N-Type SiC Composite Substrates Dia6inch Monocrystaline ea boleng bo holimo le substrate ea boleng bo tlase

Tlhaloso e Khutšoanyane:

N-Type SiC Composite Substrates ke thepa ea semiconductor e sebelisoang tlhahisong ea lisebelisoa tsa elektroniki. Li-substrates tsena li entsoe ka silicon carbide (SiC), motsoako o tsejoang ka ho tsamaisa mocheso o motle haholo, matla a phahameng a ho senyeha, le ho hanyetsa maemo a thata a tikoloho.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

N-Type SiC Composite Substrates Tafole e tloaelehileng ea parameter

项目Lintho 指标Tlhaloso 项目Lintho 指标Tlhaloso
直径Diameter 150±0.2mm ( 硅 面 ) 粗 糙 度
Boka pele (si-face) /si-fahleng
Ra≤0.2nm (5μm*5μm)
晶型Polytype 4H Edge Chip, Scratch, Crack (tlhahlobo ea pono) Ha ho letho
电阻率Ho hanyetsa 0.015-0.025ohm ·cm 总厚度变化TTV ≤3μm
Fetisetsa lera Botenya ≥0.4μm 翘曲度Warp ≤35μm
空洞Lefeela ≤5ea/wafer (2mm>D>0.5mm) 总厚度Botenya 350±25μm

Lebitso la "N-mofuta" le bolela mofuta oa doping o sebelisoang lisebelisoa tsa SiC. Ho fisiks ea semiconductor, doping e kenyelletsa ho kenyelletsa litšila ka boomo ho semiconductor ho fetola thepa ea eona ea motlakase. Doping ea mofuta oa N e hlahisa likarolo tse fanang ka lielektrone tse sa lefelloeng tse ngata, e leng se fanang ka boitsebiso bo sa tsitsang.

Melemo ea li-substrates tse kopaneng tsa mofuta oa N-SiC li kenyelletsa:

1. Ts'ebetso e phahameng ea mocheso: SiC e na le mocheso o phahameng oa mocheso 'me e ka sebetsa ka mocheso o phahameng, e leng se etsang hore e tšoanelehe bakeng sa lisebelisoa tsa elektronike tse matla le tse phahameng.

2. Matla a phahameng a ho senya: Lisebelisoa tsa SiC li na le matla a phahameng a ho senya, a li nolofalletsang ho mamella libaka tse phahameng tsa motlakase ntle le ho senyeha ha motlakase.

3. Ho hanyetsa lik'hemik'hale le tikoloho: SiC e hanyetsa lik'hemik'hale 'me e khona ho mamella maemo a thata a tikoloho, e leng se etsang hore e tšoanelehe ho sebelisoa lits'ebetsong tse thata.

4. Ho fokotsa matla a ho lahleheloa ke matla: Ha ho bapisoa le lisebelisoa tse tloaelehileng tsa silicon-based, li-substrates tsa SiC li nolofalletsa ho fetola matla ka katleho le ho fokotsa tahlehelo ea matla ho lisebelisoa tsa elektronike.

5. Wide bandgap: SiC e na le sekhahla se pharaletseng, se lumellang nts'etsopele ea lisebelisoa tsa elektronike tse ka sebetsang ka mocheso o phahameng le matla a phahameng a matla.

Ka kakaretso, li-substrates tse kopantsoeng tsa mofuta oa N-mofuta oa SiC li fana ka melemo ea bohlokoa bakeng sa nts'etsopele ea lisebelisoa tsa elektroniki tse sebetsang hantle haholo, haholo lits'ebetsong moo ts'ebetso ea mocheso o phahameng, matla a phahameng a matla, le phetolo ea matla e sebetsang hantle li leng bohlokoa.


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  • E 'ngoe:

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