Li-wafers tsa Indium Antimonide (InSb) mofuta oa P oa mofuta oa Epi o itokiselitse ho buloa Te doped kapa Ge doped 2inch 3inch 4inch botenya ba li-wafers tsa Indium Antimonide (InSb)
Likaroloana
Likhetho tsa Doping:
1. E sa buloa:Li-wafers tsena ha li na li-agents tsa doping, tse li etsang hore li loketse lits'ebetso tse ikhethileng joalo ka kholo ea epitaxial.
2.Te Doped (N-Type):Tellurium (Te) doping e atisa ho sebelisoa ho etsa li-wafers tsa mofuta oa N, tse loketseng lisebelisoa tse kang li-detectors tsa infrared le li-electronics tsa lebelo le phahameng.
3.Ge Doped (P-Type):Germanium (Ge) doping e sebelisoa ho etsa li-wafers tsa mofuta oa P, tse fanang ka motsamao o phahameng oa lesoba bakeng sa lits'ebetso tse tsoetseng pele tsa semiconductor.
Likhetho tsa boholo:
1.E fumaneha ka bophara ba 2-inch, 3-inch, le 4-inch. Li-wafers tsena li fana ka litlhoko tse fapaneng tsa theknoloji, ho tloha ho lipatlisiso le nts'etsopele ho isa ho tlhahiso e kholo.
2.Mamello e nepahetseng ea bophara e netefatsa ho tsitsisa ho pholletsa le lihlopha, ka bophara ba 50.8±0.3mm (bakeng sa li-wafers tse 2-inch) le 76.2±0.3mm (bakeng sa li-wafers tse 3-inch).
Taolo ea Botenya:
1.Li-wafers li fumaneha ka botenya ba 500±5μm bakeng sa ts'ebetso e nepahetseng lits'ebetsong tse fapaneng.
2.Litekanyo tse eketsehileng tse kang TTV (Total Thickness Variation), BOW, le Warp li laoloa ka hloko ho netefatsa ho tšoana ho phahameng le boleng.
Boleng ba Sebaka:
1.Li-wafers li tla le sebaka se betliloeng / se khabisitsoeng bakeng sa ts'ebetso e ntlafetseng ea optical le motlakase.
2.Makarolo ana a loketse bakeng sa kholo ea epitaxial, e fana ka motheo o boreleli bakeng sa ts'ebetso e eketsehileng ka lisebelisoa tse phahameng tsa ts'ebetso.
Epi-Ready:
1. Li-wafers tsa InSb li se li loketse epi, ho bolelang hore li nkiloe esale pele bakeng sa lits'ebetso tsa epitaxial deposition. Sena se li etsa hore li tšoanelehe bakeng sa lits'ebetso tsa tlhahiso ea semiconductor moo likarolo tsa epitaxial li hlokang ho holisoa ka holim'a sephaphatha.
Lisebelisoa
1. Li-Detector tsa Infrared:Li-wafers tsa InSb li sebelisoa hangata ho lemoha infrared (IR), haholo-holo sebakeng sa bohareng ba leqhubu la infrared (MWIR). Li-wafers tsena li bohlokoa bakeng sa pono ea bosiu, litšoantšo tsa mocheso, le lisebelisoa tsa spectroscopy tsa infrared.
2.Motlakase oa Lebelo le Phahameng:Ka lebaka la ho tsamaea ha elektronike e phahameng, li-wafers tsa InSb li sebelisoa lisebelisoa tsa elektronike tse lebelo tse kang li-transistors tse phahameng haholo, lisebelisoa tsa quantum well, le li-high-electron mobility transistors (HEMTs).
Lisebelisoa tsa 3.Quantum Well:Lekhalo le moqotetsane le motsamao o motle oa elektronike li etsa hore li-wafers tsa InSb li loketse ho sebelisoa lisebelisoa tsa liliba tsa quantum. Lisebelisoa tsena ke likarolo tsa bohlokoa ho li-lasers, li-detectors le lisebelisoa tse ling tsa optoelectronic.
Lisebelisoa tsa 4.Spintronic:InSb e boetse e ntse e hlahlojoa lits'ebetsong tsa spintronic, moo electron spin e sebelisetsoang ho sebetsana le tlhahisoleseding. Thepa e tlase ea spin-orbit coupling e etsa hore e loketse lisebelisoa tsena tse sebetsang hantle haholo.
5.Terahertz (THz) Lisebelisoa tsa Radiation:Lisebelisoa tse thehiloeng ho InSb li sebelisoa lits'ebetsong tsa mahlaseli a THz, ho kenyelletsa le lipatlisiso tsa mahlale, litšoantšo, le sebopeho sa thepa. Ba thusa mahlale a tsoetseng pele joalo ka THz spectroscopy le THz imaging system.
6. Thermoelectric Devices:Thepa e ikhethang ea InSb e etsa hore e be thepa e khahlang bakeng sa lits'ebetso tsa thermoelectric, moo e ka sebelisoang ho fetolela mocheso hore e be motlakase hantle, haholo lits'ebetsong tsa niche joalo ka theknoloji ea sebaka kapa tlhahiso ea matla libakeng tse feteletseng.
Lihlahisoa tsa lihlahisoa
| Paramethara | 2-inch | 3-inch | 4-inch |
| Diameter | 50.8±0.3mm | 76.2±0.3mm | - |
| Botenya | 500±5μm | 650±5μm | - |
| Bokaholimo | E hloekisitsoe/ E tiisitsoe | E hloekisitsoe/ E tiisitsoe | E hloekisitsoe/ E tiisitsoe |
| Mofuta oa Doping | E sa buloa, Te-doped (N), Ge-doped (P) | E sa buloa, Te-doped (N), Ge-doped (P) | E sa buloa, Te-doped (N), Ge-doped (P) |
| Boitloaelo | (100) | (100) | (100) |
| Sephutheloana | Motho a le mong | Motho a le mong | Motho a le mong |
| Epi-Ready | Ee | Ee | Ee |
Mekhahlelo ea Motlakase bakeng sa Te Doped (Mofuta oa N-Mofuta):
- Motsamao: 2000-5000 cm²/V·s
- Ho hanyetsa: (1-1000) Ω·cm
- EPD (Defect Density): ≤2000 liphoso/cm²
Mekhahlelo ea Motlakase bakeng sa Ge Doped (P-Type):
- Motsamao: 4000-8000 cm²/V·s
- Ho hanyetsa: (0.5-5) Ω·cm
- EPD (Defect Density): ≤2000 liphoso/cm²
Qetello
Li-wafers tsa Indium Antimonide (InSb) ke lisebelisoa tsa bohlokoa bakeng sa mefuta e mengata e fapaneng ea ts'ebetso e phahameng lefapheng la lisebelisoa tsa elektroniki, optoelectronics, le theknoloji ea infrared. Ka motsamao oa tsona o motle oa elektrone, khokahano e tlase ea spin-orbit, le mefuta e fapaneng ea khetho ea doping (Te for N-type, Ge for P-type), li-wafers tsa InSb li loketse ho sebelisoa lisebelisoa tse kang li-infrared detectors, li-transistor tse lebelo le phahameng, lisebelisoa tsa seliba sa quantum, le lisebelisoa tsa spintronic.
Li-wafers li fumaneha ka boholo bo fapaneng (2-inch, 3-inch, le 4-inch), tse nang le taolo e nepahetseng ea botenya le libaka tse lokiselitsoeng epi, ho netefatsa hore li kopana le litlhoko tse thata tsa tlhahiso ea semiconductor ea sejoale-joale. Li-wafers tsena li nepahetse bakeng sa lits'ebetso likarolong tse kang ho lemoha IR, lisebelisoa tsa elektroniki tsa lebelo le phahameng, le mahlaseli a THz, a nolofalletsang mahlale a tsoetseng pele lipatlisisong, indastering le ts'ireletso.
Setšoantšo se qaqileng
