P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha

Tlhaloso e Khutšoanyane:

2 inch P-Type Silicon Carbide (SiC) Wafer ka 4H kapa 6H polytype. E na le thepa e ts'oanang le ea mofuta oa N-mofuta oa Silicon Carbide (SiC), joalo ka ho hanyetsa mocheso o phahameng, conductivity e phahameng ea mocheso, motlakase o phahameng oa motlakase, joalo-joalo P-mofuta oa SiC substrate hangata o sebelisetsoa ho etsa lisebelisoa tsa motlakase, haholo-holo ho etsoa ha Insulated. Heke Bipolar Transistors (IGBT). Moralo oa IGBT hangata o kenyelletsa likhokahano tsa PN, moo P-type SiC e ka bang molemo bakeng sa ho laola boitšoaro ba lisebelisoa.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Li-substrates tsa mofuta oa P-silicon carbide li atisa ho sebelisoa ho etsa lisebelisoa tsa motlakase, tse kang Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, e leng sesebelisoa sa ho tima. MOSFET=IGFET(metal oxide semiconductor field effect tube, kapa insulated heke mofuta oa tšimo phello transistor). BJT(Bipolar Junction Transistor, eo hape e tsejoang e le transistor), bipolar e bolela hore ho na le mefuta e 'meli ea li-electrone le li-hole carriers tse amehang ts'ebetsong ea conduction mosebetsing, ka kakaretso ho na le PN junction e amehang tsamaisong.

Sephaphatha sa 2-inch p-type silicon carbide (SiC) se ka har'a 4H kapa 6H polytype. E na le thepa e tšoanang le ea li-wafers tsa n-type silicon carbide (SiC), joalo ka ho hanyetsa mocheso o phahameng, conductivity e phahameng ea mocheso, le motlakase o phahameng oa motlakase. Li-substrates tsa SiC tsa mofuta oa p li atisa ho sebelisoa ha ho etsoa lisebelisoa tsa motlakase, haholo-holo bakeng sa ho etsa li-insulated-gate bipolar transistors (IGBTs). moralo oa li-IGBT hangata o kenyelletsa li-junctions tsa PN, moo p-type SiC e leng molemo bakeng sa ho laola boitšoaro ba sesebelisoa.