SiC
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12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse bakeng sa mocheso o phahameng oa lisebelisoa tsa mocheso
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8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm tlhahiso ea sehlopha sa lipatlisiso sehlopheng sa moetlo o bentšitsoeng
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HPSI SiC wafer dia:3inch botenya:350um± 25 µm bakeng sa Power Electronics
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade
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P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha
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8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos
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HPSI SiC Wafer ≥90% Transmittance Optical Grade bakeng sa likhalase tsa AI/AR
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Bakeng sa Likhalase tsa Ar
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4H-SiC Epitaxial Wafers bakeng sa Ultra-High Voltage MOSFETs (100–500 μm, 6 inch)
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SICOI (Silicon Carbide ka Insulator) Liphaephe tsa SiC Film KA Silicon
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Silicon Carbide (SiC) E le 'ngoe-Crystal Substrate - 10×10mm Wafer