mofuta oa p 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Tlhaloso e Khutšoanyane:

Substrate ea mofuta oa P 4H/6H-P 3C-N SiC, e bolelele ba lisenthimithara tse 4 e nang le tataiso ea 〈111〉± 0.5° le sehlopha sa Zero MPD (Micro Pipe Defect), ke thepa ea semiconductor e sebetsang hantle e etselitsoeng tlhahiso ea lisebelisoa tsa elektroniki tse tsoetseng pele. E tsebahala ka ho tsamaisa mocheso hantle, motlakase o phahameng oa ho senyeha, le ho hanyetsa mocheso o phahameng le mafome, substrate ena e loketse lisebelisoa tsa elektroniki tsa motlakase le tsa RF. Sehlopha sa Zero MPD se tiisa liphoso tse fokolang, se netefatsa ho tšepahala le botsitso lisebelisoa tse sebetsang hantle. 〈111〉± 0.5° e nepahetseng e lumella ho lumellana hantle nakong ea tlhahiso, e leng se etsang hore e lokele lits'ebetso tse kholo tsa tlhahiso. Substrate ena e sebelisoa haholo lisebelisoa tsa elektroniki tsa mocheso o phahameng, motlakase o phahameng, le maqhubu a phahameng, joalo ka li-converter tsa motlakase, li-inverter le likarolo tsa RF.


Likaroloana

4H/6H-P Mofuta oa SiC Composite Substrates Tafole ea liparamente tse tloaelehileng

4 Silicone bophara ba lisenthimitharaKarolo e ka tlase ea Carbide (SiC) Tlhaloso

 

Sehlopha Tlhahiso ea MPD ha e eo

Sehlopha (Z) Sehlopha)

Tlhahiso e Tloaelehileng

Sehlopha (P) Sehlopha)

 

Sehlopha sa Mashano (D Sehlopha)

Bophara 99.5 mm ~ 100.0 mm
Botenya 350 μm ± 25 μm
Boikutlo ba Wafer Mothati o sa sebetseng: 2.0°-4.0° ho ya ho [11]2(-)0] ± 0.5° bakeng sa 4H/6H-P, Omothapo oa n:〈111〉± 0.5° bakeng sa 3C-N
Botebo ba Micropipe 0 cm-2
Ho hanyetsa mofuta oa p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
mofuta oa n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Boikutlo ba Motheo bo bataletseng 4H/6H-P -

{1010} ± 5.0°

3C-N -

{110} ± 5.0°

Bolelele ba Sephara ba Motheo 32.5 mm ± 2.0 mm
Bolelele ba Bobedi bo Sephara 18.0 mm ± 2.0 mm
Boikutlo bo Bobedi bo bataletseng Silicon e shebile holimo: 90° CW. ho tloha Prime flat±5.0°
Ho se kenyeletsoe ha Moeli 3 mm 6 mm
LTV/TTV/Seqha/Sekotwana ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ho ba le makukuno Ra≤1 nm ea Poland
CMP Ra≤0.2 nm Ra≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Ha ho letho Bolelele bo bokellaneng ≤ 10 mm, bolelele bo le bong ≤2 mm
Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.1%
Libaka tsa Polytype ka Leseli le Matla a Phahameng Ha ho letho Sebaka se bokellaneng ≤3%
Ho kenyeletsoa ha Khabone e Bonahalang Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤3%
Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho Bolelele bo bokellaneng ≤1 × bophara ba wafer
Li-chips tsa Edge tse Phahameng ka Matla a Phahameng Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm 5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Bokaholimo ba Silicon ka Matla a Phahameng Ha ho letho
Sephutheloana Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer

Lintlha:

※Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko ho moeli. # Mengoapo e lokela ho hlahlojoa sefahlehong sa Si feela.

Substrate ea P-type 4H/6H-P 3C-N ea 4-inch SiC e nang le 〈111〉± 0.5° orientation le Zero MPD grade e sebelisoa haholo lits'ebetsong tsa elektroniki tse sebetsang hantle. Ho tsamaisa mocheso hantle le motlakase o phahameng ho etsa hore e be ntle bakeng sa lisebelisoa tsa elektroniki tsa motlakase, joalo ka li-switch tsa motlakase o phahameng, li-inverter le li-converter tsa motlakase, tse sebetsang maemong a feteletseng. Ho feta moo, ho hanyetsa substrate mochesong o phahameng le mafome ho netefatsa ts'ebetso e tsitsitseng libakeng tse thata. 〈111〉± 0.5° orientation e nepahetseng e ntlafatsa ho nepahala ha tlhahiso, e etsa hore e lokele lisebelisoa tsa RF le lits'ebetso tsa maqhubu a phahameng, joalo ka litsamaiso tsa radar le lisebelisoa tsa puisano tse se nang mohala.

Melemo ea li-substrate tsa mofuta oa N SiC tse kopaneng e kenyelletsa:

1. Ho Tsamaisa Mocheso o Phahameng: Ho qhala mocheso ka katleho, ho etsa hore o lokele dibaka tse nang le mocheso o phahameng le ditshebediso tse nang le matla a mangata.
2. Motlakase o Senyehileng ka ho Fetisisa: E netefatsa ts'ebetso e tšepahalang lits'ebetsong tsa motlakase o phahameng joalo ka li-converter tsa motlakase le li-inverter.
3. Lefeela la MPD (Micro Pipe Defect): E netefatsa diphoso tse fokolang, e fana ka botsitso le tshepahalo e phahameng disebedisweng tsa bohlokwa tsa elektroniki.
4. Ho Hanela Tshenyo: E tšoarella dibakeng tse thata, e netefatsa tshebetso ya nako e telele maemong a thata.
5. 〈111〉± 0.5° Tataiso e Nepahetseng: E ​​dumella ho lekalekana ho nepahetseng nakong ya tlhahiso, e ntlafatsa tshebetso ya sesebediswa ditshebedisong tsa maqhubu a hodimo le tsa RF.

 

Ka kakaretso, substrate ea P-type 4H/6H-P 3C-N ea 4-inch SiC e nang le tataiso ea 〈111〉± 0.5° le sehlopha sa Zero MPD ke thepa e sebetsang hantle e loketseng lits'ebetso tse tsoetseng pele tsa elektroniki. Tsamaiso ea eona e ntle ea mocheso le motlakase o phahameng oa ho senyeha li etsa hore e be e phethahetseng bakeng sa lisebelisoa tsa motlakase tse kang li-switch tsa motlakase o phahameng, li-inverter le li-converter. Sehlopha sa Zero MPD se netefatsa liphoso tse fokolang, se fana ka ts'epo le botsitso lisebelisoa tsa bohlokoa. Ho feta moo, ho hanyetsa ha substrate ho ts'enyeho le mocheso o phahameng ho netefatsa ho tšoarella libakeng tse thata. 〈111〉± 0.5° e nepahetseng e lumella ho lumellana hantle nakong ea tlhahiso, e leng se etsang hore e tšoanelehe haholo bakeng sa lisebelisoa tsa RF le lits'ebetso tsa maqhubu a phahameng.

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