HPSI SiC Wafer ≥90% Transmittance Optical Grade bakeng sa likhalase tsa AI/AR
Kenyelletso ea mantlha: Karolo ea HPSI SiC Wafers ho AI/AR Glass
HPSI (High-Purity Semi-Insulating) Silicon Carbide wafers ke liphaphatha tse khethehileng tse khetholloang ka ho hanyetsa ho hoholo (>10⁹ Ω·cm) le sekoli se tlase haholo. Ka likhalase tsa AI / AR, haholo-holo li sebetsa e le lisebelisoa tsa mantlha tsa lilense tsa diffractive optical waveguide, tse sebetsanang le libotlolo tse amanang le lisebelisoa tsa setso tsa optical ho latela lintlha tse bobebe le tse bobebe, phallo ea mocheso le ts'ebetso ea mahlo. Mohlala, likhalase tsa AR tse sebelisang lilense tsa SiC waveguide li ka fihlela pono e pharalletseng (FOV) ea 70°–80°, ha li ntse li fokotsa botenya ba lense e le 'ngoe ho isa ho 0.55mm feela le boima ba 2.7g feela, e leng ho matlafatsang ho apara le ho qoelisoa ka pono.
Litšobotsi tsa Bohlokoa: Kamoo SiC Material e Matlafatsang Moralo oa Likhalase tsa AI/AR
High Refractive Index le Optical Performance Optimization
- SiC's refractive index (2.6-2.7) e batla e phahame ka 50% ho feta ea khalase ea setso (1.8-2.0). Sena se lumella meaho e mesesane le e sebetsang hantle ea waveguide, e holisang FOV haholo. Lenane le phahameng la refractive le boetse le thusa ho hatella "mokotlana" o tloaelehileng ho li-waveguides tse fapaneng, ho ntlafatsa bohloeki ba setšoantšo.
Bokhoni bo ikhethang ba ho laola Thermal
- Ka mocheso oa mocheso o ka holimo ho 490 W/m·K (haufi le oa koporo), SiC e ka qhala mocheso o hlahisoang ke limojule tsa ponts’o tsa Micro-LED. Sena se thibela ho senyeha ha ts'ebetso kapa ho tsofala ha lisebelisoa ka lebaka la mocheso o phahameng, ho netefatsa bophelo bo bolelele ba betri le botsitso bo phahameng.
Matla a Mechini le ho tšoarella
- SiC e na le boima ba Mohs ba 9.5 (ea bobeli ho daemane), e fana ka khanyetso e ikhethang, e etsang hore e be e loketseng bakeng sa likhalase tse sebelisoang khafetsa. Bokaholimo ba eona bo ka laoloa ho Ra <0.5 nm, ho netefatsa tahlehelo e tlase le phetisetso ea khanya e ts'oanang haholo ho li-waveguides.
Tšebelisano ea Thepa ea Motlakase
- HPSI SiC's resistivity (>10⁹ Ω·cm) e thusa ho thibela tšitiso ea matšoao. E ka sebetsa hape e le sesebelisoa sa sesebelisoa sa matla se sebetsang hantle, se ntlafatsang li-module tsa taolo ea matla ka likhalase tsa AR.
Litaelo tsa mantlha tsa kopo
Core Optical Components bakeng sa AI/AR Glasses
- Lilense tsa Diffractive Waveguide : Li-substrates tsa SiC li sebelisoa ho theha li-waveguide tse tšesaane haholo tse tšehetsang FOV e kholo le ho felisa phello ea mookoli.
- Window Plates le Prisms: Ka ho itšeha le ho bentša ka mokhoa o ikhethileng, SiC e ka sebetsoa hore e be lifensetere tse sirelletsang kapa li-prism tsa optical bakeng sa likhalase tsa AR, e ntlafatsa phetiso ea khanya le ho hanyetsa ho roala.
Likopo tse Atolositsoeng Linaheng Tse Ling
- Power Electronics: E sebelisoa maemong a phahameng haholo, a matla a phahameng joalo ka li-inverters tse ncha tsa koloi ea matla le taolo ea makoloi a indasteri.
- Quantum Optics: E sebetsa e le moamoheli oa litsi tsa mebala, tse sebelisoang ka har'a li-substrates bakeng sa lisebelisoa tsa puisano tsa quantum le lisebelisoa tsa ho utloa.
4 Inch & 6 Inch HPSI SiC Substrate Specification Papiso
| Paramethara | Kereiti | 4-Inch Substrate | 6-Inch Substrate |
| Diameter | Z Kereiti / D Kereiti | 99.5 limilimithara - 100.0 limilimithara | 149.5 limilimithara - 150.0 limilimithara |
| Mofuta oa poly | Z Kereiti / D Kereiti | 4H | 4H |
| Botenya | Z Kereiti | 500 μm ± 15 μm | 500 μm ± 15 μm |
| D Kereiti | 500 μm ± 25 μm | 500 μm ± 25 μm | |
| Wafer Orientation | Z Kereiti / D Kereiti | Ka lehlakoreng le leng: <0001> ± 0.5° | Ka lehlakoreng le leng: <0001> ± 0.5° |
| Micropipe Density | Z Kereiti | ≤ 1 cm² | ≤ 1 cm² |
| D Kereiti | ≤ 15 cm² | ≤ 15 cm² | |
| Resistivity | Z Kereiti | ≥ 1E10 Ω·cm | ≥ 1E10 Ω·cm |
| D Kereiti | ≥ 1E5 Ω·cm | ≥ 1E5 Ω·cm | |
| Mokhoa oa mantlha oa Flat | Z Kereiti / D Kereiti | (10-10) ± 5.0° | (10-10) ± 5.0° |
| Bolelele ba Pele ba Pele | Z Kereiti / D Kereiti | 32.5 limilimithara ± 2.0 limilimithara | Notch |
| Bolelele ba Bobeli ba Flat | Z Kereiti / D Kereiti | 18.0 limilimithara ± 2.0 limilimithara | - |
| Edge Exclusion | Z Kereiti / D Kereiti | 3 limilimithara | 3 limilimithara |
| LTV / TTV / Bow / Warp | Z Kereiti | ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm | ≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm |
| D Kereiti | ≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm | ≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm | |
| Bokhopo | Z Kereiti | Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm | Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm |
| D Kereiti | Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm | Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm | |
| Edge Cracks | D Kereiti | Sebaka sa pokello ≤ 0.1% | Bolelele bo akaretsang ≤ 20 mm, e le 'ngoe ≤ 2 mm |
| Libaka tsa Polytype | D Kereiti | Sebaka sa pokello ≤ 0.3% | Kakaretso ≤ 3% |
| Li-Visual Carbon Inclusions | Z Kereiti | Sebaka sa pokello ≤ 0.05% | Sebaka sa pokello ≤ 0.05% |
| D Kereiti | Sebaka sa pokello ≤ 0.3% | Kakaretso ≤ 3% | |
| Lisebelisoa tsa Silicon Surface Scratches | D Kereiti | 5 e lumelletsoe, e 'ngoe le e' ngoe ≤1mm | Bolelele ba kakaretso ≤ 1 x bophara |
| Li-Chips tsa Edge | Z Kereiti | Ha e lumelloe (bophara le botebo ≥0.2mm) | Ha e lumelloe (bophara le botebo ≥0.2mm) |
| D Kereiti | 7 e lumelletsoe, e 'ngoe le e' ngoe ≤1mm | 7 e lumelletsoe, e 'ngoe le e' ngoe ≤1mm | |
| Threading Screw Dislocation | Z Kereiti | - | ≤ 500 cm² |
| Packaging | Z Kereiti / D Kereiti | Multi-wafer Cassette Kapa Single Wafer Container | Multi-wafer Cassette Kapa Single Wafer Container |
Litšebeletso tsa XKH: Tsebo e Kopantsoeng ea Tlhahiso le ho Itloaetsa
Khamphani ea XKH e na le bokhoni ba ho kopanya ho tloha ho lisebelisoa tse tala ho isa ho li-wafers tse felileng, tse koahelang ketane eohle ea kholo ea SiC substrate, slicing, polishing le tloaelo ea ho sebetsa. Melemo ea bohlokoa ea litšebeletso e kenyelletsa:
- Phapang ea Lintho:Re ka fana ka mefuta e fapaneng ea li-wafer joalo ka mofuta oa 4H-N, mofuta oa 4H-HPSI, mofuta oa 4H/6H-P, le mofuta oa 3C-N. Resistivity, botenya, le mokhoa oa ho sheba li ka fetoloa ho latela litlhoko.
- .Flexible Size Customization:Re ts'ehetsa ts'ebetso ea li-wafer ho tloha ho li-diameter tse 2 ho isa ho tse 12-inch, hape re ka sebetsana le meaho e ikhethileng joalo ka likotoana tsa lisekoere (mohlala, 5x5mm, 10x10mm) le liprism tse sa tloaelehang.
- Taolo ea Optical-Grade Precision:Wafer Total Thickness Variation (TTV) e ka bolokoa ho <1μm, le bokaholimo ba bokaholimo ho Ra <0.3 nm, ho fihlela litlhoko tsa nano-level flatness bakeng sa lisebelisoa tsa waveguide.
- Karabo ea Rapid Market:Mokhoa o kopanetsoeng oa khoebo o tiisa phetoho e sebetsang ho tloha ho R & D ho ea ho lihlahisoa tse ngata, ho tšehetsa ntho e 'ngoe le e' ngoe ho tloha ho netefatso ea lihlopha tse nyenyane ho ea ho thepa e ngata (nako ea pele ka tloaelo matsatsi a 15-40).

FAQ ea HPSI SiC Wafer
Q1: Hobaneng HPSI SiC e nkuoa e le lisebelisoa tse loketseng lilense tsa AR waveguide?
A1: Lenane la eona le phahameng la refractive (2.6-2.7) le thusa mekhoa e metle ea maqhubu a maqhubu a tšesaane, a sebetsang hantle a tšehetsang sebaka se seholo sa pono (mohlala, 70 ° -80 °) ha a ntse a felisa "phello ea mookoli".
Q2: HPSI SiC e ntlafatsa taolo ea mocheso joang ka likhalase tsa AI/AR?
A2: Ka conductivity ea mocheso ho fihlela ho 490 W / m·K (haufi le koporo), e senya mocheso ka katleho ho tsoa ho likarolo tse kang Micro-LED, ho netefatsa ts'ebetso e tsitsitseng le nako e telele ea lisebelisoa.
Q3: Ke melemo efe ea nako e telele eo HPSI SiC e fanang ka eona bakeng sa likhalase tse aparoang?
A3: Ho thatafala ha eona ho ikhethang (Mohs 9.5) ho fana ka khanyetso e phahameng ka ho fetisisa, e etsa hore e tšoarelle nako e telele bakeng sa tšebeliso ea letsatsi le letsatsi ea likhalase tsa AR tsa boemo ba bareki.













