Semi-Insulating SiC ho Si Composite Substrates
Lintho | Tlhaloso | Lintho | Tlhaloso |
Diameter | 150±0.2mm | Boitloaelo | <111>/<100>/<110> joalo-joalo |
Polytype | 4H | Mofuta | P/N |
Ho hanyetsa | ≥1E8ohm·cm | Bophatlalatsi | Sephara/Notch |
Fetisetsa lera Botenya | ≥0.1μm | Edge Chip, Scratch, Crack (tlhahlobo ea pono) | Ha ho letho |
Lefeela | ≤5ea/wafer (2mm>D>0.5mm) | TTV | ≤5μm |
Bokhopo bo ka pele | Ra≤0.2nm (5μm*5μm) | Botenya | 500/625/675±25μm |
Motsoako ona o fana ka menyetla e mengata ea ho etsa lisebelisoa tsa elektroniki:
Tšebelisano: Tšebeliso ea silicon substrate e etsa hore e lumellane le mekhoa e tloaelehileng ea ho sebetsa ka silicon 'me e lumella ho kopanngoa le mekhoa e teng ea tlhahiso ea semiconductor.
Ts'ebetso e phahameng ea mocheso: SiC e na le conductivity e ntle ea mocheso 'me e khona ho sebetsa ka mocheso o phahameng, e etsa hore e tšoanelehe bakeng sa matla a phahameng le lisebelisoa tsa elektronike tse phahameng.
High Breakdown Voltage: Lisebelisoa tsa SiC li na le matla a phahameng a ho senya 'me li khona ho mamella masimo a phahameng a motlakase ntle le ho senyeha ha motlakase.
Tahlehelo ea Matla e Fokotseng: Li-substrates tsa SiC li lumella ho fetola matla ka katleho le ho fokotsa matla a ho lahleheloa ke matla ho lisebelisoa tsa elektronike ha li bapisoa le lisebelisoa tse tloaelehileng tsa silicon.
Wide bandwidth: SiC e na le bandwidth e pharaletseng, e lumellang nts'etsopele ea lisebelisoa tsa elektroniki tse ka sebetsang ka mocheso o phahameng le matla a phahameng a matla.
Kahoo SiC e thibelang metsi ho Sic composite substrates e kopanya ho lumellana ha silicon le thepa e phahameng ea motlakase le ea mocheso ea SiC, e etsa hore e tšoanelehe bakeng sa lisebelisoa tsa elektronike tse sebetsang hantle.
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