Gallium Nitride ho Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, le Likhetho tsa mofuta oa N/P

Gallium Nitride ho Silicon wafer 4inch 6inch Tailored Si Substrate Orientation, Resistivity, le N-mofuta/P-mofuta oa Khetho ea Setšoantšo se Featured

Tlhaloso e Khutšoanyane:

Li-Wafers tsa rona tsa Gallium Nitride tse Customized holim'a Silicon (GaN-on-Si) li etselitsoe ho khotsofatsa litlhoko tse ntseng li eketseha tsa lisebelisoa tsa elektroniki tsa maqhubu a phahameng le a matla a phahameng. Li fumaneha ka bobeli ba 4-inch le 6-inch wafer, li-wafers tsena li fana ka likhetho tsa ho itlhophisa bakeng sa Si substrate orientation, resistivity, le mofuta oa doping (N-type/P-type) ho lumellana le litlhoko tse khethehileng tsa kopo. Theknoloji ea GaN-on-Si e kopanya melemo ea gallium nitride (GaN) le substrate ea silicon (Si) e theko e tlaase, e nolofalletsang tsamaiso e ntlafetseng ea mocheso, katleho e phahameng, le lebelo la ho fetola ka potlako. Ka li-bandgap tsa tsona tse pharaletseng le ho hanyetsa motlakase o tlase, li-wafers tsena li loketse ho fetola matla, lits'ebetso tsa RF, le lits'ebetso tsa phetisetso ea data e potlakileng.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Likaroloana

●Wide Bandgap:GaN (3.4 eV) e fana ka ntlafatso e kholo ts'ebetsong ea maqhubu a phahameng, matla a holimo, le mocheso o phahameng ha o bapisoa le silicon ea setso, e etsa hore e be e loketseng lisebelisoa tsa motlakase le li-amplifiers tsa RF.
● Customizable Si Substrate Orientation:Khetha ho tsoa ho mekhoa e fapaneng ea Si substrate joalo ka <111>, <100>, le tse ling ho tsamaisana le litlhoko tse ikhethileng tsa sesebelisoa.
● Resistivity e Khethehileng:Khetha pakeng tsa likhetho tse fapaneng tsa ho hanyetsa bakeng sa Si, ho tloha ho semi-insulating ho ea ho ho hanyetsa ho phahameng le ho fokotsa ho hanyetsa ho ntlafatsa tshebetso ea sesebelisoa.
● Mofuta oa Doping:E fumaneha ka mofuta oa N-kapa oa P-doping ho tsamaisana le litlhoko tsa lisebelisoa tsa motlakase, li-transistors tsa RF, kapa li-LED.
● High Breakdown Voltage:Li-wafers tsa GaN-on-Si li na le matla a phahameng a ho senya (ho fihla ho 1200V), tse li lumellang ho sebetsana le lisebelisoa tse phahameng tsa motlakase.
● Mabelo a ho Fetoha ka Pele:GaN e na le motsamao o phahameng oa elektrone le tahlehelo e tlase ea switching ho feta silicon, e etsa hore li-wafers tsa GaN-on-Si li loketse li-circuits tse lebelo le holimo.
● Ts'ebetso e Ntlafetseng ea Thermal:Leha ho na le mocheso o tlase oa silicon, GaN-on-Si e ntse e fana ka botsitso bo phahameng ba mocheso, ka mocheso o betere ho feta lisebelisoa tsa silicon tsa setso.

Litlhaloso tsa Tekheniki

Paramethara	Boleng
Boholo ba Wafer	4-inch, 6-inch
Ke Substrate Orientation	<111>, <100>, tloaelo
Ke Resistivity	High-resistivity, Semi-insulating, Low-resistivity
Mofuta oa Doping	Mofuta oa N, mofuta oa P
Botenya ba Lera la GaN	100nm - 5000nm (e ka etsoa ka mokhoa o ikhethileng)
AlGaN Barrier Layer	24% - 28% Al (e tloaelehileng 10-20 nm)
Ho senyeha ha Voltage	600V - 1200V
Elektrone Mobility	2000 cm²/V·s
Fetoha Frequency	Ho fihlela ho 18 GHz
Bokhopo ba Sekahare	RMS ~0.25 nm (AFM)
GaN Sheet Resistance	437.9 Ω·cm²
Kakaretso ea Wafer Warp	<25 µm (boholo)
Thermal Conductivity	1.3 - 2.1 W/cm·K

Lisebelisoa

Matla a Elektronike: GaN-on-Si e loketse lisebelisoa tsa elektronike tse kang li-amplifiers tsa matla, li-converter le li-inverters tse sebelisoang mekhoeng ea matla a tsosolositsoeng, likoloi tsa motlakase (EVs), le lisebelisoa tsa indasteri. Matla a eona a phahameng a ho senyeha ha matla le ho hanyetsa ho tlaase ho netefatsa hore matla a fetoha hantle, esita le lits'ebetsong tsa matla a phahameng.

RF le Microwave Communications: Li-wafers tsa GaN-on-Si li fana ka bokhoni ba maqhubu a holimo, e leng se etsang hore e be tse loketseng liamplifi tsa motlakase tsa RF, likhokahano tsa satellite, litsamaiso tsa radar le mahlale a 5G. Ka lebelo le phahameng la ho switjha le bokhoni ba ho sebetsa ka maqhubu a holimo (ho fihlela ho18 GHz), lisebelisoa tsa GaN li fana ka ts'ebetso e phahameng lits'ebetsong tsena.

Likoloi tsa Elektronike: GaN-on-Si e sebelisoa mekhoeng ea matla a likoloi, ho kenyeletsali-charger tse ka har'a board (OBCs)leLi-converter tsa DC-DC. Bokhoni ba eona ba ho sebetsa ka mocheso o phahameng le ho mamella maemo a phahameng a motlakase bo etsa hore e lekane hantle bakeng sa lisebelisoa tsa koloi ea motlakase tse hlokang phetoho e matla ea matla.

LED le Optoelectronics: GaN ke thepa ea khetho bakeng sa li-LED tse putsoa le tse tšoeu. Li-wafers tsa GaN-on-Si li sebelisetsoa ho hlahisa lisebelisoa tse phahameng tsa mabone a LED, tse fanang ka ts'ebetso e babatsehang ea mabone, theknoloji ea ho bonts'a, le puisano ea optical.

Q&A

Q1: Molemo oa GaN ke ofe ho feta silicon ka lisebelisoa tsa elektroniki?

A1:GaN e na lesehlopha se pharaletseng (3.4 eV)ho feta silicon (1.1 eV), e e lumellang ho mamella maqhubu a phahameng le mocheso. Thepa ena e thusa GaN ho sebetsana ka katleho le lits'ebetso tsa matla a phahameng, ho fokotsa tahlehelo ea matla le ho eketsa ts'ebetso ea sistimi. GaN e boetse e fana ka lebelo la ho chencha ka potlako, tse bohlokoa bakeng sa lisebelisoa tsa maqhubu a phahameng joalo ka li-amplifiers tsa RF le li-converter tsa motlakase.

Q2: A na nka etsa sebopeho sa Si substrate bakeng sa ts'ebeliso ea ka?

A2:E, rea fanacustomizable Si substrate orientationsjoalo ka<111>, <100>, le mekhoa e meng ho latela litlhoko tsa sesebelisoa sa hau. Sebopeho sa Si substrate se bapala karolo ea bohlokoa ts'ebetsong ea lisebelisoa, ho kenyelletsa le litšobotsi tsa motlakase, boitšoaro ba mocheso, le botsitso ba mochine.

Q3: Melemo ea ho sebelisa li-wafers tsa GaN-on-Si bakeng sa lits'ebetso tse phahameng haholo ke life?

A3:Li-wafers tsa GaN-on-Si li fana ka maemo a holimomabelo a ho fetoha, e nolofalletsang ts'ebetso e potlakileng ka maqhubu a phahameng ha a bapisoa le silicon. Sena se ba etsa ba loketseng bakeng saRFlemicrowavelisebelisoa, hammoho le maqhubu a phahamenglisebelisoa tsa motlakasejoalo kaHEMTs(High Electron Mobility Transistors) leLi-amplifiers tsa RF. Ho tsamaea ha elektronike e phahameng ea GaN ho boetse ho fella ka tahlehelo e fokolang ea ho fetola le ho ntlafatsa ts'ebetso.

Q4: Ke likhetho life tsa doping tse fumanehang bakeng sa li-wafers tsa GaN-on-Si?

A4:Re fana ka bobeliN-mofutaleMofuta oa Pdikgetho tsa doping, tse atisang ho sebelisoa bakeng sa mefuta e fapaneng ea lisebelisoa tsa semiconductor.Doping ea mofuta oa Ne loketse bakeng sali-transistors tsa matlaleLi-amplifiers tsa RF, haDoping ea mofuta oa Phangata e sebelisoa bakeng sa lisebelisoa tsa optoelectronic tse kang li-LED.

Qetello

Li-Wafers tsa rona tse Customized Gallium Nitride holim'a Silicon (GaN-on-Si) li fana ka tharollo e loketseng bakeng sa lisebelisoa tsa maqhubu a phahameng, matla a phahameng le mocheso o phahameng. Ka mekhoa e ikhethileng ea Si substrate, resistivity, le doping ea mofuta oa N-type/P, li-wafers tsena li etselitsoe ho fihlela litlhoko tse khethehileng tsa indasteri ho tloha ho lisebelisoa tsa motlakase le lisebelisoa tsa likoloi ho ea ho puisano ea RF le theknoloji ea LED. Ka ho sebelisa thepa e phahameng ea GaN le scalability ea silicon, li-wafers tsena li fana ka ts'ebetso e ntlafetseng, ts'ebetso e ntle, le bopaki ba nako e tlang bakeng sa lisebelisoa tsa moloko o latelang.