Li-wafer tsa Epitaxial tsa GaN-on-SiC tse Ikhethileng (100mm, 150mm) – Likhetho tse 'maloa tsa Substrate ea SiC (4H-N, HPSI, 4H/6H-P)

Tlhaloso e Khutšoanyane:

Li-Wafer tsa rona tsa Epitaxial tsa GaN-on-SiC tse Ikhethileng li fana ka ts'ebetso e phahameng bakeng sa lits'ebetso tse matla haholo, tse nang le maqhubu a phahameng ka ho kopanya thepa e ikhethang ea Gallium Nitride (GaN) le conductivity e matla ea mocheso le matla a mechini aSilicon Carbide (SiC). Li fumaneha ka boholo ba wafer ba 100mm le 150mm, li-wafer tsena li hahiloe holim'a mefuta e fapaneng ea likhetho tsa substrate tsa SiC, ho kenyeletsoa mefuta ea 4H-N, HPSI, le 4H/6H-P, tse etselitsoeng ho fihlela litlhoko tse itseng bakeng sa lisebelisoa tsa elektroniki tsa motlakase, li-amplifiers tsa RF, le lisebelisoa tse ling tse tsoetseng pele tsa semiconductor. Ka likarolo tsa epitaxial tse ka fetoloang le li-substrate tse ikhethang tsa SiC, li-wafer tsa rona li etselitsoe ho netefatsa bokhoni bo phahameng, taolo ea mocheso, le ts'epo bakeng sa lits'ebetso tse hlokang matla tsa indasteri.


Likaroloana

Likaroloana

● Botenya ba Lera la Epitaxial: E ka fetoloa ho tloha1.0 µmho3.5 µm, e ntlafalitsoe bakeng sa matla a phahameng le ts'ebetso ea maqhubu.

●Likhetho tsa Substrate ea SiC: E fumaneha ka di-substrate tse fapaneng tsa SiC, ho kenyeletswa:

  • 4H-N: 4H-SiC e nang le naetrojene ea boleng bo holimo bakeng sa lits'ebetso tse sebelisoang khafetsa le tse matla haholo.
  • HPSI: SiC e Sireletsang Haholo e Hloekileng Haholo bakeng sa lits'ebetso tse hlokang ho itšehla thajana ka motlakase.
  • 4H/6H-P: 4H e tsoakiloeng le 6H-SiC bakeng sa tekano ea bokhoni bo phahameng le ts'epo.

● Boholo ba Wafer: E fumaneha ka100mmle150mmbophara bakeng sa ho tenyetseha ha ho hola le ho kopanya disebediswa.

●Motlakase o Phahameng oa ho Senyeha: GaN ho theknoloji ea SiC e fana ka motlakase o phahameng oa ho senyeha, e nolofalletsang ts'ebetso e matla lits'ebetsong tse nang le matla a mangata.

●Motlakase o Phahameng oa Thermal: Ho tsamaisa mocheso ha SiC ka tlhaho (hoo e ka bang 490 W/m·K) e netefatsa ho qhala ha mocheso hantle bakeng sa lits'ebetso tse sebelisang motlakase o mongata.

Litlhaloso tsa Tekheniki

Paramethara

Boleng

Bophara ba Wafer 100mm, 150mm
Botenya ba Lera la Epitaxial 1.0 µm – 3.5 µm (e ka fetoloang)
Mefuta ea SiC Substrate 4H-N, HPSI, 4H/6H-P
Ho tsamaisa mocheso oa SiC 490 W/m·K
Ho hanyetsa SiC 4H-N: 10^6 Ω·cm,HPSI: Semi-Insulation,4H/6H-P: 4H/6H e tsoakiloeng
Botenya ba Lera la GaN 1.0 µm – 2.0 µm
Ho tsepamisa maikutlo ha GaN Carrier 10^18 cm^-3 ho isa ho 10^19 cm^-3 (e ka fetoloang)
Boleng ba Bokaholimo ba Wafer RMS e se nang matla: < 1 nm
Botebo ba ho se be teng ha sebaka < 1 x 10^6 cm^-2
Seqha sa Wafer < 50 µm
Bophara ba Wafer < 5 µm
Mocheso o phahameng ka ho fetisisa oa ho sebetsa 400°C (e tloaelehileng bakeng sa lisebelisoa tsa GaN-on-SiC)

Likopo

●Elektroniki ea Matla:Li-wafer tsa GaN-on-SiC li fana ka bokgoni bo phahameng le ho qhala mocheso, e leng se etsang hore li be ntle bakeng sa li-amplifier tsa motlakase, lisebelisoa tsa phetoho ea motlakase, le lipotoloho tsa motlakase tse sebelisoang likoloing tsa motlakase, litsamaisong tsa matla a nchafatsoang, le mechini ea indasteri.
●Li-amplifier tsa Matla a RF:Motsoako oa GaN le SiC o phethahetse bakeng sa lits'ebetso tsa RF tse nang le maqhubu a phahameng, tse matla a holimo joalo ka likhokahano tsa mohala, puisano ea sathelaete le litsamaiso tsa radar.
●Sebaka sa Lifofane le Tšireletso:Li-wafer tsena li loketse theknoloji ea lifofane le tšireletso e hlokang lisebelisoa tsa elektroniki tse sebetsang hantle le tsa puisano tse ka sebetsang tlas'a maemo a thata.
●Litšebeliso tsa Likoloi:E loketse litsamaiso tsa motlakase tse sebetsang hantle likoloing tsa motlakase (li-EV), likoloi tse tsoakiloeng (li-HEV), le liteisheneng tsa ho tjhaja, e leng se nolofalletsang phetoho le taolo ea motlakase ka katleho.
●Mekhoa ea Sesole le ea Radar:Li-wafer tsa GaN-on-SiC li sebelisoa litsamaisong tsa radar ka lebaka la bokhoni ba tsona bo phahameng, bokhoni ba ho sebetsana le matla, le ts'ebetso ea mocheso libakeng tse hlokang matla.
●Litšebeliso tsa Maqhubu a Microwave le Millimeter:Bakeng sa litsamaiso tsa puisano tsa moloko o latelang, ho kenyeletsoa le 5G, GaN-on-SiC e fana ka ts'ebetso e ntle ka ho fetisisa maemong a microwave a matla a phahameng le maqhubu a millimeter.

Lipotso le Likarabo

P1: Melemo ea ho sebelisa SiC e le substrate bakeng sa GaN ke efe?

A1:Silicon Carbide (SiC) e fana ka conductivity e phahameng ea mocheso, motlakase o phahameng oa ho senyeha, le matla a mechini ha ho bapisoa le li-substrate tsa setso joalo ka silicon. Sena se etsa hore li-wafer tsa GaN-on-SiC li be ntle bakeng sa lits'ebetso tse matla a holimo, maqhubu a phahameng le mocheso o phahameng. Substrate ea SiC e thusa ho qhala mocheso o hlahisoang ke lisebelisoa tsa GaN, e ntlafatsa ts'epo le ts'ebetso.

P2: Na botenya ba lera la epitaxial bo ka etsoa bakeng sa lits'ebetso tse itseng?

A2:E, botenya ba lera la epitaxial bo ka fetoloa ka har'a mefuta e fapaneng ea1.0 µm ho isa ho 3.5 µm, ho latela ditlhoko tsa matla le maqhubu a kopo ya hao. Re ka fetola botenya ba lera la GaN ho ntlafatsa tshebetso bakeng sa disebediswa tse itseng tse kang di-amplifier tsa matla, ditsamaiso tsa RF, kapa dipotoloho tsa maqhubu a phahameng.

P3: Phapang ke efe pakeng tsa di-substrate tsa 4H-N, HPSI, le 4H/6H-P SiC?

A3:

  • 4H-N: 4H-SiC e nang le naetrojene e atisa ho sebelisoa bakeng sa lits'ebetso tse nang le maqhubu a phahameng tse hlokang ts'ebetso e phahameng ea elektroniki.
  • HPSI: High-Purity Semi-Insulation SiC e fana ka karohano ea motlakase, e loketseng lits'ebetso tse hlokang ho tsamaisoa ha motlakase hanyane.
  • 4H/6H-P: Motsoako oa 4H le 6H-SiC o leka-lekanyang ts'ebetso, o fanang ka motsoako oa bokhoni bo phahameng le ho tiea, o loketseng lits'ebetso tse fapaneng tsa elektroniki tsa motlakase.

P4: Na di-wafer tsena tsa GaN-on-SiC di loketse ditshebediso tse matla jwalo ka dikoloi tsa motlakase le matla a ntjhafatswang?

A4:E, di-wafer tsa GaN-on-SiC di loketse hantle bakeng sa ditshebediso tse nang le matla a maholo jwalo ka dikoloi tsa motlakase, matla a ntjhafatswang, le ditsamaiso tsa diindasteri. Motlakase o phahameng wa ho senyeha, ho tsamaisa mocheso o phahameng, le bokgoni ba ho sebetsana le matla a disebediswa tsa GaN-on-SiC di di nolofalletsa ho sebetsa ka katleho dipotolohong tse hlokang phetoho ya matla le taolo.

P5: Bongata bo tloaelehileng ba dislocation bakeng sa di-wafer tsena ke bofe?

A5:Bongata ba dislocation tsa di-wafer tsena tsa GaN-on-SiC hangata bo< 1 x 10^6 cm^-2, e netefatsang kgolo ya epitaxial ya boleng bo hodimo, e fokotsang diphoso le ho ntlafatsa tshebetso le botshepehi ba sesebediswa.

P6: Na nka kopa boholo bo itseng ba wafer kapa mofuta oa substrate oa SiC?

A6:E, re fana ka boholo ba wafer bo ikhethileng (100mm le 150mm) le mefuta ea substrate ea SiC (4H-N, HPSI, 4H/6H-P) ho fihlela litlhoko tse ikhethileng tsa kopo ea hau. Ka kopo ikopanye le rona bakeng sa likhetho tse ling tsa ho iketsetsa le ho buisana ka litlhoko tsa hau.

P7: Li-wafer tsa GaN-on-SiC li sebetsa joang maemong a feteletseng?

A7:Li-wafer tsa GaN-on-SiC li loketse libaka tse feteletseng ka lebaka la botsitso ba tsona bo phahameng ba mocheso, ts'ebetso e matla haholo, le bokhoni bo botle ba ho qhala mocheso. Li-wafer tsena li sebetsa hantle maemong a mocheso o phahameng, matla a phahameng, le maqhubu a phahameng a atisang ho kopana le lits'ebetsong tsa lifofane, ts'ireletso le indasteri.

Qetello

Li-wafer tsa rona tsa GaN-on-SiC Epitaxial Wafer tse Ikhethileng li kopanya thepa e tsoetseng pele ea GaN le SiC ho fana ka ts'ebetso e phahameng lits'ebetsong tse matla le tse phahameng. Ka likhetho tse ngata tsa substrate tsa SiC le likarolo tse ka fetoloang tsa epitaxial, li-wafer tsena li loketse liindasteri tse hlokang ts'ebetso e phahameng, taolo ea mocheso le ts'epo. Ebang ke bakeng sa lisebelisoa tsa elektroniki tsa motlakase, litsamaiso tsa RF, kapa lits'ebetso tsa ts'ireletso, li-wafer tsa rona tsa GaN-on-SiC li fana ka ts'ebetso le ho tenyetseha hoo u ho hlokang.

Setšoantšo se qaqileng

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GaN ho SiC06

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