SiC ea Mofuta oa N ho Si Composite Substrates Dia6inch
| 等级Sehlopha | U 级 | P级 | D级 |
| Sehlopha se Tlase sa BPD | Kereiti ea Tlhahiso | Sehlopha sa Mashano | |
| 直径Bophara | 150.0 mm±0.25mm | ||
| 厚度Botenya | 500 μm±25μm | ||
| 晶片方向Boikutlo ba Wafer | Ase e sa sebetseng: 4.0°ho ea ho < 11-20 > ± 0.5°bakeng sa 4H-N Ase e sa sebetseng: <0001>± 0.5°bakeng sa 4H-SI | ||
| 主定位边方向Folete ea Pele | {10-10}±5.0° | ||
| 主定位边长度Bolelele ba Sephara ba Motheo | 47.5 mm±2.5 mm | ||
| 边缘Ho se kenyelletsoe moeling | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD le BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Ho hanyetsa | ≥1E5 Ω·cm | ||
| 表面粗糙度Ho ba le makukuno | Ra≤1 nm ea Poland | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Ha ho letho | Bolelele bo bokellaneng ≤10mm, bolelele bo le bong ≤2mm | |
| Mapetso a bakoang ke khanya e matla haholo | |||
| 六方空洞（强光灯观测）* | Sebaka se bokellaneng ≤1% | Sebaka se bokellaneng ≤5% | |
| Lipoleiti tsa Hex ka khanya e matla haholo | |||
| 多型(强光灯观测)* | Ha ho letho | Sebaka se bokellaneng ≤5% | |
| Libaka tsa Polytype ka khanya e matla haholo | |||
| 划痕(强光灯观测)*& | Mekwatla e 3 ho isa ho 1 × bophara ba wafer | Mekwatla e 5 ho isa ho 1 × bophara ba wafer | |
| Ho ngoatheloa ke khanya e matla haholo | bolelele bo kopantsweng | bolelele bo kopantsweng | |
| 崩边# Chip ea Edge | Ha ho letho | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |
| 表面污染物 (强光灯观测） | Ha ho letho | ||
| Tšilafalo e bakoang ke khanya e matla haholo | |||
Setšoantšo se qaqileng
