SiC
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Sekoahelo sa SIC sa lisenthimithara tse 12 sa silicon carbide prime grade bophara 300mm boholo bo boholo 4H-N E loketse ho qhala mocheso oa sesebelisoa se nang le matla a mangata
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8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm oa sehlopha sa lipatlisiso sa tlhahiso ea sehlopha sa substrate e bentšitsoeng ka mokhoa o ikhethileng
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HPSI SiC wafer dia: 3inch botenya: 350um ± 25 µm bakeng sa Power Electronics
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3inch Bohloeki bo phahameng ba Semi-Insulation （HPSI）SiC wafer 350um Dummy grade Prime grade
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Sehlahisoa se secha sa P-type SiC substrate SiC wafer Dia2inch
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Li-wafer tsa SiC tsa Silicon Carbide tse 8inch 200mm 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Kereiti ea Mos Kereiti
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Wafer ea 4H-SiC ea lisenthimithara tse 12 bakeng sa likhalase tsa AR
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Sejana sa HPSI SiC ≥90% sa Phetiso ea Optical bakeng sa Likhalase tsa AI/AR
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Bakeng sa Likhalase tsa Ar
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Li-wafer tsa Epitaxial tsa 4H-SiC bakeng sa li-MOSFET tsa Motlakase o Phahameng ka ho Fetisisa (100–500 μm, lisenthimithara tse 6)
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Filimi ea SICOI (Silicon Carbide holim'a Insulator) Li-wafers SiC Filimi holim'a Silicon