Lihlahisoa
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p-mofuta 4H/6H-P 3C-N MOFUTA SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-mofuta 4H/6H-P 3C-N 4inch e nang le botenya ba 350um Sehlopha sa Tlhahiso ea Dummy
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4H/6H-P 6inch SiC wafer Zero MPD kereiti ya Tlhahiso Kereiti ya Dummy
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P-mofuta oa SiC oafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation
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Alumina ceramic arm tloaelo Letsoho la robotic la Ceramic
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Sapphire tube KY Method kaofela pepeneneng Customizable
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Al2O3 99.999% safire tloaelo lehare pepeneneng apara manganga 38×4.5×0.3mmt
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Sapphire blade hair transplant e ka etsoa molemong oa bongaka
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Lilac YAG phofo e tala ea thepa e pherese setokong
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Ts'ebetso ea TVG ho quartz sapphire BF33 wafer Sephaephe sa khalase se phunyeletsang
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Mofuta o le Mong oa Crystal Silicon Wafer Si Substrate Type N/P Optional Silicon Carbide Wafer
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N-Type SiC Composite Substrates Dia6inch Monocrystaline ea boleng bo holimo le substrate ea boleng bo tlase