Li-substrate tsa kristale tsa peo ea SiC tse etselitsoeng motho ka mong Dia 205/203/208 4H-N Type bakeng sa puisano ea mahlo

Li-substrate tsa kristale tsa peo ea SiC tse etselitsoeng mofuta oa Dia 205/203/208 4H-N bakeng sa puisano ea mahlo Setšoantšo se hlahelletseng

Tlhaloso e Khutšoanyane:

Li-substrate tsa kristale tsa peo ea SiC (silicon carbide), e le bajari ba mantlha ba thepa ea semiconductor ea moloko oa boraro, li sebelisa conductivity ea tsona e phahameng ea mocheso (4.9 W/cm·K), matla a tšimo a ho phatloha ho hoholo (2–4 MV/cm), le bandgap e pharaletseng (3.2 eV)ho sebeletsa e le thepa ea motheo bakeng sa li-optoelectronics, likoloi tse ncha tsa matla, puisano ea 5G, le lits'ebetso tsa lifofane. Ka mahlale a tsoetseng pele a tlhahiso joalo ka lipalangoang tsa mouoane oa 'mele (PVT)le epitaxy ea phase ea metsi (LPE), XKH e fana ka li-substrate tsa peo ea polytype ea 4H/6H-N, tse thibelang mocheso ka semi-insulation, le tsa 3C-SiC ka mekhoa ea wafer ea lisenthimithara tse 2–12, ka bongata ba micropipe bo ka tlase ho 0.3 cm⁻², resistivity e tlohang ho 20–23 mΩ·cm, le roughness ea bokaholimo (Ra) <0.2 nm. Litšebeletso tsa rona li kenyelletsa kholo ea heteroepitaxial (mohlala, SiC-on-Si), machining ea nanoscale e nepahetseng (± 0.1 μm mamello), le phano e potlakileng ea lefats'e, e matlafatsang bareki ho hlola litšitiso tsa tekheniki le ho potlakisa ho se nke lehlakore ha khabone le phetoho e bohlale.

Romella imeile ho rona

Likaroloana

Litekanyetso tsa tekheniki

Sejana sa peo sa silicon carbide
Mofuta oa Polytype	4H
Phoso ea tataiso ea bokaholimo	4°ho ea ho<11-20>±0.5º
Ho hanyetsa	ho iketsetsa mokhoa oa ho iketsetsa
Bophara	205±0.5mm
Botenya	600±50μm
Ho ba le makukuno	CMP,Ra≤0.2nm
Botebo ba Micropipe	≤1 ka 'ngoe/cm2
Mengoapo	≤5, Bolelele bohle ≤2 * Bophara
Li-chips/li-indent tsa Edge	Ha ho letho
Ho tšoaea ka laser ka pele	Ha ho letho
Mengoapo	≤2, Bolelele bohle ≤Bophara
Li-chips/li-indent tsa Edge	Ha ho letho
Libaka tsa mefuta e mengata	Ha ho letho
Ho tšoaea ka laser ea morao	1mm (ho tloha pheletsong e ka holimo)
Moeli	Chamfer
Sephutheloana	Khasete ea li-wafer tse ngata

Litšobotsi tsa Bohlokoa

1. Sebopeho sa kristale le Tshebetso ya Motlakase

· Ho Tsitsisa ha Crystallographic: 100% 4H-SiC polytype dominance, ha ho na li-inclusions tse ngata tse kentsoeng (mohlala, 6H/15R), ka XRD rocking curve full-width at half-maximum (FWHM) ≤32.7 arcsec.

· Ho Tsamaya ha Mokero o Phahameng: Ho Tsamaya ha dielektrone tsa 5,400 cm²/V·s (4H-SiC) le ho Tsamaya ha masoba a 380 cm²/V·s, ho nolofalletsa meralo ya disebediswa tse nang le maqhubu a phahameng.

·Bothata ba Mahlasedi: E mamella mahlaseli a 1 MeV a neutron ka tekanyo ea tšenyo ea ho falla ea 1×10¹⁵ n/cm², e loketse bakeng sa lits'ebetso tsa lifofane le tsa nyutlelie.

2. Thepa ea Mocheso le ea Mekaniki

· Ho Tsamaisa Mocheso ka Mofuthu o Ikhethang: 4.9 W/cm·K (4H-SiC), e fetang habeli ea silicon, e tšehetsang ts'ebetso kaholimo ho 200°C.

· Koefficient e Tlase ea Katoloso ea Thermal: CTE ea 4.0×10⁻⁶/K (25–1000°C), e netefatsang ho lumellana le sephutheloana se thehiloeng ho silicon le ho fokotsa khatello ea mocheso.

3. Taolo e Phethahetseng le ho Sebetsa ka nepo

· Botenya ba Micropipe: <0.3 cm⁻² (li-wafer tsa lisenthimithara tse 8), botenya ba ho falla <1,000 cm⁻² (e netefalitsoe ka ho etching ha KOH).

· Boleng ba Bokaholimo: CMP e bentšitsoeng ho Ra <0.2 nm, e fihlela litlhoko tsa ho ba bataletse ha lithography tsa sehlopha sa EUV.

Litšebeliso tsa Bohlokoa

Sebaka	Maemo a Kopo	Melemo ea Tekheniki
Puisano ea Optical	Li-laser tsa 100G/400G, li-module tsa silicon photonics tse kopantsoeng	Li-substrate tsa peo ea InP li nolofalletsa ho ba le lekhalo le tobileng (1.34 eV) le heteroepitaxy e thehiloeng ho Si, e fokotsang tahlehelo ea ho kopanya ha optical.
Likoloi tse Ncha tsa Matla	Li-inverter tse nang le motlakase o phahameng oa 800V, li-charger tse ka hare ho sekepe (OBC)	Li-substrate tsa 4H-SiC li mamella >1,200 V, li fokotsa tahlehelo ea conduction ka 50% le bophahamo ba sistimi ka 40%.
5G Communications	Lisebelisoa tsa RF tsa maqhubu a millimeter (PA/LNA), li-amplifier tsa matla a seteishene sa motheo	Li-substrate tsa SiC tse thibelang mocheso ka semi-insulation (resistivity >10⁵ Ω·cm) li nolofalletsa kopanyo e sa sebetseng ea maqhubu a phahameng (60 GHz+).
Lisebelisoa tsa indasteri	Li-sensor tsa mocheso o phahameng, li-transformer tsa hona joale, li-monitor tsa li-reactor tsa nyutlelie	Li-substrate tsa peo ea InSb (0.17 eV bandgap) li fana ka kutlo ea makenete ho fihlela ho 300%@10 T.

Melemo ea Bohlokoa

Li-substrate tsa kristale ea peo ea SiC (silicon carbide) li fana ka ts'ebetso e sa bapisoang ka ho fetisa mocheso oa 4.9 W/cm·K, matla a tšimo ea ho senyeha ha 2–4 MV/cm, le lekhalo le pharaletseng la 3.2 eV, e nolofalletsang lits'ebetso tsa matla a holimo, maqhubu a phahameng, le mocheso o phahameng. Ka ho ba le lekhalo la micropipe le <1,000 cm⁻² lekhalo la ho arohana, li-substrate tsena li netefatsa ts'epahalo maemong a feteletseng. Ho se sebetse ha tsona ka lik'hemik'hale le libaka tse lumellanang le CVD (Ra <0.2 nm) li tšehetsa kholo e tsoetseng pele ea heteroepitaxial (mohlala, SiC-on-Si) bakeng sa litsamaiso tsa motlakase tsa optoelectronics le EV.

Litšebeletso tsa XKH:

1. Tlhahiso e Ikhethileng

· Mekhoa ea Wafer e Tenyetsehang: Li-wafer tsa lisenthimithara tse 2–12 tse nang le likotoana tse chitja, tse khutlonnetsepa, kapa tse entsoeng ka mokhoa o ikhethileng (± 0.01 mm mamello).

· Taolo ea ho sebelisa lithethefatsi tse thethefatsang: Ho sebelisa lithethefatsi tse thethefatsang tsa naetrojene (N) le aluminium (Al) ka nepo ka CVD, ho fihlella resistivity ho tloha ho 10⁻³ ho isa ho 10⁶ Ω·cm.

2. Mekhoa e Tsoetseng Pele ea Ts'ebetso.

· Heteroepitaxy: SiC-on-Si (e tsamaellanang le mela ya silicon ya di-inch tse 8) le SiC-on-Diamond (mocheso o tsamaisang motlakase >2,000 W/m·K).

· Ho Fokotsa Bofokodi bo Hlokahalang: Ho tjhesa le ho tjhesa haeterojene ho fokotsa bofokodi ba micropipe/density, ho ntlafatsa tlhahiso ya wafer ho fihlela ho >95%.

3. Mekhoa ea Tsamaiso ea Boleng.

· Teko ea ho Qetela: Raman spectroscopy (netefatso ea polytype), XRD (kristalinity), le SEM (tlhahlobo ea sekoli).

· Litifikeiti: Li lumellana le AEC-Q101 (likoloi), JEDEC (JEDEC-033), le MIL-PRF-38534 (sehlopha sa sesole).

4. Tšehetso ea Ketane ea Phepelo ea Lefatše ka Bophara.

· Bokgoni ba Tlhahiso: Tlhahiso ya kgwedi le kgwedi > di-wafer tse 10,000 (60% 8-inch), ka phano ya tshohanyetso ya dihora tse 48.

· Marangrang a Thepa: Ho akaretsoa Europe, Amerika Leboea, le Asia-Pacific ka thepa ea moea/leoatle ka liphutheloana tse laoloang ke mocheso.

5. Nts'etsopele-mmoho ea Tekheniki.

· Li-Lab tse Kopaneng tsa R&D: Tšebelisano-'moho ntlafatsong ea liphutheloana tsa module ea matla ea SiC (mohlala, kopanyo ea substrate ea DBC).

· Laesense ea IP: Fana ka laesense ea theknoloji ea kholo ea epitaxial ea GaN-on-SiC RF ho fokotsa litšenyehelo tsa R&D tsa bareki.

Kakaretso

Di-substrate tsa kristale ya peo ya SiC (silicon carbide), e le thepa ya mawa, di bopa botjha diketane tsa diindasteri tsa lefatshe ka ho ntshetsa pele kgolo ya kristale, taolo ya diphoso, le kopanyo e fapaneng. Ka ho tswela pele ho fokotsa diphoso tsa wafer ka ho tswela pele, ho eketsa tlhahiso ya di-inch tse 8, le ho hodisa di-platform tsa heteroepitaxial (mohlala, SiC-on-Diamond), XKH e fana ka ditharollo tse tshepahalang haholo le tse theko e tlase bakeng sa di-optoelectronics, matla a matjha le tlhahiso e tswetseng pele. Boitlamo ba rona ba boqapi bo netefatsa hore bareki ba etella pele ho se nke lehlakore ha carbon le ditsamaisong tse bohlale, ho kganna mehla e latelang ya di-ecosystem tsa semiconductor tse nang le lekhalo le leholo.