Lihlahisoa
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Sekoahelo sa SIC sa lisenthimithara tse 12 sa silicon carbide prime grade bophara 300mm boholo bo boholo 4H-N E loketse ho qhala mocheso oa sesebelisoa se nang le matla a mangata
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Botenya ba Dia300x1.0mmt Sapphire Wafer C-Plane SSP/DSP
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Sekoahelo sa sapphire sa lisenthimithara tse 8 200mm sa wafer e tšesaane botenya ba 1SP 2SP 0.5mm 0.75mm
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HPSI SiC wafer dia: 3inch botenya: 350um ± 25 µm bakeng sa Power Electronics
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8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm oa sehlopha sa lipatlisiso sa tlhahiso ea sehlopha sa substrate e bentšitsoeng ka mokhoa o ikhethileng
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Li-wafer tsa safire tsa kristale e le 'ngoe Al2O3 99.999% Dia200mm 1.0mm 0.75mm botenya
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Wafer ea Sapphire ea 156mm 159mm ea lisenthimithara tse 6 bakeng sa mojari oa C-Plane DSP TTV
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Sekhahla sa C/A/M sa li-wafer tsa safire tsa lisenthimithara tse 4 tse nang le kristale e le 'ngoe Al2O3, SSP DSP substrate ea safire e thata haholo
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3inch Bohloeki bo phahameng ba Semi-Insulation （HPSI）SiC wafer 350um Dummy grade Prime grade
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Sehlahisoa se secha sa P-type SiC substrate SiC wafer Dia2inch
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Mokhoa oa ho sebetsana le bokaholimo ba lithupa tsa laser tsa safire tse nang le titanium
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Li-wafer tsa SiC tsa Silicon Carbide tse 8inch 200mm 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya