p-mofuta 4H/6H-P 3C-N MOFUTA SIC substrate 4inch 〈111〉± 0.5°Zero MPD
4H/6H-P Mofuta oa SiC Composite Substrates Tafole e tloaelehileng ea parameter
4 silika bophara ba lisenthimitharaKarolo e nyenyane ea Carbide (SiC). Tlhaloso
Kereiti | Zero MPD Tlhahiso Kereiti (Z Kereiti) | Tlhahiso e Tloaelehileng Kereiti (P Kereiti) | Sehlopha sa Dummy (D Kereiti) | ||
Diameter | 99.5 limilimithara ~ 100.0 limilimithara | ||||
Botenya | 350 μm ± 25 μm | ||||
Wafer Orientation | Ka thoko: 2.0°-4.0° ho leba [1120] ± 0.5° bakeng sa 4H/6H-P, On axis:〈111〉± 0.5° bakeng sa 3C-N | ||||
Boima ba Micropipe | 0cm-2 | ||||
Ho hanyetsa | mofuta oa 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
n-mofuta 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
Mokhoa oa mantlha oa Flat | 4H/6H-P | - {1010} ± 5.0° | |||
3C-N | - {110} ± 5.0° | ||||
Bolelele ba Phatlalatso ba Pele | 32.5 limilimithara ± 2.0 limilimithara | ||||
Bolelele ba Bokhabane ba Bobeli | 18.0 limilimithara ± 2.0 limilimithara | ||||
Boemo ba Bobeli ba Flat | Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat±5.0° | ||||
Kenyelletso ea Edge | 3 limilimithara | 6 limilimithara | |||
LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
Boqhobane | Polish Ra≤1 nm | ||||
CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
Edge Cracks By High Intensity Leseli | Ha ho letho | Bolelele bo akaretsang ≤ 10 mm, bolelele bo le bong≤2 mm | |||
Hex Plates By High Intensity Light | Kakaretso ≤0.05% | Kakaretso ≤0.1% | |||
Libaka tsa Polytype Ka Leseli le Matla a Phahameng | Ha ho letho | Kakaretso≤3% | |||
Likakaretso tsa Carbon tse bonoang | Kakaretso ≤0.05% | Kakaretso ≤3% | |||
Silicon Surface Scratches By High Intensity Light | Ha ho letho | Bolelele ba kakaretso≤1× bophara ba wafer | |||
Edge Chips Phahameng ka ho Matla Leseli | Ha ho e lumelletsoeng ≥0.2mm bophara le botebo | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |||
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng | Ha ho letho | ||||
Sephutheloana | Multi-wafer Cassette kapa Single Wafer Container |
Lintlha:
※ Meeli ea bofokoli e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. # Mengoallo e lokela ho hlahlojoa ho Si face feela.
Mofuta oa P-type 4H/6H-P 3C-N mofuta oa 4-inch SiC substrate e nang le 〈111〉± 0.5° orientation le Zero MPD grade e sebelisoa haholo lits'ebetsong tsa elektroniki tse sebetsang hantle. Ts'ebetso ea eona e ntle ea mocheso le matla a phahameng a ho senyeha ho etsa hore e be e loketseng bakeng sa lisebelisoa tsa elektroniki, joalo ka li-switches tse nang le matla a phahameng a motlakase, li-inverters le li-converter tsa motlakase tse sebetsang maemong a feteletseng. Ho feta moo, khanyetso ea substrate ho mocheso o phahameng le kutu e tiisa ts'ebetso e tsitsitseng libakeng tse thata. Mokhoa o nepahetseng oa 〈111〉± 0.5° o ntlafatsa ho nepahala ha tlhahiso, ho etsa hore e loketse lisebelisoa tsa RF le lits'ebetso tsa maqhubu a holimo, joalo ka lisebelisoa tsa radar le lisebelisoa tsa puisano tse se nang mohala.
Melemo ea li-substrates tse kopaneng tsa mofuta oa N-SiC li kenyelletsa:
1. High Thermal Conductivity: Ho senya mocheso o sebetsang hantle, ho etsa hore e tšoanelehe bakeng sa libaka tse phahameng tsa mocheso le lisebelisoa tse matla haholo.
2. High Breakdown Voltage: E netefatsa ts'ebetso e ka tšeptjoang lits'ebetsong tse phahameng tsa motlakase tse kang li-converter tsa matla le li-inverters.
3. Zero MPD (Micro Pipe Defect) Sehlopha: E fana ka tiiso ea liphoso tse fokolang, ho fana ka botsitso le botšepehi bo phahameng ka lisebelisoa tsa bohlokoa tsa elektronike.
4. Corrosion Resistance: E tšoarella libakeng tse thata, ho netefatsa ts'ebetso ea nako e telele maemong a boima.
5. E Nepahetseng 〈111〉± 0.5 ° Orientation: E lumella ho lumellana ho nepahetseng nakong ea tlhahiso, ho ntlafatsa ts'ebetso ea lisebelisoa ka maqhubu a phahameng le lisebelisoa tsa RF.
Ka kakaretso, mofuta oa P-type 4H/6H-P 3C-N mofuta oa 4-inch SiC substrate e nang le 〈111〉± 0.5° orientation le Zero MPD grade ke thepa e sebetsang hantle e loketseng lits'ebetso tse tsoetseng pele tsa elektroniki. Ts'ebetso ea eona e ntle ea mocheso le matla a phahameng a ho senyeha ho etsa hore e be e loketseng lisebelisoa tsa elektroniki tse kang li-switches tse nang le matla a phahameng, li-inverters le li-converter. Mophato oa Zero MPD o netefatsa mefokolo e fokolang, e fana ka ts'epo le botsitso lisebelisoa tsa bohlokoa. Ho feta moo, khanyetso ea substrate ho kutu le mocheso o phahameng o tiisa ho tšoarella libakeng tse thata. Mokhoa o nepahetseng oa 〈111〉± 0.5° o lumella ho lokisoa ho nepahetseng nakong ea tlhahiso, ho etsa hore e tšoanelehe haholo bakeng sa lisebelisoa tsa RF le lits'ebetso tsa maqhubu a holimo.