N-Mofuta oa SiC ho Si Composite Substrates Dia6inch

N-Type SiC ho Si Composite Substrates Dia6inch Setšoantšo se Featured

Tlhaloso e Khutšoanyane:

N-Type SiC on Si composite substrates ke lisebelisoa tsa semiconductor tse nang le lera la n-type silicon carbide (SiC) e kentsoeng holim'a silicon (Si) substrate.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

等级Kereiti	U 级	P级	D级
	Kereiti e tlase ea BPD	Kereiti ya Tlhahiso	Sehlopha sa Dummy
直径Diameter	150.0 mm± 0.25mm
厚度Botenya	500 μm±25μm
晶片方向Wafer Orientation	Off axis : 4.0° ho ea <11-20 > ±0.5° bakeng sa 4H-N Holima axis : <0001>±0.5°bakeng sa 4H-SI
主定位边方向Primary Flat	{10-10}±5.0°
主定位边长度Bolelele ba Phatlalatso ba Pele	47.5 mm± 2.5 limilimithara
边缘Kenyelletso ea moeli	3 limilimithara
总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp	≤15μm /≤40μm /≤60μm
微管密度和基面位错MPD & BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Ho hanyetsa	≥1E5 Ω·cm
表面粗糙度Boqhobane	Polish Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Ha ho letho		Bolelele bo akaretsang ≤10mm, bolelele bo le bong≤2mm
Mapetso ka khanya e phahameng
六方空洞（强光灯观测）*	Kakaretso ≤1%		Kakaretso ≤5%
Hex Plates ka khanya e matla e phahameng
多型(强光灯观测)*	Ha ho letho		Kakaretso≤5%
Libaka tsa Polytype ka khanya e matla e phahameng
划痕(强光灯观测)*&	Mekhoro e 3 ho isa ho 1 × bophara ba wafer		Mengoako e 5 ho isa ho 1 × bophara ba wafer
E mengoapo ka khanya e matla haholo	bolelele bo bokellaneng		bolelele bo bokellaneng
崩边# Chip ea Edge	Ha ho letho		5 e lumelletsoe, ≤1 mm ka 'ngoe
表面污染物 (强光灯观测）	Ha ho letho
Ho silafatsoa ke khanya e matla haholo