Mokhoa oa CVD oa ho hlahisa thepa e tala ea SiC e hloekileng haholo ka ontong ea synthesis ea silicon carbide ho 1600℃

Mokhoa oa CVD oa ho hlahisa thepa e tala ea SiC e hloekileng haholo ka har'a ontong ea synthesis ea silicon carbide ho 1600℃ Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Sebōpi sa motsoako oa Silicon carbide (SiC) (CVD). Se sebelisa theknoloji ea Chemical Vapor Deposition (CVD) ho mehloli ea ₄ ea silicon e nang le khase (mohlala, SiH₄, SiCl₄) tikolohong e nang le mocheso o phahameng moo li arabelang mehloling ea carbon (mohlala, C₃H₈, CH₄). Sesebelisoa sa bohlokoa bakeng sa ho holisa likristale tsa silicon carbide tse hloekileng haholo holim'a substrate (graphite kapa peo ea SiC). Theknoloji ena e sebelisoa haholo bakeng sa ho lokisa substrate ea kristale e le 'ngoe ea SiC (4H/6H-SiC), e leng lisebelisoa tsa mantlha tsa ts'ebetso bakeng sa tlhahiso ea li-semiconductor tsa matla (joalo ka MOSFET, SBD).

Romella imeile ho rona

Likaroloana

Molao-motheo oa ho sebetsa:

1. Phepelo ea pele ho nako. Likhase tsa mohloli oa silicon (mohlala, SiH₄) le mohloli oa khabone (mohlala, C₃H₈) li kopanngoa ka tekanyo 'me li fepeloa ka kamoreng ea karabelo.

2. Ho bola ha mocheso o phahameng: Mochesong o phahameng oa 1500 ~ 2300℃, ho bola ha khase ho hlahisa liathomo tse sebetsang tsa Si le C.

3. Karabelo ea bokaholimo: Liathomo tsa Si le C li beoa holim'a bokaholimo ba substrate ho etsa lera la kristale la SiC.

4. Kgolo ya kristale: Ka taolo ya ho phahama ha mocheso, phallo ya kgase le kgatello, ho fihlella kgolo e shebileng ka lehlakoreng le leng ho latela mothapo wa c kapa mothapo wa a.

Liparamente tsa bohlokoa:

· Mocheso: 1600~2200℃ (>2000℃ bakeng sa 4H-SiC)

· Khatello: 50~200mbar (khatello e tlase ho fokotsa nucleation ea khase)

· Karolelano ea khase: Si/C≈1.0~1.2 (ho qoba likoli tsa ntlafatso ea Si kapa C)

Likarolo tse ka sehloohong:

(1) Boleng ba kristale
Bongata ba sekoli bo tlase: botenya ba microtubule < 0.5cm ⁻², botenya ba dislocation < 10⁴ cm⁻².

Taolo ea mofuta oa polycrystalline: e ka holisa 4H-SiC (e tloaelehileng), 6H-SiC, 3C-SiC le mefuta e meng ea kristale.

(2) Tshebetso ea lisebelisoa
Ho tsitsa ha mocheso o phahameng: ho futhumatsa ha graphite induction kapa ho futhumatsa ho hanyetsang, mocheso o ka bang >2300℃.

Taolo ea ho tšoana: ho feto-fetoha ha mocheso ± 5℃, sekhahla sa kholo 10~ 50μm/h.

Sistimi ea khase: Seteishene sa phallo ea boima bo nepahetseng haholo (MFC), bohloeki ba khase ≥99.999%.

(3) Melemo ea theknoloji
Bohloeki bo phahameng: Bongata ba litšila tse ka morao <10¹⁶ cm⁻³ (N, B, jj.).

Boholo bo boholo: Tšehetsa kholo ea substrate ea SiC ea 6 "/8".

(4) Tšebeliso ea matla le litšenyehelo
Tšebeliso e phahameng ea matla (200~500kW·h ka ontong), e etsang 30%~50% ea litšenyehelo tsa tlhahiso ea substrate ea SiC.

Likopo tsa mantlha:

1. Substrate ea semiconductor ea motlakase: Li-MOSFET tsa SiC bakeng sa ho etsa likoloi tsa motlakase le li-inverter tsa photovoltaic.

2. Sesebelisoa sa Rf: Setsi sa motheo sa 5G GaN-on-SiC epitaxial substrate.

3. Disebediswa tsa tikoloho e feteletseng: disensara tsa mocheso o phahameng bakeng sa difofane le dimela tsa matla a nyutlelie.

Tlhaloso ea Tekheniki:

Tlhaloso	Lintlha tse qaqileng
Litekanyo (L × W × H)	4000 x 3400 x 4300 mm kapa o iketsetse
Bophara ba kamore ea sebōpi	1100mm
Bokgoni ba ho kenya	50kg
Tekanyo ea vacuum e lekanyelitsoeng	10-2Pa (lihora tse 2 kamora hore pompo ea limolek'hule e qale)
Sekhahla sa ho phahama ha khatello ea kamore	≤10Pa/h (kamora ho calcination)
Sekoahelo se ka tlase sa ho phahamisa sekoahelo sa sebōpi	1500mm
Mokhoa oa ho futhumatsa	Ho futhumatsa ka induction
Mocheso o phahameng ka ho fetisisa ka ontong	2400°C
Phepelo ea motlakase o futhumatsang	2X40kW
Tekanyo ea mocheso	Tekanyo ea mocheso oa infrared ea mebala e 'meli
Mefuta ea mocheso	900~3000℃
Ho nepahala ha taolo ea mocheso	±1°C
Taolo ea khatello ea taolo	1 ~ 700mbar
Ho nepahala ha Taolo ea Khatello	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Mokhoa oa ho kenya	Moroalo o tlase;
tlhophiso ea boikhethelo	Sebaka sa ho lekanya mocheso habeli, ho laolla forklift.

Litšebeletso tsa XKH:

XKH e fana ka lits'ebeletso tsa potoloho e felletseng bakeng sa lifono tsa CVD tsa silicon carbide, ho kenyeletsoa le ho iketsetsa lisebelisoa (moralo oa sebaka sa mocheso, tlhophiso ea sistimi ea khase), nts'etsopele ea ts'ebetso (taolo ea kristale, ntlafatso ea sekoli), koetliso ea botekgeniki (ts'ebetso le tlhokomelo) le ts'ehetso ea kamora thekiso (phepelo ea likarolo tse ling tsa likarolo tsa bohlokoa, tlhahlobo ea hole) ho thusa bareki ho fihlela tlhahiso ea boleng bo holimo ea substrate ea SiC. Le ho fana ka lits'ebeletso tsa ntlafatso ea ts'ebetso ho ntlafatsa chai ea kristale le katleho ea kholo ka ho tsoelang pele.