Lisebelisoa tsa Khōlo ea Sapphire Ingot Czochralski CZ Mokhoa oa ho Hlahisa Liphaephe tsa Sapphire tsa 2inch-12inch

Sesebediswa sa Khōlo sa Sapphire Ingot Czochralski CZ Mokhoa oa ho Hlahisa 2inch-12inch Sapphire Wafers Setšoantšo se Hlahelitsoeng

Tlhaloso e Khutšoanyane:

Sapphire Ingot Growth Equipment (Czochralski Method) ke sistimi e tsoetseng pele e etselitsoeng kholo ea kristale e le 'ngoe ea kristale ea safire e nang le bohloeki bo phahameng. Mokhoa oa Czochralski (CZ) o thusa ho laola ka nepo lebelo la ho hula kristale ea peo (0.5-5 mm/h), sekhahla sa ho potoloha (5–30 rpm), le likhahla tsa mocheso ka har'a iridium crucible, e hlahisang likristale tsa axisymmetric tse fihlang ho 12 inches (300 mm) ka bophara. Sesebelisoa sena se ts'ehetsa taolo ea kristale ea C/A-plane, e nolofalletsang kholo ea boemo ba optical-grade, electronic-grade, le sapphire e nang le doped (mohlala, Cr³⁺ ruby, Ti³⁺ star sapphire).

XKH e fana ka litharollo tsa ho qetela, ho kenyeletsoa tlhahiso ea lisebelisoa (2-12-inch wafer production), ts'ebetso ea ts'ebetso (defect density <100/cm²), le koetliso ea tekheniki, ka tlhahiso ea khoeli le khoeli ea li-wafers tse 5,000+ bakeng sa lits'ebetso tse kang li-substrates tsa LED, GaN epitaxy, le semiconductor packaging.

Re romelle lengolo-tsoibila

Likaroloana

Molao-motheo oa ho Sebetsa

Mokhoa oa CZ o sebetsa ka mehato e latelang:
1. Lisebelisoa tse tala tse qhibilihang: Bohloeki bo phahameng ba Al₂O₃ (bohloeki> 99.999%) bo qhibiliha ka iridium crucible ka 2050-2100 ° C.
2. Selelekela sa Crystal ea Peo: kristale ea peo e theoleloa ka har'a ho qhibiliha, e lateloa ke ho hula ka potlako ho etsa molala (bophara <1 mm) ho felisa ho kheloha.
3. Sebopeho sa Mahetla le Khōlo ea Bongata: Lebelo la ho hula le fokotsehile ho 0.2-1 mm / h, butle-butle le atolosa bophara ba kristale ho ea boholo ba sepheo (mohlala, 4-12 inches).
4. Annealing le Cooling: kristale e pholile ho 0.1-0.5 ° C / min ho fokotsa mocheso o bakoang ke khatello ea kelello.
5. Mefuta e Tšoanang ea Crystal:
Kereiti ea Elektronike: Li-semiconductor substrates (TTV <5 μm)
Kereiti ea Optical: lifensetere tsa laser tsa UV (phetiso> 90%@200 nm)
Mefuta e fapaneng ea Doped: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), tubing ea safire e putsoa

Likarolo tsa Core System

1. Sistimi ea ho qhibiliha
Iridium Crucible : E hanyetsana le 2300 ° C, e thibela ho bola, e lumellana le melt e kholo (100-400 kg).
Sebōpi se futhumatsang sa Induction: Taolo ea mocheso e ikemetseng ea libaka tse ngata (± 0.5 ° C), li-gradients tse ntlafalitsoeng tsa mocheso.

2. Mokhoa oa ho hula le oa ho potoloha
High-Precision Servo Motor: Ho hula qeto ea 0.01 mm/h, concentricity e potolohang <0.01 mm.
Magnetic Fluid Seal: Phetisetso e sa amaneng le batho bakeng sa kholo e tsoelang pele (> lihora tse 72).

3. Thermal Control System
PID Closed-Loop Control: Tokiso ea nako ea 'nete ea matla (50–200 kW) ho tsitsisa lebala la mocheso.
Tšireletso ea Khase e Inert: Motsoako oa Ar/N₂ (99.999% bohloeki) ho thibela oxidation.

4. Automation le Monitoring
CCD Diameter Monitoring: Maikutlo a nako ea 'nete (ho nepahala ± 0.01 mm).
Infrared Thermography: E beha leihlo morphology ea sebopeho sa solid-liquid.

CZ vs. KY Method Papiso

Parameter	Mokhoa oa CZ	Mokhoa oa KY
Max. Boholo ba Crystal	12 inches (300 mm)	400 mm (ingot ea sebopeho sa pere)
Defect Density	<100/cm²	<50/cm²
Sekhahla sa Khōlo	0.5–5 mm/h	0.1–2 mm/h
Tšebeliso ea Matla	50–80 kWh/kg	80–120 kWh/kg
Lisebelisoa	Li-substrates tsa LED, GaN epitaxy	Lifensetere tsa mahlo, li-ingots tse kholo
Litšenyehelo	E itekanetseng (matsete a thepa e phahameng)	E phahameng (mokhoa o rarahaneng)

Lisebelisoa tsa Bohlokoa

1. Indasteri ea semiconductor
GaN Epitaxial Substrates: 2–8-inch wafers (TTV <10 μm) bakeng sa Micro-LED le diode tsa laser.
Li-Wafers tsa SOI: Bokhopo bo holimo <0.2 nm bakeng sa lichifi tse kopantsoeng tsa 3D.

2. Optoelectronics
UV Laser Windows: E mamella matla a matla a 200 W/cm² bakeng sa lithography optics.
Likarolo tsa Infrared: Coefficient ea ho monya <10⁻³ cm⁻¹ bakeng sa setšoantšo sa mocheso.

3. Consumer Electronics
Likoahelo tsa Khamera ea Smartphone: boima ba Mohs 9, 10 × ntlafatso ea khanyetso ea khanyetso.
Lipontšo tsa Smartwatch: Botenya 0.3-0.5 mm, phetisetso> 92%.

4. Tšireletso le Sefofane
Nuclear Reactor Windows: Ho mamella mahlaseli ho fihla ho 10¹⁶ n/cm².
Liipone tsa Laser tse Phahameng ka ho Fetisisa: Phetoho ea mocheso <λ/20@1064 nm.

Litšebeletso tsa XKH

1. Thepa ea Customization
Moralo oa Scalable Chamber: Φ200–400 limilimithara litlhophiso bakeng sa tlhahiso ea li-wafer tsa 2-12-inch.
Doping Flexibility: E ts'ehetsa "rare-earth" (Er/Yb) le transition-metal (Ti/Cr) doping bakeng sa thepa ea optoelectronic e ikhethileng.

2. Tšehetso ea Qetello-pele
Ntlafatso ea Ts'ebetso: Litlolo tse netefalitsoeng esale pele (50+) tsa LED, lisebelisoa tsa RF, le likarolo tse thatafalitsoeng ke radiation.
Global Service Network: Litlhahlobo tse hole tsa 24/7 le tlhokomelo ea setšeng ka waranti ea likhoeli tse 24.

3. Downstream Processing
Thepa ea Wafer: Ho seha, ho sila le ho bentša bakeng sa li-wafers tse 2-12-inch (C/A-plane).
Lihlahisoa tse Ekelitsoeng Boleng:
Lisebelisoa tsa Optical: Lifensetere tsa UV/IR (botenya ba 0.5-50 mm).
Lisebelisoa tsa Mabenyane: Cr³⁺ ruby (GIA-certified), Ti³⁺ star sapphire.

4. Boetapele ba Theknoloji
Setifikeiti: li-wafers tse lumellanang le EMI.
Patents: Litokelo tsa mantlha tsa mekhoa e mecha ea CZ.

Qetello

Lisebelisoa tsa mokhoa oa CZ li fana ka tšebelisano ea boholo bo boholo, litekanyetso tse tlase haholo, le botsitso bo phahameng ba ts'ebetso, e leng se etsang hore e be letšoao la indasteri bakeng sa lisebelisoa tsa LED, semiconductor le ts'ireletso. XKH e fana ka ts'ehetso e felletseng ho tloha phepelong ea lisebelisoa ho isa tšebetsong ea kamora kholo, e nolofalletsang bareki ho fihlela tlhahiso ea kristale ea safire e theko e tlaase, e sebetsang hantle haholo.