Lisebelisoa tsa semiconductor tsa moloko oa pele tsa moloko oa bobeli

Lisebelisoa tsa semiconductor li fetohile ka meloko e meraro e fetohang:

 

Moloko oa Pele (Si/Ge) o thehile motheo oa lisebelisoa tsa elektroniki tsa sejoale-joale,

Moloko oa Bobeli (GaAs/InP) o ile oa phunyeletsa litšitiso tsa optoelectronic le tsa maqhubu a phahameng ho matlafatsa phetoho ea tlhahisoleseling,

Moloko oa Boraro (SiC/GaN) joale o sebetsana le mathata a matla le tikoloho e feteletseng, o nolofalletsa ho se nke lehlakore ha khabone le mehla ea 6G.

 

Kgatelopele ena e senola phetoho e bonahalang ho tloha ho feto-fetoha ha maemo ho ya ho hlwahlwa ha saense ya dintho tse bonahalang.

Lisebelisoa tsa semiconductor

1. Li-semiconductor tsa Moloko oa Pele: Silicon (Si) le Germanium (Ge)

 

Semelo sa Nalane

Ka 1947, Bell Labs e ile ea qapa transistor ea germanium, e tšoaeang ho qala ha mehla ea semiconductor. Lilemong tsa bo-1950, silicon e ile ea nka sebaka sa germanium butle-butle e le motheo oa lipotoloho tse kopantsoeng (ICs) ka lebaka la lera la eona le tsitsitseng la oxide (SiO₂) le mehloli e mengata ea tlhaho.

 

Thepa ea Thepa

Lekhalo la lekhalo:

Germanium: 0.67eV (lekhalo le lesesaane, le sekametseng ho dutla ha motlakase, tshebetso e mpe ya mocheso o phahameng).

 

Silicone: 1.12eV (lekhalo le sa tobang la bandgap, le loketse dipotoloho tsa logic empa le sa kgone ho ntsha kganya).

 

Ⅱ,Melemo ea Silicone:

Ka tlhaho e etsa oxide ea boleng bo holimo (SiO₂), e nolofalletsang tlhahiso ea MOSFET.

Litšenyehelo tse tlase le tse ngata tsa mobu (~28% ea motsoako oa crustal).

 

Ⅲ,Meeli:

Ho tsamaea ha dielektrone ka tlase (1500 cm²/(V·s) feela), ho thibela tshebetso ya maqhubu a phahameng.

Ho mamella ha motlakase/mocheso o fokolang (mocheso o phahameng ka ho fetisisa oa ts'ebetso. ~150°C).

 

Litšebeliso tsa Bohlokoa

 

Ⅰ,Dipotoloho tse Kopantsweng (di-IC):

Li-CPU, li-memory chip (mohlala, DRAM, NAND) li itšetlehile ka silicon bakeng sa bongata bo phahameng ba kopanyo.

 

Mohlala: 4004 ea Intel (1971), microprocessor ea pele ea khoebo, e sebelisitse theknoloji ea silicon ea 10μm.

 

Ⅱ,Lisebelisoa tsa Motlakase:

Li-thyristors tsa pele le li-MOSFET tse nang le motlakase o tlase (mohlala, lisebelisoa tsa motlakase tsa PC) li ne li thehiloe ho silicon.

 

Liphephetso le ho Siuoa ke Nako

 

Germanium e ile ea felisoa ka lebaka la ho dutla le ho se tsitse ha mocheso. Leha ho le joalo, mefokolo ea silicon ho optoelectronics le lits'ebetsong tse matla a phahameng e ile ea susumetsa nts'etsopele ea li-semiconductor tsa moloko o latelang.

Li-semiconductor tsa Moloko oa Bobeli tsa 2: Gallium Arsenide (GaAs) le Indium Phosphide (InP)

Semelo sa Nts'etsopele

Nakong ea lilemo tsa bo-1970-1980, masimo a macha a kang puisano ea mehala ea thekeng, marang-rang a faeba ea optical, le theknoloji ea sathelaete li ile tsa baka tlhoko e matla ea lisebelisoa tsa optoelectronic tse sebetsang hantle le tse sebetsang hantle. Sena se ile sa khanna tsoelo-pele ea li-semiconductor tsa bandgap tse tobileng joalo ka GaAs le InP.

Thepa ea Thepa

Tshebetso ya Bandgap le Optoelectronic:

GaAs: 1.42eV (lekhalo le tobileng la leqhubu, le nolofalletsa ho ntshuwa ha lesedi—e loketse di-laser/LED).

InP: 1.34eV (e loketse haholoanyane lits'ebetsong tsa bolelele ba maqhubu a malelele, mohlala, puisano ea fiber-optic ea 1550nm).

Ho Tsamaea ha Elektrone:

GaAs e fihlella 8500 cm²/(V·s), e feta silicon haholo (1500 cm²/(V·s)), e leng se etsang hore e be ntle bakeng sa ts'ebetso ea matshwao a GHz-range.

Mathata

lLi-substrate tse brittle: Ho thata ho li etsa ho feta silicon; li-wafer tsa GaAs li bitsa chelete e fetang 10×.

lHa ho na oxide ya tlhaho: Ho fapana le SiO₂ ya silicon, GaAs/InP ha e na di-oxide tse tsitsitseng, e leng se sitisang tlhahiso ya IC e nang le bongata bo boholo.

Litšebeliso tsa Bohlokoa

lLiphetho tsa RF tse ka Pele:

Li-amplifier tsa matla a selefouno (li-PA), li-transceiver tsa sathelaete (mohlala, li-transistors tsa HEMT tse thehiloeng ho GaAs).

lLisebelisoa tsa Optoelectronics:

Diode tsa laser (di-drive tsa CD/DVD), di-LED (tse kgubedu/tse nang le infrared), di-module tsa fiber-optic (di-laser tsa InP).

lLisele tsa Letsatsi tsa Sebaka:

Lisele tsa GaAs li fihlella katleho ea 30% (ha li bapisoa le ~20% bakeng sa silicon), e leng ea bohlokoa bakeng sa li-satellite. 

lLitšitiso tsa Theknoloji

Litšenyehelo tse phahameng li thibela GaAs/InP ho lits'ebetso tse phahameng, e leng se li thibelang ho tlosa puso ea silicon ho li-chip tsa logic.

Li-Semiconductor tsa Moloko oa Boraro (Li-Semiconductor tsa Wide-Bandgap): Silicon Carbide (SiC) le Gallium Nitride (GaN)

Bakhanni ba Theknoloji

Phetoho ea Matla: Likoloi tsa motlakase le kopanyo ea gridi ea matla a nchafatsoang li hloka lisebelisoa tsa motlakase tse sebetsang hantle haholoanyane.

Litlhoko tsa Maqhubu a Phahameng: Litsamaiso tsa puisano tsa 5G le radar li hloka maqhubu a phahameng le matla a mangata.

Tikoloho e Feteletseng: Lisebelisoa tsa lifofane le tsa liindasteri li hloka thepa e khonang ho mamella mocheso o fetang 200°C.

Litšobotsi tsa Boitsebiso

Melemo ea Lekhalo le Sephara la Bandgap:

lSiC: Lekhalo la leqhubu la 3.26eV, matla a tšimo ea motlakase a 10× a silicon, a khonang ho mamella li-voltage tse fetang 10kV.

lGaN: Lekhalo la leqhubu la 3.4eV, ho tsamaya ha dielektrone ha 2200 cm²/(V·s), e ipabola tshebetsong ya maqhubu a phahameng.

Tsamaiso ea Thermal:

Ho tsamaisa mocheso ha SiC ho fihla ho 4.9 W/(cm·K), ho feta silicon ka makgetlo a mararo, e leng se etsang hore e be ntle bakeng sa ditshebediso tse nang le matla a maholo.

Liphephetso tsa Lintho tse Bonahalang

SiC: Kgolo e liehang ya kristale e le nngwe e hloka mocheso o fetang 2000°C, e leng se fellang ka diphoso tsa wafer le ditjeo tse hodimo (wafer ya SiC ya di-inch tse 6 e bitsa tjhelete e fetang 20× ho feta silicon).

GaN: Ha e na substrate ea tlhaho, hangata e hloka heteroepitaxy holim'a substrate tsa safire, SiC, kapa silicon, e leng se lebisang mathateng a ho se lumellane ha lattice.

Litšebeliso tsa Bohlokoa

Lisebelisoa tsa Elektroniki tsa Matla:

Li-inverter tsa EV (mohlala, Tesla Model 3 e sebelisa li-SiC MOSFET, e ntlafatsang bokhoni ka 5–10%).

Liteishene/li-adapter tse tjhajang ka potlako (lisebelisoa tsa GaN li nolofalletsa ho tjhaja ka potlako ya 100W+ ha ka nako e ts'oanang li fokotsa boholo ka 50%).

Lisebelisoa tsa RF:

Li-amplifier tsa motlakase tsa seteishene sa motheo sa 5G (li-PA tsa GaN-on-SiC li tšehetsa maqhubu a mmWave).

Radar ea sesole (GaN e fana ka matla a 5× a GaAs).

Lisebelisoa tsa Optoelectronics:

Li-LED tsa UV (lisebelisoa tsa AlGaN tse sebelisoang ho bolaea likokoana-hloko le ho lemoha boleng ba metsi).

Boemo ba Indasteri le Tebello ea Bokamoso

SiC e laola 'maraka o nang le matla a mangata, ka li-module tsa maemo a likoloi tse seng li ntse li hlahisoa ka bongata, leha litšenyehelo li ntse li le tšitiso.

GaN e ntse e hola ka potlako ho lisebelisoa tsa elektroniki tsa bareki (ho tjhaja ka potlako) le lits'ebetsong tsa RF, e fetohela ho li-wafer tsa lisenthimithara tse 8.

Lisebelisoa tse hlahang tse kang gallium oxide (Ga₂O₃, bandgap 4.8eV) le daemane (5.5eV) li ka 'na tsa theha "moloko oa bone" oa li-semiconductor, tse sutumelletsang meeli ea motlakase ho feta 20kV.

Ho ba Teng 'Moho le Tšebelisano-'moho ea Meloko ea Semiconductor

Phethahatso, Eseng ho Nka Sebaka:

Silicon e ntse e le yona e hlahelletseng ho di-chip tsa logic le di-elektroniki tsa bareki (95% ya mmaraka wa lefatshe wa di-semiconductor).

GaAs le InP li ikhethile ka li-niches tse nang le maqhubu a phahameng le tsa optoelectronic.

SiC/GaN ha e nke sebaka lits'ebetsong tsa eneji le tsa indasteri.

Mehlala ea Kopanyo ea Theknoloji:

GaN-on-Si: E kopanya GaN le di-substrate tsa silicon tse theko e tlase bakeng sa ho tjhaja ka potlako le ditshebediso tsa RF.

Li-module tsa SiC-IGBT tse kopantsoeng: Ntlafatsa katleho ea phetoho ea gridi.

Mekhoa ea Nakong e Tlang:

Ho kopanya lintho tse sa tšoaneng: Ho kopanya thepa (mohlala, Si + GaN) ho chip e le 'ngoe ho leka-lekanya ts'ebetso le litšenyehelo.

Lisebelisoa tsa bandgap tse pharaletseng haholo (mohlala, Ga₂O₃, daemane) li ka nolofalletsa lits'ebetso tsa ultra-high-voltage (>20kV) le quantum computing.

Tlhahiso e amanang

GaAs laser epitaxial wafer 4 inch 6 inch

1 (2)

 

Sekoahelo sa SIC sa lisenthimithara tse 12 sa silicon carbide prime grade bophara 300mm boholo bo boholo 4H-N E loketse ho qhala mocheso oa sesebelisoa se nang le matla a mangata

12inch Sic wafer 1

 


Nako ea poso: Mots'eanong-07-2025