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Tataiso e Felletseng ea Li-wafer tsa Silicon Carbide/SiC

Kakaretso ea SiC wafer

 Li-wafer tsa silicon carbide (SiC)e se e le sebaka seo ho kgethwang ho sona bakeng sa di-elektroniki tse nang le matla a hodimo, maqhubu a hodimo, le mocheso o hodimo ho pholletsa le makala a dikoloi, matla a ntjhafatswang, le a difofane. Potefolio ya rona e akaretsa mefuta ya bohlokwa ya di-polytype le merero ya doping—4H e nang le naetrojene (4H-N), semi-insulating e phahameng (HPSI), 3C e nang le naetrojene (3C-N), le mofuta wa p 4H/6H (4H/6H-P)—e fanwang ka dihlopha tse tharo tsa boleng: PRIME (di-substrate tse betlilweng ka botlalo, tsa sehlopha sa disebediswa), DUMMY (e lapilweng kapa e sa polishwang bakeng sa diteko tsa tshebetso), le RESEARCH (di-layers tsa epi tse ikgethileng le diprofaele tsa doping bakeng sa R&D). Bophara ba wafer bo akaretsa 2″, 4″, 6″, 8″, le 12″ ho dumellana le disebediswa tsa kgale le tse tswetseng pele. Re boetse re fana ka di-boule tse nang le dikristale tse tshetlehileng hantle le dikristale tsa peo tse shebaneng hantle ho tshehetsa kgolo ya kristale ya ka tlung.

Li-wafer tsa rona tsa 4H-N li na le bongata ba carrier ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le matla a ho hanyetsa a 0.01–10 Ω·cm, li fana ka motsamao o motle oa lielektrone le masimo a ho senyeha a kaholimo ho 2 MV/cm — li ​​loketse li-diode tsa Schottky, li-MOSFET, le li-JFET. Li-substrate tsa HPSI li feta matla a ho hanyetsa a 1×10¹² Ω·cm ka bongata ba li-micropipe tse ka tlase ho 0.1 cm⁻², ho netefatsa ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2″ le 4″, e nolofalletsa heteroepitaxy ho silicon mme e tšehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafer tsa mofuta oa P-type 4H/6H-P, tse nang le aluminium ho 1×10¹⁶–5×10¹⁸ cm⁻³, li nolofalletsa meralo ea lisebelisoa tse tlatsetsang.

Li-wafer tsa SiC, PRIME li feta ho polishing ea lik'hemik'hale-mechanical ho fihlela ho <0.2 nm RMS roughness surface, phapang ea botenya ka kakaretso tlas'a 3 µm, le bow <10 µm. Li-substrate tsa DUMMY li potlakisa liteko tsa kopano le liphutheloana, ha li-wafer tsa RESEARCH li na le botenya ba epi-layer ba 2-30 µm le doping e entsoeng ka mokhoa o ikhethileng. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase—litekanyo tsa Hall, C-V profiling, le micropipe scanning—ho netefatsa hore JEDEC le SEMI lia latela.

Li-boule tse fihlang ho 150 mm bophara li lengoa ka PVT le CVD ka bongata ba dislocation bo ka tlase ho 1×10³ cm⁻² le palo e tlase ea micropipe. Likristale tsa peo li khaoloa ka hare ho 0.1° ea c-axis ho netefatsa kholo e ka ikatisang hape le chai e ngata ea ho seha.

Ka ho kopanya mefuta e mengata ya di-polytype, mefuta e fapaneng ya doping, dikereiti tsa boleng, boholo ba wafer ya SiC, le tlhahiso ya ka hare ya boule le peo-kristale, sethala sa rona sa substrate sa SiC se nolofatsa diketane tsa phepelo mme se potlakisa ntshetsopele ya disebediswa bakeng sa dikoloi tsa motlakase, di-grid tse bohlale, le ditshebediso tse thata tsa tikoloho.

Kakaretso ea SiC wafer

 Li-wafer tsa silicon carbide (SiC)e se e le karolo ea khetho ea SiC bakeng sa lisebelisoa tsa elektroniki tse nang le matla a phahameng, maqhubu a phahameng le mocheso o phahameng ho pholletsa le makala a likoloi, matla a nchafatsoang le a lifofane. Potefolio ea rona e akaretsa mefuta ea bohlokoa ea polytypes le merero ea doping—4H e nang le naetrojene (4H-N), semi-insulating e phahameng (HPSI), 3C e nang le naetrojene (3C-N), le mofuta oa p 4H/6H (4H/6H-P)—e fanoang ka mekhahlelo e meraro ea boleng: SiC waferPRIME (li-substrate tse bentšitsoeng ka botlalo, tsa sehlopha sa lisebelisoa), DUMMY (e kobehileng kapa e sa polishetsoang bakeng sa liteko tsa ts'ebetso), le RESEARCH (li-layers tsa epi tse ikhethileng le liprofaele tsa doping bakeng sa R&D). Bophara ba SiC Wafer bo bolelele ba 2″, 4″, 6″, 8″, le 12″ ho lumellana le lisebelisoa tsa khale le lintho tse tsoetseng pele. Re boetse re fana ka li-boule tse nang le monocrystalline le likristale tsa peo tse shebaneng hantle ho tšehetsa kholo ea kristale ea ka tlung.

Li-wafer tsa rona tsa 4H-N SiC li na le bongata ba carrier ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le matla a ho hanyetsa a 0.01–10 Ω·cm, li fana ka motsamao o motle oa lielektrone le masimo a ho senyeha a kaholimo ho 2 MV/cm — li ​​loketse li-diode tsa Schottky, li-MOSFET, le li-JFET. Li-substrate tsa HPSI li feta matla a ho hanyetsa a 1×10¹² Ω·cm ka bongata ba li-micropipe tse ka tlase ho 0.1 cm⁻², ho netefatsa ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2″ le 4″, e nolofalletsa heteroepitaxy ho silicon mme e tšehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafer tsa SiC wafer tsa mofuta oa P-4H/6H-P, tse nang le aluminium ho 1×10¹⁶–5×10¹⁸ cm⁻³, li nolofatsa meralo ea lisebelisoa tse tlatsetsang.

Li-wafer tsa SiC wafer tsa PRIME li feta ho polishing ea lik'hemik'hale-mechanical ho fihlela ho <0.2 nm RMS roughness ea bokaholimo, phapang ea botenya ka kakaretso tlas'a 3 µm, le bow <10 µm. Li-substrate tsa DUMMY li potlakisa liteko tsa kopano le liphutheloana, ha li-wafer tsa RESEARCH li na le botenya ba epi-layer ba 2-30 µm le doping e entsoeng ka mokhoa o ikhethileng. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase—litekanyo tsa Hall, C-V profiling, le micropipe scanning—ho netefatsa hore JEDEC le SEMI lia latela.

Li-boule tse fihlang ho 150 mm bophara li lengoa ka PVT le CVD ka bongata ba dislocation bo ka tlase ho 1×10³ cm⁻² le palo e tlase ea micropipe. Likristale tsa peo li khaoloa ka hare ho 0.1° ea c-axis ho netefatsa kholo e ka ikatisang hape le chai e ngata ea ho seha.

Ka ho kopanya mefuta e mengata ya di-polytype, mefuta e fapaneng ya doping, dikereiti tsa boleng, boholo ba wafer ya SiC, le tlhahiso ya ka hare ya boule le peo-kristale, sethala sa rona sa substrate sa SiC se nolofatsa diketane tsa phepelo mme se potlakisa ntshetsopele ya disebediswa bakeng sa dikoloi tsa motlakase, di-grid tse bohlale, le ditshebediso tse thata tsa tikoloho.

Setšoantšo sa SiC wafer

Leqephe la data la SiC wafer ea mofuta oa 6inch 4H-N

 

Leqephe la data la li-wafer tsa SiC tsa lisenthimithara tse 6
Paramethara Paramethara e Nyane Sehlopha sa Z Kereiti ea P Sehlopha sa D
Bophara   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Botenya 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Botenya 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Boikutlo ba Wafer   Mothapo o sa sebetseng: 4.0° ho ya ho <11-20> ±0.5° (4H-N); Mothapo o sa sebetseng: <0001> ±0.5° (4H-SI) Mothapo o sa sebetseng: 4.0° ho ya ho <11-20> ±0.5° (4H-N); Mothapo o sa sebetseng: <0001> ±0.5° (4H-SI) Mothapo o sa sebetseng: 4.0° ho ya ho <11-20> ±0.5° (4H-N); Mothapo o sa sebetseng: <0001> ±0.5° (4H-SI)
Botebo ba Micropipe 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Botebo ba Micropipe 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ho hanyetsa 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ho hanyetsa 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Boikutlo ba Motheo bo bataletseng   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Bolelele ba Sephara ba Motheo 4H‑N 47.5 mm ± 2.0 mm    
Bolelele ba Sephara ba Motheo 4H‑SI Notch    
Ho se kenyeletsoe ha Moeli     3 mm  
Koba/LTV/TTV/Seqha   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Ho ba le makukuno Sepolishe Ra ≤ 1 nm    
Ho ba le makukuno CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Mapetso a Moeli   Ha ho letho   Bolelele bo bokellaneng ≤ 20 mm, e le 'ngoe ≤ 2 mm
Lipoleiti tsa Hex   Sebaka se bokellaneng ≤ 0.05% Sebaka se bokellaneng ≤ 0.1% Sebaka se bokellaneng ≤ 1%
Libaka tsa Mefuta e Mengata   Ha ho letho Sebaka se bokellaneng ≤ 3% Sebaka se bokellaneng ≤ 3%
Ho kenyeletsoa ha khabone   Sebaka se bokellaneng ≤ 0.05%   Sebaka se bokellaneng ≤ 3%
Mengoapo ea Bokaholimo   Ha ho letho   Bolelele bo bokellaneng ≤ 1 × bophara ba wafer
Li-chips tsa Edge   Ha ho letho le dumelletsweng bophara le botebo ba ≥ 0.2 mm   Ho fihlela ho di-chips tse 7, ≤ 1 mm ka 'ngoe
TSD (Ho Senya Sekurufu sa Khoele)   ≤ 500 cm⁻²   Ha e eo
BPD (Ho Furalla ha Sefofane sa Motheo)   ≤ 1000 cm⁻²   Ha e eo
Tšilafalo ea Bokaholimo   Ha ho letho    
Sephutheloana   Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer

Leqephe la data la SiC wafer ea mofuta oa 4inch 4H-N

 

Leqephe la data la wafer ea 4inch SiC
Paramethara Tlhahiso ea MPD ha e eo Kereiti e Tloaelehileng ea Tlhahiso (Kereiti ea P) Kereiti ea Dummy (Kereiti ea D)
Bophara 99.5 mm–100.0 mm
Botenya (4H-N) 350 µm±15 µm   350 µm±25 µm
Botenya (4H-Si) 500 µm±15 µm   500 µm±25 µm
Boikutlo ba Wafer Mothapo o sa sebetseng: 4.0° ho ya ho <1120> ±0.5° bakeng sa 4H-N; Mothapo o sa sebetseng: <0001> ±0.5° bakeng sa 4H-Si    
Botenya ba Micropipe (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Boima ba Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ho hanyetsa (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ho hanyetsa (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Boikutlo ba Motheo bo bataletseng   [10-10] ±5.0°  
Bolelele ba Sephara ba Motheo   32.5 mm ±2.0 mm  
Bolelele ba Bobedi bo Sephara   18.0 mm ±2.0 mm  
Boikutlo bo Bobedi bo bataletseng   Silicon e shebile holimo: 90° CW ho tloha holimo ho tloha holimo ±5.0°  
Ho se kenyeletsoe ha Moeli   3 mm  
LTV/TTV/Seqha se kobehileng ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ho ba le makukuno Ra ea Poland ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Ha ho letho Ha ho letho Bolelele bo bokellaneng ≤10 mm; bolelele bo le bong ≤2 mm
Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.1%
Libaka tsa Polytype ka Leseli le Matla a Phahameng Ha ho letho   Sebaka se bokellaneng ≤3%
Ho kenyeletsoa ha Khabone e Bonahalang Sebaka se bokellaneng ≤0.05%   Sebaka se bokellaneng ≤3%
Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho   Bolelele bo bokellaneng ≤1 bophara ba wafer
Li-chips tsa Edge ka Leseli le Phahameng la Matla Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2 mm   5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho    
Ho qhaqha ha sekere sa khoele ≤500 cm⁻² Ha e eo  
Sephutheloana Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer

Leqephe la data la wafer ea mofuta oa HPSI oa 4inch SiC

 

Leqephe la data la wafer ea mofuta oa HPSI oa 4inch SiC
Paramethara Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) Kereiti e Tloaelehileng ea Tlhahiso (Kereiti ea P) Kereiti ea Dummy (Kereiti ea D)
Bophara   99.5–100.0 mm  
Botenya (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Boikutlo ba Wafer Mothapo o sa sebetseng: 4.0° ho ya ho <11-20> ±0.5° bakeng sa 4H-N; Mothapo o sa sebetseng: <0001> ±0.5° bakeng sa 4H-Si
Boima ba Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ho hanyetsa (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Boikutlo ba Motheo bo bataletseng (10-10) ±5.0°
Bolelele ba Sephara ba Motheo 32.5 mm ±2.0 mm
Bolelele ba Bobedi bo Sephara 18.0 mm ±2.0 mm
Boikutlo bo Bobedi bo bataletseng Silicon e shebile holimo: 90° CW ho tloha holimo ho tloha holimo ±5.0°
Ho se kenyeletsoe ha Moeli   3 mm  
LTV/TTV/Seqha se kobehileng ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ho hlaba (sefahleho sa C) Sepolishe Ra ≤1 nm  
Ho se tsitse (Sefahleho sa Si) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Ha ho letho   Bolelele bo bokellaneng ≤10 mm; bolelele bo le bong ≤2 mm
Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.1%
Libaka tsa Polytype ka Leseli le Matla a Phahameng Ha ho letho   Sebaka se bokellaneng ≤3%
Ho kenyeletsoa ha Khabone e Bonahalang Sebaka se bokellaneng ≤0.05%   Sebaka se bokellaneng ≤3%
Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho   Bolelele bo bokellaneng ≤1 bophara ba wafer
Li-chips tsa Edge ka Leseli le Phahameng la Matla Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2 mm   5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho   Ha ho letho
Ho Sefahla Sekere sa Khoele ≤500 cm⁻² Ha e eo  
Sephutheloana   Khasete ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer  

Tšebeliso ea SiC wafer

 

  • Li-module tsa Matla a SiC Wafer bakeng sa Li-Inverter tsa EV
    Li-MOSFET le di-diode tse thehiloeng ho SiC wafer tse hahiloeng holim'a li-substrate tsa SiC wafer tsa boleng bo holimo li fana ka tahlehelo ea ho fetola e tlase haholo. Ka ho sebelisa theknoloji ea SiC wafer, li-module tsena tsa motlakase li sebetsa ka li-voltage le mocheso o phahameng, li nolofalletsa li-inverter tse sebetsang hantle haholoanyane tsa ho hula. Ho kopanya li-die tsa SiC wafer mekhahlelong ea motlakase ho fokotsa litlhoko tsa ho pholisa le sebaka sa ho sisinyeha, ho bontša bokhoni bo felletseng ba boqapi ba SiC wafer.

  • Lisebelisoa tsa RF le 5G tse nang le maqhubu a phahameng ho SiC Wafer
    Li-amplifiers tsa RF le liswichi tse entsoeng liforomong tsa wafer tsa SiC tse thibelang mocheso li bontša ho khanna ha mocheso le motlakase o phahameng oa ho senyeha. Substrate ea wafer ea SiC e fokotsa tahlehelo ea dielectric maqhubung a GHz, ha matla a thepa a wafer ea SiC a lumella ts'ebetso e tsitsitseng tlas'a maemo a matla a phahameng, a mocheso o phahameng—e leng se etsang hore wafer ea SiC e be substrate e khethiloeng bakeng sa liteishene tsa motheo tsa moloko o latelang oa 5G le litsamaiso tsa radar.

  • Lisebelisoa tsa Optoelectronic le LED tse tsoang ho SiC Wafer
    Li-LED tse putsoa le tsa UV tse lengoang holim'a li-substrate tsa SiC wafer li rua molemo ka ho bapisa lerako le ho qhala mocheso hantle. Ho sebelisa wafer ea SiC e bentšitsoeng ka C-face ho netefatsa hore ho na le likarolo tse tšoanang tsa epitaxial, ha ho ba thata ha SiC wafer ho nolofalletsa ho tšesaane ha wafer le ho paka sesebelisoa ka mokhoa o tšepahalang. Sena se etsa hore wafer ea SiC e be sethala se sebelisoang haholo bakeng sa lits'ebetso tsa LED tse matla haholo, tse phelang nako e telele.

Lipotso le Likarabo tsa SiC wafer

1. P: Li-wafer tsa SiC li etsoa joang?


A:

Li-wafer tsa SiC tse entsoengMehato e qaqileng

  1. Li-wafer tsa SiCTokisetso ea Lisebelisoa tse Tala

    • Sebelisa phofo ea SiC ea sehlopha sa ≥5N (litšila ≤1 ppm).
    • Sefa 'me u bake esale pele ho tlosa metsoako e setseng ea khabone kapa naetrojene.

  1. SiCTokisetso ea Kristale ea Peo

    • Nka sekhechana sa kristale e le 'ngoe ea 4H-SiC, se seha ka tsela ea 〈0001〉 ho ea ho ~10 × 10 mm².

    • Polish e nepahetseng ho isa ho Ra ≤0.1 nm mme o tshwaye tsela eo kristale e shebaneng ka yona.

  2. SiCKgolo ea PVT (Lipalangoang tsa Mouoane oa 'Mele)

    • Tlatsa graphite crucible: tlase ka phofo ea SiC, holimo ka kristale ea peo.

    • Tlohela ho 10⁻³–10⁻⁵ Torr kapa u tlatse ka helium e hloekileng haholo ho 1 atm.

    • Futhumatsa sebaka sa mohloli ho fihlela ho 2100–2300 ℃, boloka sebaka sa peo se le 100–150 ℃ se pholile.

    • Laola sekgahla sa kgolo ho 1–5 mm/h ho leka-lekanya boleng le tlhahiso.

  3. SiCIngot Annealing

    • Kenya ingot ea SiC e holisitsoeng ho 1600–1800 ℃ ka lihora tse 4-8.

    • Morero: ho imolla khatello ea mocheso le ho fokotsa bongata ba ho falla ha lintho.

  4. SiCHo seha ka Wafer

    • Sebelisa sakha ea terata ea taemane ho seha ingot hore e be li-wafer tse teteaneng tsa 0.5–1 mm.

    • Fokotsa ho thothomela le matla a lehlakoreng ho qoba mapetso a manyane.

  5. SiCWaferHo Sila le ho Pholisetsa

    • Ho sila ho hoholoho tlosa tshenyo ya ho saga (ho ba thata ~10–30 µm).

    • Ho sila hantleho fihlela ho ba bataletse ≤5 µm.

    • Ho Sebedisa ka Dikhemikhale le Mechini (CMP)ho fihlela pheletso e kang seipone (Ra ≤0.2 nm).

  6. SiCWaferHo Hloekisa le ho Hlahloba

    • Ho hlwekisa ka ultrasoundka tharollo ea Piranha (H₂SO₄:H₂O₂), metsi a DI, ebe IPA.

    • XRD/Raman spectroscopyho netefatsa mofuta wa polytype (4H, 6H, 3C).

    • Interferometryho lekanya ho batalla (<5 µm) le ho kobeha (<20 µm).

    • Seteishene sa lintlha tse 'neho leka ho hanyetsa (mohlala, HPSI ≥10⁹ Ω·cm).

    • Tlhahlobo e phethahetseng ea liphosotlas'a microscope ea leseli le nang le polarized le scratch tester.

  7. SiCWaferTlhophiso le Tlhophiso

    • Hlopha di-wafer ka mofuta wa polytype le mofuta wa motlakase:

      • Mofuta oa 4H-SiC N (4H-N): mahloriso a mojari 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC High Purity Semi-Insulation (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • Mofuta oa 6H-SiC N (6H-N)

      • Tse ling: 3C-SiC, P-type, jj.

  8. SiCWaferSephutheloana le Thomello

    • Beha ka mabokoseng a hloekileng, a se nang lerole a wafer.

    • Tšoaea lebokose ka leng ka bophara, botenya, mofuta oa polytype, sehlopha sa resistivity, le nomoro ea sehlopha.

      Li-wafer tsa SiC

2. P: Melemo ea bohlokoa ea li-wafer tsa SiC ke efe ho feta li-wafer tsa silicon?


A: Ha li bapisoa le li-wafer tsa silicon, li-wafer tsa SiC li nolofalletsa:

  • Ts'ebetso e phahameng ea motlakase(>1,200 V) ka khanyetso e tlase.

  • Ho tsitsa ha mocheso ho phahameng(>300 °C) le taolo e ntlafetseng ya mocheso.

  • Lebelo le potlakileng la ho chenchaka tahlehelo e tlase ea ho fetola, ho fokotsa pholiso ea boemo ba sistimi le boholo ba li-converter tsa motlakase.

4. P: Ke diphoso dife tse tlwaelehileng tse amang tlhahiso le tshebetso ya SiC wafer?


K: Mefokolo e ka sehloohong ho di-wafer tsa SiC e kenyeletsa di-micropipe, dislocations tsa basal plane (BPDs), le ho ngoatheha ha bokaholimo. Di-micropipe di ka baka ho hloleha ha sesebediswa ka tsela e kotsi; di-BPD di eketsa ho hanyetsa ha nako e ntse e ya; mme ho ngoatheha ha bokaholimo ho lebisa ho robeheng ha di-wafer kapa kgolo e mpe ya epitaxial. Ka hona, tlhahlobo e matla le phokotso ya diphoso di bohlokwa ho eketsa chai ya di-wafer tsa SiC.

Nako ea poso: Phuptjane-30-2025
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