P-mofuta oa SiC oafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation

P-type SiC wafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation Featured Image

Tlhaloso e Khutšoanyane:

Sephaphatha sa SiC sa mofuta oa P, 4H/6H-P 3C-N, ke sesebelisoa sa semiconductor sa 6-inch se nang le botenya ba 350 μm le sebopeho sa mantlha se sephara, se etselitsoeng lits'ebetso tse tsoetseng pele tsa elektroniki. Sefate sena se tsebahala ka ho tsamaisa mocheso o phahameng, matla a phahameng a ho senyeha, le ho hanyetsa mocheso o feteletseng le libaka tse senyang, sephaphatha sena se loketse lisebelisoa tsa elektroniki tse sebetsang hantle haholo. P-type doping e hlahisa masoba e le eona e tsamaisang litefiso tsa mantlha, e etsa hore e be e loketseng lisebelisoa tsa elektroniki tsa motlakase le lits'ebetso tsa RF. Sebopeho sa eona se matla se tiisa ts'ebetso e tsitsitseng tlas'a maemo a phahameng a matla le a maqhubu a phahameng, ho etsa hore e tšoanelehe bakeng sa lisebelisoa tsa matla, lisebelisoa tsa elektronike tse nang le mocheso o phahameng, le phetoho e phahameng ea matla a matla. Mokhoa o ka sehloohong oa mokhoa o bataletseng o tiisa ho lumellana ho nepahetseng ts'ebetsong ea tlhahiso, ho fana ka ts'ebetso e tsitsitseng ea ho etsa lisebelisoa.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Specification4H/6H-P Mofuta oa SiC Composite Substrates Tafole e tloaelehileng ea parameter

6 inch bophara ba Silicon Carbide (SiC) Substrate Tlhaloso

Kereiti			Zero MPD TlhahisoKereiti (Z Kereiti)	Tlhahiso e TloaelehilengKereiti (P Kereiti)	Sehlopha sa Dummy (D Kereiti)
Diameter			145.5 limilimithara ~ 150.0 limilimithara
Botenya			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0° -4.0° ho leba [1120] ± 0.5° bakeng sa 4H/6H-P, Ho axis:〈111〉± 0.5° bakeng sa 3C-N
Boima ba Micropipe			0cm-2
Ho hanyetsa	mofuta oa 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mofuta 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Maemo a Motheo a Flat		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Bolelele ba Phatlalatso ba Pele			32.5 limilimithara ± 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli			18.0 limilimithara ± 2.0 limilimithara
Boemo ba Bobeli ba Flat			Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat ± 5.0°
Kenyelletso ea Edge			3 limilimithara		6 limilimithara
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Boqhobane			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Leseli			Ha ho letho		Bolelele bo akaretsang ≤ 10 mm, bolelele bo le bong≤2 mm
Hex Plates By High Intensity Light			Kakaretso ≤0.05%		Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng			Ha ho letho		Kakaretso≤3%
Likakaretso tsa Carbon tse bonoang			Kakaretso ≤0.05%		Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light			Ha ho letho		Bolelele ba kakaretso≤1× bophara ba wafer
Edge Chips Phahameng ka ho Matla Leseli			Ha ho e lumelletsoeng ≥0.2mm bophara le botebo		5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng			Ha ho letho
Sephutheloana			Multi-wafer Cassette kapa Single Wafer Container

Lintlha:

※ Meeli ea bofokoli e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. # Mengoako e lokela ho hlahlojoa ho Si face o

Sephaphatha sa SiC sa mofuta oa P, 4H/6H-P 3C-N, se nang le boholo ba 6-inch le botenya ba 350 μm, se bapala karolo ea bohlokoa tlhahisong ea indasteri ea lisebelisoa tsa elektroniki tse sebetsang hantle. Ts'ebetso ea eona e ntle ea mocheso le matla a phahameng a ho senyeha ho etsa hore e be e loketseng bakeng sa lisebelisoa tsa tlhahiso tse kang li-switches tsa motlakase, li-diode le li-transistors tse sebelisoang libakeng tse nang le mocheso o phahameng joalo ka likoloi tsa motlakase, marang-rang a motlakase le lisebelisoa tse nchafalitsoeng tsa matla. Bokhoni ba wafer ea ho sebetsa hantle maemong a thata bo netefatsa ts'ebetso e tšepahalang lits'ebetsong tsa indasteri tse hlokang matla a phahameng a matla le matla a matla. Ntle le moo, sebopeho sa eona sa mantlha se sephara se thusa ho hokahana hantle nakong ea ho etsoa ha sesebelisoa, ho ntlafatsa ts'ebetso ea tlhahiso le botsitso ba sehlahisoa.

Melemo ea N-mofuta oa SiC composite substrates e kenyelletsa

High Thermal Conductivity: Li-wafers tsa SiC tsa mofuta oa P li tlosa mocheso ka katleho, li etsa hore e be tse loketseng bakeng sa lisebelisoa tse phahameng tsa mocheso.
Motlakase o phahameng oa ho senya: E khona ho mamella li-voltage tse phahameng, e netefatsa ho ts'epahala ho lisebelisoa tsa elektronike tse matla le lisebelisoa tse phahameng haholo.
Ho hanyetsana le Tikoloho e thata: Ho tšoarella ka mokhoa o babatsehang maemong a feteletseng, joalo ka mocheso o phahameng le libaka tse senyang.
Phetoho e Matla ea Matla: Doping ea mofuta oa P e thusa ho sebetsana hantle le matla, ho etsa hore sephaphatha se lokele lits'ebetso tsa phetolo ea matla.
Maemo a Motheo a Flat: E netefatsa tumellano e nepahetseng nakong ea tlhahiso, e ntlafatsa ho nepahala le ho tsitsa ha sesebelisoa.
Sebopeho se Sesesane (350 μm): Botenya bo nepahetseng ba wafer bo tšehetsa ho hokahana le lisebelisoa tsa elektroniki tse hahelletsoeng sebakeng.

Ka kakaretso, sephaphatha sa SiC sa mofuta oa P, 4H/6H-P 3C-N, se fana ka melemo e mengata e etsang hore se tšoanelehe haholo bakeng sa lits'ebetso tsa indasteri le tsa elektroniki. Mocheso oa eona o phahameng oa mocheso le motlakase oa ho senya o nolofalletsa ts'ebetso e ka tšeptjoang libakeng tse phahameng tsa mocheso le mocheso o phahameng, ha ho hanyetsa maemo a thata ho tiisa ho tšoarella. Doping ea mofuta oa P e lumella phetoho e nepahetseng ea matla, e etsa hore e be e loketseng bakeng sa lisebelisoa tsa motlakase le lisebelisoa tsa matla. Ho feta moo, sebaka sa mantlha sa sephara sa wafer se netefatsa teka-tekano e nepahetseng nakong ea ts'ebetso ea tlhahiso, e matlafatsa ts'ebetso ea tlhahiso. Ka botenya ba 350 μm, e loketse hantle bakeng sa ho kopanngoa le lisebelisoa tse tsoetseng pele, tse kopanetsoeng.