Lihlahisoa
-
Mokhoa oa ho sebetsa ka holim'a metsi oa titanium-doped sapphire crystal laser rods
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
-
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos
-
200mm 8inch GaN holim'a sapphire Epi-layer wafer substrate
-
Sapphire tube KY Method kaofela pepeneneng Customizable
-
6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm
-
Thepa ea Infrared Nanosecond Laser Drilling bakeng sa Botenya ba Khalase ea ho Cheka≤20mm
-
Microjet tham mong bang laser thekenoloji thepa sephaha seha SiC thepa sebetsa
-
Silicon carbide diamond terata mochini o sehang 4/6/8/12 inch SiC ingot process
-
Mokhoa oa CVD oa ho hlahisa lisebelisoa tse tala tsa SiC ka har'a sebōpi sa silicon carbide synthesis ho 1600 ℃.
-
Silicon carbide ho hanyetsa sebōpi se selelele sa kristale se holang 6/8/12inch SiC ingot crystal PVT mokhoa
-
Mochini o habeli oa lisekoere mochini oa monocrystalline silicon rod process 6/8/12 inch surface flatness Ra≤0.5μm