Gallium Nitride hodima Silicon wafer 4inch 6inch Substrate e Ikhethileng ya Si Substrate, Resistivity, le Dikgetho tsa mofuta wa N/P

Gallium Nitride hodima Silicon wafer 4inch 6inch Substrate e Loketsweng ya Si Substrate, Resistivity, le Dikgetho tsa mofuta wa N/P Setšoantšo se Hlahisitsweng

Tlhaloso e Khutšoanyane:

Li-wafer tsa rona tsa Gallium Nitride tse Ikhethileng ho Silicon (GaN-on-Si) li etselitsoe ho fihlela litlhoko tse ntseng li eketseha tsa lits'ebetso tsa elektroniki tse nang le maqhubu a phahameng le tse matla a holimo. Li fumaneha ka boholo ba li-wafer tsa lisenthimithara tse 4 le tse 6, li-wafer tsena li fana ka likhetho tsa ho iketsetsa bakeng sa tataiso ea substrate ea Si, resistivity, le mofuta oa doping (N-type/P-type) ho latela litlhoko tse ikhethileng tsa ts'ebeliso. Theknoloji ea GaN-on-Si e kopanya melemo ea gallium nitride (GaN) le substrate ea silicon (Si) e theko e tlase, e nolofalletsang tsamaiso e betere ea mocheso, katleho e phahameng, le lebelo le potlakileng la ho chencha. Ka lekhalo la tsona le leholo la bandgap le khanyetso e tlase ea motlakase, li-wafer tsena li loketse phetoho ea matla, lits'ebetso tsa RF, le litsamaiso tsa phetisetso ea data tse potlakileng.

Romella imeile ho rona

Likaroloana

●Lekhalo le Sephara la Bandgap:GaN (3.4 eV) e fana ka ntlafatso e kgolo tshebetsong ya maqhubu a phahameng, matla a phahameng, le mocheso o phahameng ha e bapiswa le silicon ya setso, e leng se etsang hore e be ntle bakeng sa disebediswa tsa motlakase le di-amplifiers tsa RF.
●Tlhophiso ea Substrate e ka Iketsetsoang ka Mokhoa o Ikhethileng:Khetha ho tsoa ho litsela tse fapaneng tsa substrate tsa Si tse kang <111>, <100>, le tse ling ho tsamaisana le litlhoko tse itseng tsa sesebelisoa.
● Ho hanyetsa ka mokhoa o ikhethileng:Kgetha pakeng tsa dikgetho tse fapaneng tsa ho hanyetsa bakeng sa Si, ho tloha ho sethibela-mollo ho isa ho sethibela-mollo se phahameng le sethibela-mollo se tlase ho ntlafatsa tshebetso ya sesebediswa.
●Mofuta oa ho sebelisa lithethefatsi tse tahang:E fumaneha ka mokhoa oa ho sebelisa matla a mofuta oa N kapa oa P ho latela litlhoko tsa lisebelisoa tsa motlakase, li-transistors tsa RF, kapa li-LED.
●Motlakase o Phahameng oa ho Senyeha:Li-wafer tsa GaN-on-Si li na le motlakase o phahameng oa ho senyeha (ho fihlela ho 1200V), e leng se li lumellang ho sebetsana le lits'ebetso tsa motlakase o phahameng.
●Lebelo le Potlakileng la ho Fetola:GaN e na le motsamao o phahameng oa lielektrone le tahlehelo e tlase ea ho fetola ho feta silicon, e leng se etsang hore li-wafer tsa GaN-on-Si li be ntle bakeng sa lipotoloho tse lebelo le phahameng.
●Ts'ebetso e Ntlafalitsoeng ea Thermal:Ho sa tsotellehe ho tsamaisoa ha mocheso o tlase ha silicon, GaN-on-Si e ntse e fana ka botsitso bo phahameng ba mocheso, ka ho qhalana ha mocheso ho betere ho feta disebediswa tsa silicon tsa setso.

Litlhaloso tsa Tekheniki

Paramethara	Boleng
Boholo ba Wafer	Li-inch tse 4, lisenthimithara tse 6
Tsela ea ho Ikamahanya le Maemo a Ka tlas'a Lefatše	<111>, <100>, e ikgethileng
Haeba Resistivity	Ho hanyetsa ka matla, Ho thibela mocheso ka sekala, Ho hanyetsa ka tlase
Mofuta oa ho sebelisa lithethefatsi	Mofuta oa N, mofuta oa P
Botenya ba Lera la GaN	100 nm – 5000 nm (e ka fetoloang)
Lera la Thibelo ea AlGaN	24% – 28% Al (e tloaelehileng 10-20 nm)
Phallo ea Motlakase	600V – 1200V
Ho Tsamaea ha Elektrone	2000 cm²/V·s
Maqhubu a ho Fetola	Ho fihlela ho 18 GHz
Bokaholimo ba Wafer bo Mahlohlojane	RMS ~0.25 nm (AFM)
Khanyetso ea Lakane ea GaN	437.9 Ω·cm²
Kakaretso ea Wafer Warp	< 25 µm (boholo)
Ho khanna ha mocheso	1.3 – 2.1 W/cm·K

Likopo

Matla a Elektroniki: GaN-on-Si e loketse lisebelisoa tsa motlakase tse kang li-amplifier tsa motlakase, li-converter, le li-inverter tse sebelisoang lits'ebetsong tsa matla a nchafatsoang, likoloing tsa motlakase (li-EV), le lisebelisoa tsa indasteri. Motlakase oa eona o phahameng oa ho senyeha le khanyetso e tlase li netefatsa phetoho e sebetsang ea motlakase, esita le lits'ebetsong tsa matla a phahameng.

RF le Khokahano ea Microwave: Li-wafer tsa GaN-on-Si li fana ka bokhoni ba maqhubu a phahameng, e leng se etsang hore li be tse phethahetseng bakeng sa li-amplifiers tsa matla a RF, puisano ea sathelaete, litsamaiso tsa radar le mahlale a 5G. Ka lebelo le phahameng la ho chencha le bokhoni ba ho sebetsa maqhubung a phahameng (ho fihlela ho18 GHz), Disebediswa tsa GaN di fana ka tshebetso e phahameng haholo ditshebedisong tsena.

Lisebelisoa tsa Elektroniki tsa Likoloi: GaN-on-Si e sebelisoa lits'ebetsong tsa motlakase tsa likoloi, ho kenyeletsoalitjhaja tse ka hare ho sekepe (OBCs)leLi-converter tsa DC-DCBokhoni ba eona ba ho sebetsa maemong a phahameng a mocheso le ho mamella maemo a phahameng a motlakase bo e etsa hore e tšoanelehe hantle bakeng sa lits'ebetso tsa likoloi tsa motlakase tse hlokang phetoho e matla ea motlakase.

LED le Optoelectronics: GaN ke thepa e khethiloeng bakeng sa mabone a LED a maputsoa le a masoeuLi-wafer tsa GaN-on-Si li sebelisetsoa ho hlahisa litsamaiso tsa mabone a LED tse sebetsang hantle haholo, tse fanang ka ts'ebetso e ntle maboneng, mahlaleng a ponts'o le puisanong ea optical.

Lipotso le Likarabo

P1: Molemo oa GaN ke ofe ho feta silicon lisebelisoa tsa elektroniki?

A1:GaN e na lelekhalo le pharaletseng (3.4 eV)ho feta silicon (1.1 eV), e e lumellang ho mamella di-voltage le dithempereichara tse phahameng. Thepa ena e nolofalletsa GaN ho sebetsana le ditshebediso tsa matla a maholo ka katleho e kgolo, e fokotsa tahlehelo ya matla le ho eketsa tshebetso ya sistimi. GaN e boetse e fana ka lebelo le potlakileng la ho chencha, e leng la bohlokwa bakeng sa disebediswa tse nang le maqhubu a phahameng jwalo ka di-amplifiers tsa RF le di-converter tsa matla.

P2: Na nka etsa hore tataiso ea substrate ea Si e be ea hau bakeng sa ts'ebeliso ea ka?

A2:E, re fana kalitsela tsa substrate tsa Si tse ka fetoloangjoalo ka<111>, <100>, le litsela tse ling ho latela litlhoko tsa sesebelisoa sa hau. Tsela eo sesebelisoa sa Si se shebaneng ka eona e bapala karolo ea bohlokoa ts'ebetsong ea sesebelisoa, ho kenyeletsoa litšobotsi tsa motlakase, boitšoaro ba mocheso le botsitso ba mechini.

P3: Melemo ea ho sebelisa li-wafer tsa GaN-on-Si bakeng sa lits'ebetso tse sebelisoang khafetsa ke efe?

A3:Li-wafer tsa GaN-on-Si li fana ka boleng bo holimolebelo la ho chencha, e nolofalletsang ts'ebetso e potlakileng maqhubung a phahameng ha e bapisoa le silicon. Sena se etsa hore e be tse loketseng bakeng saRFlemicrowavelits'ebetso, hammoho le maqhubu a phahamenglisebelisoa tsa motlakasejoalo kaLi-HEMT(Litransistor tsa High Electron Mobility) leLi-amplifier tsa RFHo tsamaea ha dielektrone ho phahameng ha GaN ho boetse ho fella ka tahlehelo e tlase ya ho fetola le bokgoni bo ntlafetseng.

P4: Ke dikgetho dife tsa ho sebelisa lithethefatsi tse fumanehang bakeng sa di-wafer tsa GaN-on-Si?

A4:Re fana ka bobeliMofuta oa NleMofuta oa Pdikgetho tsa doping, tse sebediswang hangata bakeng sa mefuta e fapaneng ya disebediswa tsa semiconductor.Ho sebelisa lithethefatsi tsa mofuta oa Ne loketse bakeng sali-transistors tsa matlaleLi-amplifier tsa RF, haHo sebelisa lithethefatsi tsa mofuta oa Phangata e sebelisoa bakeng sa lisebelisoa tsa optoelectronic tse kang li-LED.

Qetello

Li-wafer tsa rona tsa Gallium Nitride tse Ikhethileng ho Silicon (GaN-on-Si) li fana ka tharollo e phethahetseng bakeng sa lits'ebetso tsa maqhubu a phahameng, matla a phahameng le mocheso o phahameng. Ka mekhoa ea Si substrate e ka fetoloang, resistivity, le doping ea mofuta oa N/P, li-wafer tsena li etselitsoe ho fihlela litlhoko tse ikhethileng tsa liindasteri ho tloha ho litsamaiso tsa motlakase le likoloi ho ea ho puisano ea RF le mahlale a LED. Li sebelisa thepa e phahameng ea GaN le bokhoni ba ho hola ba silicon, li-wafer tsena li fana ka ts'ebetso e ntlafalitsoeng, bokhoni le tšireletso ea bokamoso bakeng sa lisebelisoa tsa moloko o latelang.