Ho latela molao-motheo o sebetsang oa li-LED, ho hlakile hore thepa ea epitaxial wafer ke karolo ea mantlha ea LED. Ebile, li-parameter tsa bohlokoa tsa optoelectronic joalo ka wavelength, khanya, le voltage ea pele li khethoa haholo ke thepa ea epitaxial. Theknoloji ea Epitaxial wafer le lisebelisoa li bohlokoa haholo ts'ebetsong ea tlhahiso, 'me Metal-Organic Chemical Vapor Deposition (MOCVD) e le mokhoa o ka sehloohong oa ho holisa likarolo tse tšesaane tsa kristale e le 'ngoe ea metsoako ea III-V, II-VI, le li-alloys tsa tsona. Ka tlase ke mekhoa e meng ea nako e tlang ea theknoloji ea LED epitaxial wafer.
1. Ntlafatso ea Mokhoa oa Mehato e Meli ea Kholo
Hona joale, tlhahiso ea khoebo e sebelisa mehato e 'meli ea ho hōla, empa palo ea li-substrates tse ka jarisoang hang-hang e lekanyelitsoe. Le ha lits'ebetso tsa 6-wafer li se li holile, mechini e sebetsanang le li-wafers tse 20 e ntse e tsoela pele. Ho eketsa palo ea li-wafers hangata ho lebisa ho se ts'oaneng ho lekaneng ho likarolo tsa epitaxial. Liphetoho tse tlang li tla shebana le litsela tse peli:
- Ho nts'etsapele mahlale a lumellang ho kenya li-substrates tse ngata ka phaposing e le 'ngoe ea karabelo, ho etsa hore li tšoanelehe bakeng sa tlhahiso e kholo le phokotso ea litšenyehelo.
- E nts'etsapele lisebelisoa tse ikemetseng, tse phetoang ka sekoahelo se le seng.
2. Hydride Vapor Phase Epitaxy (HVPE) Technology
Theknoloji ena e nolofalletsa kholo e potlakileng ea lifilimi tse teteaneng tse nang le khatello e tlase ea dislocation, e ka sebetsang e le li-substrates bakeng sa kholo ea homoepitaxial ka mekhoa e meng. Ho feta moo, lifilimi tsa GaN tse arohaneng le substrate li ka fetoha mefuta e meng ea li-chips tse ngata tsa GaN single-crystal. Leha ho le joalo, HVPE e na le mathata, joalo ka bothata ba taolo e nepahetseng ea botenya le likhase tse senyang tse sitisang ntlafatso ea bohloeki ba thepa ea GaN.
Si-doped HVPE-GaN
(a) Sebopeho sa Si-doped HVPE-GaN reactor; (b) Setšoantšo sa 800 μm-tenya Si-doped HVPE-GaN;
(c) Kabo ea mahloriso a sejari sa mahala hammoho le bophara ba Si-doped HVPE-GaN
3. Khōlo e Khethehileng ea Epitaxial kapa Theknoloji ea Khōlo ea Lateral Epitaxial
Mokhoa ona o ka fokotsa ts'ebetso ea dislocation le ho ntlafatsa boleng ba kristale ea GaN epitaxial layers. Mokhoa ona o kenyelletsa:
- Ho beha lera la GaN holim'a substrate e loketseng (sapphire kapa SiC).
- Ho beha lesela la mask ea polycrystalline SiO₂ ka holimo.
- Ho sebelisa photolithography le etching ho theha lifensetere tsa GaN le li-mask tsa SiO₂.Nakong ea khōlo e latelang, GaN e qala ho hōla ka holimo lifensetereng ebe ka lehlakoreng le leng holim'a lihlopha tsa SiO₂.
Sephaphatha sa XKH's GaN-on-Sapphire
4. Pendeo-Epitaxy Technology
Mokhoa ona o fokotsa haholo bofokoli ba lattice bo bakoang ke ho se lumellane ha lattice le mocheso pakeng tsa substrate le epitaxial layer, e leng ho ntlafatsa boleng ba kristale ea GaN. Mehato e kenyelletsa:
- Ho hōlisa GaN epitaxial layer holim'a substrate e loketseng (6H-SiC kapa Si) ho sebelisa mehato e 'meli.
- Ho etsa etching e khethehileng ea epitaxial layer ho ea fihla substrate, ho theha tšiea e chenchana (GaN/buffer/substrate) le meaho ea foro.
- Ho holisa li-GaN layers, tse atolohang ho tloha mahlakoreng a litšiea tsa pele tsa GaN, tse fanyehiloeng holim'a liforo.Kaha ha ho na mask a sebelisoang, sena se qoba ho kopana lipakeng tsa GaN le lisebelisoa tsa mask.
Sephaphatha sa XKH's GaN-on-Silicon
5. Nts'etsopele ea Short-Wavelength UV LED Epitaxial Materials
Sena se rala motheo o tiileng bakeng sa li-LED tse tšoeu tse thehiloeng ho UV tse nang le phosphor. Li-phosphor tse ngata tse sebetsang hantle haholo li ka natefeloa ke leseli la UV, li fana ka ts'ebetso e phahameng e khanyang ho feta sistimi ea hajoale ea YAG: Ce, ka hona e nts'etsapele ts'ebetso e tšoeu ea LED.
6. Multi-Quantum Well (MQW) Chip Technology
Meahong ea MQW, litšila tse fapaneng li etsoa nakong ea kholo ea lesela le ntšang khanya ho etsa liliba tse fapaneng tsa quantum. Ho kopana hape ha li-photon tse tsoang lilibeng tsena ho hlahisa khanya e tšoeu ka ho toba. Mokhoa ona o ntlafatsa ts'ebetso e khanyang, o fokotsa litšenyehelo, 'me o nolofatsa liphutheloana le taolo ea potoloho, leha o fana ka liphephetso tse kholo tsa tekheniki.
7. Nts'etsopele ea Theknoloji ea "Photon Recycling".
Ka Pherekhong 1999, Sumitomo ea Japane e ile ea hlahisa LED e tšoeu e sebelisang thepa ea ZnSe. Theknoloji e kenyelletsa ho holisa filimi e tšesaane ea CdZnSe holim'a karoloana ea kristale e le 'ngoe ea ZnSe. Ha e kentsoe motlakase, filimi e hlahisa leseli le leputsoa, e kopanang le karolo e nyenyane ea ZnSe ho hlahisa khanya e tšehla e tlatsanang, e hlahisang khanya e tšoeu. Ka mokhoa o ts'oanang, Setsi sa Lipatlisiso sa Photonics sa Univesithi ea Boston se kentse motsoako oa semiconductor oa AlInGaP holim'a GaN-LED e putsoa ho hlahisa leseli le lesoeu.
8. Phallo ea Ts'ebetso ea Epitaxial Wafer ea LED
① Epitaxial Wafer Fabrication:
Substrate → Moralo oa sebopeho → Keketseho ea lera la Buffer → Khōlo ea lera la mofuta oa N-GaN → Khōlo ea lera e ntšang khanya ea MQW → Khōlo ea mofuta oa P-GaN → Ho hlophisoa → Teko (photoluminescence, X-ray) → Epitaxial wafer
② Ho etsa Chip:
Epitaxial wafer → Moralo oa mask le ho qapa → Photolithography → Ion etching → electrode ea mofuta oa N (deposition, annealing, etching) → mofuta oa P-electrode (deposition, annealing, etching) → Dicing → Tlhahlobo ea chip le ho hlopha.
Sephaphatha sa ZMSH sa GaN-on-SiC
Nako ea poso: Jul-25-2025