Lihlahisoa
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Sapphire tube precision e etsa tube e pepeneneng Al2O3 kristale e sa keneleng boima bo phahameng ba EFG/KY tloaelo e fapaneng ea ho bentša bophara
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2 inch Sic silicon carbide substrate 6H-N Mofuta oa 0.33mm 0.43mm ho belisoa ka mahlakoreng a mabeli
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm bakeng sa kalafo ya laser ya bongaka
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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Sapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% Single Crystal
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selikalikoe sa safire se entsoeng ka safire ka botlalo se entsoe ka thepa ea safire e Transparent lab e entsoeng ka safire
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SiC substrate 3inch 350um botenya HPSI mofuta Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N mofuta Dummy/prime grade botenya ka ba customized
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6 ho Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H mofuta oa Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade
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3 inch High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)