Lihlahisoa
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya
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4H-N/6H-N SiC Wafer Reasearch tlhahiso ea Dummy grade Dia150mm Silicon carbide substrate
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12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse bakeng sa mocheso o phahameng oa lisebelisoa tsa mocheso
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Dia300x1.0mmt Thickness Sapphire Wafer C-Plane SSP/DSP
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8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm tlhahiso ea sehlopha sa lipatlisiso sehlopheng sa moetlo o bentšitsoeng
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8 inch 200mm Sapphire substrate sapphire wafer e tšesaane botenya 1SP 2SP 0.5mm 0.75mm
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HPSI SiC wafer dia:3inch botenya:350um± 25 µm bakeng sa Power Electronics
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Single kristale Al2O3 99.999% Dia200mm safire wafers 1.0mm 0.75mm botenya
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156mm 159mm 6 inch Sapphire Wafer bakeng sa sepalangoang sa C-Plane DSP TTV
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C/A/M axis 4 inch sapphire wafers single crystal Al2O3,SSP DSP high hardness sapphire substrate
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade
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P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha