisa le ho buisana ka litlhoko tsa hau.

Q7: Li-wafers tsa GaN-on-SiC li sebetsa joang maemong a feteletseng?

A7:Li-wafers tsa GaN-on-SiC li loketse tikoloho e feteletseng ka lebaka la botsitso ba tsona bo phahameng ba mocheso, ho sebetsana le matla a phahameng, le bokhoni bo botle ba ho felisa mocheso. Li-wafers tsena li sebetsa hantle maemong a mocheso o phahameng, matla a holimo, le maemo a maqhubu a phahameng a atisang ho kopana le aerospace, tšireletso le lits'ebetso tsa indasteri.

Qetello

Lisebelisoa tsa rona tsa Customized GaN-on-SiC Epitaxial Wafers li kopanya thepa e tsoetseng pele ea GaN le SiC ho fana ka ts'ebetso e phahameng ka ho fetisisa lits'ebetsong tse matla le tse phahameng. Ka likhetho tse ngata tsa SiC substrate le likarolo tse ka khonehang tsa epitaxial, li-wafers tsena li loketse liindasteri tse hlokang ts'ebetso e phahameng, taolo ea mocheso le ts'epahalo. Ebang ke lisebelisoa tsa motlakase tsa motlakase, litsamaiso tsa RF, kapa lits'ebetso tsa ts'ireletso, li-wafers tsa rona tsa GaN-on-SiC li fana ka ts'ebetso le bonolo tseo u li hlokang.