Karoloana ea silicon carbide e arotsoe ka mofuta oa semi-insulation le mofuta oa conductive. Hona joale, tlhaloso e kholo ea lihlahisoa tsa substrate ea silicon carbide tse semi-insulated ke lisenthimithara tse 4. 'Marakeng oa silicon carbide e tsamaisang motlakase, tlhaloso ea hona joale ea sehlahisoa sa substrate e kholo ke lisenthimithara tse 6.
Ka lebaka la lits'ebetso tse theohelang tšimong ea RF, li-substrate tsa SiC tse se nang mocheso o lekaneng le thepa ea epitaxial li laoloa ke Lefapha la Khoebo la US. SiC e se nang mocheso o lekaneng e le substrate ke thepa e khethiloeng bakeng sa heteroepitaxy ea GaN 'me e na le menyetla ea bohlokoa ea ts'ebeliso tšimong ea microwave. Ha e bapisoa le ho se lumellane ha kristale ha safire 14% le Si 16.9%, ho se lumellane ha kristale ha thepa ea SiC le GaN ke 3.4% feela. Ha e kopantsoe le conductivity ea mocheso o phahameng haholo ea SiC, Lisebelisoa tsa microwave tse sebetsang hantle haholo tsa LED le GaN tse nang le maqhubu a phahameng le tse nang le matla a phahameng tse lokiselitsoeng ke eona li na le melemo e meholo ho radar, lisebelisoa tsa microwave tse nang le matla a phahameng le litsamaiso tsa puisano tsa 5G.
Patlisiso le ntshetsopele ya substrate ya SiC e sa keneng ka semi-insulated esale e le ntlha ya bohlokwa ya dipatlisiso le ntshetsopele ya substrate ya kristale e le nngwe ya SiC. Ho na le mathata a mabedi a maholo ho hodiseng thepa ya SiC e sa keneng ka semi-insulated:
1) Fokotsa litšila tsa mofani oa N tse hlahisoang ke graphite crucible, thermal insulation adsorption le doping ka phofo;
2) Ha ho ntse ho netefatsoa boleng le thepa ea motlakase ea kristale, setsi se tebileng se kenngoa ho lefella litšila tse setseng tsa boemo bo sa tebang ka ts'ebetso ea motlakase.
Hona jwale, bahlahisi ba nang le bokgoni ba tlhahiso ya SiC bo sa kenngweng mochesong haholoholo ke SICC Co，Semisic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Kristale ea SiC e tsamaisang motlakase e finyelloa ka ho kenya naetrojene sepakapakeng se ntseng se hola. Karolo e tsamaisang motlakase ea silicon carbide e sebelisoa haholo-holo tlhahisong ea lisebelisoa tsa motlakase, lisebelisoa tsa motlakase tsa silicon carbide tse nang le motlakase o phahameng, motlakase o phahameng, mocheso o phahameng, maqhubu a phahameng, tahlehelo e tlase le melemo e meng e ikhethang, e tla ntlafatsa haholo ts'ebeliso e teng ea lisebelisoa tsa motlakase tse thehiloeng ho silicon, e na le tšusumetso e kholo le e tebileng tšimong ea phetoho e sebetsang ea matla. Libaka tse ka sehloohong tsa ts'ebeliso ke likoloi tsa motlakase/li-pile tsa ho tjhaja, matla a macha a photovoltaic, lipalangoang tsa terene, gridi e bohlale le tse ling. Hobane karolo e ka tlase ea lihlahisoa tse tsamaisang motlakase ke lisebelisoa tsa motlakase haholo-holo likoloing tsa motlakase, photovoltaic le masimo a mang, tebello ea ts'ebeliso e pharaletse, 'me bahlahisi ba bangata haholo.
Mofuta oa kristale ea silicon carbide: Sebopeho se tloaelehileng sa carbide e ntle ka ho fetisisa ea kristale ea 4H e ka aroloa ka mekhahlelo e 'meli, e 'ngoe ke mofuta oa kristale ea silicon carbide ea cubic ea sebopeho sa sphalerite, e tsejoang e le 3C-SiC kapa β-SiC, 'me e 'ngoe ke sebopeho sa hexagonal kapa daemane sa sebopeho se seholo sa nako, e leng se tloaelehileng sa 6H-SiC, 4H-sic, 15R-SiC, jj., e tsejoang ka kakaretso e le α-SiC. 3C-SiC e na le monyetla oa ho hanyetsa haholo lisebelisoa tsa tlhahiso. Leha ho le joalo, ho se lumellane ho hoholo pakeng tsa li-constant tsa lattice tsa Si le SiC le li-coefficients tsa katoloso ea mocheso ho ka lebisa palong e kholo ea liphoso lera la epitaxial la 3C-SiC. 4H-SiC e na le bokgoni bo boholo ba ho hlahisa di-MOSFET, hobane ditshebetso tsa yona tsa kgolo ya kristale le kgolo ya lera la epitaxial di ntle haholo, mme mabapi le ho tsamaya ha dielektrone, 4H-SiC e hodimo ho feta 3C-SiC le 6H-SiC, e fanang ka dibopeho tse betere tsa microwave bakeng sa di-MOSFET tsa 4H-SiC.
Haeba ho na le tlōlo ea molao, ikopanye le ho hlakola
Nako ea poso: Phupu-16-2024