SiC wafer's abstract
Li-wafers tsa silicon carbide (SiC) li fetohile sebaka sa khetho bakeng sa lisebelisoa tsa elektronike tse matla, tse phahameng, le tse nang le mocheso o phahameng ho pholletsa le likoloi, matla a tsosolositsoeng le a sefofane. Potefolio ea rona e akaretsa li-polytypes tsa bohlokoa le merero ea doping-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), le mofuta oa p-4H / 6H (4H / 6H-P) - e fanoa ka lihlopha tse tharo tsa boleng: PRIME (e bentšitsoeng ka ho feletseng, lisebelisoa tse sa tsitsang tsa DUMMY) PATLISISO (mekhahlelo ea tloaelo ea epi le li-profaele tsa doping bakeng sa R&D). Bophahamo ba li-wafer bo bolelele ba 2 ″, 4 ″, 6 ″, 8 ″ le 12 ″ ho lumellana le lisebelisoa tsa khale le masela a tsoetseng pele. Re boetse re fana ka li-boules tsa monocrystalline le likristale tsa peo tse shebaneng hantle ho ts'ehetsa kholo ea kristale ka tlung.
Li-wafers tsa rona tsa 4H-N li na le li-carrier densities ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le tse hanyetsanang le 0.01–10 Ω·cm, li fana ka motsamao o motle oa elektronike le libaka tse senyehang ka holimo ho 2 MV/cm—li loketseng bakeng sa Schottky diode, le JMOSsFET diode. Li-substrates tsa HPSI li feta 1×10¹² Ω·cm tse hanyetsanang le li-micropipe tse ka tlase ho 0.1 cm⁻², tse netefatsang ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2 ″ le 4 ″, e nolofalletsa heteroepitaxy ho silicon mme e ts'ehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafers tsa mofuta oa P-4H/6H-P, tse entsoeng ka aluminium ho isa ho 1×10¹⁶–5×10¹⁸ cm⁻³, li thusa ka meralo ea lisebelisoa tse tlatselletsang.
Li-wafers tsa PRIME li na le polishing ea lik'hemik'hale ho ea ho <0.2 nm RMS holim'a mafika, phapang e feletseng ea botenya tlas'a 3 µm, le bow <10 µm. Li-substrates tsa DUMMY li potlakisa liteko tsa ho kopanya le ho paka, ha li-wafers tsa RESEARCH li na le botenya ba epi-layer ea 2–30 µm le doping ea bespoke. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase-Litekanyo tsa Hall, C-V profiling, le micropipe scanning-ho netefatsa hore JEDEC le SEMI lia lumellana.
Li-boules tse fihlang ho limilimithara tse 150 li lengoa ka PVT le CVD ka likhahla tse ka tlase ho 1×10³ cm⁻² le lipalo tse tlase tsa micropipe. Likristale tsa peo li khaoloa ka har'a 0.1 ° ea c-axis ho netefatsa kholo e ka ikatisang le chai e ngata ea ho seha.
Ka ho kopanya li-polytypes tse ngata, mefuta e fapaneng ea li-doping, limaraka tsa boleng, boholo ba li-wafer, le tlhahiso ea ka tlung ea boule le peo-crystal, sethala sa rona sa SiC substrate se tsamaisa liketane tsa phepelo le ho potlakisa nts'etsopele ea lisebelisoa bakeng sa likoloi tsa motlakase, li-grids tse bohlale, le lits'ebetso tse thata tsa tikoloho.
SiC wafer's abstract
Li-wafers tsa silicon carbide (SiC) li fetohile sebaka sa khetho bakeng sa lisebelisoa tsa elektronike tse matla, tse phahameng, le tse nang le mocheso o phahameng ho pholletsa le likoloi, matla a tsosolositsoeng le a sefofane. Potefolio ea rona e akaretsa li-polytypes tsa bohlokoa le merero ea doping-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), le mofuta oa p-4H / 6H (4H / 6H-P) - e fanoa ka lihlopha tse tharo tsa boleng: PRIME (e bentšitsoeng ka ho feletseng, lisebelisoa tse sa tsitsang tsa DUMMY) PATLISISO (mekhahlelo ea tloaelo ea epi le li-profaele tsa doping bakeng sa R&D). Bophahamo ba li-wafer bo bolelele ba 2 ″, 4 ″, 6 ″, 8 ″ le 12 ″ ho lumellana le lisebelisoa tsa khale le masela a tsoetseng pele. Re boetse re fana ka li-boules tsa monocrystalline le likristale tsa peo tse shebaneng hantle ho ts'ehetsa kholo ea kristale ka tlung.
Li-wafers tsa rona tsa 4H-N li na le li-carrier densities ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le tse hanyetsanang le 0.01–10 Ω·cm, li fana ka motsamao o motle oa elektronike le libaka tse senyehang ka holimo ho 2 MV/cm—li loketseng bakeng sa Schottky diode, le JMOSsFET diode. Li-substrates tsa HPSI li feta 1×10¹² Ω·cm tse hanyetsanang le li-micropipe tse ka tlase ho 0.1 cm⁻², tse netefatsang ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2 ″ le 4 ″, e nolofalletsa heteroepitaxy ho silicon mme e ts'ehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafers tsa mofuta oa P-4H/6H-P, tse entsoeng ka aluminium ho isa ho 1×10¹⁶–5×10¹⁸ cm⁻³, li thusa ka meralo ea lisebelisoa tse tlatselletsang.
Li-wafers tsa PRIME li na le polishing ea lik'hemik'hale ho ea ho <0.2 nm RMS holim'a mafika, phapang e feletseng ea botenya tlas'a 3 µm, le bow <10 µm. Li-substrates tsa DUMMY li potlakisa liteko tsa ho kopanya le ho paka, ha li-wafers tsa RESEARCH li na le botenya ba epi-layer ea 2–30 µm le doping ea bespoke. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase-Litekanyo tsa Hall, C-V profiling, le micropipe scanning-ho netefatsa hore JEDEC le SEMI lia lumellana.
Li-boules tse fihlang ho limilimithara tse 150 li lengoa ka PVT le CVD ka likhahla tse ka tlase ho 1×10³ cm⁻² le lipalo tse tlase tsa micropipe. Likristale tsa peo li khaoloa ka har'a 0.1 ° ea c-axis ho netefatsa kholo e ka ikatisang le chai e ngata ea ho seha.
Ka ho kopanya li-polytypes tse ngata, mefuta e fapaneng ea li-doping, limaraka tsa boleng, boholo ba li-wafer, le tlhahiso ea ka tlung ea boule le peo-crystal, sethala sa rona sa SiC substrate se tsamaisa liketane tsa phepelo le ho potlakisa nts'etsopele ea lisebelisoa bakeng sa likoloi tsa motlakase, li-grids tse bohlale, le lits'ebetso tse thata tsa tikoloho.
Setšoantšo sa SiC wafer
Leqephe la data la 6inch 4H-N mofuta oa SiC wafer
| Letlapa la data la 6inch SiC wafers | ||||
| Paramethara | Sub-Parameter | Mophato oa Z | P Kereiti | D Kereiti |
| Diameter | 149.5–150.0 limilimithara | 149.5–150.0 limilimithara | 149.5–150.0 limilimithara | |
| Botenya | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Botenya | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Wafer Orientation | Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI) | Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI) | Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI) | |
| Boima ba Micropipe | 4H‑N | ≤ 0.2 cm⁻² | ≤ 2 cm⁻² | ≤ 15 cm⁻² |
| Boima ba Micropipe | 4H‑SI | ≤ 1 cm⁻² | ≤ 5cm⁻² | ≤ 15 cm⁻² |
| Ho hanyetsa | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Ho hanyetsa | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Maemo a Motheo a Flat | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Bolelele ba Phatlalatso ba Pele | 4H‑N | 47.5 limilimithara ± 2.0 limilimithara | ||
| Bolelele ba Phatlalatso ba Pele | 4H‑SI | Notch | ||
| Kenyelletso ea Edge | 3 limilimithara | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Boqhobane | Sepolishe | Ra ≤ 1 nm | ||
| Boqhobane | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Mapheo a Edge | Ha ho letho | Bolelele bo akaretsang ≤ 20 mm, e le 'ngoe ≤ 2 mm | ||
| Lipoleiti tsa Hex | Sebaka sa pokello ≤ 0.05% | Sebaka sa pokello ≤ 0.1% | Kakaretso ≤ 1% | |
| Libaka tsa Polytype | Ha ho letho | Kakaretso ≤ 3% | Kakaretso ≤ 3% | |
| Li-Carbon Inclusions | Sebaka sa pokello ≤ 0.05% | Kakaretso ≤ 3% | ||
| Mekhoro ea Bokaholimo | Ha ho letho | Bolelele bo kopantseng ≤ 1 × bophara ba wafer | ||
| Li-Chips tsa Edge | Ha e lumelloe ≥ 0.2 mm bophara & botebo | Ho fihla ho li-chips tse 7, ≤ 1 mm ka 'ngoe | ||
| TSD (Threading Screw Dislocation) | ≤ 500 cm⁻² | N/A | ||
| BPD (Base Plane Dislocation) | ≤ 1000 cm⁻² | N/A | ||
| Tšilafalo ea Bokaholimo | Ha ho letho | |||
| Sephutheloana | Multi-wafer cassette kapa single wafer setshelo | Multi-wafer cassette kapa single wafer setshelo | Multi-wafer cassette kapa single wafer setshelo | |
Leqephe la data la 4inch 4H-N mofuta oa SiC wafer
| Letlapa la data la 4inch SiC wafer | |||
| Paramethara | Zero MPD Tlhahiso | Mophato o Tlwaelehileng wa Tlhahiso (P Grade) | Sehlopha sa Dummy (D Grade) |
| Diameter | 99.5 mm–100.0 limilimithara | ||
| Botenya (4H-N) | 350µm±15µm | 350µm±25µm | |
| Botenya (4H-Si) | 500µm±15µm | 500µm±25µm | |
| Wafer Orientation | Off axis: 4.0 ° ho ea <1120> ± 0.5 ° bakeng sa 4H-N; Ka lehlakoreng le leng: <0001> ± 0.5 ° bakeng sa 4H-Si | ||
| Boima ba Micropipe (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Boima ba Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Resistivity (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Resistivity (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Maemo a Motheo a Flat | [10-10] ±5.0° | ||
| Bolelele ba Phatlalatso ba Pele | 32.5 limilimithara ±2.0 limilimithara | ||
| Bolelele ba Bokhabane ba Bobeli | 18.0 limilimithara ±2.0 limilimithara | ||
| Boemo ba Bobeli ba Flat | Sefahleho sa silicon: 90 ° CW ho tloha sephara se seholo ± 5.0 ° | ||
| Kenyelletso ea Edge | 3 limilimithara | ||
| LTV/TTV/Bow Warp | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Boqhobane | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Edge Cracks By High Intensity Leseli | Ha ho letho | Ha ho letho | Bolelele ba kakaretso ≤10 mm; bolelele bo le bong ≤2 mm |
| Hex Plates By High Intensity Light | Kakaretso ≤0.05% | Kakaretso ≤0.05% | Kakaretso ≤0.1% |
| Libaka tsa Polytype Ka Leseli le Matla a Phahameng | Ha ho letho | Kakaretso ≤3% | |
| Likakaretso tsa Carbon tse bonoang | Kakaretso ≤0.05% | Kakaretso ≤3% | |
| Silicon Surface Scratches By High Intensity Light | Ha ho letho | Bolelele bo kopantseng ≤1 bophara ba wafer | |
| Edge Chips Ka Leseli le Matla a Phahameng | Ha ho e lumelletsoeng ≥0.2 mm bophara le botebo | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |
| Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng | Ha ho letho | ||
| Ho thijoa ha screw screw | ≤500 cm⁻² | N/A | |
| Sephutheloana | Multi-wafer cassette kapa single wafer setshelo | Multi-wafer cassette kapa single wafer setshelo | Multi-wafer cassette kapa single wafer setshelo |
Leqephe la data la 4inch HPSI mofuta oa SiC wafer
| Leqephe la data la 4inch HPSI mofuta oa SiC wafer | |||
| Paramethara | Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z) | Mophato o Tlwaelehileng wa Tlhahiso (P Grade) | Sehlopha sa Dummy (D Grade) |
| Diameter | 99.5–100.0 limilimithara | ||
| Botenya (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Wafer Orientation | Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° bakeng sa 4H-N; Ka lehlakoreng le leng: <0001> ± 0.5 ° bakeng sa 4H-Si | ||
| Boima ba Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Resistivity (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Maemo a Motheo a Flat | (10-10) ± 5.0 ° | ||
| Bolelele ba Phatlalatso ba Pele | 32.5 limilimithara ±2.0 limilimithara | ||
| Bolelele ba Bokhabane ba Bobeli | 18.0 limilimithara ±2.0 limilimithara | ||
| Boemo ba Bobeli ba Flat | Sefahleho sa silicon: 90 ° CW ho tloha sephara se seholo ± 5.0 ° | ||
| Kenyelletso ea Edge | 3 limilimithara | ||
| LTV/TTV/Bow Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Ho thatafala (C sefahleho) | Sepolishe | Ra ≤1 nm | |
| Bokhopo (Si face) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Edge Cracks By High Intensity Leseli | Ha ho letho | Bolelele ba kakaretso ≤10 mm; bolelele bo le bong ≤2 mm | |
| Hex Plates By High Intensity Light | Kakaretso ≤0.05% | Kakaretso ≤0.05% | Kakaretso ≤0.1% |
| Libaka tsa Polytype Ka Leseli le Matla a Phahameng | Ha ho letho | Kakaretso ≤3% | |
| Likakaretso tsa Carbon tse bonoang | Kakaretso ≤0.05% | Kakaretso ≤3% | |
| Silicon Surface Scratches By High Intensity Light | Ha ho letho | Bolelele bo kopantseng ≤1 bophara ba wafer | |
| Edge Chips Ka Leseli le Matla a Phahameng | Ha ho e lumelletsoeng ≥0.2 mm bophara le botebo | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |
| Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng | Ha ho letho | Ha ho letho | |
| Ho kheloha ha Screw Dislocation | ≤500 cm⁻² | N/A | |
| Sephutheloana | Multi-wafer cassette kapa single wafer setshelo | ||
Nako ea poso: Jun-30-2025