The silicon carbide substrate e arotsoe ka mofuta oa semi-insulating le mofuta oa conductive. Hajoale, tlhahiso ea mantlha ea lihlahisoa tsa semi-insulated silicon carbide ke lisenthimithara tse 4. Mmarakeng oa conductive silicon carbide, tlhahiso ea hajoale ea sehlahisoa sa substrate ke lisenthimithara tse 6.
Ka lebaka la lits'ebetso tse tlase sebakeng sa RF, li-substrate tsa SiC tse kentsoeng ka semi-insulated le lisebelisoa tsa epitaxial li tlas'a taolo ea ho romela thepa ke Lefapha la Khoebo la US. Semi-insulated SiC e le substrate ke thepa e ratoang bakeng sa GaN heteroepitaxy 'me e na le menyetla ea bohlokoa ea ts'ebeliso tšimong ea microwave. Ha ho bapisoa le ho se lumellane ha kristale ea safire 14% le Si 16.9%, ho se lumellane ha kristale ea thepa ea SiC le GaN ke 3.4% feela. Ha e kopane le ultra-high thermal conductivity ea SiC, The high energy performance LED le GaN high frequency le lisebelisoa tse phahameng tsa microwave tse lokiselitsoeng ke eona li na le melemo e meholo ho radar, lisebelisoa tsa microwave tse matla le mekhoa ea puisano ea 5G.
Patlisiso le nts'etsopele ea karoloana ea SiC e kentsoeng ka semi-insulated esale e ntse e le sepheo sa lipatlisiso le nts'etsopele ea SiC single crystal substrate. Ho na le mathata a mabeli a mantlha a ho holisa thepa ea SiC e kentsoeng ka semi-insulated:
1) Fokotsa litšila tsa bafani ba N tse hlahisoang ke graphite crucible, adsorption ea mocheso oa mocheso le doping ka phofo;
2) Ha ho ntse ho netefatsa boleng le thepa ea motlakase ea kristale, setsi sa boemo bo tebileng se hlahisoa ho lefella litšila tse setseng tse sa tebang ka ts'ebetso ea motlakase.
Hajoale, bahlahisi ba nang le bokhoni ba tlhahiso ea SiC ea semi-insulated ke haholo-holo SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
The conductive SiC kristale e finyelloa ka ho kenya naetrojene sebakeng se ntseng se hola. Conductive silicon carbide substrate e sebelisoa haholo ha ho etsoa lisebelisoa tsa matla, lisebelisoa tsa matla tsa silicon carbide tse nang le voltage e phahameng, hona joale, mocheso o phahameng, maqhubu a phahameng, tahlehelo e tlase le melemo e meng e ikhethang, e tla ntlafatsa haholo ts'ebeliso e teng ea lisebelisoa tsa matla tsa silicon. ts'ebetso ea phetoho, e na le tšusumetso e kholo le e kholo tšimong ea ho fetola matla a matla. Libaka tse ka sehloohong tsa kopo ke likoloi tsa motlakase / liqubu tsa ho tjhaja, matla a macha a photovoltaic, lipalangoang tsa terene, marang-rang a bohlale joalo-joalo. Hobane thepa e tlaase ea lihlahisoa tse tsamaisang haholo ke lisebelisoa tsa motlakase likoloing tsa motlakase, photovoltaic le masimo a mang, tebello ea kopo e pharaletseng, 'me bahlahisi ba bangata.
Silicon carbide crystal mofuta: Sebopeho se tloaelehileng sa 4H crystalline silicon carbide e ntle ka ho fetisisa e ka aroloa ka mekhahlelo e 'meli, e' ngoe ke mofuta oa cubic silicon carbide crystal mofuta oa sebopeho sa sphalerite, se tsejoang e le 3C-SiC kapa β-SiC, 'me se seng ke sa hexagonal. kapa sebopeho sa daemane sa mohaho o moholo oa nako, o tloaelehileng oa 6H-SiC, 4H-sic, 15R-SiC, joalo-joalo, e tsejoang e le α-SiC. 3C-SiC e na le molemo oa ho hanyetsa ho phahameng ho lisebelisoa tsa tlhahiso. Leha ho le joalo, ho se lumellane ho phahameng pakeng tsa Si le SiC lattice constants le li-coefficients tsa ho atolosa mocheso ho ka lebisa ho palo e kholo ea bokooa ho 3C-SiC epitaxial layer. 4H-SiC e na le bokhoni bo boholo ba ho etsa li-MOSFET, hobane kholo ea eona ea kristale le mekhoa ea ho hōla ha epitaxial layer e ntle haholo, 'me mabapi le ho tsamaea ha elektronike, 4H-SiC e phahame ho feta 3C-SiC le 6H-SiC, e fana ka litšobotsi tse ntle tsa microwave bakeng sa 4H. -SiC MOSFETs.
Haeba ho na le tlolo ea molao, hlakola lebitso
Nako ea poso: Jul-16-2024