1. Selelekela
Ho sa tsotellehe dipatlisiso tse mashome a dilemo, heteroepitaxial 3C-SiC e hodisitsweng hodima di-substrate tsa silicon ha e so fihlelle boleng bo lekaneng ba kristale bakeng sa ditshebediso tsa elektroniki tsa diindasteri. Kgolo hangata e etswa hodima di-substrate tsa Si(100) kapa Si(111), e nngwe le e nngwe e hlahisa diphephetso tse ikgethang: dibaka tse kgahlanong le mokgahlelo bakeng sa (100) le ho petsoha bakeng sa (111). Le ha difilimi tse shebaneng le [111] di bontsha dibopeho tse tshepisang tse kang ho fokotseha ha sekoli, sebopeho se ntlafetseng sa bokahodimo, le kgatello e tlase, ditsela tse ding tse kang (110) le (211) di ntse di sa ithutilwe hantle. Dintlha tse teng di bontsha hore maemo a matle a kgolo a ka ba a ikgethang ka ho shebana, a thatafatsa dipatlisiso tse hlophisehileng. Haholoholo, tshebediso ya di-substrate tsa Si tse nang le index e hodimo ya Miller (mohlala, (311), (510)) bakeng sa heteroepitaxy ya 3C-SiC ha e so ka e tlalehwa, e siya sebaka se seholo sa dipatlisiso tse fuputswang mabapi le mekgwa ya kgolo e itshetlehileng ka ho shebana.
2. Teko
Mealo ea 3C-SiC e ile ea kenngoa ka mokhoa oa ho beha mouoane oa lik'hemik'hale ka khatello ea sepakapaka (CVD) ho sebelisoa likhase tsa pele tsa SiH4/C3H8/H2. Mealo e ne e le li-wafer tsa Si tse 1 cm² tse nang le litsela tse fapaneng: (100), (111), (110), (211), (311), (331), (510), (553), le (995). Mealo eohle e ne e le ka har'a axis ntle le (100), moo li-wafer tse sehiloeng ka 2° li ileng tsa lekoa hape. Ho hloekisa pele ho kholo ho ne ho kenyelletsa ho tlosoa ha mafura ka ultrasonic ka methanol. Mokhoa oa kholo o ne o kenyelletsa ho tlosoa ha oxide ea tlhaho ka ho kenngoa ha H2 ho 1000°C, ho lateloa ke ts'ebetso e tloaelehileng ea mehato e 'meli: ho kenngoa ka khabone metsotso e 10 ho 1165°C ka 12 sccm C3H8, ebe epitaxy metsotso e 60 ho 1350°C (C/Si ratio = 4) ho sebelisoa 1.5 sccm SiH4 le 2 sccm C3H8. Tekanyo e 'ngoe le e 'ngoe ea kholo e ne e kenyelletsa litsela tse 'ne ho isa ho tse hlano tse fapaneng tsa Si, ka bonyane wafer e le 'ngoe (100) ea referense.
3. Liphetho le Puisano
Sebopeho sa mealo ya 3C-SiC e hodisitsweng hodima mealo e fapaneng ya Si (Setshwantsho sa 1) se bontshitse dibopeho tse ikgethang tsa bokahodimo le ho se tsitse. Ka pono, disampole tse hodisitsweng hodima Si(100), (211), (311), (553), le (995) di ne di bonahala di tshwana le seipone, ha tse ding di ne di tloha ho tse kang lebese ((331), (510)) ho isa ho tse lerootho ((110), (111)). Mahlakore a boreleli ka ho fetisisa (a bontshang sebopeho se setle ka ho fetisisa sa microstructure) a fumanwe hodima mealo ya (100)2° le (995). Ka ho makatsang, mealo yohle e ile ya dula e se na mapetso ka mora ho phodisa, ho kenyeletswa le 3C-SiC(111) e atisang ho ba le kgatello ya maikutlo. Boholo bo fokolang ba sampole bo ka be bo thibetse ho petsoha, leha disampole tse ding di bontshitse ho kobeha (30-60 μm ho tloha bohareng ho ya pheletsong) tse ka lemohuwang tlasa microscopy ya optical ka kgolo ya 1000× ka lebaka la kgatello e bokellaneng ya mocheso. Mealo e kobehileng haholo e hodisitsweng hodima di-substrate tsa Si(111), (211), le (553) e bontshitse dibopeho tse kobehileng tse bontshang kgatello ya ho tetebela, e hlokang mosebetsi o mong wa teko le wa thuto ho amana le tshekamelo ya kristale.
Setšoantšo sa 1 se akaretsa liphetho tsa XRD le AFM (ho skena ho 20×20 μ m2) tsa mekhahlelo ea 3C-SC e holisitsoeng holim'a li-substrate tsa Si tse nang le litsela tse fapaneng.
Litšoantšo tsa microscopy ea matla a athomo (AFM) (Setšoantšo sa 2) li tiisitse litebello tsa mahlo. Litekanyetso tsa Root-mean-square (RMS) li tiisitse libaka tse boreleli ka ho fetisisa holim'a (100)2° off le (995) substrates, tse nang le meaho e kang ea lijo-thollo e nang le litekanyo tse ka thoko tsa 400-800 nm. Lera le holisitsoeng (110) e ne e le le thata ka ho fetisisa, ha likarolo tse telele le/kapa tse bapileng tse nang le meeli e bohale ka linako tse ling li hlahile libakeng tse ling ((331), (510)). Li-scans tsa X-ray diffraction (XRD) θ-2θ (tse akarelitsoeng ho Tafole ea 1) li senotse heteroepitaxy e atlehileng bakeng sa substrates tse tlaase tsa Miller-index, ntle le Si(110) e bontšitseng litlhōrō tse tsoakiloeng tsa 3C-SiC(111) le (110) tse bontšang polycrystallinity. Ho kopanya hona ha tataiso ho tlalehiloe pele bakeng sa Si(110), leha lithuto tse ling li bone 3C-SiC e ikhethileng (111), e bontšang hore ntlafatso ea boemo ba kholo e bohlokoa. Bakeng sa li-indices tsa Miller ≥5 ((510), (553), (995)), ha ho na litlhōrō tsa XRD tse fumanoeng ka mokhoa o tloaelehileng oa θ-2θ kaha lifofane tsena tse nang le index e phahameng ha li fapane ho geometry ena. Ho ba sieo ha litlhōrō tsa 3C-SiC tse nang le index e tlase (mohlala, (111), (200)) ho fana ka maikutlo a kholo ea kristale e le 'ngoe, e hlokang sampole e sekametseng ho lemoha ho falla ho tsoa lifofaneng tse nang le index e tlase.
Setšoantšo sa 2 se bonts'a palo ea sekhutlo sa sefofane ka har'a sebopeho sa kristale sa CFC.
Likhutlo tse baliloeng tsa kristale pakeng tsa lifofane tse nang le index e phahameng le tse nang le index e tlase (Tafole ea 2) li bontšitse ho se lumellane ho hoholo (>10°), ho hlalosang ho se be teng ha tsona ho li-scans tse tloaelehileng tsa θ-2θ. Ka hona, tlhahlobo ea lipalo e entsoe sampoleng e shebaneng le (995) ka lebaka la sebopeho sa eona se sa tloaelehang sa granular (mohlomong ho tsoa kholong ea columnar kapa twinning) le ho se tsitse ho tlase. Lipalo tsa lipalo tsa (111) (Setšoantšo sa 3) ho tsoa substrate ea Si le lera la 3C-SiC li ne li batla li tšoana, li tiisa kholo ea epitaxial ntle le twinning. Sebaka se bohareng se hlahile ho χ≈15°, se tsamaisana le sekhutlo sa khopolo-taba (111)-(995). Matheba a mararo a lekanang le symmetry a hlahile maemong a lebelletsoeng (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° le 33.6°), leha sebaka se fokolang se sa boleloang esale pele ho χ=62°/φ=93.3° se hloka lipatlisiso tse ling. Boleng ba kristale, bo lekotsweng ka bophara ba sebaka ho φ-scans, bo bonahala bo tšepisa, leha ho hlokahala litekanyo tsa curve tse sisinyehang bakeng sa ho lekanya. Lipalo tsa lipalo bakeng sa disampole tsa (510) le (553) li ntse li lokela ho phethoa ho netefatsa tlhaho ea tsona e nahanoang ea epitaxial.
Setšoantšo sa 3 se bonts'a setšoantšo sa tlhoro ea XRD se tlalehiloeng sampoleng e shebaneng le (995), e bonts'ang lifofane tsa (111) tsa substrate ea Si (a) le lera la 3C-SiC (b).
4. Qetello
Kgolo ya Heteroepitaxial 3C-SiC e atlehile ho boholo ba di-orientation tsa Si ntle le (110), tse hlahisitseng thepa ya polycrystalline. Di-substrate tsa Si(100)2° off le (995) di hlahisitse di-layer tse boreleli ka ho fetisisa (RMS <1 nm), ha (111), (211), le (553) di bontshitse ho inama ho hoholo (30-60 μm). Di-substrate tse nang le index e hodimo di hloka tlhahlobo e tswetseng pele ya XRD (mohlala, dipalo tsa di-pole) ho netefatsa epitaxy ka lebaka la ditlhoro tse sieo tsa θ-2θ. Mosebetsi o tswelang pele o kenyelletsa ditekanyo tsa rocking curve, tlhahlobo ya kgatello ya Raman, le katoloso ho di-orientation tse ding tse nang le index e hodimo ho phethela phuputso ena ya ho hlahloba.
Jwalo ka moetsi ya kopaneng ka ho otloloha, XKH e fana ka ditshebeletso tsa tshebetso tse ikgethileng tsa profeshenale tse nang le pokello e felletseng ya di-substrate tsa silicon carbide, e fanang ka mefuta e tloaelehileng le e ikgethang ho kenyeletswa 4H/6H-N, 4H-Semi, 4H/6H-P, le 3C-SiC, tse fumanehang ka bophara ho tloha ho 2-inch ho isa ho 12-inch. Bokgoni ba rona ba ho tloha pheletsong ho isa pheletsong kgolong ya kristale, ho sebetsa ka nepo, le netefatso ya boleng bo netefatsa ditharollo tse ikgethileng bakeng sa di-elektroniki tsa motlakase, RF, le ditshebediso tse hlahang.
Nako ea poso: Phato-08-2025