Lisebelisoa tsa semiconductor li bile teng ka meloko e meraro e fetohang:
1st Gen (Si/Ge) e thehile motheo oa lisebelisoa tsa elektroniki tsa sejoale-joale,
2nd Gen (GaAs/InP) e ile ea phunyeletsa litšitiso tsa optoelectronic le maqhubu a phahameng ho matlafatsa phetoho ea tlhahisoleseling,
3rd Gen (SiC/GaN) hona joale e sebetsana le mathata a matla le a feteletseng a tikoloho, a nolofalletsang ho se nke lehlakore ha carbon le nako ea 6G.
Tsoelo-pele ena e senola phetoho ea paradigm ho tloha ho feto-fetoha le maemo ho ea ho tsebo e khethehileng ea saense ea lintho tse bonahalang.
1. Li-Semiconductors tsa Moloko oa Pele: Silicon (Si) le Germanium (Ge)
Semelo sa Histori
Ka 1947, Bell Labs e ile ea qapa germanium transistor, e tšoaeang mafube a mehla ea semiconductor. Lilemong tsa bo-1950, silicon e ile ea nkela germanium sebaka butle-butle e le motheo oa li-circuits (IC) ka lebaka la lera la eona le tsitsitseng la oxide (SiO₂) le mehloli e mengata ea tlhaho.
Thepa ea Lintho
ⅠBandgap:
Germanium: 0.67eV (lekhalo le moqotetsane, le tloaetseng ho lutla hona joale, ts'ebetso e mpe ea mocheso o phahameng).
Silicon: 1.12eV (bandgap e sa tobang, e loketseng li-circuits tsa logic empa e sa khone ho ntša khanya).
Ⅱ,Melemo ea Silicon:
Ka tlhaho e etsa oxide ea boleng bo holimo (SiO₂), e nolofalletsang ho etsoa ha MOSFET.
Theko e tlase le e ngata ea lefats'e (~ 28% ea sebopeho sa crustal).
Ⅲ,Meeli:
Motsamao o tlase oa elektrone (feela 1500 cm²/(V·s)), o thibelang tšebetso ea maqhubu a holimo.
Mamello e fokolang ea motlakase/mocheso (mocheso o moholo oa ho sebetsa. ~150°C).
Lisebelisoa tsa Bohlokoa
Ⅰ,Lipotoloho tse Kopantsoeng (ICs):
Li-CPU, li-memory chips (mohlala, DRAM, NAND) li itšetlehile ka silicon bakeng sa ho kopanya ho hoholo.
Mohlala: Intel's 4004 (1971), microprocessor ea pele ea khoebo, e sebelisitse theknoloji ea silicon ea 10μm.
Ⅱ,Lisebelisoa tsa Matla:
Li-thyristors tsa pele le li-MOSFET tsa motlakase o tlase (mohlala, lisebelisoa tsa motlakase tsa PC) li ne li thehiloe ka silicon.
Mathata le ho Felloa ke Nako
Germanium e ile ea felisoa ka lebaka la ho lutla le ho se tsitse ha mocheso. Leha ho le joalo, mefokolo ea silicon ho optoelectronics le lisebelisoa tsa matla a phahameng li khothalelitse nts'etsopele ea li-semiconductors tsa mofuta o latelang.
Li-Semiconductors tsa 2Seconductors: Gallium Arsenide (GaAs) le Indium Phosphide (InP)
Tlhabollo Background
Lilemong tsa bo-1970-1980, masimo a ntseng a hlaha joalo ka likhokahano tsa mehala, marang-rang a fiber optical, le theknoloji ea sathelaete e ile ea theha tlhokahalo e matla ea lisebelisoa tsa optoelectronic tse tsamaeang khafetsa le tse sebetsang hantle. Sena se tsamaisitse tsoelo-pele ea li-semiconductors tse tobileng tse kang GaAs le InP.
Thepa ea Lintho
Ts'ebetso ea Bandgap le Optoelectronic:
Li-GaAs: 1.42eV (sehlopha se tobileng, se nolofalletsang ho ntša khanya-e loketseng li-lasers/LED).
InP: 1.34eV (e loketseng hamolemo bakeng sa lits'ebetso tsa bolelele bo bolelele, mohlala, likhokahano tsa 1550nm fiber-optic).
Elektrone Mobility:
GaAs e fihlella 8500 cm²/(V·s), silicon e fetang hole (1500 cm²/(V·s)), e e etsa hore e be e nepahetseng bakeng sa ts'ebetso ea mats'oao a GHz-range.
Mefokolo
lBrittle substrates: Ho thata ho e etsa ho feta silicon; Li-wafers tsa GaAs li bitsa 10 × ho feta.
lHa ho na oxide ea tlhaho: Ho fapana le SiO₂ ea silicon, GaAs/InP ha e na li-oxide tse tsitsitseng, e thibelang ho etsoa ha IC e phahameng haholo.
Lisebelisoa tsa Bohlokoa
lRF Front-Ends:
Li-amplifiers tsa mobile power (PAs), li-transceivers tsa sathelaete (mohlala, li-transistors tsa HEMT tse thehiloeng ho GaAs).
lOptoelectronics:
Laser diodes (CD/DVD drives), LEDs (red/infrared), fiber-optic modules (InP lasers).
lSpace Solar Cells:
Lisele tsa GaAs li finyella katleho ea 30% (vs. ~ 20% bakeng sa silicon), ea bohlokoa bakeng sa li-satellites.
lTheknoloji Bottlenecks
Litšenyehelo tse phahameng li kenya li-GaAs/InP ho lits'ebetso tse phahameng haholo, li li thibela ho tlosa taolo ea silicon ho li-chips tsa logic.
Li-Semiconductors tsa Moloko oa Boraro (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) le Gallium Nitride (GaN)
Bakhanni ba Theknoloji
Phetoho ea Matla: Likoloi tsa motlakase le khokahano ea grid ea matla e nchafalitsoeng li hloka lisebelisoa tse sebetsang hantle haholoanyane.
Litlhoko tsa Maqhubu a Phahameng: Likhokahano tsa 5G le litsamaiso tsa radar li hloka maqhubu a phahameng le matla a matla.
Tikoloho e Feteletseng: Lisebelisoa tsa sefofane le liindasteri li hloka lisebelisoa tse khonang ho mamella mocheso o fetang 200 ° C.
Litšobotsi tsa Lintho
Melemo ea Wide Bandgap:
lSiC: Bandgap ea 3.26eV, matla a matla a tšimo ea motlakase 10 × ea silicon, e khonang ho mamella maqhubu a fetang 10kV.
lGaN: Bandgap ea 3.4eV, motsamao oa elektrone oa 2200 cm²/(V·s), o ipabola ka tšebetso ea maqhubu a holimo.
Taolo ea Thermal:
SiC's conductivity ea mocheso e fihla ho 4.9 W / (cm·K), e betere ka makhetlo a mararo ho feta silicon, e etsa hore e be e loketseng bakeng sa lisebelisoa tse phahameng tsa matla.
Mathata a Lintho
SiC: Khōlo e liehang ea kristale e le 'ngoe e hloka mocheso o ka holimo ho 2000 ° C, e leng se bakang mefokolo ea liphaephe le litšenyehelo tse phahameng (sephaphatha sa 6-inch SiC ke 20 × e theko e boima ho feta silicon).
GaN: Ha e na substrate ea tlhaho, hangata e hlokang heteroepitaxy holim'a sapphire, SiC, kapa silicon substrates, e lebisang ho mathata a fapaneng a marang-rang.
Lisebelisoa tsa Bohlokoa
Motlakase oa Motlakase:
Li-inverters tsa EV (mohlala, Tesla Model 3 e sebelisa SiC MOSFETs, ho ntlafatsa katleho ka 5-10%).
Liteishene / li-adapter tse tjhajang ka potlako (Lisebelisoa tsa GaN li nolofalletsa 100W+ ho tjhaja kapele ha li ntse li fokotsa boholo ka 50%).
Lisebelisoa tsa RF:
Li-amplifiers tsa motlakase tsa setsi sa 5G (GaN-on-SiC PAs e tšehetsa maqhubu a mmWave).
Radar ea sesole (GaN e fana ka 5 × matla a matla a GaAs).
Optoelectronics:
Li-LED tsa UV (lisebelisoa tsa AlGaN tse sebelisoang ho thibela likokoana-hloko le ho lemoha boleng ba metsi).
Boemo ba Indasteri le Pono ea Bokamoso
SiC e laola 'maraka oa matla a phahameng, ka li-module tsa boemo ba likoloi tse seng li ntse li hlahisoa ka bongata, le hoja litšenyehelo li ntse li le mokoallo.
GaN e ntse e hola ka potlako ho lisebelisoa tsa elektroniki tsa bareki (ho tjhaja kapele) le lits'ebetso tsa RF, e fetela ho li-wafers tsa 8-inch.
Lisebelisoa tse hlahang tse kang gallium oxide (Ga₂O₃, bandgap 4.8eV) le daemane (5.5eV) li ka theha "moloko oa bone" oa li-semiconductors, tse hatellang meeli ea motlakase ho feta 20kV.
Tšebelisano 'moho le Synergy ea Semiconductor Generations
Ho tlatsana, eseng ho Fetola Sebaka:
Silicon e lula e le eona e ka sehloohong ho li-logic chips le lisebelisoa tsa elektroniki tsa bareki (95% ea 'maraka oa lefats'e oa semiconductor).
Li-GaAs le InP li sebetsa ka ho khetheha ho li-niches tse phahameng haholo le tsa optoelectronic.
SiC/GaN ha e khonehe ho sebelisoa matla le indastering.
Mehlala ea Kopanyo ea Theknoloji:
GaN-on-Si: E kopanya GaN le likaroloana tsa silicon tse theko e tlaase bakeng sa ho tjhaja ka potlako le lisebelisoa tsa RF.
Li-module tsa hybrid tsa SiC-IGBT: Ntlafatsa katleho ea ho fetola gridi.
Mekhoa ea Kamoso:
Ho kopanya ho fapaneng: Ho kopanya lisebelisoa (mohlala, Si + GaN) ho chip e le 'ngoe ho leka-lekanya ts'ebetso le litšenyehelo.
Lisebelisoa tse pharalletseng tsa li-bandgap (mohlala, Ga₂O₃, daemane) li ka thusa li-ultra-high-voltage (>20kV) le lisebelisoa tsa quantum computing.
Tlhahiso e amanang
GaAs laser epitaxial wafer 4 inch 6 inch
12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse bakeng sa mocheso o phahameng oa lisebelisoa tsa mocheso
Nako ea poso: May-07-2025