SiC
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Silicon Carbide SiC Ingot 6inch N mofuta Dummy/prime grade botenya ka ba customized
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SiC Ingot 4H-N mofuta oa Dummy grade 2inch 3inch 4inch 6inch botenya:＞10mm
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HPSI SiC wafer dia:3inch botenya:350um± 25 µm bakeng sa Power Electronics
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Kereiting ea Dummy Kereiti 330μm 430μm Botenya
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2inch silicon carbide substrate 6H-N habeli mahlakoreng a bentšitsoeng bophara ba 50.8mm sehlopha sa lipatlisiso tsa sehlopha sa tlhahiso.
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N-Type SiC Composite Substrates Dia6inch Monocrystaline ea boleng bo holimo le substrate ea boleng bo tlase
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha
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N-Mofuta oa SiC ho Si Composite Substrates Dia6inch