SiC
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya
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4H-N/6H-N SiC Wafer Reasearch tlhahiso ea Dummy grade Dia150mm Silicon carbide substrate
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12 inch SIC substrate silicon carbide prime grade diameter 300mm boholo bo boholo 4H-N E loketse bakeng sa mocheso o phahameng oa lisebelisoa tsa mocheso
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HPSI SiC wafer dia:3inch botenya:350um± 25 µm bakeng sa Power Electronics
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8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm tlhahiso ea sehlopha sa lipatlisiso sehlopheng sa moetlo o bentšitsoeng
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade
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P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha
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8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos
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SiC ceramic end effector e fanang ka letsoho bakeng sa ho jara liphaphatha
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SiC ceramic plate/tray bakeng sa 4inch 6inch wafer holder bakeng sa ICP
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3 inch High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)