p-mofuta 4H/6H-P 3C-N MOFUTA SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Tlhaloso e Khutšoanyane:

Mofuta oa P-mofuta oa 4H/6H-P 3C-N mofuta oa SiC substrate, 4-inch e nang le 〈111〉± 0.5° orientation le grade ea Zero MPD (Micro Pipe Defect), ke lisebelisoa tsa semiconductor tse sebetsang hantle tse etselitsoeng lisebelisoa tsa elektroniki tse tsoetseng pele. tlhahiso. E tsebahala ka mokhoa oa eona o motle oa ho tsamaisa mocheso, matla a phahameng a ho senyeha, le ho hanyetsa ka matla mocheso o phahameng le ho bola, substrate ena e loketse lisebelisoa tsa elektroniki tsa motlakase le lits'ebetso tsa RF. Sehlopha sa Zero MPD se tiisa liphoso tse fokolang, ho netefatsa ho ts'epahala le botsitso ho lisebelisoa tse sebetsang hantle. Mokhoa oa eona o nepahetseng oa 〈111〉± 0.5° o lumella ho lokisoa ho nepahetseng nakong ea ho etsoa, ho etsa hore e loketse lits'ebetso tse kholo tsa tlhahiso. Substrate ena e sebelisoa haholo lisebelisoa tsa elektroniki tse nang le mocheso o phahameng, matla a phahameng le a maqhubu a phahameng, joalo ka li-converter tsa motlakase, li-inverters le likarolo tsa RF.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

4H/6H-P Mofuta oa SiC Composite Substrates Tafole e tloaelehileng ea parameter

4 silika bophara ba lisenthimitharaKarolo e nyenyane ea Carbide (SiC). Tlhaloso

Kereiti			Zero MPD Tlhahiso Kereiti (Z Kereiti)	Tlhahiso e Tloaelehileng Kereiti (P Kereiti)	Sehlopha sa Dummy (D Kereiti)
Diameter			99.5 limilimithara ~ 100.0 limilimithara
Botenya			350 μm ± 25 μm
Wafer Orientation			Ka thoko: 2.0°-4.0° ho leba [112(-)0] ± 0.5° bakeng sa 4H/6H-P, On axis:〈111〉± 0.5° bakeng sa 3C-N
Boima ba Micropipe			0cm-2
Ho hanyetsa	mofuta oa 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mofuta 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Maemo a Motheo a Flat		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Bolelele ba Phatlalatso ba Pele			32.5 limilimithara ± 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli			18.0 limilimithara ± 2.0 limilimithara
Boemo ba Bobeli ba Flat			Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat±5.0°
Kenyelletso ea Edge			3 limilimithara		6 limilimithara
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Boqhobane			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Leseli			Ha ho letho		Bolelele bo akaretsang ≤ 10 mm, bolelele bo le bong≤2 mm
Hex Plates By High Intensity Light			Kakaretso ≤0.05%		Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng			Ha ho letho		Kakaretso≤3%
Likakaretso tsa Carbon tse bonoang			Kakaretso ≤0.05%		Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light			Ha ho letho		Bolelele bo kopaneng≤1× bophara ba wafer
Edge Chips Phahameng ka ho Matla Leseli			Ha ho e lumelletsoeng ≥0.2mm bophara le botebo		5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng			Ha ho letho
Sephutheloana			Multi-wafer Cassette kapa Single Wafer Container

Lintlha:

※ Meeli ea bofokoli e sebetsa sebakeng sohle sa wafer ntle le sebaka se qheletsoeng ka thoko. # Mengoallo e lokela ho hlahlojoa ho Si face feela.

Mofuta oa P-type 4H/6H-P 3C-N mofuta oa 4-inch SiC substrate e nang le 〈111〉± 0.5° orientation le Zero MPD grade e sebelisoa haholo lits'ebetsong tsa elektroniki tse sebetsang hantle. Ts'ebetso ea eona e ntle ea mocheso le matla a phahameng a ho senyeha ho etsa hore e be e loketseng bakeng sa lisebelisoa tsa elektroniki, joalo ka li-switches tse nang le matla a phahameng a motlakase, li-inverters le li-converter tsa motlakase tse sebetsang maemong a feteletseng. Ho feta moo, khanyetso ea substrate ho mocheso o phahameng le kutu e netefatsa ts'ebetso e tsitsitseng libakeng tse thata. Mokhoa o nepahetseng oa 〈111〉± 0.5° o ntlafatsa ho nepahala ha tlhahiso, ho etsa hore e loketse lisebelisoa tsa RF le lits'ebetso tsa maqhubu a holimo, joalo ka lisebelisoa tsa radar le lisebelisoa tsa puisano tse se nang mohala.

Melemo ea li-substrates tse kopaneng tsa mofuta oa N-SiC li kenyelletsa:

1. High Thermal Conductivity: Ho senya mocheso o sebetsang hantle, ho etsa hore e tšoanelehe bakeng sa libaka tse phahameng tsa mocheso le lisebelisoa tse matla haholo.
2. High Breakdown Voltage: E netefatsa ts'ebetso e ka tšeptjoang lits'ebetsong tse phahameng tsa motlakase tse kang li-converter tsa matla le li-inverters.
3. Zero MPD (Micro Pipe Defect) Sehlopha: E fana ka tiiso ea liphoso tse fokolang, ho fana ka botsitso le botšepehi bo phahameng ka lisebelisoa tsa bohlokoa tsa elektronike.
4. Corrosion Resistance: E tšoarella libakeng tse thata, ho netefatsa ts'ebetso ea nako e telele maemong a boima.
5. E Nepahetseng 〈111〉± 0.5 ° Orientation: E lumella ho lumellana ho nepahetseng nakong ea tlhahiso, ho ntlafatsa ts'ebetso ea lisebelisoa ka maqhubu a phahameng le lisebelisoa tsa RF.

Ka kakaretso, mofuta oa P-type 4H/6H-P 3C-N mofuta oa 4-inch SiC substrate e nang le 〈111〉± 0.5° orientation le Zero MPD grade ke thepa e sebetsang hantle e loketseng lits'ebetso tse tsoetseng pele tsa elektroniki. Ts'ebetso ea eona e ntle ea mocheso le matla a phahameng a ho senyeha ho etsa hore e be e loketseng lisebelisoa tsa elektroniki tse kang li-switches tse nang le matla a phahameng, li-inverters le li-converter. Mophato oa Zero MPD o netefatsa mefokolo e fokolang, e fana ka ts'epo le botsitso lisebelisoa tsa bohlokoa. Ho feta moo, khanyetso ea substrate ho kutu le mocheso o phahameng o tiisa ho tšoarella libakeng tse thata. Mokhoa o nepahetseng oa 〈111〉± 0.5° o lumella ho lokisoa ho nepahetseng nakong ea tlhahiso, ho etsa hore e tšoanelehe haholo bakeng sa lisebelisoa tsa RF le lits'ebetso tsa maqhubu a holimo.