Silicon Carbide Wafers: Tataiso e Feletseng ea Thepa, Boqapi, le Likopo

SiC wafer's abstract

Li-wafers tsa silicon carbide (SiC) li fetohile sebaka sa khetho bakeng sa lisebelisoa tsa elektronike tse matla, tse phahameng, le tse nang le mocheso o phahameng ho pholletsa le likoloi, matla a tsosolositsoeng le a sefofane. Potefolio ea rona e akaretsa li-polytypes tsa bohlokoa le merero ea doping-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), le mofuta oa p-4H / 6H (4H / 6H-P) - e fanoa ka lihlopha tse tharo tsa boleng: PRIME (e bentšitsoeng ka ho feletseng, lisebelisoa tse sa tsitsang tsa DUMMY) PATLISISO (mekhahlelo ea tloaelo ea epi le li-profaele tsa doping bakeng sa R&D). Bophahamo ba li-wafer bo bolelele ba 2 ″, 4 ″, 6 ″, 8 ″ le 12 ″ ho lumellana le lisebelisoa tsa khale le masela a tsoetseng pele. Re boetse re fana ka li-boules tsa monocrystalline le likristale tsa peo tse shebaneng hantle ho ts'ehetsa kholo ea kristale ka tlung.

Li-wafers tsa rona tsa 4H-N li na le li-carrier densities ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le tse hanyetsanang le 0.01–10 Ω·cm, li fana ka motsamao o motle oa elektronike le libaka tse senyehang ka holimo ho 2 MV/cm—li loketseng bakeng sa Schottky diode, le JMOSsFET diode. Li-substrates tsa HPSI li feta 1×10¹² Ω·cm tse hanyetsanang le li-micropipe tse ka tlase ho 0.1 cm⁻², tse netefatsang ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2 ″ le 4 ″, e nolofalletsa heteroepitaxy ho silicon mme e ts'ehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafers tsa mofuta oa P-4H/6H-P, tse entsoeng ka aluminium ho isa ho 1×10¹⁶–5×10¹⁸ cm⁻³, li thusa ka meralo ea lisebelisoa tse tlatselletsang.

Li-wafers tsa PRIME li na le polishing ea lik'hemik'hale ho ea ho <0.2 nm RMS holim'a mafika, phapang e feletseng ea botenya tlas'a 3 µm, le bow <10 µm. Li-substrates tsa DUMMY li potlakisa liteko tsa ho kopanya le ho paka, ha li-wafers tsa RESEARCH li na le botenya ba epi-layer ea 2–30 µm le doping ea bespoke. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase-Litekanyo tsa Hall, C-V profiling, le micropipe scanning-ho netefatsa hore JEDEC le SEMI lia lumellana.

Li-boules tse fihlang ho limilimithara tse 150 li lengoa ka PVT le CVD ka likhahla tse ka tlase ho 1×10³ cm⁻² le lipalo tse tlase tsa micropipe. Likristale tsa peo li khaoloa ka har'a 0.1 ° ea c-axis ho netefatsa kholo e ka ikatisang le chai e ngata ea ho seha.

Ka ho kopanya li-polytypes tse ngata, mefuta e fapaneng ea li-doping, limaraka tsa boleng, boholo ba li-wafer, le tlhahiso ea ka tlung ea boule le peo-crystal, sethala sa rona sa SiC substrate se tsamaisa liketane tsa phepelo le ho potlakisa nts'etsopele ea lisebelisoa bakeng sa likoloi tsa motlakase, li-grids tse bohlale, le lits'ebetso tse thata tsa tikoloho.

SiC wafer's abstract

Li-wafers tsa silicon carbide (SiC) li fetohile sebaka sa khetho bakeng sa lisebelisoa tsa elektronike tse matla, tse phahameng, le tse nang le mocheso o phahameng ho pholletsa le likoloi, matla a tsosolositsoeng le a sefofane. Potefolio ea rona e akaretsa li-polytypes tsa bohlokoa le merero ea doping-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), le mofuta oa p-4H / 6H (4H / 6H-P) - e fanoa ka lihlopha tse tharo tsa boleng: PRIME (e bentšitsoeng ka ho feletseng, lisebelisoa tse sa tsitsang tsa DUMMY) PATLISISO (mekhahlelo ea tloaelo ea epi le li-profaele tsa doping bakeng sa R&D). Bophahamo ba li-wafer bo bolelele ba 2 ″, 4 ″, 6 ″, 8 ″ le 12 ″ ho lumellana le lisebelisoa tsa khale le masela a tsoetseng pele. Re boetse re fana ka li-boules tsa monocrystalline le likristale tsa peo tse shebaneng hantle ho ts'ehetsa kholo ea kristale ka tlung.

Li-wafers tsa rona tsa 4H-N li na le li-carrier densities ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le tse hanyetsanang le 0.01–10 Ω·cm, li fana ka motsamao o motle oa elektronike le libaka tse senyehang ka holimo ho 2 MV/cm—li loketseng bakeng sa Schottky diode, le JMOSsFET diode. Li-substrates tsa HPSI li feta 1×10¹² Ω·cm tse hanyetsanang le li-micropipe tse ka tlase ho 0.1 cm⁻², tse netefatsang ho lutla ho fokolang bakeng sa lisebelisoa tsa RF le microwave. Cubic 3C-N, e fumanehang ka liforomo tsa 2 ″ le 4 ″, e nolofalletsa heteroepitaxy ho silicon mme e ts'ehetsa lits'ebetso tse ncha tsa photonic le MEMS. Li-wafers tsa mofuta oa P-4H/6H-P, tse entsoeng ka aluminium ho isa ho 1×10¹⁶–5×10¹⁸ cm⁻³, li thusa ka meralo ea lisebelisoa tse tlatselletsang.

Li-wafers tsa PRIME li na le polishing ea lik'hemik'hale ho ea ho <0.2 nm RMS holim'a mafika, phapang e feletseng ea botenya tlas'a 3 µm, le bow <10 µm. Li-substrates tsa DUMMY li potlakisa liteko tsa ho kopanya le ho paka, ha li-wafers tsa RESEARCH li na le botenya ba epi-layer ea 2–30 µm le doping ea bespoke. Lihlahisoa tsohle li netefalitsoe ke X-ray diffraction (rocking curve <30 arcsec) le Raman spectroscopy, ka liteko tsa motlakase-Litekanyo tsa Hall, C-V profiling, le micropipe scanning-ho netefatsa hore JEDEC le SEMI lia lumellana.

Li-boules tse fihlang ho limilimithara tse 150 li lengoa ka PVT le CVD ka likhahla tse ka tlase ho 1×10³ cm⁻² le lipalo tse tlase tsa micropipe. Likristale tsa peo li khaoloa ka har'a 0.1 ° ea c-axis ho netefatsa kholo e ka ikatisang le chai e ngata ea ho seha.

Ka ho kopanya li-polytypes tse ngata, mefuta e fapaneng ea li-doping, limaraka tsa boleng, boholo ba li-wafer, le tlhahiso ea ka tlung ea boule le peo-crystal, sethala sa rona sa SiC substrate se tsamaisa liketane tsa phepelo le ho potlakisa nts'etsopele ea lisebelisoa bakeng sa likoloi tsa motlakase, li-grids tse bohlale, le lits'ebetso tse thata tsa tikoloho.

Setšoantšo sa SiC wafer

Sesebelisoa sa SiC 00101
SiC Semi-Insulating04
Sephaphatha sa SiC
SiC Ingot14

Leqephe la data la 6inch 4H-N mofuta oa SiC wafer

 

Letlapa la data la 6inch SiC wafers
Paramethara Sub-Parameter Mophato oa Z P Kereiti D Kereiti
Diameter 149.5–150.0 limilimithara 149.5–150.0 limilimithara 149.5–150.0 limilimithara
Botenya 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Botenya 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Wafer Orientation Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI) Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI) Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° (4H-N); Ka lehlakoreng le leng: <0001> ±0.5° (4H-SI)
Boima ba Micropipe 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Boima ba Micropipe 4H‑SI ≤ 1 cm⁻² ≤ 5cm⁻² ≤ 15 cm⁻²
Ho hanyetsa 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ho hanyetsa 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm
Maemo a Motheo a Flat [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Bolelele ba Phatlalatso ba Pele 4H‑N 47.5 limilimithara ± 2.0 limilimithara
Bolelele ba Phatlalatso ba Pele 4H‑SI Notch
Kenyelletso ea Edge 3 limilimithara
Warp/LTV/TTV/Bow ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm
Boqhobane Sepolishe Ra ≤ 1 nm
Boqhobane CMP Ra ≤ 0.2 nm Ra ≤ 0.5 nm
Mapheo a Edge Ha ho letho Bolelele bo akaretsang ≤ 20 mm, e le 'ngoe ≤ 2 mm
Lipoleiti tsa Hex Sebaka sa pokello ≤ 0.05% Sebaka sa pokello ≤ 0.1% Kakaretso ≤ 1%
Libaka tsa Polytype Ha ho letho Kakaretso ≤ 3% Kakaretso ≤ 3%
Li-Carbon Inclusions Sebaka sa pokello ≤ 0.05% Kakaretso ≤ 3%
Mekhoro ea Bokaholimo Ha ho letho Bolelele bo kopantseng ≤ 1 × bophara ba wafer
Li-Chips tsa Edge Ha e lumelloe ≥ 0.2 mm bophara & botebo Ho fihla ho li-chips tse 7, ≤ 1 mm ka 'ngoe
TSD (Threading Screw Dislocation) ≤ 500 cm⁻² N/A
BPD (Base Plane Dislocation) ≤ 1000 cm⁻² N/A
Tšilafalo ea Bokaholimo Ha ho letho
Sephutheloana Multi-wafer cassette kapa single wafer setshelo Multi-wafer cassette kapa single wafer setshelo Multi-wafer cassette kapa single wafer setshelo

Leqephe la data la 4inch 4H-N mofuta oa SiC wafer

 

Letlapa la data la 4inch SiC wafer
Paramethara Zero MPD Tlhahiso Mophato o Tlwaelehileng wa Tlhahiso (P Grade) Sehlopha sa Dummy (D Grade)
Diameter 99.5 mm–100.0 limilimithara
Botenya (4H-N) 350µm±15µm 350µm±25µm
Botenya (4H-Si) 500µm±15µm 500µm±25µm
Wafer Orientation Off axis: 4.0 ° ho ea <1120> ± 0.5 ° bakeng sa 4H-N; Ka lehlakoreng le leng: <0001> ± 0.5 ° bakeng sa 4H-Si
Boima ba Micropipe (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Boima ba Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Resistivity (4H-N) 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Resistivity (4H-Si) ≥1E10 Ω·cm ≥1E5 Ω·cm
Maemo a Motheo a Flat [10-10] ±5.0°
Bolelele ba Phatlalatso ba Pele 32.5 limilimithara ±2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli 18.0 limilimithara ±2.0 limilimithara
Boemo ba Bobeli ba Flat Sefahleho sa silicon: 90 ° CW ho tloha sephara se seholo ± 5.0 °
Kenyelletso ea Edge 3 limilimithara
LTV/TTV/Bow Warp ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Boqhobane Polish Ra ≤1 nm; CMP Ra ≤0.2 nm Ra ≤0.5 nm
Edge Cracks By High Intensity Leseli Ha ho letho Ha ho letho Bolelele ba kakaretso ≤10 mm; bolelele bo le bong ≤2 mm
Hex Plates By High Intensity Light Kakaretso ≤0.05% Kakaretso ≤0.05% Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng Ha ho letho Kakaretso ≤3%
Likakaretso tsa Carbon tse bonoang Kakaretso ≤0.05% Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light Ha ho letho Bolelele bo kopantseng ≤1 bophara ba wafer
Edge Chips Ka Leseli le Matla a Phahameng Ha ho e lumelletsoeng ≥0.2 mm bophara le botebo 5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng Ha ho letho
Ho thijoa ha screw screw ≤500 cm⁻² N/A
Sephutheloana Multi-wafer cassette kapa single wafer setshelo Multi-wafer cassette kapa single wafer setshelo Multi-wafer cassette kapa single wafer setshelo

Leqephe la data la 4inch HPSI mofuta oa SiC wafer

 

Leqephe la data la 4inch HPSI mofuta oa SiC wafer
Paramethara Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z) Mophato o Tlwaelehileng wa Tlhahiso (P Grade) Sehlopha sa Dummy (D Grade)
Diameter 99.5–100.0 limilimithara
Botenya (4H-Si) 500 µm ±20 µm 500 µm ±25 µm
Wafer Orientation Off axis: 4.0 ° ho ea ho <11-20> ± 0.5 ° bakeng sa 4H-N; Ka lehlakoreng le leng: <0001> ± 0.5 ° bakeng sa 4H-Si
Boima ba Micropipe (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Resistivity (4H-Si) ≥1E9 Ω·cm ≥1E5 Ω·cm
Maemo a Motheo a Flat (10-10) ± 5.0 °
Bolelele ba Phatlalatso ba Pele 32.5 limilimithara ±2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli 18.0 limilimithara ±2.0 limilimithara
Boemo ba Bobeli ba Flat Sefahleho sa silicon: 90 ° CW ho tloha sephara se seholo ± 5.0 °
Kenyelletso ea Edge 3 limilimithara
LTV/TTV/Bow Warp ≤3 µm/≤5 µm/≤15 µm/≤30 µm ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Ho thatafala (C sefahleho) Sepolishe Ra ≤1 nm
Bokhopo (Si face) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Edge Cracks By High Intensity Leseli Ha ho letho Bolelele ba kakaretso ≤10 mm; bolelele bo le bong ≤2 mm
Hex Plates By High Intensity Light Kakaretso ≤0.05% Kakaretso ≤0.05% Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng Ha ho letho Kakaretso ≤3%
Likakaretso tsa Carbon tse bonoang Kakaretso ≤0.05% Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light Ha ho letho Bolelele bo kopantseng ≤1 bophara ba wafer
Edge Chips Ka Leseli le Matla a Phahameng Ha ho e lumelletsoeng ≥0.2 mm bophara le botebo 5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng Ha ho letho Ha ho letho
Ho kheloha ha Screw Dislocation ≤500 cm⁻² N/A
Sephutheloana Multi-wafer cassette kapa single wafer setshelo


Nako ea poso: Jun-30-2025